JP2019201198A - 発光チップ及び関連するパッケージ構造 - Google Patents
発光チップ及び関連するパッケージ構造 Download PDFInfo
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- 238000004806 packaging method and process Methods 0.000 title abstract description 3
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 239000000853 adhesive Substances 0.000 claims description 18
- 230000001070 adhesive effect Effects 0.000 claims description 18
- 239000012811 non-conductive material Substances 0.000 claims description 9
- 229920001296 polysiloxane Polymers 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 230000005612 types of electricity Effects 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 abstract description 41
- 239000010980 sapphire Substances 0.000 abstract description 41
- 238000000034 method Methods 0.000 description 44
- 238000005530 etching Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 10
- 229910010271 silicon carbide Inorganic materials 0.000 description 9
- 238000012858 packaging process Methods 0.000 description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000010329 laser etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- -1 gallium nitride compound Chemical class 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
Description
ジングプロセスに従ってパッケージすることができる。例えば、そのパッケージ構造は、表面実装型デバイス(SMD)パッケージ構造又は高電力パッケージ構造である。
型電極254及び第1の導電要素284は、ワイヤボンディングプロセスに従って、第1のワイヤ285を通して互いに接続され、P型電極252及び第2の導電要素282は、ワイヤボンディングプロセスに従って、第2のワイヤ286を通して互いに接続される。その後、発光チップ200は、非導電性材料290(例えば、樹脂又はシリコーン)によって封入され、第1の導電要素284及び第2の導電要素282のみが外部に露出する。それにより、パッケージ構造が形成される。
2の型の電極と電気的に接続される。第1の発光チップを封入するために非導電性材料が使用される。
ロセスに従って形成される。発光チップ400、パッケージ構造及び製造方法が、以下に更に詳細に説明される。
のN型電極454を備える場合、発光チップ400は、その周囲を照明することができる。図3Aの発光チップ400において、N型電極454はN型層420の第2の部分420bの側壁及び上面、並びにサファイア基板410の側壁と接触する。N型電極454がN型層420の第2の部分420bの側壁及びサファイア基板410の側壁と接触する限り、N型電極の構造は変更することができる。
はレーザーエッチングプロセス、ドライエッチングプロセス又はウエットエッチングプロセスである。例えば、レーザーエッチングプロセスが採用される場合、レーザービームのエネルギーが制御される。結果として、サファイア基板410は完全に切断されるのではなく、トレンチ構造460が形成される。
Claims (14)
- 基板と、
第1の部分及び第2の部分を備える第1の型の層であって、該第1の型の層の該第2の部分は前記基板の上方に位置し、該第1の型の層の該第1の部分は該第1の型の層の該第2の部分の上方に位置する、第1の型の層と、
前記第1の型の層の前記第1の部分の上方に位置する活性層と、
前記活性層の上方に位置する第2の型の層と、
前記第1の型の層の前記第2の部分の側壁と接触し、前記基板の側壁と接触する第1の型の電極と、
前記第2の型の層の上方に位置する第2の型の電極と、
を備え、
前記第2の型の層、前記活性層、及び前記第1の型の層の前記第1の部分を合わせて、メサ構造が形成される、発光チップ。 - 前記発光チップはバッファー層を更に備え、該バッファー層は前記基板の上方に位置し、前記第1の型の層の下方に位置する、請求項1に記載の発光チップ。
- 前記活性層は、二重ヘテロ構造又は量子井戸構造を有する、請求項1に記載の発光チップ。
- 前記第1の型の層はN型層であり、前記第2の型の層はP型層であり、前記第1の型の電極はN型電極であり、前記第2の型の電極はP型電極である、請求項1に記載の発光チップ。
- 前記第1の型の層の前記第1の部分は第1の断面積を有し、前記第1の型の層の前記第2の部分は第2の断面積を有し、該第2の断面積は該第1の断面積より大きい、請求項1に記載の発光チップ。
- 前記発光チップは反射層を更に備え、該反射層は前記基板の背面上に形成される、請求項1に記載の発光チップ。
- 基板と、第1の部分及び第2の部分を備える第1の型の層と、活性層と、第2の型の層と、第1の型の電極と、第2の型の電極とを備える第1の発光チップであって、該第1の型の層の該第2の部分は該基板の上方に位置し、該第1の型の層の該第1の部分は該第1の型の層の該第2の部分の上方に位置し、該活性層は該第1の型の層の該第1の部分の上方に位置し、該第2の型の層は該活性層の上方に位置し、該第1の型の電極は該第1の型の層の該第2の部分の側壁と接触し、該基板の側壁と接触し、該第2の型の電極は該第2の型の層の上方に位置し、該第2の型の層、該活性層及び該第1の型の層の該第1の部分を合わせて、メサ構造が形成される、第1の発光チップと、
プラットフォームを備える第1の導電要素であって、前記基板の底面が導電性接着剤を通して該プラットフォーム上に接着され、該導電性接着剤は前記第1の型の電極と接触し、それにより、該第1の導電要素及び前記第1の型の電極が互いに電気的に接続される、第1の導電要素と、
第1のワイヤを通して前記第2の型の電極と電気的に接続される第2の導電要素と、
前記第1の発光チップを封入するための非導電性材料と、
を備える、パッケージ構造。 - 基板と、第1の部分及び第2の部分を備える第1の型の層と、活性層と、第2の型の層と、第1の型の電極と、第2の型の電極とを備える第2の発光チップであって、該第1の
型の層の該第2の部分は該基板の上方に位置し、該第1の型の層の該第1の部分は該第1の型の層の該第2の部分の上方に位置し、該活性層は該第1の型の層の該第1の部分の上方に位置し、該第2の型の層は該活性層の上方に位置し、該第1の型の電極は該第1の型の層の該第2の部分の側壁と接触し、該基板の側壁と接触し、該第2の型の電極は該第2の型の層の上方に位置し、該第2の発光チップの該基板の底面が前記導電性接着剤を通して前記第1の導電要素の前記プラットフォーム上に接着され、前記導電性接着剤は該第2の発光チップの該第1の型の電極と接触し、それにより、前記第1の導電要素及び該第2の発光チップの該第1の型の電極が互いに電気的に接続される、第2の発光チップと、
