CN103443943B - 包括密封的led封装 - Google Patents
包括密封的led封装 Download PDFInfo
- Publication number
- CN103443943B CN103443943B CN201180065259.9A CN201180065259A CN103443943B CN 103443943 B CN103443943 B CN 103443943B CN 201180065259 A CN201180065259 A CN 201180065259A CN 103443943 B CN103443943 B CN 103443943B
- Authority
- CN
- China
- Prior art keywords
- light
- film
- catoptric arrangement
- emitting component
- emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005538 encapsulation Methods 0.000 title description 5
- 239000000565 sealant Substances 0.000 claims abstract description 23
- 230000003287 optical effect Effects 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 239000003795 chemical substances by application Substances 0.000 claims 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241001270131 Agaricus moelleri Species 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
发光元件(110)设置于膜(210)上,然后由放置或形成于该膜(210)上的反射结构(250)环绕。之后,用密封剂(270)填充该反射结构(250),将该发光元件(110)附于该反射结构(250)内。然后可移除该膜(210),暴露接触(230)用于将该发光元件(110)耦合至外部电源。将该反射结构(250)内的已密封的发光元件(110)切块/单粒化以提供单独的发光装置。该密封剂(270)可经模制或以其他方式成形以提供期望的光学功能。
Description
技术领域
本发明涉及发光装置的领域,且具体地涉及一种使用光出射面大于其光入射面的基本上平顶的密封剂来密封的发光装置,以及一种用于产生该装置的方法。
背景技术
固态发光装置(LED)正用于不断增加的各种应用中,且随著市场容量增加,每一装置的成本变得越来越重要。同样地,随著市场竞争加剧,竞争产品的相关性能也变得越来越重要。
为改善光输出效率,发光装置通常包括用于沿期望的方向反射杂散光的反射元件。图1A及1B图解说明了具有反射元件的实例发光装置。
在图1A中,发光元件110放置于反射杯120中,该反射杯120通常也用作用于将该元件耦合至外部电源的接触130。元件110通常将包括在两个电极之间的发光材料、经由反射杯120连接至接触130的下部电极、以及线接合至另一接触130的上部电极的夹层配置。随后将发光元件 110、反射杯 120及电极 130密封于密封材料 170中,诸如以透镜的形状模制的环氧树脂。
在图1B中,发光元件110安装于基板160上,且环绕元件110的区域涂有反射层125,诸如白色电介质。在该实例中,电路迹线140耦合至元件110,且通孔通路(via)145将迹线140耦合至基板160的下表面处的电极135。以此方式,发光装置可直接安装于印刷电路板或其他安装表面上。
图1A的实例装置有利地包括反射杯,其经成形以将光输出引导成集中的光束,但在安装及线接合并随后密封该发光元件110的同时,该制造工艺需要反射杯120的支持。另一方面,图1B的实例装置的制造可能比图1A的装置的制造更简单,但大体而言出于高提取效率的目的而需要密封剂150为基本上大且弯曲的,且反射表面125并不与反射杯120一样地引导光。
发明内容
提供一种更简单的手段以制造一种具有增强光输出并向前引导光的反射结构的发光装置将是有利的。
此优势和/或其他优势可通过一种制造工艺来实现,该制造工艺包括:将发光元件安装于膜上,然后用反射结构环绕该膜上的每个发光元件。之后,用密封剂填充该反射结构,将该发光元件附于该反射结构内。然后可移除该膜,暴露用于将该发光元件耦合至外部电源的接触(contact)。将该反射结构内的已密封的发光元件切块/单粒化以提供单独的发光装置。该密封剂可经模制或以其他方式成形以提供期望的光学功能。
附图说明
参考所附附图,通过实例的方式进一步详细地解释本发明,在附图中:
图1A和1B图解说明实例性现有技术发光装置。
图2A-2D图解说明具有整体反射结构的发光装置的实例性制造。
图3A-3C图解说明具有整体反射结构的发光装置的实例性可替换特征。
