JP6637703B2 - 半導体発光装置 - Google Patents

半導体発光装置 Download PDF

Info

Publication number
JP6637703B2
JP6637703B2 JP2015178165A JP2015178165A JP6637703B2 JP 6637703 B2 JP6637703 B2 JP 6637703B2 JP 2015178165 A JP2015178165 A JP 2015178165A JP 2015178165 A JP2015178165 A JP 2015178165A JP 6637703 B2 JP6637703 B2 JP 6637703B2
Authority
JP
Japan
Prior art keywords
layer
semiconductor layer
light emitting
light
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2015178165A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017054942A5 (enExample
JP2017054942A (ja
Inventor
広持 加賀
広持 加賀
純平 田島
純平 田島
俊行 岡
俊行 岡
宮部　主之
主之 宮部
Original Assignee
アルパッド株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アルパッド株式会社 filed Critical アルパッド株式会社
Priority to JP2015178165A priority Critical patent/JP6637703B2/ja
Priority to US15/056,339 priority patent/US9722162B2/en
Priority to CN201610137827.6A priority patent/CN106531758B/zh
Priority to TW105107408A priority patent/TWI612695B/zh
Priority to CN201810687787.1A priority patent/CN108807358B/zh
Priority to TW106129390A priority patent/TWI697140B/zh
Publication of JP2017054942A publication Critical patent/JP2017054942A/ja
Priority to US15/636,218 priority patent/US10134806B2/en
Publication of JP2017054942A5 publication Critical patent/JP2017054942A5/ja
Application granted granted Critical
Publication of JP6637703B2 publication Critical patent/JP6637703B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
JP2015178165A 2015-09-10 2015-09-10 半導体発光装置 Expired - Fee Related JP6637703B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2015178165A JP6637703B2 (ja) 2015-09-10 2015-09-10 半導体発光装置
US15/056,339 US9722162B2 (en) 2015-09-10 2016-02-29 Semiconductor light emitting device
TW105107408A TWI612695B (zh) 2015-09-10 2016-03-10 半導體發光裝置
CN201810687787.1A CN108807358B (zh) 2015-09-10 2016-03-10 半导体发光装置
CN201610137827.6A CN106531758B (zh) 2015-09-10 2016-03-10 半导体发光装置
TW106129390A TWI697140B (zh) 2015-09-10 2016-03-10 半導體發光裝置
US15/636,218 US10134806B2 (en) 2015-09-10 2017-06-28 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015178165A JP6637703B2 (ja) 2015-09-10 2015-09-10 半導体発光装置

Publications (3)

Publication Number Publication Date
JP2017054942A JP2017054942A (ja) 2017-03-16
JP2017054942A5 JP2017054942A5 (enExample) 2018-10-18
JP6637703B2 true JP6637703B2 (ja) 2020-01-29

Family

ID=58237214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015178165A Expired - Fee Related JP6637703B2 (ja) 2015-09-10 2015-09-10 半導体発光装置

Country Status (4)

Country Link
US (2) US9722162B2 (enExample)
JP (1) JP6637703B2 (enExample)
CN (2) CN108807358B (enExample)
TW (2) TWI612695B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105702821B (zh) * 2016-03-29 2018-01-30 苏州晶湛半导体有限公司 半导体发光器件及其制造方法
JP6380512B2 (ja) * 2016-11-16 2018-08-29 富士ゼロックス株式会社 発光素子アレイ、および光伝送装置
TWI646377B (zh) * 2017-11-03 2019-01-01 友達光電股份有限公司 顯示裝置及其製造方法
US10862006B2 (en) * 2018-08-17 2020-12-08 Seoul Viosys Co., Ltd. Light emitting device
CN110473975A (zh) * 2019-07-29 2019-11-19 吉林大学 一种交流驱动的双微腔顶发射白光有机电致发光器件
KR102851496B1 (ko) * 2020-05-13 2025-08-28 삼성디스플레이 주식회사 표시 장치

