JP6273188B2 - プラズマ処理方法 - Google Patents

プラズマ処理方法 Download PDF

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Publication number
JP6273188B2
JP6273188B2 JP2014211142A JP2014211142A JP6273188B2 JP 6273188 B2 JP6273188 B2 JP 6273188B2 JP 2014211142 A JP2014211142 A JP 2014211142A JP 2014211142 A JP2014211142 A JP 2014211142A JP 6273188 B2 JP6273188 B2 JP 6273188B2
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Japan
Prior art keywords
electrostatic chuck
plasma
processed
plasma processing
containing material
Prior art date
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JP2014211142A
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English (en)
Japanese (ja)
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JP2015201618A5 (enExample
JP2015201618A (ja
Inventor
龍 野中
龍 野中
雅紀 佐藤
雅紀 佐藤
奈津紀 籔本
奈津紀 籔本
貴光 高山
貴光 高山
彰俊 原田
彰俊 原田
佐々木　淳一
淳一 佐々木
秀敏 花岡
秀敏 花岡
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2014211142A priority Critical patent/JP6273188B2/ja
Priority to TW103137323A priority patent/TWI609994B/zh
Priority to US14/527,536 priority patent/US9330891B2/en
Publication of JP2015201618A publication Critical patent/JP2015201618A/ja
Publication of JP2015201618A5 publication Critical patent/JP2015201618A5/ja
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Publication of JP6273188B2 publication Critical patent/JP6273188B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
JP2014211142A 2013-10-31 2014-10-15 プラズマ処理方法 Active JP6273188B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014211142A JP6273188B2 (ja) 2013-10-31 2014-10-15 プラズマ処理方法
TW103137323A TWI609994B (zh) 2013-10-31 2014-10-29 電漿處理方法及電漿處理裝置
US14/527,536 US9330891B2 (en) 2013-10-31 2014-10-29 Plasma processing method and plasma processing apparatus

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2013227500 2013-10-31
JP2013227500 2013-10-31
JP2014078196 2014-04-04
JP2014078196 2014-04-04
JP2014211142A JP6273188B2 (ja) 2013-10-31 2014-10-15 プラズマ処理方法

Publications (3)

Publication Number Publication Date
JP2015201618A JP2015201618A (ja) 2015-11-12
JP2015201618A5 JP2015201618A5 (enExample) 2017-08-31
JP6273188B2 true JP6273188B2 (ja) 2018-01-31

Family

ID=52994237

Family Applications (1)

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JP2014211142A Active JP6273188B2 (ja) 2013-10-31 2014-10-15 プラズマ処理方法

Country Status (3)

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US (1) US9330891B2 (enExample)
JP (1) JP6273188B2 (enExample)
TW (1) TWI609994B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6423706B2 (ja) * 2014-12-16 2018-11-14 東京エレクトロン株式会社 プラズマ処理装置
US10892136B2 (en) * 2018-08-13 2021-01-12 Varian Semiconductor Equipment Associates, Inc. Ion source thermal gas bushing
JP7378276B2 (ja) * 2019-11-12 2023-11-13 東京エレクトロン株式会社 プラズマ処理装置
TWI748741B (zh) * 2020-11-11 2021-12-01 暉盛科技股份有限公司 電漿晶圓清潔機及使用其清潔晶圓的方法
CN114695234B (zh) * 2020-12-31 2025-06-13 拓荆科技股份有限公司 保护机构及保护晶圆和销的方法
CN115241034A (zh) * 2022-07-28 2022-10-25 北京北方华创微电子装备有限公司 半导体工艺方法及半导体工艺设备

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3271389B2 (ja) * 1993-09-06 2002-04-02 富士電機株式会社 静電チャックの使用方法
JP2971369B2 (ja) * 1995-08-31 1999-11-02 トーカロ株式会社 静電チャック部材およびその製造方法
US5812362A (en) * 1996-06-14 1998-09-22 Applied Materials, Inc. Method and apparatus for the use of diamond films as dielectric coatings on electrostatic chucks
TW422892B (en) * 1997-03-27 2001-02-21 Applied Materials Inc Technique for improving chucking reproducibility
JP3657942B2 (ja) * 2003-01-16 2005-06-08 沖電気工業株式会社 半導体製造装置の洗浄方法、及び半導体装置の製造方法
US6944006B2 (en) * 2003-04-03 2005-09-13 Applied Materials, Inc. Guard for electrostatic chuck
KR100841148B1 (ko) * 2003-10-27 2008-06-24 교세라 가부시키가이샤 복합재료와 웨이퍼 유지부재 및 이들의 제조방법
US20060008676A1 (en) * 2004-07-07 2006-01-12 General Electric Company Protective coating on a substrate and method of making thereof
JP2006210461A (ja) 2005-01-26 2006-08-10 Tokyo Electron Ltd プロセス装置の洗浄方法、該方法を実行するためのプログラム、及び記憶媒体
US20070217119A1 (en) * 2006-03-17 2007-09-20 David Johnson Apparatus and Method for Carrying Substrates
JP2008160093A (ja) * 2006-11-29 2008-07-10 Toto Ltd 静電チャック、静電チャックの製造方法および基板処理装置
JP4469364B2 (ja) 2006-12-11 2010-05-26 キヤノンアネルバ株式会社 絶縁膜エッチング装置
JP5390846B2 (ja) * 2008-12-09 2014-01-15 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマクリーニング方法
JP2010199475A (ja) * 2009-02-27 2010-09-09 Tokyo Electron Ltd プラズマ処理装置のクリーニング方法及び記憶媒体
JP5364514B2 (ja) * 2009-09-03 2013-12-11 東京エレクトロン株式会社 チャンバ内クリーニング方法
JP5450187B2 (ja) * 2010-03-16 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP5638405B2 (ja) * 2010-10-08 2014-12-10 パナソニック株式会社 基板のプラズマ処理方法
JP2012109472A (ja) 2010-11-19 2012-06-07 Hitachi High-Technologies Corp プラズマ処理方法
JP5719599B2 (ja) * 2011-01-07 2015-05-20 東京エレクトロン株式会社 基板処理装置
US20130247935A1 (en) * 2011-10-31 2013-09-26 Seh-Jin Park Getter reticle

Also Published As

Publication number Publication date
TWI609994B (zh) 2018-01-01
US9330891B2 (en) 2016-05-03
US20150114930A1 (en) 2015-04-30
TW201534762A (zh) 2015-09-16
JP2015201618A (ja) 2015-11-12

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