JP5932835B2 - 低コストなカプセル化された発光装置 - Google Patents
低コストなカプセル化された発光装置 Download PDFInfo
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- JP5932835B2 JP5932835B2 JP2013548898A JP2013548898A JP5932835B2 JP 5932835 B2 JP5932835 B2 JP 5932835B2 JP 2013548898 A JP2013548898 A JP 2013548898A JP 2013548898 A JP2013548898 A JP 2013548898A JP 5932835 B2 JP5932835 B2 JP 5932835B2
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- 239000000463 material Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 15
- 238000005538 encapsulation Methods 0.000 claims description 3
- 239000002344 surface layer Substances 0.000 claims 3
- 238000006243 chemical reaction Methods 0.000 claims 1
- 238000007493 shaping process Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 10
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
Claims (10)
- フィルムを供給し、
各々が前記フィルムの表面上に配置されるコンタクトを持つ、複数の発光素子を前記フィルム上に付加し、
複数の反射性構造を前記フィルム上に付加し、前記反射性構造は、前記発光素子のうちの1又は複数の発光素子からの光を所望の光出力方向に反射するように置かれ、
前記反射性構造を対応する前記1又は複数の発光素子に取り付けるように、前記反射性構造内にカプセル化材料を付加し、
非平面を形成するように前記カプセル化材料の光出力表面を成形し、
前記1又は複数の発光素子を各反射性構造に取り付けて有する発光装置を供給するために、前記複数の反射性構造を個片化し、
前記カプセル化材料を付加した後に前記フィルムを除去して、前記発光素子の各々の前記コンタクトを露出させる、方法。 - 前記フィルムに取り付けられていた前記反射性構造の表面から材料を除去することを含む、請求項1記載の方法。
- 前記複数の反射性構造を前記フィルムに付加することが、前記複数の反射性構造を有するフレームを前記フィルムに取り付けることを含む、請求項1記載の方法。
- 前記複数の反射性構造を前記フィルムに付加することが、前記複数の反射性構造を前記フィルム上に形成することを含む、請求項1記載の方法。
- 前記フィルム上の前記複数の反射性構造が、前記複数の発光素子を前記フィルム上に置くための基準データムを提供する、請求項1記載の方法。
- 複数の波長変換素子を付加することを含む、請求項1記載の方法。
- フィルムと、
各々が前記フィルムの表面上に配置されるコンタクトを持つ、前記フィルム上の複数の発光素子と、
前記発光素子のうちの1又は複数の発光素子からの光を所望の光出力方向に反射するように前記フィルム上に配置された複数の反射性構造と、
前記反射性構造を通じて延在する開口内に、対応する前記1又は複数の発光素子を取り付ける、前記反射性構造内のカプセル化材料であり、当該カプセル化材料の光出口表面が非平面である、カプセル化材料と、
を有する構造体。 - 複数の波長変換素子を含む、請求項7記載の構造体。
- 前記複数の発光素子が、前記フィルムの表面上にあるコンタクトを含む、請求項7記載の構造体。
- 前記複数の反射性構造が、前記フィルムの表面上に配置された表面層を含み、前記表面層は、前記表面層の除去を促進する材料を有する、請求項7記載の構造体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161433306P | 2011-01-17 | 2011-01-17 | |
US61/433,306 | 2011-01-17 | ||
PCT/IB2011/056005 WO2012101488A1 (en) | 2011-01-17 | 2011-12-29 | Led package comprising encapsulation |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014503122A JP2014503122A (ja) | 2014-02-06 |
JP2014503122A5 JP2014503122A5 (ja) | 2016-03-10 |
JP5932835B2 true JP5932835B2 (ja) | 2016-06-08 |
Family
ID=45560941
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013548898A Active JP5932835B2 (ja) | 2011-01-17 | 2011-12-29 | 低コストなカプセル化された発光装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8907364B2 (ja) |
EP (1) | EP2666193B1 (ja) |
JP (1) | JP5932835B2 (ja) |
KR (1) | KR101897308B1 (ja) |
CN (1) | CN103443943B (ja) |
TW (1) | TWI606615B (ja) |
WO (1) | WO2012101488A1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013118076A1 (en) * | 2012-02-10 | 2013-08-15 | Koninklijke Philips N.V. | Low cost encapsulated light-emitting device |
US9484504B2 (en) * | 2013-05-14 | 2016-11-01 | Apple Inc. | Micro LED with wavelength conversion layer |
US9660154B2 (en) * | 2013-05-20 | 2017-05-23 | Koninklijke Philips N.V. | Chip scale light emitting device package with dome |
US9111464B2 (en) | 2013-06-18 | 2015-08-18 | LuxVue Technology Corporation | LED display with wavelength conversion layer |
USD780704S1 (en) * | 2014-08-27 | 2017-03-07 | Mitsubishi Electric Corporation | Light source module |
