TWI609994B - 電漿處理方法及電漿處理裝置 - Google Patents
電漿處理方法及電漿處理裝置 Download PDFInfo
- Publication number
- TWI609994B TWI609994B TW103137323A TW103137323A TWI609994B TW I609994 B TWI609994 B TW I609994B TW 103137323 A TW103137323 A TW 103137323A TW 103137323 A TW103137323 A TW 103137323A TW I609994 B TWI609994 B TW I609994B
- Authority
- TW
- Taiwan
- Prior art keywords
- electrostatic chuck
- plasma
- processing
- processed
- plasma processing
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 281
- 238000003672 processing method Methods 0.000 title claims description 31
- 238000000034 method Methods 0.000 claims abstract description 184
- 239000000126 substance Substances 0.000 claims abstract description 88
- 238000001179 sorption measurement Methods 0.000 claims abstract description 76
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 75
- 238000000926 separation method Methods 0.000 claims abstract description 41
- 238000009832 plasma treatment Methods 0.000 claims abstract description 33
- 150000002500 ions Chemical class 0.000 claims abstract description 17
- 230000008569 process Effects 0.000 claims description 171
- 238000004140 cleaning Methods 0.000 claims description 45
- 238000012804 iterative process Methods 0.000 claims 1
- 239000000047 product Substances 0.000 claims 1
- 210000002381 plasma Anatomy 0.000 description 226
- 235000012431 wafers Nutrition 0.000 description 91
- 239000007789 gas Substances 0.000 description 89
- 230000006872 improvement Effects 0.000 description 32
- 238000010586 diagram Methods 0.000 description 17
- 238000012546 transfer Methods 0.000 description 14
- 239000013078 crystal Substances 0.000 description 11
- 230000007423 decrease Effects 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 101100109086 Schizosaccharomyces pombe (strain 972 / ATCC 24843) apc14 gene Proteins 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000001464 adherent effect Effects 0.000 description 4
- 238000005108 dry cleaning Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Plasma Technology (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013227500 | 2013-10-31 | ||
| JP2014078196 | 2014-04-04 | ||
| JP2014211142A JP6273188B2 (ja) | 2013-10-31 | 2014-10-15 | プラズマ処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201534762A TW201534762A (zh) | 2015-09-16 |
| TWI609994B true TWI609994B (zh) | 2018-01-01 |
Family
ID=52994237
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103137323A TWI609994B (zh) | 2013-10-31 | 2014-10-29 | 電漿處理方法及電漿處理裝置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9330891B2 (enExample) |
| JP (1) | JP6273188B2 (enExample) |
| TW (1) | TWI609994B (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6423706B2 (ja) * | 2014-12-16 | 2018-11-14 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US10892136B2 (en) * | 2018-08-13 | 2021-01-12 | Varian Semiconductor Equipment Associates, Inc. | Ion source thermal gas bushing |
| JP7378276B2 (ja) * | 2019-11-12 | 2023-11-13 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| TWI748741B (zh) * | 2020-11-11 | 2021-12-01 | 暉盛科技股份有限公司 | 電漿晶圓清潔機及使用其清潔晶圓的方法 |
| CN114695234B (zh) * | 2020-12-31 | 2025-06-13 | 拓荆科技股份有限公司 | 保护机构及保护晶圆和销的方法 |
| CN115241034A (zh) * | 2022-07-28 | 2022-10-25 | 北京北方华创微电子装备有限公司 | 半导体工艺方法及半导体工艺设备 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070217119A1 (en) * | 2006-03-17 | 2007-09-20 | David Johnson | Apparatus and Method for Carrying Substrates |