图4图解说明用于提供具有整体反射结构的发光装置的实例性流程图。
图5A-5B图解说明具有多个发光元件的发光装置的实例性结构。
贯穿附图,相同的附图标记指示相似或对应的特征或功能。附图被包括以用于示例的目的并且不意图限制本发明的范围。
具体实施方式
在以下说明中,出于解释而非限定的目的,陈述诸如特定架构、界面、技术等的特定细节,以提供对本发明概念的透彻理解。然而,本领域技术人员将清楚,本发明可在背离这些特定细节的其他实施例中实践。同样地,该说明书的文字涉及如图中所图解说明的实例性实施例,而不意欲超出权利要求中明确包括的限定来限定所要求保护的发明。出于简明及清楚的目的,省略已知的装置、电路及方法的详细说明,以免用不必要的细节模糊对本发明说明。
图2A-2D图解说明具有整体反射结构的发光装置的实例性制造。
图2A图解说明发光元件110在膜210上的放置。在优选的实施例中,发光元件110经结构化以在它们的下部表面上具有接触230,以便于在移除膜210时耦合至外部电源。元件110可使用常规拾取及放置工艺放置于膜210上。可替换地,可将元件110的区块放置于弹性膜上,该弹性膜随后经拉伸以分离元件110来适当地设置元件110。大体而言,本文使用术语“膜”以将其与“基板”区别,因为膜本身未必需要提供结构支撑。柔性膜由于其与刚性膜相比的较低成本而尤其适于此工艺,但刚性膜可良好地适于膜的重复使用。
在图2B处,反射结构250设置于膜210上,环绕每个发光元件110。在图2C中图解说明发光装置的实例性框架的俯视图。在此实例中,结构250包括一组平面,其相对于对应发光元件110成角度。该些成角度的侧壁用于有效地反射光而用于额外光提取并自发光元件110向前引导由反射结构250反射的光。
可以以多种方式将结构250添加至膜210。可仅将具有用于发光元件110的开口的反射材料的预形成的框架放置在膜210上。可替换地,可使用经图案化以避免将反射材料放置于元件110的位置处的模具将结构250直接模制于膜210上。举例而言,可使用半导体制造技术领域中常见的技术将白色电介质材料的浆液注射模制于膜210上。可替换地,可将反射涂层施加于经成形的结构的顶部上以形成反射结构250。
同样可替换地,可使用常规的拾取及放置工艺将单独的反射结构250放置于膜上,而非提供或形成包括多个反射结构的框架。鉴于本公开,用于放置或形成环绕膜上的发光元件110的反射结构的其他技术将对于本领域技术人员是明显的。
在将发光元件110及反射结构250设置于膜210上之后,施加密封剂270,填充反射结构250并将发光元件110附至这些反射结构250,如图2D中所示。一旦密封剂将发光元件110附至反射结构250,可移除膜210,暴露接触230用于耦合至外部电源。
为进一步便于耦合至接触230,反射结构250的下部层可包括易移除的材料,以便在移除时,接触230将稍微低于结构250的剩余表面延伸。这种施加至反射结构和/或LED芯片的底部接触的牺牲性可移除层也可用于在移除之后自膜移除任何过量材料。
如图2D中所图解说明,密封剂的上部表面可以是平的。在许多应用中,发光装置耦合至直线(rectilinear)波导或具有一相对平的光输入表面的其他结构。例如,边缘照明波导正越来越多地用于对显示器提供背光照明,并且表面照明波导正越来越多地用于提供高强度边缘发射灯。通过在LED上提供对应于传输元件上的平面的平面,增加了进入波导的光耦合效率。通过围绕发光元件提供反射结构,可基本上独立于发光元件的大小及形状来定制发光装置的输出表面的大小及形状以符合传输元件。
本领域技术人员将认识到,可使用各种形状中的任一者来形成反射结构。举例而言,图3 A图解说明了与图2A的平面表面250相比为弯曲的反射表面350。同样地,图3B图解说明了自顶部观查为圆形的结构360。
密封剂也可以以各种形状形成以获得期望的光学效应。举例而言,密封剂可为圆顶状的,类似于图1中的密封剂170的圆顶状形状,其可用于横跨宽的输出角来扩展光输出。另一方面,图3C图解说明了用于结合反射器来提取光的更复杂的形状,并提供了被引导的光输出。
图4图解说明了实例性流程图,以便于制造具有整体反射结构的发光装置。在410处,将发光元件放置于膜上,且在420处,将具有用于发光元件的孔径的反射结构放置或形成于膜上。
本领域技术人员将认识到,此放置和/或形成的顺序可为相反的,因为可在膜上提供或形成该些结构,且可将发光元件放置于被提供用于容纳这些发光元件的孔径内。同样地,可通过将膜施加至反射结构的框架的下部表面来实现这些结构在膜上的放置。
在其中孔径的下端的形状对应于发光元件的形状的实施例中,该孔径可提供参考基准用于放置每个发光元件,由此便于在常规的拾取及放置工艺中准确放置每个发光元件。
随著反射结构及发光元件被设置于它们在膜上的期望的相对位置处,在430处,将密封剂放置于反射结构内。大体而言,密封剂将填充该结构,但期望的光输出特性可要求该结构的部分填充。在440处,可再次依赖于期望的光输出特性而将密封剂模制成期望的形状。
可选地,可在密封之前、期间或之后将其他元件添加至该结构。举例而言,可添加诸如磷光体的波长转换元件作为分立的元件,其设置于发光元件的顶部上或密封剂的顶部上,或由密封剂分层/夹在中间,或可将磷光体嵌入于密封剂内。
