TWI611437B - 無基板個別耦合電感器結構、電感器結構設備及用於提供電感器結構之方法 - Google Patents

無基板個別耦合電感器結構、電感器結構設備及用於提供電感器結構之方法 Download PDF

Info

Publication number
TWI611437B
TWI611437B TW105110591A TW105110591A TWI611437B TW I611437 B TWI611437 B TW I611437B TW 105110591 A TW105110591 A TW 105110591A TW 105110591 A TW105110591 A TW 105110591A TW I611437 B TWI611437 B TW I611437B
Authority
TW
Taiwan
Prior art keywords
inductor
inductor winding
winding
filler
substrate
Prior art date
Application number
TW105110591A
Other languages
English (en)
Chinese (zh)
Other versions
TW201640535A (zh
Inventor
多伊爾詹姆斯湯瑪士
James Thomas Doyle
瑪姆狄法爾席德
Farsheed MAHMOUDI
亞朗尼亞米拉里夏昂
Amirali Shayan ARANI
Original Assignee
高通公司
Qualcomm Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 高通公司, Qualcomm Incorporated filed Critical 高通公司
Publication of TW201640535A publication Critical patent/TW201640535A/zh
Application granted granted Critical
Publication of TWI611437B publication Critical patent/TWI611437B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/645—Inductive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H01L2225/06562—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking at least one device in the stack being rotated or offset
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
    • H01L2225/1017—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support
    • H01L2225/1023—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
    • H01L2225/1047—Details of electrical connections between containers
    • H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15313—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a land array, e.g. LGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/1533—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate
    • H01L2924/15331—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19106—Disposition of discrete passive components in a mirrored arrangement on two different side of a common die mounting substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Manufacturing & Machinery (AREA)
  • Manufacturing Cores, Coils, And Magnets (AREA)
TW105110591A 2013-02-08 2014-02-05 無基板個別耦合電感器結構、電感器結構設備及用於提供電感器結構之方法 TWI611437B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201361762555P 2013-02-08 2013-02-08
US61/762,555 2013-02-08
US13/791,388 US10115661B2 (en) 2013-02-08 2013-03-08 Substrate-less discrete coupled inductor structure
US13/791,388 2013-03-08

Publications (2)

Publication Number Publication Date
TW201640535A TW201640535A (zh) 2016-11-16
TWI611437B true TWI611437B (zh) 2018-01-11

Family

ID=51297097

Family Applications (2)

Application Number Title Priority Date Filing Date
TW105110591A TWI611437B (zh) 2013-02-08 2014-02-05 無基板個別耦合電感器結構、電感器結構設備及用於提供電感器結構之方法
TW103103804A TWI600037B (zh) 2013-02-08 2014-02-05 無基板個別耦合電感器結構、電感器結構設備及用於提供電感器結構之方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW103103804A TWI600037B (zh) 2013-02-08 2014-02-05 無基板個別耦合電感器結構、電感器結構設備及用於提供電感器結構之方法

Country Status (7)

