JP2017054942A5 - - Google Patents

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Publication number
JP2017054942A5
JP2017054942A5 JP2015178165A JP2015178165A JP2017054942A5 JP 2017054942 A5 JP2017054942 A5 JP 2017054942A5 JP 2015178165 A JP2015178165 A JP 2015178165A JP 2015178165 A JP2015178165 A JP 2015178165A JP 2017054942 A5 JP2017054942 A5 JP 2017054942A5
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JP
Japan
Prior art keywords
light emitter
side electrode
type semiconductor
semiconductor layer
electrically connected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2015178165A
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English (en)
Japanese (ja)
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JP2017054942A (ja
JP6637703B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2015178165A external-priority patent/JP6637703B2/ja
Priority to JP2015178165A priority Critical patent/JP6637703B2/ja
Priority to US15/056,339 priority patent/US9722162B2/en
Priority to CN201610137827.6A priority patent/CN106531758B/zh
Priority to CN201810687787.1A priority patent/CN108807358B/zh
Priority to TW105107408A priority patent/TWI612695B/zh
Priority to TW106129390A priority patent/TWI697140B/zh
Publication of JP2017054942A publication Critical patent/JP2017054942A/ja
Priority to US15/636,218 priority patent/US10134806B2/en
Publication of JP2017054942A5 publication Critical patent/JP2017054942A5/ja
Publication of JP6637703B2 publication Critical patent/JP6637703B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2015178165A 2015-09-10 2015-09-10 半導体発光装置 Expired - Fee Related JP6637703B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2015178165A JP6637703B2 (ja) 2015-09-10 2015-09-10 半導体発光装置
US15/056,339 US9722162B2 (en) 2015-09-10 2016-02-29 Semiconductor light emitting device
TW105107408A TWI612695B (zh) 2015-09-10 2016-03-10 半導體發光裝置
CN201810687787.1A CN108807358B (zh) 2015-09-10 2016-03-10 半导体发光装置
CN201610137827.6A CN106531758B (zh) 2015-09-10 2016-03-10 半导体发光装置
TW106129390A TWI697140B (zh) 2015-09-10 2016-03-10 半導體發光裝置
US15/636,218 US10134806B2 (en) 2015-09-10 2017-06-28 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015178165A JP6637703B2 (ja) 2015-09-10 2015-09-10 半導体発光装置

Publications (3)

Publication Number Publication Date
JP2017054942A JP2017054942A (ja) 2017-03-16
JP2017054942A5 true JP2017054942A5 (enExample) 2018-10-18
JP6637703B2 JP6637703B2 (ja) 2020-01-29

Family

ID=58237214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015178165A Expired - Fee Related JP6637703B2 (ja) 2015-09-10 2015-09-10 半導体発光装置

Country Status (4)

Country Link
US (2) US9722162B2 (enExample)
JP (1) JP6637703B2 (enExample)
CN (2) CN108807358B (enExample)
TW (2) TWI612695B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105702821B (zh) * 2016-03-29 2018-01-30 苏州晶湛半导体有限公司 半导体发光器件及其制造方法
JP6380512B2 (ja) * 2016-11-16 2018-08-29 富士ゼロックス株式会社 発光素子アレイ、および光伝送装置
TWI646377B (zh) * 2017-11-03 2019-01-01 友達光電股份有限公司 顯示裝置及其製造方法
US10862006B2 (en) * 2018-08-17 2020-12-08 Seoul Viosys Co., Ltd. Light emitting device
CN110473975A (zh) * 2019-07-29 2019-11-19 吉林大学 一种交流驱动的双微腔顶发射白光有机电致发光器件
KR102851496B1 (ko) * 2020-05-13 2025-08-28 삼성디스플레이 주식회사 표시 장치

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3303154B2 (ja) 1994-09-30 2002-07-15 ローム株式会社 半導体発光素子
EP1700344B1 (en) 2003-12-24 2016-03-02 Panasonic Intellectual Property Management Co., Ltd. Semiconductor light emitting device and lighting module
US20060017060A1 (en) * 2004-07-26 2006-01-26 Nai-Chuan Chen Vertical conducting nitride diode using an electrically conductive substrate with a metal connection
TWI374553B (en) * 2004-12-22 2012-10-11 Panasonic Corp Semiconductor light emitting device, illumination module, illumination apparatus, method for manufacturing semiconductor light emitting device, and method for manufacturing semiconductor light emitting element
KR101047683B1 (ko) * 2005-05-17 2011-07-08 엘지이노텍 주식회사 와이어 본딩이 불필요한 발광소자 패키징 방법
WO2007081092A1 (en) * 2006-01-09 2007-07-19 Seoul Opto Device Co., Ltd. Del à couche d'ito et son procédé de fabrication
JP5123269B2 (ja) * 2008-09-30 2013-01-23 ソウル オプト デバイス カンパニー リミテッド 発光素子及びその製造方法
KR100999689B1 (ko) * 2008-10-17 2010-12-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법, 이를 구비한 발광장치
KR101533817B1 (ko) * 2008-12-31 2015-07-09 서울바이오시스 주식회사 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
KR101557362B1 (ko) * 2008-12-31 2015-10-08 서울바이오시스 주식회사 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
JP2010165983A (ja) * 2009-01-19 2010-07-29 Sharp Corp 発光チップ集積デバイスおよびその製造方法
US9093293B2 (en) * 2009-04-06 2015-07-28 Cree, Inc. High voltage low current surface emitting light emitting diode
US20110018013A1 (en) 2009-07-21 2011-01-27 Koninklijke Philips Electronics N.V. Thin-film flip-chip series connected leds
CN102201426B (zh) * 2010-03-23 2016-05-04 展晶科技(深圳)有限公司 发光二极管及其制作方法
JP2011199221A (ja) * 2010-03-24 2011-10-06 Hitachi Cable Ltd 発光ダイオード
JP5426481B2 (ja) * 2010-05-26 2014-02-26 株式会社東芝 発光装置
DE102010048159B4 (de) * 2010-10-11 2023-10-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtdiodenchip
CN102593113B (zh) * 2011-01-10 2015-04-01 展晶科技(深圳)有限公司 发光二极管封装结构
JP4989773B1 (ja) 2011-05-16 2012-08-01 株式会社東芝 半導体発光素子
TW201310703A (zh) * 2011-08-17 2013-03-01 Ritedia Corp 垂直式發光二極體結構及其製備方法
TW201347233A (zh) * 2012-05-08 2013-11-16 華夏光股份有限公司 發光二極體裝置及其製造方法
DE102012215524A1 (de) * 2012-08-31 2014-03-06 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
KR101956101B1 (ko) * 2012-09-06 2019-03-11 엘지이노텍 주식회사 발광소자
WO2014061940A1 (en) * 2012-10-15 2014-04-24 Seoul Viosys Co., Ltd. Semiconductor device and method of fabricating the same
WO2014081243A1 (en) * 2012-11-23 2014-05-30 Seoul Viosys Co., Ltd. Light emitting diode having a plurality of light emitting units
US8963121B2 (en) * 2012-12-07 2015-02-24 Micron Technology, Inc. Vertical solid-state transducers and high voltage solid-state transducers having buried contacts and associated systems and methods
KR102065390B1 (ko) 2013-02-15 2020-01-13 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 라이트 유닛
TWI549322B (zh) * 2013-04-10 2016-09-11 映瑞光電科技（上海）有限公司 一種結合磊晶結構與封裝基板爲一體之整合式ｌｅｄ元件及其製作方法
JP2014170977A (ja) 2014-06-27 2014-09-18 Toshiba Corp 発光装置
TWI552394B (zh) * 2014-11-18 2016-10-01 隆達電子股份有限公司 發光二極體結構與發光二極體模組

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