TWI604266B - Substrate with multilayer reflective film, reflective reticle substrate and reflective reticle, photomask substrate and reticle, method for manufacturing substrate with multilayer reflective film, method for manufacturing reflective reticle substrate, and manufacture of reticle substrate method - Google Patents

Substrate with multilayer reflective film, reflective reticle substrate and reflective reticle, photomask substrate and reticle, method for manufacturing substrate with multilayer reflective film, method for manufacturing reflective reticle substrate, and manufacture of reticle substrate method Download PDF

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Publication number
TWI604266B
TWI604266B TW102104989A TW102104989A TWI604266B TW I604266 B TWI604266 B TW I604266B TW 102104989 A TW102104989 A TW 102104989A TW 102104989 A TW102104989 A TW 102104989A TW I604266 B TWI604266 B TW I604266B
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TW
Taiwan
Prior art keywords
mark
substrate
reference mark
defect
film
Prior art date
Application number
TW102104989A
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English (en)
Chinese (zh)
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TW201344342A (zh
Inventor
笑喜勉
濱本和宏
Original Assignee
Ｈｏｙａ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by Ｈｏｙａ股份有限公司 filed Critical Ｈｏｙａ股份有限公司
Publication of TW201344342A publication Critical patent/TW201344342A/zh
Application granted granted Critical
Publication of TWI604266B publication Critical patent/TWI604266B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW102104989A 2012-02-10 2013-02-07 Substrate with multilayer reflective film, reflective reticle substrate and reflective reticle, photomask substrate and reticle, method for manufacturing substrate with multilayer reflective film, method for manufacturing reflective reticle substrate, and manufacture of reticle substrate method TWI604266B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012027638 2012-02-10
JP2012289264A JP6460617B2 (ja) 2012-02-10 2012-12-30 反射型マスクブランク、反射型マスクの製造方法、及び反射型マスクブランクの製造方法

Publications (2)

Publication Number Publication Date
TW201344342A TW201344342A (zh) 2013-11-01
TWI604266B true TWI604266B (zh) 2017-11-01

Family

ID=48947479

Family Applications (2)

Application Number Title Priority Date Filing Date
TW102104989A TWI604266B (zh) 2012-02-10 2013-02-07 Substrate with multilayer reflective film, reflective reticle substrate and reflective reticle, photomask substrate and reticle, method for manufacturing substrate with multilayer reflective film, method for manufacturing reflective reticle substrate, and manufacture of reticle substrate method
TW106129912A TWI651587B (zh) 2012-02-10 2013-02-07 具多層反射膜之基板之製造方法、反射型光罩基底之製造方法、及反射型光罩之製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW106129912A TWI651587B (zh) 2012-02-10 2013-02-07 具多層反射膜之基板之製造方法、反射型光罩基底之製造方法、及反射型光罩之製造方法

Country Status (5)

Country Link
US (2) US9423685B2 (https=)
JP (1) JP6460617B2 (https=)
KR (2) KR102304805B1 (https=)
TW (2) TWI604266B (https=)
WO (1) WO2013118716A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI710850B (zh) * 2018-03-23 2020-11-21 日商Ｈｏｙａ股份有限公司 光罩、光罩基底、光罩之製造方法、及電子元件之製造方法