随著发光元件附至反射结构,在450处,通常可移除该膜以暴露发光元件上的接触。可替换地,该膜可包括用于提供连接至发光元件的导电迹线,且在这种实施例中,将不移除该膜。然后可将其附至用作散热器的金属条带。可使用银膏将LED焊接、附接至膜上的迹线,或使用微弹簧或微凸块电连接LED。
在460处,将多个反射结构及发光元件分离或“单粒化”成单独的发光装置。此单粒化将取决于反射结构的性质。在420处,若将结构单独地放置于膜上,或作为单独的结构形成于膜上,则在450处移除该膜将实现此单粒化。可替换地,若将结构的框架形成或放置于膜上,则此单粒化将通过将该框架适当地切片/切块来实现。本领域技术人员将认识到,可通过在框架上形成诸如划线或凹槽的分离特征来便于框架的该切片/切块。
尤其应注意,若用作反射结构的材料适合于暴露至单粒化的发光装置的预期的操作环境中,则无需进一步工艺来进一步“封装”该装置。尽管实例性实施例图解说明了经设计以最小化反射结构之间的空间的结构的框架,但本领域技术人员将认识到,可使得该结构的形状符合经单粒化发光装置的期望的总封装形状。也即,其中有发光元件的每个反射结构的腔的大小及形状可基于期望的光输出特性,而每个反射表面的外部大小及形状可基于期望的封装特性。
尽管已在附图及前述说明中图解说明及详细描述了本发明,但该图解说明及说明应认为是例示性或实例性而非限制性的;本发明并不限于所公开的实施例。
举例而言,虽然该些实例性实施例已包括发光元件与反射结构之间的一对一对应,以及对称的反射结构,但本领域技术人员将认识到,这并非限定性特征。举例而言,图5A图解说明了其中矩形反射结构530包围多个发光元件110的“光条”实施例。同样地,图5B图解说明了包围多个发光元件110的圆形反射结构535。可选地,反射材料的底部侧可出于易于焊接的目的而被图案化以具有便于自对准的特征。
在图5A或图5B的实例中的任一者中,多个发光元件110可设置于共同基板上,该共同基板具有共同地耦合至多个元件110的接触。可替换地,每个元件110可直接设置于膜上以便于独立耦合至外部电源。鉴于本公开,将多个发光元件容纳于反射结构内的其他方法对于本领域技术人员将是明显的。
根据对附图、公开内容及所附的权利要求的研究,本领域技术人员在实践所请求保护的发明时可理解及实现对所公开的实施例的其他变化。举例而言,虽然这些实例性实施例中的反射结构包括比光输入区域更大的光输出区域,但本领域技术人员将认识到,反射结构的大小及形状大体而言将取决于来自于特定发光元件的期望的光输出特性,且可采取各种形式中之任一者。
在解释这些权利要求时,应理解:
a)措辞“包括”不排除给定权利要求中所列元件或动作之外的其他元件或动作的存在;
b)元件之前的措辞“一”或“一个”不排除复数个这种元件的存在;
c)权利要求中的任何附图标记并不限定其范围;
d)若干个“装置”可由相同项或硬件或软件实现的结构或功能表示;
e)所公开的元件中的每个皆可由硬件部分(例如,包括分立和集成电子电路)、软件部分(例如,电脑编程)及其任何组合构成;
f)硬件部分可包括处理器,且软件部分可储存在非暂时性计算机可读介质上,且可经配置以使得处理器执行所公开元件中之一或多者的某些或全部功能;
g)硬件部分可由模拟和数字部分中之一者或两者构成;
h)除非另外特别指定,否则所公开的装置中之任一者或其部分可组合在一起或分离成进一步的部分:
i)除非特别指示,不意欲要求任何特定的动作序列;以及
j)术语“多个”元件包括两个或两个以上所请求保护的元件,且不暗示元件数目的任何特定范围;即,多个元件可少至两个元件,且可包括不可测量数目个元件。
Claims (11)
1.一种制造发光装置的方法,其包括:
提供可移除的膜,所述可移除的膜具有基本上平滑的表面,
提供多个发光元件,每个发光元件具有位于发光元件的与发光元件的发光表面相对的表面上的接触,
使所述多个发光元件中的每一个位于该可移除的膜上,使得所述接触位于该可移除的膜的表面上,
将多个反射结构添加至该可移除的膜,所述反射结构设置于该膜上以沿期望的光输出方向反射来自这些发光元件中一个或多个的光,
将密封剂添加于这些反射结构内,以将反射结构附至这些发光元件中的对应的一个或多个,
单粒化该多个反射结构,以提供包括附至每个反射结构的一个或多个发光元件的发光装置,以及
在添加密封剂之后移除该膜,暴露每个发光元件的接触,
其中,所述反射结构包括附接至所述可移除的膜的牺牲材料,并且所述方法还包括移除所述牺牲材料从而使所述接触低于所述反射结构的剩余表面延伸。
2.如权利要求1所述的方法,其包括成形密封剂的光输出表面以形成平面表面。
3.如权利要求1所述的方法,其包括成形密封剂的光输出表面以形成非平面表面。
4.如权利要求1所述的方法,其中将该多个反射结构添加至该膜包括:将包括该多个反射结构的框架附接至该膜。
5.如权利要求1所述的方法,其中将该多个反射结构添加至该膜包括:将该多个反射结构形成于该膜上。
6.如权利要求1所述的方法,其中该膜上的该多个反射结构提供参考基准用于将该多个发光元件设置于该膜上。
7.如权利要求1所述的方法,其包括添加多个波长转换元件。
8.一种发光装置,其包括:
可移除的膜,所述可移除的膜具有基本上平滑的表面,