第2のワイヤを通して、前記第2の発光チップの前記第2の型の電極と電気的に接続される第3の導電要素と、
を更に備える、請求項7に記載のパッケージ構造。 - 前記第1の発光チップはバッファー層を更に備え、該バッファー層は前記基板の上方に位置し、前記第1の型の層の下方に位置する、請求項7に記載のパッケージ構造。
- 前記活性層は二重ヘテロ構造又は量子井戸構造を有する、請求項7に記載のパッケージ構造。
- 前記第1の型の層はN型層であり、前記第2の型の層はP型層であり、前記第1の型の電極はN型電極であり、前記第2の型の電極はP型電極である、請求項7に記載のパッケージ構造。
- 前記導電性接着剤は銀ペースト又はアルミニウムペーストであり、前記非導電性材料は樹脂又はシリコーンである、請求項7に記載のパッケージ構造。
- 前記第1の型の層の前記第1の部分は第1の断面積を有し、前記第1の型の層の前記第2の部分は第2の断面積を有し、該第2の断面積は該第1の断面積より大きい、請求項7に記載のパッケージ構造。
- 前記第1の発光チップは反射層を更に備え、該反射層は前記基板の背面上に形成される、請求項7に記載のパッケージ構造。
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TW107117042A TWI661584B (zh) | 2018-05-18 | 2018-05-18 | 發光晶粒、封裝結構及其相關製造方法 |
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DE102018123930A1 (de) * | 2018-09-27 | 2020-04-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip mit erstem und zweitem Kontaktelement und Verfahren zur Herstellung des optoelektronischen Halbleiterchips |
US11626550B2 (en) | 2020-01-25 | 2023-04-11 | Jade Bird Display (shanghai) Limited | Micro light emitting diode with high light extraction efficiency |
CN111725251B (zh) * | 2020-07-04 | 2023-04-21 | 深圳市惠合显示有限公司 | 高分辨率全彩化MicroLED显示器 |
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JP2001085750A (ja) * | 1999-09-16 | 2001-03-30 | Nichia Chem Ind Ltd | 窒化物半導体発光チップ |
JP2001217456A (ja) * | 2000-02-03 | 2001-08-10 | Sharp Corp | 窒化ガリウム系化合物半導体発光素子 |
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JP5961359B2 (ja) * | 2011-09-20 | 2016-08-02 | 昭和電工株式会社 | 発光ダイオード及びその製造方法 |
CN103367591B (zh) * | 2012-04-09 | 2016-02-10 | 展晶科技(深圳)有限公司 | 发光二极管芯片 |
CN203038965U (zh) * | 2012-07-02 | 2013-07-03 | 刘艳 | 发光元件 |
JP6545981B2 (ja) * | 2015-03-12 | 2019-07-17 | アルパッド株式会社 | 半導体発光装置 |
CN106299072A (zh) * | 2016-09-30 | 2017-01-04 | 映瑞光电科技(上海)有限公司 | 发光二极管芯片 |
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- 2018-11-22 CN CN201811396713.9A patent/CN110504344A/zh active Pending
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JPH0927639A (ja) * | 1995-07-12 | 1997-01-28 | Toshiba Corp | 半導体装置 |
JP2000077726A (ja) * | 1998-08-27 | 2000-03-14 | Seiwa Electric Mfg Co Ltd | 半導体素子とその製造方法 |
JP2001085750A (ja) * | 1999-09-16 | 2001-03-30 | Nichia Chem Ind Ltd | 窒化物半導体発光チップ |
JP2001217456A (ja) * | 2000-02-03 | 2001-08-10 | Sharp Corp | 窒化ガリウム系化合物半導体発光素子 |
JP2002094117A (ja) * | 2000-09-06 | 2002-03-29 | Renyu Kagi Kofun Yugenkoshi | 発光ダイオード素子及びその製造方法 |
JP2002094116A (ja) * | 2000-09-06 | 2002-03-29 | Renyu Kagi Kofun Yugenkoshi | 化合物半導体発光素子及びその製造方法 |
JP2002368275A (ja) * | 2001-06-11 | 2002-12-20 | Toyoda Gosei Co Ltd | 半導体素子及びその製造方法 |
JP2003023180A (ja) * | 2001-07-05 | 2003-01-24 | Seiwa Electric Mfg Co Ltd | 化合物半導体発光素子及びその製造方法 |
WO2004013916A1 (ja) * | 2002-08-01 | 2004-02-12 | Nichia Corporation | 半導体発光素子及びその製造方法並びにそれを用いた発光装置 |
JP2011510493A (ja) * | 2008-01-19 | 2011-03-31 | 鶴山麗得電子實業有限公司 | Led、ledを有するパッケージ構造体、およびledを製作する方法 |
US20100210046A1 (en) * | 2009-02-19 | 2010-08-19 | Chih-Chiang Kao | Light emitting diode chip, and methods for manufacturing and packaging the same |
CN104269473A (zh) * | 2014-10-28 | 2015-01-07 | 聚灿光电科技(苏州)有限公司 | 一种单电极led芯片的制作方法及芯片结构 |
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TW202005122A (zh) | 2020-01-16 |
TWI661584B (zh) | 2019-06-01 |
US20190355888A1 (en) | 2019-11-21 |
CN110504344A (zh) | 2019-11-26 |
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