CN108807358B - 半导体发光装置 - Google Patents

半导体发光装置 Download PDF

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Publication number
CN108807358B
CN108807358B CN201810687787.1A CN201810687787A CN108807358B CN 108807358 B CN108807358 B CN 108807358B CN 201810687787 A CN201810687787 A CN 201810687787A CN 108807358 B CN108807358 B CN 108807358B
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CN
China
Prior art keywords
light
layer
emitting
substrate
emitting body
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Expired - Fee Related
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CN201810687787.1A
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English (en)
Chinese (zh)
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CN108807358A (zh
Inventor
加贺广持
田岛纯平
岡俊行
宫部主之
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Toshiba Corp
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Toshiba Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
CN201810687787.1A 2015-09-10 2016-03-10 半导体发光装置 Expired - Fee Related CN108807358B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015178165A JP6637703B2 (ja) 2015-09-10 2015-09-10 半導体発光装置
JP2015-178165 2015-09-10
CN201610137827.6A CN106531758B (zh) 2015-09-10 2016-03-10 半导体发光装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201610137827.6A Division CN106531758B (zh) 2015-09-10 2016-03-10 半导体发光装置

Publications (2)

Publication Number Publication Date
CN108807358A CN108807358A (zh) 2018-11-13
CN108807358B true CN108807358B (zh) 2022-05-03

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CN201810687787.1A Expired - Fee Related CN108807358B (zh) 2015-09-10 2016-03-10 半导体发光装置
CN201610137827.6A Expired - Fee Related CN106531758B (zh) 2015-09-10 2016-03-10 半导体发光装置

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CN201610137827.6A Expired - Fee Related CN106531758B (zh) 2015-09-10 2016-03-10 半导体发光装置

Country Status (4)

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US (2) US9722162B2 (enExample)
JP (1) JP6637703B2 (enExample)
CN (2) CN108807358B (enExample)
TW (2) TWI612695B (enExample)

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CN105702821B (zh) * 2016-03-29 2018-01-30 苏州晶湛半导体有限公司 半导体发光器件及其制造方法
JP6380512B2 (ja) * 2016-11-16 2018-08-29 富士ゼロックス株式会社 発光素子アレイ、および光伝送装置
TWI646377B (zh) * 2017-11-03 2019-01-01 友達光電股份有限公司 顯示裝置及其製造方法
US10862006B2 (en) * 2018-08-17 2020-12-08 Seoul Viosys Co., Ltd. Light emitting device
CN110473975A (zh) * 2019-07-29 2019-11-19 吉林大学 一种交流驱动的双微腔顶发射白光有机电致发光器件
KR102851496B1 (ko) * 2020-05-13 2025-08-28 삼성디스플레이 주식회사 표시 장치

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CN103682070A (zh) * 2012-09-06 2014-03-26 Lg伊诺特有限公司 发光器件

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EP1700344B1 (en) 2003-12-24 2016-03-02 Panasonic Intellectual Property Management Co., Ltd. Semiconductor light emitting device and lighting module
US20060017060A1 (en) * 2004-07-26 2006-01-26 Nai-Chuan Chen Vertical conducting nitride diode using an electrically conductive substrate with a metal connection
TWI374553B (en) * 2004-12-22 2012-10-11 Panasonic Corp Semiconductor light emitting device, illumination module, illumination apparatus, method for manufacturing semiconductor light emitting device, and method for manufacturing semiconductor light emitting element
KR101047683B1 (ko) * 2005-05-17 2011-07-08 엘지이노텍 주식회사 와이어 본딩이 불필요한 발광소자 패키징 방법
WO2007081092A1 (en) * 2006-01-09 2007-07-19 Seoul Opto Device Co., Ltd. Del à couche d'ito et son procédé de fabrication
JP5123269B2 (ja) * 2008-09-30 2013-01-23 ソウル オプト デバイス カンパニー リミテッド 発光素子及びその製造方法
KR101533817B1 (ko) * 2008-12-31 2015-07-09 서울바이오시스 주식회사 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
KR101557362B1 (ko) * 2008-12-31 2015-10-08 서울바이오시스 주식회사 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
JP2010165983A (ja) * 2009-01-19 2010-07-29 Sharp Corp 発光チップ集積デバイスおよびその製造方法
US9093293B2 (en) * 2009-04-06 2015-07-28 Cree, Inc. High voltage low current surface emitting light emitting diode
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WO2014061940A1 (en) * 2012-10-15 2014-04-24 Seoul Viosys Co., Ltd. Semiconductor device and method of fabricating the same
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TWI549322B (zh) * 2013-04-10 2016-09-11 映瑞光電科技（上海）有限公司 一種結合磊晶結構與封裝基板爲一體之整合式ｌｅｄ元件及其製作方法
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Also Published As

Publication number Publication date
TW201711232A (zh) 2017-03-16
TW201743478A (zh) 2017-12-16
CN106531758A (zh) 2017-03-22
US10134806B2 (en) 2018-11-20
TWI697140B (zh) 2020-06-21
JP2017054942A (ja) 2017-03-16
JP6637703B2 (ja) 2020-01-29
US20170301725A1 (en) 2017-10-19
TWI612695B (zh) 2018-01-21
CN106531758B (zh) 2018-09-28
US20170077366A1 (en) 2017-03-16
CN108807358A (zh) 2018-11-13
US9722162B2 (en) 2017-08-01

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