TWI606615B - 低成本囊封發光裝置 - Google Patents

低成本囊封發光裝置 Download PDF

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Publication number
TWI606615B
TWI606615B TW101101821A TW101101821A TWI606615B TW I606615 B TWI606615 B TW I606615B TW 101101821 A TW101101821 A TW 101101821A TW 101101821 A TW101101821 A TW 101101821A TW I606615 B TWI606615 B TW I606615B
Authority
TW
Taiwan
Prior art keywords
light
film
emitting elements
reflective structures
reflective
Prior art date
Application number
TW101101821A
Other languages
English (en)
Chinese (zh)
Other versions
TW201238092A (en
Inventor
塞吉 喬爾 亞曼德 拜惠森
Original Assignee
皇家飛利浦電子股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 皇家飛利浦電子股份有限公司 filed Critical 皇家飛利浦電子股份有限公司
Publication of TW201238092A publication Critical patent/TW201238092A/zh
Application granted granted Critical
Publication of TWI606615B publication Critical patent/TWI606615B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Led Device Packages (AREA)
TW101101821A 2011-01-17 2012-01-17 低成本囊封發光裝置 TWI606615B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201161433306P 2011-01-17 2011-01-17

Publications (2)

Publication Number Publication Date
TW201238092A TW201238092A (en) 2012-09-16
TWI606615B true TWI606615B (zh) 2017-11-21

Family

ID=45560941

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101101821A TWI606615B (zh) 2011-01-17 2012-01-17 低成本囊封發光裝置

Country Status (7)

Country Link
US (1) US8907364B2 (https=)
EP (1) EP2666193B1 (https=)
JP (1) JP5932835B2 (https=)
KR (1) KR101897308B1 (https=)
CN (1) CN103443943B (https=)
TW (1) TWI606615B (https=)
WO (1) WO2012101488A1 (https=)

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Publication number Priority date Publication date Assignee Title
WO2013118076A1 (en) * 2012-02-10 2013-08-15 Koninklijke Philips N.V. Low cost encapsulated light-emitting device
US9484504B2 (en) * 2013-05-14 2016-11-01 Apple Inc. Micro LED with wavelength conversion layer
JP6516190B2 (ja) 2013-05-20 2019-05-22 ルミレッズ ホールディング ベーフェー ドームを有するチップスケール発光デバイスパッケージ
US9111464B2 (en) 2013-06-18 2015-08-18 LuxVue Technology Corporation LED display with wavelength conversion layer
TWD167284S (zh) * 2014-01-14 2015-04-21 隆達電子股份有限公司 導線架料帶之部分
USD780704S1 (en) * 2014-08-27 2017-03-07 Mitsubishi Electric Corporation Light source module
USD768584S1 (en) * 2014-11-13 2016-10-11 Mitsubishi Electric Corporation Light source module
CN105047793B (zh) * 2015-08-20 2018-07-06 厦门市三安光电科技有限公司 发光二极管封装结构的制作方法
DE102016112293A1 (de) * 2016-07-05 2018-01-11 Osram Opto Semiconductors Gmbh Verfahren zum herstellen eines optoelektronischen bauelements und optoelektronisches bauelement
CN107845717A (zh) * 2016-09-21 2018-03-27 深圳市兆驰节能照明股份有限公司 Csp光源及其制造方法和制造模具
TWI635470B (zh) * 2017-07-04 2018-09-11 PlayNitride Inc. 發光模組及顯示裝置
DE102018112332A1 (de) * 2018-05-23 2019-11-28 Osram Opto Semiconductors Gmbh Bauteil und verfahren zur herstellung eines bauteils
KR102739657B1 (ko) * 2019-05-23 2024-12-09 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자패키지 및 광원장치
JP7244771B2 (ja) * 2020-04-02 2023-03-23 日亜化学工業株式会社 面状光源の製造方法
JP2023179115A (ja) * 2022-06-07 2023-12-19 株式会社ジャパンディスプレイ 表示装置
CN115084108A (zh) * 2022-07-04 2022-09-20 纳欣科技有限公司 发光模组及其制作方法、以及显示面板和电子设备
CN115528161A (zh) * 2022-10-26 2022-12-27 上海天马微电子有限公司 显示面板的制作方法、显示面板及显示装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3844196B2 (ja) 2001-06-12 2006-11-08 シチズン電子株式会社 発光ダイオードの製造方法
JP4048783B2 (ja) * 2002-01-18 2008-02-20 ソニー株式会社 電子装置の製造方法
JP3962282B2 (ja) * 2002-05-23 2007-08-22 松下電器産業株式会社 半導体装置の製造方法
TW563263B (en) * 2002-09-27 2003-11-21 United Epitaxy Co Ltd Surface mounting method for high power light emitting diode
JP2005079329A (ja) 2003-08-29 2005-03-24 Stanley Electric Co Ltd 表面実装型発光ダイオード
US7915085B2 (en) * 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
JP2006346961A (ja) * 2005-06-15 2006-12-28 Matsushita Electric Ind Co Ltd 樹脂膜の形成方法及び光半導体装置の製造方法
KR20080083830A (ko) * 2007-03-13 2008-09-19 삼성전기주식회사 Ｌｅｄ 패키지 및 그 제조방법
JP2009117536A (ja) * 2007-11-05 2009-05-28 Towa Corp 樹脂封止発光体及びその製造方法
JP5324114B2 (ja) * 2008-03-27 2013-10-23 リンテック株式会社 発光モジュール用シートの製造方法、発光モジュール用シート
JP5440010B2 (ja) * 2008-09-09 2014-03-12 日亜化学工業株式会社 光半導体装置及びその製造方法
TWI420695B (zh) * 2008-10-21 2013-12-21 榮創能源科技股份有限公司 化合物半導體元件之封裝模組結構及其製造方法
KR101025980B1 (ko) * 2008-11-28 2011-03-30 삼성엘이디 주식회사 질화물계 반도체 발광소자의 제조방법
CN102884645B (zh) * 2010-01-29 2015-05-27 西铁城电子株式会社 发光装置的制造方法以及发光装置
DE202010008705U1 (de) 2010-10-04 2010-12-30 Harvatek Corp. Arrayartiges Multi-Chip-Gehäuse für LEDs

Also Published As

Publication number Publication date
TW201238092A (en) 2012-09-16
EP2666193A1 (en) 2013-11-27
EP2666193B1 (en) 2020-07-29
WO2012101488A9 (en) 2013-09-06
KR20140004726A (ko) 2014-01-13
JP2014503122A (ja) 2014-02-06
CN103443943A (zh) 2013-12-11
CN103443943B (zh) 2017-07-21
US20130285082A1 (en) 2013-10-31
KR101897308B1 (ko) 2018-09-10
JP5932835B2 (ja) 2016-06-08
WO2012101488A1 (en) 2012-08-02
US8907364B2 (en) 2014-12-09

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