JP6460617B2 - 反射型マスクブランク、反射型マスクの製造方法、及び反射型マスクブランクの製造方法 - Google Patents

反射型マスクブランク、反射型マスクの製造方法、及び反射型マスクブランクの製造方法 Download PDF

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Publication number
JP6460617B2
JP6460617B2 JP2012289264A JP2012289264A JP6460617B2 JP 6460617 B2 JP6460617 B2 JP 6460617B2 JP 2012289264 A JP2012289264 A JP 2012289264A JP 2012289264 A JP2012289264 A JP 2012289264A JP 6460617 B2 JP6460617 B2 JP 6460617B2
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JP
Japan
Prior art keywords
reference mark
mark
mask blank
defect
film
Prior art date
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JP2012289264A
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English (en)
Japanese (ja)
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JP2013179270A5 (https=
JP2013179270A (ja
Inventor
笑喜　勉
勉 笑喜
和宏 浜本
和宏 浜本
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Hoya Corp
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Hoya Corp
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Publication date
Priority to JP2012289264A priority Critical patent/JP6460617B2/ja
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to KR1020217002000A priority patent/KR102304805B1/ko
Priority to US14/355,477 priority patent/US9423685B2/en
Priority to PCT/JP2013/052599 priority patent/WO2013118716A1/ja
Priority to KR1020147011683A priority patent/KR102207990B1/ko
Priority to TW106129912A priority patent/TWI651587B/zh
Priority to TW102104989A priority patent/TWI604266B/zh
Publication of JP2013179270A publication Critical patent/JP2013179270A/ja
Publication of JP2013179270A5 publication Critical patent/JP2013179270A5/ja
Priority to US15/216,072 priority patent/US10126641B2/en
Application granted granted Critical
Publication of JP6460617B2 publication Critical patent/JP6460617B2/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2012289264A 2012-02-10 2012-12-30 反射型マスクブランク、反射型マスクの製造方法、及び反射型マスクブランクの製造方法 Active JP6460617B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2012289264A JP6460617B2 (ja) 2012-02-10 2012-12-30 反射型マスクブランク、反射型マスクの製造方法、及び反射型マスクブランクの製造方法
US14/355,477 US9423685B2 (en) 2012-02-10 2013-02-05 Multilayer reflective film formed substrate, reflective mask blank, mask blank, methods of manufacturing the same, reflective mask, and mask
PCT/JP2013/052599 WO2013118716A1 (ja) 2012-02-10 2013-02-05 多層反射膜付き基板、反射型マスクブランク、マスクブランク及びそれらの製造方法、反射型マスク並びにマスク
KR1020147011683A KR102207990B1 (ko) 2012-02-10 2013-02-05 다층 반사막 부착 기판, 반사형 마스크 블랭크, 마스크 블랭크 및 그들의 제조방법, 반사형 마스크 그리고 마스크
KR1020217002000A KR102304805B1 (ko) 2012-02-10 2013-02-05 다층 반사막 부착 기판, 반사형 마스크 블랭크, 마스크 블랭크 및 그들의 제조방법, 반사형 마스크 그리고 마스크
TW106129912A TWI651587B (zh) 2012-02-10 2013-02-07 具多層反射膜之基板之製造方法、反射型光罩基底之製造方法、及反射型光罩之製造方法
TW102104989A TWI604266B (zh) 2012-02-10 2013-02-07 Substrate with multilayer reflective film, reflective reticle substrate and reflective reticle, photomask substrate and reticle, method for manufacturing substrate with multilayer reflective film, method for manufacturing reflective reticle substrate, and manufacture of reticle substrate method
US15/216,072 US10126641B2 (en) 2012-02-10 2016-07-21 Multilayer reflective film formed substrate, reflective mask blank, mask blank, methods of manufacturing the same, reflective mask, and mask

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012027638 2012-02-10
JP2012027638 2012-02-10
JP2012289264A JP6460617B2 (ja) 2012-02-10 2012-12-30 反射型マスクブランク、反射型マスクの製造方法、及び反射型マスクブランクの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017194485A Division JP6561099B2 (ja) 2012-02-10 2017-10-04 多層反射膜付き基板の製造方法、反射型マスクブランクの製造方法及び反射型マスクの製造方法

Publications (3)