Country Link
US (1) US10115661B2 (enExample)
EP (1) EP2954543B1 (enExample)
JP (1) JP2016513364A (enExample)
KR (1) KR20150115867A (enExample)
CN (1) CN104969312B (enExample)
TW (2) TWI611437B (enExample)
WO (1) WO2014123790A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9343442B2 (en) 2012-09-20 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Passive devices in package-on-package structures and methods for forming the same
US9704739B2 (en) * 2014-07-30 2017-07-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device packages, packaging methods, and packaged semiconductor devices
US10573448B2 (en) 2014-12-11 2020-02-25 St. Jude Medical International Holding S.À R.L. Multi-layer sensor core
CN105489597B (zh) 2015-12-28 2018-06-15 华为技术有限公司 系统级封装模块组件、系统级封装模块及电子设备
US9761522B2 (en) * 2016-01-29 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Wireless charging package with chip integrated in coil center
EP3449502B1 (en) 2016-04-26 2021-06-30 Linear Technology LLC Mechanically-compliant and electrically and thermally conductive leadframes for component-on-package circuits
US11369431B2 (en) * 2016-06-11 2022-06-28 Boston Scientific Scimed Inc. Inductive double flat coil displacement sensor
TWI645428B (zh) * 2016-11-25 2018-12-21 瑞昱半導體股份有限公司 積體電感
US10872843B2 (en) 2017-05-02 2020-12-22 Micron Technology, Inc. Semiconductor devices with back-side coils for wireless signal and power coupling
US10134671B1 (en) 2017-05-02 2018-11-20 Micron Technology, Inc. 3D interconnect multi-die inductors with through-substrate via cores
US20180323369A1 (en) 2017-05-02 2018-11-08 Micron Technology, Inc. Inductors with through-substrate via cores
US10121739B1 (en) 2017-05-02 2018-11-06 Micron Technology, Inc. Multi-die inductors with coupled through-substrate via cores
US20180323253A1 (en) * 2017-05-02 2018-11-08 Micron Technology, Inc. Semiconductor devices with through-substrate coils for wireless signal and power coupling
US10497635B2 (en) 2018-03-27 2019-12-03 Linear Technology Holding Llc Stacked circuit package with molded base having laser drilled openings for upper package
US11410977B2 (en) 2018-11-13 2022-08-09 Analog Devices International Unlimited Company Electronic module for high power applications
WO2021071900A1 (en) * 2019-10-08 2021-04-15 Murata Manufacturing Co., Ltd. Integrated transformer module
US11844178B2 (en) 2020-06-02 2023-12-12 Analog Devices International Unlimited Company Electronic component
KR20230054566A (ko) 2021-10-15 2023-04-25 삼성전자주식회사 재배선 기판 및 이를 포함하는 반도체 패키지
CN116013662B (zh) * 2022-12-30 2025-11-07 东莞顺络电子有限公司 一种高耦合系数电感

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003059744A (ja) * 2001-08-15 2003-02-28 Sony Corp インダクタの製造方法
TW200635456A (en) * 2005-03-30 2006-10-01 Advanced Semiconductor Eng Method of fabricating a device-containing substrate
TW200711072A (en) * 2005-04-29 2007-03-16 Stats Chippac Ltd Semiconductor package including second substrate and having exposed substrate surfaces on upper and lower sides
TW201222782A (en) * 2010-06-30 2012-06-01 Nat Semiconductor Corp Galvanic isolation transformer