| US7381673B2 (en) * | 2003-10-27 | 2008-06-03 | Kyocera Corporation | Composite material, wafer holding member and method for manufacturing the same |
| US20080276865A1 (en) * | 2006-11-29 | 2008-11-13 | Toto Ltd. | Electrostatic Chuck, Manufacturing method thereof and substrate treating apparatus |
| US20100140221A1 (en) * | 2008-12-09 | 2010-06-10 | Tokyo Electron Limited | Plasma etching apparatus and plasma cleaning method |
| US20120175063A1 (en) * | 2011-01-07 | 2012-07-12 | Tokyo Electron Limited | Substrate processing apparatus |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3271389B2 (ja) * | 1993-09-06 | 2002-04-02 | 富士電機株式会社 | 静電チャックの使用方法 |
| JP2971369B2 (ja) * | 1995-08-31 | 1999-11-02 | トーカロ株式会社 | 静電チャック部材およびその製造方法 |
| US5812362A (en) * | 1996-06-14 | 1998-09-22 | Applied Materials, Inc. | Method and apparatus for the use of diamond films as dielectric coatings on electrostatic chucks |
| TW422892B (en) * | 1997-03-27 | 2001-02-21 | Applied Materials Inc | Technique for improving chucking reproducibility |
| JP3657942B2 (ja) * | 2003-01-16 | 2005-06-08 | 沖電気工業株式会社 | 半導体製造装置の洗浄方法、及び半導体装置の製造方法 |
| US6944006B2 (en) * | 2003-04-03 | 2005-09-13 | Applied Materials, Inc. | Guard for electrostatic chuck |
| US20060008676A1 (en) * | 2004-07-07 | 2006-01-12 | General Electric Company | Protective coating on a substrate and method of making thereof |
| JP2006210461A (ja) | 2005-01-26 | 2006-08-10 | Tokyo Electron Ltd | プロセス装置の洗浄方法、該方法を実行するためのプログラム、及び記憶媒体 |
| JP4469364B2 (ja) | 2006-12-11 | 2010-05-26 | キヤノンアネルバ株式会社 | 絶縁膜エッチング装置 |
| JP2010199475A (ja) * | 2009-02-27 | 2010-09-09 | Tokyo Electron Ltd | プラズマ処理装置のクリーニング方法及び記憶媒体 |
| JP5364514B2 (ja) * | 2009-09-03 | 2013-12-11 | 東京エレクトロン株式会社 | チャンバ内クリーニング方法 |
| JP5450187B2 (ja) * | 2010-03-16 | 2014-03-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| JP5638405B2 (ja) * | 2010-10-08 | 2014-12-10 | パナソニック株式会社 | 基板のプラズマ処理方法 |
| JP2012109472A (ja) | 2010-11-19 | 2012-06-07 | Hitachi High-Technologies Corp | プラズマ処理方法 |
| US20130247935A1 (en) * | 2011-10-31 | 2013-09-26 | Seh-Jin Park | Getter reticle |
-
2014
- 2014-10-15 JP JP2014211142A patent/JP6273188B2/ja active Active
- 2014-10-29 TW TW103137323A patent/TWI609994B/zh active
- 2014-10-29 US US14/527,536 patent/US9330891B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7381673B2 (en) * | 2003-10-27 | 2008-06-03 | Kyocera Corporation | Composite material, wafer holding member and method for manufacturing the same |
| US20070217119A1 (en) * | 2006-03-17 | 2007-09-20 | David Johnson | Apparatus and Method for Carrying Substrates |
| US20080276865A1 (en) * | 2006-11-29 | 2008-11-13 | Toto Ltd. | Electrostatic Chuck, Manufacturing method thereof and substrate treating apparatus |
| US20100140221A1 (en) * | 2008-12-09 | 2010-06-10 | Tokyo Electron Limited | Plasma etching apparatus and plasma cleaning method |
| US20120175063A1 (en) * | 2011-01-07 | 2012-07-12 | Tokyo Electron Limited | Substrate processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| US9330891B2 (en) | 2016-05-03 |
| US20150114930A1 (en) | 2015-04-30 |
| TW201534762A (zh) | 2015-09-16 |
| JP2015201618A (ja) | 2015-11-12 |
| JP6273188B2 (ja) | 2018-01-31 |
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