KR101897308B1 - 발광 디바이스를 제조하기 위한 방법 및 그것을 포함하는 구조체 - Google Patents

발광 디바이스를 제조하기 위한 방법 및 그것을 포함하는 구조체 Download PDF

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KR101897308B1
KR101897308B1 KR1020137021666A KR20137021666A KR101897308B1 KR 101897308 B1 KR101897308 B1 KR 101897308B1 KR 1020137021666 A KR1020137021666 A KR 1020137021666A KR 20137021666 A KR20137021666 A KR 20137021666A KR 101897308 B1 KR101897308 B1 KR 101897308B1
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South Korea
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light emitting
film
reflective
emitting elements
reflective structures
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Korean (ko)
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KR20140004726A (ko
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서지 조엘 아르만드 비에르후이젠
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루미리즈 홀딩 비.브이.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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KR1020137021666A 2011-01-17 2011-12-29 발광 디바이스를 제조하기 위한 방법 및 그것을 포함하는 구조체 Active KR101897308B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161433306P 2011-01-17 2011-01-17
US61/433,306 2011-01-17
PCT/IB2011/056005 WO2012101488A1 (en) 2011-01-17 2011-12-29 Led package comprising encapsulation

Publications (2)

Publication Number Publication Date
KR20140004726A KR20140004726A (ko) 2014-01-13
KR101897308B1 true KR101897308B1 (ko) 2018-09-10

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KR1020137021666A Active KR101897308B1 (ko) 2011-01-17 2011-12-29 발광 디바이스를 제조하기 위한 방법 및 그것을 포함하는 구조체

Country Status (7)

Country Link
US (1) US8907364B2 (https=)
EP (1) EP2666193B1 (https=)
JP (1) JP5932835B2 (https=)
KR (1) KR101897308B1 (https=)
CN (1) CN103443943B (https=)
TW (1) TWI606615B (https=)
WO (1) WO2012101488A1 (https=)

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WO2013118076A1 (en) * 2012-02-10 2013-08-15 Koninklijke Philips N.V. Low cost encapsulated light-emitting device
US9484504B2 (en) * 2013-05-14 2016-11-01 Apple Inc. Micro LED with wavelength conversion layer
JP6516190B2 (ja) 2013-05-20 2019-05-22 ルミレッズ ホールディング ベーフェー ドームを有するチップスケール発光デバイスパッケージ
US9111464B2 (en) 2013-06-18 2015-08-18 LuxVue Technology Corporation LED display with wavelength conversion layer
TWD167284S (zh) * 2014-01-14 2015-04-21 隆達電子股份有限公司 導線架料帶之部分
USD780704S1 (en) * 2014-08-27 2017-03-07 Mitsubishi Electric Corporation Light source module
USD768584S1 (en) * 2014-11-13 2016-10-11 Mitsubishi Electric Corporation Light source module
CN105047793B (zh) * 2015-08-20 2018-07-06 厦门市三安光电科技有限公司 发光二极管封装结构的制作方法
DE102016112293A1 (de) * 2016-07-05 2018-01-11 Osram Opto Semiconductors Gmbh Verfahren zum herstellen eines optoelektronischen bauelements und optoelektronisches bauelement
CN107845717A (zh) * 2016-09-21 2018-03-27 深圳市兆驰节能照明股份有限公司 Csp光源及其制造方法和制造模具
TWI635470B (zh) * 2017-07-04 2018-09-11 PlayNitride Inc. 發光模組及顯示裝置
DE102018112332A1 (de) * 2018-05-23 2019-11-28 Osram Opto Semiconductors Gmbh Bauteil und verfahren zur herstellung eines bauteils
KR102739657B1 (ko) * 2019-05-23 2024-12-09 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자패키지 및 광원장치
JP7244771B2 (ja) * 2020-04-02 2023-03-23 日亜化学工業株式会社 面状光源の製造方法
JP2023179115A (ja) * 2022-06-07 2023-12-19 株式会社ジャパンディスプレイ 表示装置
CN115084108A (zh) * 2022-07-04 2022-09-20 纳欣科技有限公司 发光模组及其制作方法、以及显示面板和电子设备
CN115528161A (zh) * 2022-10-26 2022-12-27 上海天马微电子有限公司 显示面板的制作方法、显示面板及显示装置

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JP2010239105A (ja) * 2008-09-09 2010-10-21 Nichia Corp 光半導体装置及びその製造方法

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JP3844196B2 (ja) 2001-06-12 2006-11-08 シチズン電子株式会社 発光ダイオードの製造方法
JP4048783B2 (ja) * 2002-01-18 2008-02-20 ソニー株式会社 電子装置の製造方法
JP3962282B2 (ja) * 2002-05-23 2007-08-22 松下電器産業株式会社 半導体装置の製造方法
TW563263B (en) * 2002-09-27 2003-11-21 United Epitaxy Co Ltd Surface mounting method for high power light emitting diode
JP2005079329A (ja) 2003-08-29 2005-03-24 Stanley Electric Co Ltd 表面実装型発光ダイオード
US7915085B2 (en) * 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
JP2006346961A (ja) * 2005-06-15 2006-12-28 Matsushita Electric Ind Co Ltd 樹脂膜の形成方法及び光半導体装置の製造方法
KR20080083830A (ko) * 2007-03-13 2008-09-19 삼성전기주식회사 Ｌｅｄ 패키지 및 그 제조방법
JP2009117536A (ja) * 2007-11-05 2009-05-28 Towa Corp 樹脂封止発光体及びその製造方法
JP5324114B2 (ja) * 2008-03-27 2013-10-23 リンテック株式会社 発光モジュール用シートの製造方法、発光モジュール用シート
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KR101025980B1 (ko) * 2008-11-28 2011-03-30 삼성엘이디 주식회사 질화물계 반도체 발광소자의 제조방법
CN102884645B (zh) * 2010-01-29 2015-05-27 西铁城电子株式会社 发光装置的制造方法以及发光装置
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Also Published As

Publication number Publication date
TW201238092A (en) 2012-09-16
EP2666193A1 (en) 2013-11-27
EP2666193B1 (en) 2020-07-29
WO2012101488A9 (en) 2013-09-06
KR20140004726A (ko) 2014-01-13
JP2014503122A (ja) 2014-02-06
TWI606615B (zh) 2017-11-21
CN103443943A (zh) 2013-12-11
CN103443943B (zh) 2017-07-21
US20130285082A1 (en) 2013-10-31
JP5932835B2 (ja) 2016-06-08
WO2012101488A1 (en) 2012-08-02
US8907364B2 (en) 2014-12-09

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