该可移除的膜上的多个发光元件,每个发光元件具有位于发光元件的与发光元件的发光表面相对的表面上的接触,所述接触还位于该可移除的膜的表面上,
该可移除的膜上的多个反射结构,所述反射结构设置于该膜上以沿期望的光输出方向反射来自这些发光元件中一个或多个的光,以及
所述反射结构内的密封剂,其将这些发光元件中的对应的一个或多个附于延伸通过所述反射结构的孔径内;
其中从每个发光元件移除该可移除的膜暴露了发光元件的接触以便于电耦合至发光元件,并且
其中,所述反射结构包括附接至所述可移除的膜的牺牲材料,从而使在移除所述牺牲材料之后,所述接触低于所述反射结构的剩余表面延伸。
9.如权利要求8所述的发光装置,其中该密封剂的光输出表面是平面的。
10.如权利要求8所述的发光装置,其中该密封剂的光输出表面是非平面的。
11.如权利要求8所述的发光装置,其包括多个波长转换元件。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161433306P | 2011-01-17 | 2011-01-17 | |
US61/433,306 | 2011-01-17 | ||
US61/433306 | 2011-01-17 | ||
PCT/IB2011/056005 WO2012101488A1 (en) | 2011-01-17 | 2011-12-29 | Led package comprising encapsulation |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103443943A CN103443943A (zh) | 2013-12-11 |
CN103443943B true CN103443943B (zh) | 2017-07-21 |
Family
ID=45560941
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180065259.9A Active CN103443943B (zh) | 2011-01-17 | 2011-12-29 | 包括密封的led封装 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8907364B2 (zh) |
EP (1) | EP2666193B1 (zh) |
JP (1) | JP5932835B2 (zh) |
KR (1) | KR101897308B1 (zh) |
CN (1) | CN103443943B (zh) |
TW (1) | TWI606615B (zh) |
WO (1) | WO2012101488A1 (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013118076A1 (en) * | 2012-02-10 | 2013-08-15 | Koninklijke Philips N.V. | Low cost encapsulated light-emitting device |
US9484504B2 (en) * | 2013-05-14 | 2016-11-01 | Apple Inc. | Micro LED with wavelength conversion layer |
KR102185099B1 (ko) * | 2013-05-20 | 2020-12-02 | 루미리즈 홀딩 비.브이. | 돔을 가진 칩 규모 발광 디바이스 패키지 |
US9111464B2 (en) | 2013-06-18 | 2015-08-18 | LuxVue Technology Corporation | LED display with wavelength conversion layer |
USD780704S1 (en) * | 2014-08-27 | 2017-03-07 | Mitsubishi Electric Corporation | Light source module |
USD768584S1 (en) * | 2014-11-13 | 2016-10-11 | Mitsubishi Electric Corporation | Light source module |
CN105047793B (zh) * | 2015-08-20 | 2018-07-06 | 厦门市三安光电科技有限公司 | 发光二极管封装结构的制作方法 |
DE102016112293A1 (de) * | 2016-07-05 | 2018-01-11 | Osram Opto Semiconductors Gmbh | Verfahren zum herstellen eines optoelektronischen bauelements und optoelektronisches bauelement |
CN107845717A (zh) * | 2016-09-21 | 2018-03-27 | 深圳市兆驰节能照明股份有限公司 | Csp光源及其制造方法和制造模具 |