Publication Number Publication Date
JP2013179270A JP2013179270A (ja) 2013-09-09
JP2013179270A5 JP2013179270A5 (https=) 2016-03-03
JP6460617B2 true JP6460617B2 (ja) 2019-01-30

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JP2012289264A Active JP6460617B2 (ja) 2012-02-10 2012-12-30 反射型マスクブランク、反射型マスクの製造方法、及び反射型マスクブランクの製造方法

Country Status (5)

Country Link
US (2) US9423685B2 (https=)
JP (1) JP6460617B2 (https=)
KR (2) KR102304805B1 (https=)
TW (2) TWI651587B (https=)
WO (1) WO2013118716A1 (https=)

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KR102219307B1 (ko) 2013-02-22 2021-02-23 호야 가부시키가이샤 반사형 마스크블랭크의 제조방법, 및 반사형 마스크의 제조방법
DE102013211403B4 (de) * 2013-06-18 2020-12-17 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zum automatisierten Bestimmen eines Referenzpunktes einer Ausrichtungsmarkierung auf einem Substrat einer photolithographischen Maske
KR101567057B1 (ko) * 2013-11-15 2015-11-09 주식회사 에스앤에스텍 극자외선용 블랭크 마스크 및 이를 이용한 포토마스크
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JP6713251B2 (ja) * 2015-03-30 2020-06-24 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びにそれらの製造方法
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JP6517660B2 (ja) * 2015-10-20 2019-05-22 株式会社東芝 マスク基板及びマスク基板の製造方法
US11048159B2 (en) * 2016-03-31 2021-06-29 Hoya Corporation Method for manufacturing reflective mask blank, reflective mask blank, method for manufacturing reflective mask, reflective mask, and method for manufacturing semiconductor device
TWI712849B (zh) * 2017-02-17 2020-12-11 聯華電子股份有限公司 一種極紫外線光罩
KR102653352B1 (ko) * 2017-06-21 2024-04-02 호야 가부시키가이샤 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조 방법
US10795270B2 (en) 2017-08-25 2020-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of defect inspection
TWI667530B (zh) * 2017-09-28 2019-08-01 日商紐富來科技股份有限公司 Inspection method and inspection device
KR102374206B1 (ko) 2017-12-05 2022-03-14 삼성전자주식회사 반도체 장치 제조 방법
TWI710850B (zh) * 2018-03-23 2020-11-21 日商Ｈｏｙａ股份有限公司 光罩、光罩基底、光罩之製造方法、及電子元件之製造方法
KR102937232B1 (ko) 2018-05-25 2026-03-10 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 그리고, 반사형 마스크 및 반도체 장치의 제조 방법
KR102567180B1 (ko) * 2020-04-21 2023-08-16 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크
US20210333717A1 (en) * 2020-04-23 2021-10-28 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet mask and method of manufacturing the same
JP7577486B2 (ja) * 2020-09-10 2024-11-05 信越化学工業株式会社 Ｅｕｖマスクブランク用多層反射膜付き基板、その製造方法及びｅｕｖマスクブランク
US20220308438A1 (en) * 2021-03-24 2022-09-29 Hoya Corporation Method for manufacturing multilayered-reflective-film-provided substrate, reflective mask blank and method for manufacturing the same, and method for manufacturing reflective mask
CN113540038B (zh) * 2021-06-30 2024-12-31 深圳莱宝高科技股份有限公司 对位标记结构、基板、掩膜板、基板与掩膜板的对位方法
JP7567742B2 (ja) * 2021-10-01 2024-10-16 信越化学工業株式会社 反射型マスクブランク用膜付き基板、反射型マスクブランク、及び反射型マスクの製造方法
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Also Published As

Publication number Publication date
KR102304805B1 (ko) 2021-09-24
KR102207990B1 (ko) 2021-01-26
KR20210010669A (ko) 2021-01-27
KR20140121812A (ko) 2014-10-16
JP2013179270A (ja) 2013-09-09
US10126641B2 (en) 2018-11-13
TWI651587B (zh) 2019-02-21
TWI604266B (zh) 2017-11-01
US9423685B2 (en) 2016-08-23
US20170010525A1 (en) 2017-01-12
TW201812440A (zh) 2018-04-01
WO2013118716A1 (ja) 2013-08-15
US20140302429A1 (en) 2014-10-09
TW201344342A (zh) 2013-11-01

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