TW200635456A - Method of fabricating a device-containing substrate - Google Patents

Method of fabricating a device-containing substrate

Info

Publication number
TW200635456A
TW200635456A TW094110143A TW94110143A TW200635456A TW 200635456 A TW200635456 A TW 200635456A TW 094110143 A TW094110143 A TW 094110143A TW 94110143 A TW94110143 A TW 94110143A TW 200635456 A TW200635456 A TW 200635456A
Authority
TW
Taiwan
Prior art keywords
conductive film
core
conductive
insulating layer
fabricating
Prior art date
Application number
TW094110143A
Other languages
Chinese (zh)
Other versions
TWI311452B (en
Inventor
Yung-Hui Wang
Ching-Fu Hung
Original Assignee
Advanced Semiconductor Eng
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Semiconductor Eng filed Critical Advanced Semiconductor Eng
Priority to TW94110143A priority Critical patent/TWI311452B/en
Publication of TW200635456A publication Critical patent/TW200635456A/en
Application granted granted Critical
Publication of TWI311452B publication Critical patent/TWI311452B/en

Links

Abstract

A method of fabricating a device-containing substrate is disclosed. First, a first conductive film having several conductive bumps is provided A device is fixed to the first conductive film by connecting the conductive bumps and the electrodes of the device. A core having a receiving space and interlayer circuit on two sides of the core is provided. Then, the device is embedded into the receiving space. Next, an insulating layer is formed to encapsulate the device, core and interlayer circuit on the core. Accordingly, the first conductive film is positioned below the device. A second conductive film is further formed on the insulating layer and above the device. Then, several through holes are formed to open through the second conductive film, insulating layer, core and first conductive film. Next, a conductive layer is formed at the sidewalis of the through holes, and an outside circuit is formed by patterning the first and second conductive films. Finally, a solder mask is formed to cover the outside circuit.
TW94110143A 2005-03-30 2005-03-30 Method of fabricating a device-containing substrate TWI311452B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94110143A TWI311452B (en) 2005-03-30 2005-03-30 Method of fabricating a device-containing substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94110143A TWI311452B (en) 2005-03-30 2005-03-30 Method of fabricating a device-containing substrate

Publications (2)

Publication Number Publication Date
TW200635456A true TW200635456A (en) 2006-10-01
TWI311452B TWI311452B (en) 2009-06-21

Family

ID=45072428

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94110143A TWI311452B (en) 2005-03-30 2005-03-30 Method of fabricating a device-containing substrate

Country Status (1)

Country Link
TW (1) TWI311452B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI416685B (en) * 2010-03-04 2013-11-21 Unimicron Technology Corp Package substrate and fabrication method thereof
CN104969312A (en) * 2013-02-08 2015-10-07 高通股份有限公司 Substrate-less discrete coupled inductor structure

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI416685B (en) * 2010-03-04 2013-11-21 Unimicron Technology Corp Package substrate and fabrication method thereof
CN104969312A (en) * 2013-02-08 2015-10-07 高通股份有限公司 Substrate-less discrete coupled inductor structure
TWI611437B (en) * 2013-02-08 2018-01-11 高通公司 Substrate-less discrete coupled inductor structure, inductor structure apparatus, and method for providing the inductor structure
CN104969312B (en) * 2013-02-08 2018-05-15 高通股份有限公司 Without the discrete coupled-inductor structure of substrate
US10115661B2 (en) 2013-02-08 2018-10-30 Qualcomm Incorporated Substrate-less discrete coupled inductor structure

Also Published As

Publication number Publication date
TWI311452B (en) 2009-06-21

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