TWI635470B (zh) * | 2017-07-04 | 2018-09-11 | 錼創科技股份有限公司 | 發光模組及顯示裝置 |
DE102018112332A1 (de) * | 2018-05-23 | 2019-11-28 | Osram Opto Semiconductors Gmbh | Bauteil und verfahren zur herstellung eines bauteils |
JP7244771B2 (ja) * | 2020-04-02 | 2023-03-23 | 日亜化学工業株式会社 | 面状光源の製造方法 |
CN115084108A (zh) * | 2022-07-04 | 2022-09-20 | 纳欣科技有限公司 | 发光模组及其制作方法、以及显示面板和电子设备 |
CN115528161A (zh) * | 2022-10-26 | 2022-12-27 | 上海天马微电子有限公司 | 显示面板的制作方法、显示面板及显示装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3844196B2 (ja) | 2001-06-12 | 2006-11-08 | シチズン電子株式会社 | 発光ダイオードの製造方法 |
JP4048783B2 (ja) * | 2002-01-18 | 2008-02-20 | ソニー株式会社 | 電子装置の製造方法 |
JP3962282B2 (ja) * | 2002-05-23 | 2007-08-22 | 松下電器産業株式会社 | 半導体装置の製造方法 |
TW563263B (en) * | 2002-09-27 | 2003-11-21 | United Epitaxy Co Ltd | Surface mounting method for high power light emitting diode |
JP2005079329A (ja) | 2003-08-29 | 2005-03-24 | Stanley Electric Co Ltd | 表面実装型発光ダイオード |
US7915085B2 (en) * | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
JP2006346961A (ja) * | 2005-06-15 | 2006-12-28 | Matsushita Electric Ind Co Ltd | 樹脂膜の形成方法及び光半導体装置の製造方法 |
KR20080083830A (ko) * | 2007-03-13 | 2008-09-19 | 삼성전기주식회사 | Led 패키지 및 그 제조방법 |
JP2009117536A (ja) * | 2007-11-05 | 2009-05-28 | Towa Corp | 樹脂封止発光体及びその製造方法 |
JP5324114B2 (ja) * | 2008-03-27 | 2013-10-23 | リンテック株式会社 | 発光モジュール用シートの製造方法、発光モジュール用シート |
JP5440010B2 (ja) * | 2008-09-09 | 2014-03-12 | 日亜化学工業株式会社 | 光半導体装置及びその製造方法 |
TWI420695B (zh) | 2008-10-21 | 2013-12-21 | Advanced Optoelectronic Tech | 化合物半導體元件之封裝模組結構及其製造方法 |
KR101025980B1 (ko) * | 2008-11-28 | 2011-03-30 | 삼성엘이디 주식회사 | 질화물계 반도체 발광소자의 제조방법 |
US8556672B2 (en) * | 2010-01-29 | 2013-10-15 | Citizen Electronics Co., Ltd. | Method of producing light-emitting device and light-emitting device |
DE202010008705U1 (de) | 2010-10-04 | 2010-12-30 | Harvatek Corp. | Arrayartiges Multi-Chip-Gehäuse für LEDs |
-
2011
- 2011-12-29 JP JP2013548898A patent/JP5932835B2/ja active Active
- 2011-12-29 EP EP11815634.8A patent/EP2666193B1/en active Active
- 2011-12-29 CN CN201180065259.9A patent/CN103443943B/zh active Active
- 2011-12-29 US US13/993,733 patent/US8907364B2/en active Active
- 2011-12-29 KR KR1020137021666A patent/KR101897308B1/ko active IP Right Grant