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3303154B2 (ja) 1994-09-30 2002-07-15 ローム株式会社 半導体発光素子
EP1700344B1 (en) 2003-12-24 2016-03-02 Panasonic Intellectual Property Management Co., Ltd. Semiconductor light emitting device and lighting module
US20060017060A1 (en) * 2004-07-26 2006-01-26 Nai-Chuan Chen Vertical conducting nitride diode using an electrically conductive substrate with a metal connection
TWI374553B (en) * 2004-12-22 2012-10-11 Panasonic Corp Semiconductor light emitting device, illumination module, illumination apparatus, method for manufacturing semiconductor light emitting device, and method for manufacturing semiconductor light emitting element
KR101047683B1 (ko) * 2005-05-17 2011-07-08 엘지이노텍 주식회사 와이어 본딩이 불필요한 발광소자 패키징 방법
WO2007081092A1 (en) * 2006-01-09 2007-07-19 Seoul Opto Device Co., Ltd. Del à couche d'ito et son procédé de fabrication
JP5123269B2 (ja) * 2008-09-30 2013-01-23 ソウル オプト デバイス カンパニー リミテッド 発光素子及びその製造方法
KR100999689B1 (ko) * 2008-10-17 2010-12-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법, 이를 구비한 발광장치
KR101533817B1 (ko) * 2008-12-31 2015-07-09 서울바이오시스 주식회사 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
KR101557362B1 (ko) * 2008-12-31 2015-10-08 서울바이오시스 주식회사 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
JP2010165983A (ja) * 2009-01-19 2010-07-29 Sharp Corp 発光チップ集積デバイスおよびその製造方法
US9093293B2 (en) * 2009-04-06 2015-07-28 Cree, Inc. High voltage low current surface emitting light emitting diode
US20110018013A1 (en) 2009-07-21 2011-01-27 Koninklijke Philips Electronics N.V. Thin-film flip-chip series connected leds
CN102201426B (zh) * 2010-03-23 2016-05-04 展晶科技(深圳)有限公司 发光二极管及其制作方法
JP2011199221A (ja) * 2010-03-24 2011-10-06 Hitachi Cable Ltd 発光ダイオード
JP5426481B2 (ja) * 2010-05-26 2014-02-26 株式会社東芝 発光装置
DE102010048159B4 (de) * 2010-10-11 2023-10-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtdiodenchip
CN102593113B (zh) * 2011-01-10 2015-04-01 展晶科技(深圳)有限公司 发光二极管封装结构
JP4989773B1 (ja) 2011-05-16 2012-08-01 株式会社東芝 半導体発光素子
TW201310703A (zh) * 2011-08-17 2013-03-01 Ritedia Corp 垂直式發光二極體結構及其製備方法
TW201347233A (zh) * 2012-05-08 2013-11-16 華夏光股份有限公司 發光二極體裝置及其製造方法
DE102012215524A1 (de) * 2012-08-31 2014-03-06 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
KR101956101B1 (ko) * 2012-09-06 2019-03-11 엘지이노텍 주식회사 발광소자
WO2014061940A1 (en) * 2012-10-15 2014-04-24 Seoul Viosys Co., Ltd. Semiconductor device and method of fabricating the same
WO2014081243A1 (en) * 2012-11-23 2014-05-30 Seoul Viosys Co., Ltd. Light emitting diode having a plurality of light emitting units
US8963121B2 (en) * 2012-12-07 2015-02-24 Micron Technology, Inc. Vertical solid-state transducers and high voltage solid-state transducers having buried contacts and associated systems and methods
KR102065390B1 (ko) 2013-02-15 2020-01-13 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 라이트 유닛
TWI549322B (zh) * 2013-04-10 2016-09-11 映瑞光電科技（上海）有限公司 一種結合磊晶結構與封裝基板爲一體之整合式ｌｅｄ元件及其製作方法
JP2014170977A (ja) 2014-06-27 2014-09-18 Toshiba Corp 発光装置
TWI552394B (zh) * 2014-11-18 2016-10-01 隆達電子股份有限公司 發光二極體結構與發光二極體模組

Also Published As

Publication number Publication date
TW201711232A (zh) 2017-03-16
TW201743478A (zh) 2017-12-16
CN106531758A (zh) 2017-03-22
US10134806B2 (en) 2018-11-20
TWI697140B (zh) 2020-06-21
JP2017054942A (ja) 2017-03-16
US20170301725A1 (en) 2017-10-19
TWI612695B (zh) 2018-01-21
CN106531758B (zh) 2018-09-28
US20170077366A1 (en) 2017-03-16
CN108807358A (zh) 2018-11-13
CN108807358B (zh) 2022-05-03
US9722162B2 (en) 2017-08-01

Similar Documents

Publication Publication Date Title
EP1935038B1 (en) Light emitting device having vertically stacked light emitting diodes
US10297719B2 (en) Micro-light emitting diode (micro-LED) device
JP6637703B2 (ja) 半導体発光装置
CN102870216B (zh) 光电子半导体芯片
CN105280772B (zh) 发光二极管及其制造方法
US8450765B2 (en) Light emitting diode chip and method for manufacturing the same
US12176459B2 (en) Light-emitting diode chip and manufacturing method thereof
US9000456B2 (en) Solid state lighting devices with accessible electrodes and methods of manufacturing
US10103305B2 (en) High efficiency light emitting device
CN101807593A (zh) 发光器件
JP7274511B2 (ja) 発光ダイオードデバイス及びその製作方法
KR100716645B1 (ko) 수직으로 적층된 발광 다이오드들을 갖는 발광 소자
JP2017055045A (ja) 半導体発光装置
KR101090178B1 (ko) 반도체 발광소자
JP2017054963A (ja) 半導体発光装置およびその製造方法
JP2017011016A (ja) 半導体発光装置
KR20160093789A (ko) 반도체 발광소자
KR20120069048A (ko) 발광 소자 및 그 제조 방법
KR20110087796A (ko) 반도체 발광소자

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20171130

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180903

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180903

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20190315

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20190507

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190625

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20191129

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20191223

R150 Certificate of patent or registration of utility model

Ref document number: 6637703

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees