KR20180084652A - 수직형 발광 다이오드 - Google Patents

수직형 발광 다이오드 Download PDF

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Publication number
KR20180084652A
KR20180084652A KR1020180004980A KR20180004980A KR20180084652A KR 20180084652 A KR20180084652 A KR 20180084652A KR 1020180004980 A KR1020180004980 A KR 1020180004980A KR 20180004980 A KR20180004980 A KR 20180004980A KR 20180084652 A KR20180084652 A KR 20180084652A
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South Korea
Prior art keywords
semiconductor layer
conductive semiconductor
light emitting
emitting diode
mesa
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KR1020180004980A
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English (en)
Inventor
이미희
김창연
박주용
유종균
이준희
Original Assignee
서울바이오시스 주식회사
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Priority to US15/872,900 priority Critical patent/US10290769B2/en
Publication of KR20180084652A publication Critical patent/KR20180084652A/ko
Priority to US16/409,603 priority patent/US10749074B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

그루브를 구비하는 메사를 가지는 수직형 발광 다이오드가 제공된다. 일 실시예에 따른 발광 다이오드는, 지지기판; 지지기판 상부에 배치된 제1 도전형 반도체층; 활성층 및 제2 도전형 반도체층을 포함하고, 제1 도전형 반도체층의 가장자리를 노출시키도록 제1 도전형 반도체층의 일부 영역 하부에 위치하며, 제2 도전형 반도체층 및 활성층을 통해 제1 도전형 반도체층을 노출시키는 그루브를 포함하는 메사; 제2 도전형 반도체층과 지지기판 사이에 배치되되, 메사 주위에서 제1 도전형 반도체층에 전기적으로 접속된 제1 콘택부 및 그루브를 통해 제1 도전형 반도체층에 전기적으로 접속된 제2 콘택부를 포함하는 제1 전극; 제1 전극과 제2 도전형 반도체층 사이에 배치되어 제2 도전형 반도체층에 전기적으로 접속된 제2 전극; 및 제1 도전형 반도체층에 인접하여 제2 전극에 접속하는 상부 전극 패드를 포함하고, 그루브는 메사의 중심을 포함하는 영역을 둘러싸되 일부가 오픈된 형상을 갖는다.
KR1020180004980A 2017-01-16 2018-01-15 수직형 발광 다이오드 KR20180084652A (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US15/872,900 US10290769B2 (en) 2017-01-16 2018-01-16 Vertical type light emitting diode having groove disposed under the first conductivity type semiconductor layer
US16/409,603 US10749074B2 (en) 2017-01-16 2019-05-10 Vertical type light emitting diode having groove disposed under the first conductivity type semiconductor layer

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20170007138 2017-01-16
KR1020170007138 2017-01-16
KR1020170144872 2017-11-01
KR20170144872 2017-11-01

Publications (1)

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KR20180084652A true KR20180084652A (ko) 2018-07-25

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US (2) US10290769B2 (ko)
KR (1) KR20180084652A (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020040449A1 (ko) * 2018-08-21 2020-02-27 엘지이노텍 주식회사 반도체 소자
JP2020141037A (ja) * 2019-02-28 2020-09-03 日亜化学工業株式会社 半導体素子の製造方法
WO2020241993A1 (ko) * 2019-05-30 2020-12-03 서울바이오시스주식회사 수직형 발광 다이오드

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11522107B2 (en) * 2015-03-05 2022-12-06 Xiamen Sanan Optoelectronics Technology Co., Ltd. Light emitting diode and fabrication method thereof
US11799058B2 (en) 2018-03-15 2023-10-24 Osram Oled Gmbh Optoelectronic semiconductor chip
DE102018107673A1 (de) * 2018-03-15 2019-09-19 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Herstellungsverfahren für einen optoelektronischen Halbleiterchip
US11362073B2 (en) * 2019-02-08 2022-06-14 Seoul Viosys Co., Ltd. Light emitting device including multiple transparent electrodes for display and display apparatus having the same
KR20210148548A (ko) * 2020-05-29 2021-12-08 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
KR20220036176A (ko) * 2020-09-15 2022-03-22 삼성전자주식회사 반도체 발광소자 및 이를 구비한 발광소자 패키지
WO2023123469A1 (zh) * 2021-12-31 2023-07-06 厦门三安光电有限公司 一种发光二极管及其发光装置
TWI830216B (zh) * 2022-04-29 2024-01-21 晶元光電股份有限公司 半導體發光元件

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5023229B1 (ja) * 2011-04-27 2012-09-12 株式会社東芝 半導体発光素子の製造方法
KR102385571B1 (ko) * 2017-03-31 2022-04-12 삼성전자주식회사 반도체 발광 소자

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020040449A1 (ko) * 2018-08-21 2020-02-27 엘지이노텍 주식회사 반도체 소자
US11990567B2 (en) 2018-08-21 2024-05-21 Suzhou Lekin Semiconductor Co., Ltd. Semiconductor device
JP2020141037A (ja) * 2019-02-28 2020-09-03 日亜化学工業株式会社 半導体素子の製造方法
WO2020241993A1 (ko) * 2019-05-30 2020-12-03 서울바이오시스주식회사 수직형 발광 다이오드

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US10749074B2 (en) 2020-08-18
US20190273181A1 (en) 2019-09-05
US10290769B2 (en) 2019-05-14
US20190044027A1 (en) 2019-02-07

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