- 2011-12-29 WO PCT/IB2011/056005 patent/WO2012101488A1/en active Application Filing
-
2012
- 2012-01-17 TW TW101101821A patent/TWI606615B/zh active
Also Published As
Publication number | Publication date |
---|---|
TWI606615B (zh) | 2017-11-21 |
KR101897308B1 (ko) | 2018-09-10 |
JP5932835B2 (ja) | 2016-06-08 |
EP2666193B1 (en) | 2020-07-29 |
CN103443943A (zh) | 2013-12-11 |
JP2014503122A (ja) | 2014-02-06 |
EP2666193A1 (en) | 2013-11-27 |
KR20140004726A (ko) | 2014-01-13 |
TW201238092A (en) | 2012-09-16 |
US8907364B2 (en) | 2014-12-09 |
US20130285082A1 (en) | 2013-10-31 |
WO2012101488A1 (en) | 2012-08-02 |
WO2012101488A9 (en) | 2013-09-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103443943B (zh) | 包括密封的led封装 | |
CN107210342B (zh) | 发光装置及其制造方法 | |
US9966367B2 (en) | Light emitting device | |
KR101714615B1 (ko) | 반도체 발광장치의 제조방법, 반도체 발광장치 및 액정표시장치 | |
CN100505347C (zh) | 一种在led芯片表面制备荧光粉薄膜层的方法 | |
JP2008041968A (ja) | 発光素子モジュール | |
TW201304203A (zh) | 發光模組及其製造方法 | |
JP2009110737A (ja) | 照明装置及びその製造方法 | |
JP2014503122A5 (zh) | ||
JP2002164583A (ja) | チップ型発光ダイオード及びその製造方法 | |
JP2016531450A5 (zh) | ||
JP2004172160A (ja) | 発光素子 | |
WO2013118076A1 (en) | Low cost encapsulated light-emitting device | |
KR101252675B1 (ko) | 표면실장형 led | |
CN112735286A (zh) | Led灯珠 | |
CN109346624A (zh) | 一种柔性显示面板以及柔性显示装置 | |
US20080042157A1 (en) | Surface mount light emitting diode package | |
KR101086997B1 (ko) | 발광 소자 패키지와 그의 제조 방법 및 그를 이용한 카메라 플래시 모듈 | |
US9929309B2 (en) | Light-emitting diode package and method of manufacturing the same | |
CN110190068A (zh) | 显示面板和显示面板的制造方法 | |
CN101608743A (zh) | 光源模块、其对应的光棒及其对应的液晶显示装置 | |
JP2007324451A (ja) | 半導体発光装置 | |
US9681502B2 (en) | Lighting device | |
KR101250381B1 (ko) | 광패키지 및 그 제조방법 | |
KR100754884B1 (ko) | 발광소자 및 이의 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: Eindhoven, Netherlands Patentee after: KONINKLIJKE PHILIPS N.V. Address before: Eindhoven, Netherlands Patentee before: KONINKLIJKE PHILIPS ELECTRONICS N.V. |
|
CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200727 Address after: Holland Schiphol Patentee after: KONINKLIJKE PHILIPS NV Address before: Eindhoven, Netherlands Patentee before: KONINKLIJKE PHILIPS N.V. |
|
TR01 | Transfer of patent right |