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6561099B2 (ja) * 2012-02-10 2019-08-14 Hoya株式会社 多層反射膜付き基板の製造方法、反射型マスクブランクの製造方法及び反射型マスクの製造方法
WO2014050891A1 (ja) * 2012-09-28 2014-04-03 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法、ならびにｅｕｖリソグラフィ用反射型マスクおよびその製造方法
WO2014129527A1 (ja) * 2013-02-22 2014-08-28 Hoya株式会社 反射型マスクブランクの製造方法、及び反射型マスクの製造方法
DE102013211403B4 (de) * 2013-06-18 2020-12-17 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zum automatisierten Bestimmen eines Referenzpunktes einer Ausrichtungsmarkierung auf einem Substrat einer photolithographischen Maske
KR101567057B1 (ko) * 2013-11-15 2015-11-09 주식회사 에스앤에스텍 극자외선용 블랭크 마스크 및 이를 이용한 포토마스크
CA3180239A1 (en) 2014-09-08 2016-03-17 Becton, Dickinson And Company Enhanced platen for pharmaceutical compounding
JP6713251B2 (ja) * 2015-03-30 2020-06-24 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びにそれらの製造方法
DE102015210650A1 (de) * 2015-06-10 2016-12-15 E.G.O. Elektro-Gerätebau GmbH Induktionsheizeinrichtung und Induktionskochfeld mit einer solchen Induktionsheizeinrichtung
JP6517660B2 (ja) * 2015-10-20 2019-05-22 株式会社東芝 マスク基板及びマスク基板の製造方法
KR102646681B1 (ko) * 2016-03-31 2024-03-12 호야 가부시키가이샤 반사형 마스크 블랭크의 제조 방법, 반사형 마스크의 제조 방법 및 반도체 장치의 제조 방법
TWI712849B (zh) * 2017-02-17 2020-12-11 聯華電子股份有限公司 一種極紫外線光罩
SG11201911415VA (en) * 2017-06-21 2020-01-30 Hoya Corp Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device
US10795270B2 (en) * 2017-08-25 2020-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of defect inspection
TWI667530B (zh) * 2017-09-28 2019-08-01 日商紐富來科技股份有限公司 Inspection method and inspection device
KR102374206B1 (ko) 2017-12-05 2022-03-14 삼성전자주식회사 반도체 장치 제조 방법
TW202532958A (zh) 2018-05-25 2025-08-16 日商Ｈｏｙａ股份有限公司 反射型光罩基底、反射型光罩、以及反射型光罩與半導體裝置之製造方法
KR102567180B1 (ko) * 2020-04-21 2023-08-16 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크
US20210333717A1 (en) * 2020-04-23 2021-10-28 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet mask and method of manufacturing the same
JP7577486B2 (ja) * 2020-09-10 2024-11-05 信越化学工業株式会社 Ｅｕｖマスクブランク用多層反射膜付き基板、その製造方法及びｅｕｖマスクブランク
US20220308438A1 (en) * 2021-03-24 2022-09-29 Hoya Corporation Method for manufacturing multilayered-reflective-film-provided substrate, reflective mask blank and method for manufacturing the same, and method for manufacturing reflective mask
CN113540038B (zh) * 2021-06-30 2024-12-31 深圳莱宝高科技股份有限公司 对位标记结构、基板、掩膜板、基板与掩膜板的对位方法
JP7567742B2 (ja) * 2021-10-01 2024-10-16 信越化学工業株式会社 反射型マスクブランク用膜付き基板、反射型マスクブランク、及び反射型マスクの製造方法
KR102495225B1 (ko) * 2021-12-15 2023-02-06 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
US20240053668A1 (en) * 2022-08-09 2024-02-15 Taiwan Semiconductor Manufacturing Company Ltd. Photomask and method of manufacturing the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003248299A (ja) 2002-02-26 2003-09-05 Toshiba Corp マスク基板およびその製造方法
JP2004170948A (ja) * 2002-10-30 2004-06-17 Nikon Corp パターン転写用マスク、マスク作製方法及び露光方法
JP2008129914A (ja) 2006-11-22 2008-06-05 Toshiba Corp ソフトウェア検証用モデル生成装置、及びソフトウェア検証用モデル生成方法
WO2008129914A1 (ja) * 2007-04-17 2008-10-30 Asahi Glass Company, Limited Ｅｕｖマスクブランク
JP2009251412A (ja) * 2008-04-09 2009-10-29 Renesas Technology Corp マスクブランク検査装置および方法、反射型露光マスクの製造方法ならびに半導体集積回路の製造方法
KR20100037799A (ko) * 2008-10-02 2010-04-12 삼성전자주식회사 극자외선 블랭크 마스크 제작 시 기준 마크를 삽입하고, 마스크 패턴 전 기준 마크를 오픈함으로써, 마스크 패턴 시결함을 피해가는 반사형 포토마스크 제작방법
KR101569896B1 (ko) * 2009-03-16 2015-11-17 삼성전자주식회사 반사형 포토 마스크 및 그 제조 방법
KR101650370B1 (ko) * 2009-03-26 2016-08-23 호야 가부시키가이샤 반사형 마스크용 다층 반사막 부착 기판 및 반사형 마스크블랭크 그리고 그것들의 제조방법
JP2010272553A (ja) * 2009-05-19 2010-12-02 Renesas Electronics Corp マスクブランクの欠陥検査装置および欠陥検査方法、ならびに半導体装置の製造方法
TWI494682B (zh) * 2009-11-18 2015-08-01 Ｈｏｙａ股份有限公司 基板之再生方法、光罩基底之製造方法、附多層反射膜基板之製造方法及反射型光罩基底之製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI710850B (zh) * 2018-03-23 2020-11-21 日商Ｈｏｙａ股份有限公司 光罩、光罩基底、光罩之製造方法、及電子元件之製造方法

Also Published As

Publication number Publication date
TW201344342A (zh) 2013-11-01
JP2013179270A (ja) 2013-09-09
KR102304805B1 (ko) 2021-09-24
US10126641B2 (en) 2018-11-13
KR20210010669A (ko) 2021-01-27
TWI651587B (zh) 2019-02-21
KR102207990B1 (ko) 2021-01-26
JP6460617B2 (ja) 2019-01-30
US20140302429A1 (en) 2014-10-09
US9423685B2 (en) 2016-08-23
TW201812440A (zh) 2018-04-01
WO2013118716A1 (ja) 2013-08-15
KR20140121812A (ko) 2014-10-16
US20170010525A1 (en) 2017-01-12

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