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60147192A (ja) * 1984-01-11 1985-08-03 株式会社日立製作所 プリント配線板の製造方法
JPS6442110A (en) * 1987-08-10 1989-02-14 Hitachi Ltd Formation of conductor pattern
JPH0442110A (ja) * 1990-06-08 1992-02-12 Olympus Optical Co Ltd 不均質媒質を用いたレンズ
JPH09153406A (ja) * 1995-09-28 1997-06-10 Toshiba Corp 平面コイルおよびそれを用いた平面磁気素子およびそれらの製造方法
JP2001244123A (ja) 2000-02-28 2001-09-07 Kawatetsu Mining Co Ltd 表面実装型平面磁気素子及びその製造方法
JP2002110423A (ja) * 2000-09-28 2002-04-12 Kyocera Corp コモンモードチョークコイル
JP2002280878A (ja) 2001-03-19 2002-09-27 Alps Electric Co Ltd 電子回路ユニット
JP2004039867A (ja) 2002-07-03 2004-02-05 Sony Corp 多層配線回路モジュール及びその製造方法
JP5272114B2 (ja) 2002-12-09 2013-08-28 フンダサオ・デ・アムパロ・ア・ペスキーサ・ド・エスタド・デ・サン・パウロ−エフイ・ア・ペー・エ・エシ・ペー Ｅｏｐａ酵素の阻害方法
GB0321658D0 (en) 2003-09-16 2003-10-15 South Bank Univ Entpr Ltd Bifilar transformer
US9029196B2 (en) * 2003-11-10 2015-05-12 Stats Chippac, Ltd. Semiconductor device and method of self-confinement of conductive bump material during reflow without solder mask
JP4012526B2 (ja) 2004-07-01 2007-11-21 Ｔｄｋ株式会社 薄膜コイルおよびその製造方法、ならびにコイル構造体およびその製造方法
US7432794B2 (en) 2004-08-16 2008-10-07 Telefonaktiebolaget L M Ericsson (Publ) Variable integrated inductor
US8368501B2 (en) 2006-06-29 2013-02-05 Intel Corporation Integrated inductors
US8212155B1 (en) 2007-06-26 2012-07-03 Wright Peter V Integrated passive device
US7841070B2 (en) * 2007-08-21 2010-11-30 Intel Corporation Method of fabricating a transformer device
US8149080B2 (en) * 2007-09-25 2012-04-03 Infineon Technologies Ag Integrated circuit including inductive device and ferromagnetic material
US7759212B2 (en) 2007-12-26 2010-07-20 Stats Chippac, Ltd. System-in-package having integrated passive devices and method therefor
US7956603B2 (en) 2008-06-16 2011-06-07 Medility Llc Sensor inductors, sensors for monitoring movements and positioning, apparatus, systems and methods therefore
US8237269B2 (en) * 2008-08-01 2012-08-07 Qualcomm Incorporated High Q transformer disposed at least partly in a non-semiconductor substrate
EP2151834A3 (en) 2008-08-05 2012-09-19 Nxp B.V. Inductor assembly
US7843047B2 (en) * 2008-11-21 2010-11-30 Stats Chippac Ltd. Encapsulant interposer system with integrated passive devices and manufacturing method therefor
JP5705857B2 (ja) * 2009-09-16 2015-04-22 マラディン テクノロジーズ リミテッドＭａｒａｄｉｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｌｔｄ． 微小コイル装置およびその製作方法
US9287344B2 (en) * 2010-08-23 2016-03-15 The Hong Kong University Of Science And Technology Monolithic magnetic induction device
JP5839535B2 (ja) 2010-10-20 2016-01-06 旭化成エレクトロニクス株式会社 平面コイル及びアクチュエータ
JP5649490B2 (ja) 2011-03-16 2015-01-07 新光電気工業株式会社 配線基板及びその製造方法
US8519506B2 (en) * 2011-06-28 2013-08-27 National Semiconductor Corporation Thermally conductive substrate for galvanic isolation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003059744A (ja) * 2001-08-15 2003-02-28 Sony Corp インダクタの製造方法
TW200635456A (en) * 2005-03-30 2006-10-01 Advanced Semiconductor Eng Method of fabricating a device-containing substrate
TW200711072A (en) * 2005-04-29 2007-03-16 Stats Chippac Ltd Semiconductor package including second substrate and having exposed substrate surfaces on upper and lower sides
TW201222782A (en) * 2010-06-30 2012-06-01 Nat Semiconductor Corp Galvanic isolation transformer

Also Published As

Publication number Publication date
KR20150115867A (ko) 2015-10-14
EP2954543A1 (en) 2015-12-16
TW201443940A (zh) 2014-11-16
CN104969312B (zh) 2018-05-15
TWI600037B (zh) 2017-09-21
US20140225700A1 (en) 2014-08-14
EP2954543B1 (en) 2020-04-29
JP2016513364A (ja) 2016-05-12
WO2014123790A1 (en) 2014-08-14
CN104969312A (zh) 2015-10-07
TW201640535A (zh) 2016-11-16
US10115661B2 (en) 2018-10-30

Similar Documents

Publication Publication Date Title
TWI611437B (zh) 無基板個別耦合電感器結構、電感器結構設備及用於提供電感器結構之方法
JP6476132B2 (ja) 基板内結合インダクタ構造
US10256286B2 (en) Integrated inductor for integrated circuit devices
KR101589041B1 (ko) 자기 코어 인덕터(ｍｃｉ) 다이 및 이를 포함하는 반도체 패키지와 mci 다이를 제조하는 방법
CN107408513A (zh) 包括嵌入在封装基板中的具有保护环的磁芯电感器的集成器件封装
JP6377178B2 (ja) 埋込型パッケージ基板コンデンサ
US9142347B2 (en) Semiconductor package with air core inductor (ACI) having a metal-density layer unit of fractal geometry
TW201447937A (zh) 帶有使用高磁導率材料的通量集中的耦合個別電感器
US12402332B2 (en) Integrated passive devices
TW201730902A (zh) 具有被形成在核心上的線圈之電子封裝體
CN114256214A (zh) 中介片中的磁芯电感器

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees