TWI612695B - 半導體發光裝置 - Google Patents

半導體發光裝置 Download PDF

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Publication number
TWI612695B
TWI612695B TW105107408A TW105107408A TWI612695B TW I612695 B TWI612695 B TW I612695B TW 105107408 A TW105107408 A TW 105107408A TW 105107408 A TW105107408 A TW 105107408A TW I612695 B TWI612695 B TW I612695B
Authority
TW
Taiwan
Prior art keywords
light
layer
emitting body
substrate
light emitting
Prior art date
Application number
TW105107408A
Other languages
English (en)
Chinese (zh)
Other versions
TW201711232A (zh
Inventor
Koji Kaga
Jumpei Tajima
Toshiyuki Oka
Kazuyuki Miyabe
Original Assignee
Alpad Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alpad Corp filed Critical Alpad Corp
Publication of TW201711232A publication Critical patent/TW201711232A/zh
Application granted granted Critical
Publication of TWI612695B publication Critical patent/TWI612695B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
TW105107408A 2015-09-10 2016-03-10 半導體發光裝置 TWI612695B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015178165A JP6637703B2 (ja) 2015-09-10 2015-09-10 半導体発光装置

Publications (2)

Publication Number Publication Date
TW201711232A TW201711232A (zh) 2017-03-16
TWI612695B true TWI612695B (zh) 2018-01-21

Family

ID=58237214

Family Applications (2)

Application Number Title Priority Date Filing Date
TW105107408A TWI612695B (zh) 2015-09-10 2016-03-10 半導體發光裝置
TW106129390A TWI697140B (zh) 2015-09-10 2016-03-10 半導體發光裝置

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW106129390A TWI697140B (zh) 2015-09-10 2016-03-10 半導體發光裝置

Country Status (4)

Country Link
US (2) US9722162B2 (enExample)
JP (1) JP6637703B2 (enExample)
CN (2) CN108807358B (enExample)
TW (2) TWI612695B (enExample)

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* Cited by examiner, † Cited by third party
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CN105702821B (zh) * 2016-03-29 2018-01-30 苏州晶湛半导体有限公司 半导体发光器件及其制造方法
JP6380512B2 (ja) * 2016-11-16 2018-08-29 富士ゼロックス株式会社 発光素子アレイ、および光伝送装置
TWI646377B (zh) * 2017-11-03 2019-01-01 友達光電股份有限公司 顯示裝置及其製造方法
US10862006B2 (en) * 2018-08-17 2020-12-08 Seoul Viosys Co., Ltd. Light emitting device
CN110473975A (zh) * 2019-07-29 2019-11-19 吉林大学 一种交流驱动的双微腔顶发射白光有机电致发光器件
KR102851496B1 (ko) * 2020-05-13 2025-08-28 삼성디스플레이 주식회사 표시 장치

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TW201115729A (en) * 2009-07-21 2011-05-01 Philips Lumileds Lighting Co Thin-film flip-chip series connected LEDs
US20110291149A1 (en) * 2010-05-26 2011-12-01 Kabushiki Kaisha Toshiba Light emitting device
US20120043563A1 (en) * 2009-04-06 2012-02-23 James Ibbetson High Voltage Low Current Surface Emitting Light Emitting Diode
TW201310703A (zh) * 2011-08-17 2013-03-01 Ritedia Corp 垂直式發光二極體結構及其製備方法

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JP3303154B2 (ja) 1994-09-30 2002-07-15 ローム株式会社 半導体発光素子
EP1700344B1 (en) 2003-12-24 2016-03-02 Panasonic Intellectual Property Management Co., Ltd. Semiconductor light emitting device and lighting module
US20060017060A1 (en) * 2004-07-26 2006-01-26 Nai-Chuan Chen Vertical conducting nitride diode using an electrically conductive substrate with a metal connection
TWI374553B (en) * 2004-12-22 2012-10-11 Panasonic Corp Semiconductor light emitting device, illumination module, illumination apparatus, method for manufacturing semiconductor light emitting device, and method for manufacturing semiconductor light emitting element
KR101047683B1 (ko) * 2005-05-17 2011-07-08 엘지이노텍 주식회사 와이어 본딩이 불필요한 발광소자 패키징 방법
WO2007081092A1 (en) * 2006-01-09 2007-07-19 Seoul Opto Device Co., Ltd. Del à couche d'ito et son procédé de fabrication
JP5123269B2 (ja) * 2008-09-30 2013-01-23 ソウル オプト デバイス カンパニー リミテッド 発光素子及びその製造方法
KR100999689B1 (ko) * 2008-10-17 2010-12-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법, 이를 구비한 발광장치
KR101533817B1 (ko) * 2008-12-31 2015-07-09 서울바이오시스 주식회사 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
KR101557362B1 (ko) * 2008-12-31 2015-10-08 서울바이오시스 주식회사 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
JP2010165983A (ja) * 2009-01-19 2010-07-29 Sharp Corp 発光チップ集積デバイスおよびその製造方法
CN102201426B (zh) * 2010-03-23 2016-05-04 展晶科技(深圳)有限公司 发光二极管及其制作方法
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KR101956101B1 (ko) * 2012-09-06 2019-03-11 엘지이노텍 주식회사 발광소자
WO2014061940A1 (en) * 2012-10-15 2014-04-24 Seoul Viosys Co., Ltd. Semiconductor device and method of fabricating the same
WO2014081243A1 (en) * 2012-11-23 2014-05-30 Seoul Viosys Co., Ltd. Light emitting diode having a plurality of light emitting units
US8963121B2 (en) * 2012-12-07 2015-02-24 Micron Technology, Inc. Vertical solid-state transducers and high voltage solid-state transducers having buried contacts and associated systems and methods
KR102065390B1 (ko) 2013-02-15 2020-01-13 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 라이트 유닛
TWI549322B (zh) * 2013-04-10 2016-09-11 映瑞光電科技（上海）有限公司 一種結合磊晶結構與封裝基板爲一體之整合式ｌｅｄ元件及其製作方法
JP2014170977A (ja) 2014-06-27 2014-09-18 Toshiba Corp 発光装置
TWI552394B (zh) * 2014-11-18 2016-10-01 隆達電子股份有限公司 發光二極體結構與發光二極體模組

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
US20120043563A1 (en) * 2009-04-06 2012-02-23 James Ibbetson High Voltage Low Current Surface Emitting Light Emitting Diode
TW201115729A (en) * 2009-07-21 2011-05-01 Philips Lumileds Lighting Co Thin-film flip-chip series connected LEDs
US20110291149A1 (en) * 2010-05-26 2011-12-01 Kabushiki Kaisha Toshiba Light emitting device
TW201310703A (zh) * 2011-08-17 2013-03-01 Ritedia Corp 垂直式發光二極體結構及其製備方法

Also Published As

Publication number Publication date
TW201711232A (zh) 2017-03-16
TW201743478A (zh) 2017-12-16
CN106531758A (zh) 2017-03-22
US10134806B2 (en) 2018-11-20
TWI697140B (zh) 2020-06-21
JP2017054942A (ja) 2017-03-16
JP6637703B2 (ja) 2020-01-29
US20170301725A1 (en) 2017-10-19
CN106531758B (zh) 2018-09-28
US20170077366A1 (en) 2017-03-16
CN108807358A (zh) 2018-11-13
CN108807358B (zh) 2022-05-03
US9722162B2 (en) 2017-08-01

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