USD768584S1 (en) * | 2014-11-13 | 2016-10-11 | Mitsubishi Electric Corporation | Light source module |
CN105047793B (zh) * | 2015-08-20 | 2018-07-06 | 厦门市三安光电科技有限公司 | 发光二极管封装结构的制作方法 |
DE102016112293A1 (de) * | 2016-07-05 | 2018-01-11 | Osram Opto Semiconductors Gmbh | Verfahren zum herstellen eines optoelektronischen bauelements und optoelektronisches bauelement |
CN107845717A (zh) * | 2016-09-21 | 2018-03-27 | 深圳市兆驰节能照明股份有限公司 | Csp光源及其制造方法和制造模具 |
TWI635470B (zh) * | 2017-07-04 | 2018-09-11 | 錼創科技股份有限公司 | 發光模組及顯示裝置 |
DE102018112332A1 (de) * | 2018-05-23 | 2019-11-28 | Osram Opto Semiconductors Gmbh | Bauteil und verfahren zur herstellung eines bauteils |
JP7244771B2 (ja) * | 2020-04-02 | 2023-03-23 | 日亜化学工業株式会社 | 面状光源の製造方法 |
CN115084108A (zh) * | 2022-07-04 | 2022-09-20 | 纳欣科技有限公司 | 发光模组及其制作方法、以及显示面板和电子设备 |
CN115528161A (zh) * | 2022-10-26 | 2022-12-27 | 上海天马微电子有限公司 | 显示面板的制作方法、显示面板及显示装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3844196B2 (ja) | 2001-06-12 | 2006-11-08 | シチズン電子株式会社 | 発光ダイオードの製造方法 |
JP4048783B2 (ja) * | 2002-01-18 | 2008-02-20 | ソニー株式会社 | 電子装置の製造方法 |
JP3962282B2 (ja) * | 2002-05-23 | 2007-08-22 | 松下電器産業株式会社 | 半導体装置の製造方法 |
TW563263B (en) * | 2002-09-27 | 2003-11-21 | United Epitaxy Co Ltd | Surface mounting method for high power light emitting diode |
JP2005079329A (ja) | 2003-08-29 | 2005-03-24 | Stanley Electric Co Ltd | 表面実装型発光ダイオード |
US7915085B2 (en) * | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
JP2006346961A (ja) * | 2005-06-15 | 2006-12-28 | Matsushita Electric Ind Co Ltd | 樹脂膜の形成方法及び光半導体装置の製造方法 |
KR20080083830A (ko) * | 2007-03-13 | 2008-09-19 | 삼성전기주식회사 | Led 패키지 및 그 제조방법 |
JP2009117536A (ja) * | 2007-11-05 | 2009-05-28 | Towa Corp | 樹脂封止発光体及びその製造方法 |
JP5324114B2 (ja) * | 2008-03-27 | 2013-10-23 | リンテック株式会社 | 発光モジュール用シートの製造方法、発光モジュール用シート |
JP5440010B2 (ja) * | 2008-09-09 | 2014-03-12 | 日亜化学工業株式会社 | 光半導体装置及びその製造方法 |
TWI420695B (zh) * | 2008-10-21 | 2013-12-21 | Advanced Optoelectronic Tech | 化合物半導體元件之封裝模組結構及其製造方法 |
KR101025980B1 (ko) * | 2008-11-28 | 2011-03-30 | 삼성엘이디 주식회사 | 질화물계 반도체 발광소자의 제조방법 |
WO2011093454A1 (ja) * | 2010-01-29 | 2011-08-04 | シチズン電子株式会社 | 発光装置の製造方法及び発光装置 |
DE202010008705U1 (de) | 2010-10-04 | 2010-12-30 | Harvatek Corp. | Arrayartiges Multi-Chip-Gehäuse für LEDs |
-
2011
- 2011-12-29 EP EP11815634.8A patent/EP2666193B1/en active Active
- 2011-12-29 KR KR1020137021666A patent/KR101897308B1/ko active IP Right Grant
- 2011-12-29 US US13/993,733 patent/US8907364B2/en active Active
- 2011-12-29 CN CN201180065259.9A patent/CN103443943B/zh active Active
- 2011-12-29 WO PCT/IB2011/056005 patent/WO2012101488A1/en active Application Filing
- 2011-12-29 JP JP2013548898A patent/JP5932835B2/ja active Active
-
2012
- 2012-01-17 TW TW101101821A patent/TWI606615B/zh active
Also Published As
Publication number | Publication date |
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KR101897308B1 (ko) | 2018-09-10 |
KR20140004726A (ko) | 2014-01-13 |
US20130285082A1 (en) | 2013-10-31 |
CN103443943A (zh) | 2013-12-11 |
CN103443943B (zh) | 2017-07-21 |
TWI606615B (zh) | 2017-11-21 |
EP2666193B1 (en) | 2020-07-29 |
EP2666193A1 (en) | 2013-11-27 |
WO2012101488A1 (en) | 2012-08-02 |
JP2014503122A (ja) | 2014-02-06 |
TW201238092A (en) | 2012-09-16 |
US8907364B2 (en) | 2014-12-09 |
WO2012101488A9 (en) | 2013-09-06 |
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