KR102304805B1 - 다층 반사막 부착 기판, 반사형 마스크 블랭크, 마스크 블랭크 및 그들의 제조방법, 반사형 마스크 그리고 마스크 - Google Patents

다층 반사막 부착 기판, 반사형 마스크 블랭크, 마스크 블랭크 및 그들의 제조방법, 반사형 마스크 그리고 마스크 Download PDF

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KR102304805B1
KR102304805B1 KR1020217002000A KR20217002000A KR102304805B1 KR 102304805 B1 KR102304805 B1 KR 102304805B1 KR 1020217002000 A KR1020217002000 A KR 1020217002000A KR 20217002000 A KR20217002000 A KR 20217002000A KR 102304805 B1 KR102304805 B1 KR 102304805B1
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South Korea
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reference mark
film
mark
defect
substrate
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KR20210010669A (ko
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츠토무 쇼키
가즈히로 하마모토
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호야 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H01L21/0274—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020217002000A 2012-02-10 2013-02-05 다층 반사막 부착 기판, 반사형 마스크 블랭크, 마스크 블랭크 및 그들의 제조방법, 반사형 마스크 그리고 마스크 Active KR102304805B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JPJP-P-2012-027638 2012-02-10
JP2012027638 2012-02-10
JPJP-P-2012-289264 2012-12-30
JP2012289264A JP6460617B2 (ja) 2012-02-10 2012-12-30 反射型マスクブランク、反射型マスクの製造方法、及び反射型マスクブランクの製造方法
PCT/JP2013/052599 WO2013118716A1 (ja) 2012-02-10 2013-02-05 多層反射膜付き基板、反射型マスクブランク、マスクブランク及びそれらの製造方法、反射型マスク並びにマスク
KR1020147011683A KR102207990B1 (ko) 2012-02-10 2013-02-05 다층 반사막 부착 기판, 반사형 마스크 블랭크, 마스크 블랭크 및 그들의 제조방법, 반사형 마스크 그리고 마스크

Related Parent Applications (1)

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KR1020147011683A Division KR102207990B1 (ko) 2012-02-10 2013-02-05 다층 반사막 부착 기판, 반사형 마스크 블랭크, 마스크 블랭크 및 그들의 제조방법, 반사형 마스크 그리고 마스크

Publications (2)

Publication Number Publication Date
KR20210010669A KR20210010669A (ko) 2021-01-27
KR102304805B1 true KR102304805B1 (ko) 2021-09-24

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KR1020217002000A Active KR102304805B1 (ko) 2012-02-10 2013-02-05 다층 반사막 부착 기판, 반사형 마스크 블랭크, 마스크 블랭크 및 그들의 제조방법, 반사형 마스크 그리고 마스크
KR1020147011683A Active KR102207990B1 (ko) 2012-02-10 2013-02-05 다층 반사막 부착 기판, 반사형 마스크 블랭크, 마스크 블랭크 및 그들의 제조방법, 반사형 마스크 그리고 마스크

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KR1020147011683A Active KR102207990B1 (ko) 2012-02-10 2013-02-05 다층 반사막 부착 기판, 반사형 마스크 블랭크, 마스크 블랭크 및 그들의 제조방법, 반사형 마스크 그리고 마스크

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US (2) US9423685B2 (https=)
JP (1) JP6460617B2 (https=)
KR (2) KR102304805B1 (https=)
TW (2) TWI651587B (https=)
WO (1) WO2013118716A1 (https=)

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KR20150058254A (ko) * 2012-09-28 2015-05-28 아사히 가라스 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크 및 그 제조 방법, 그리고 euv 리소그래피용 반사형 마스크 및 그 제조 방법
KR102219307B1 (ko) 2013-02-22 2021-02-23 호야 가부시키가이샤 반사형 마스크블랭크의 제조방법, 및 반사형 마스크의 제조방법
DE102013211403B4 (de) * 2013-06-18 2020-12-17 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zum automatisierten Bestimmen eines Referenzpunktes einer Ausrichtungsmarkierung auf einem Substrat einer photolithographischen Maske
KR101567057B1 (ko) * 2013-11-15 2015-11-09 주식회사 에스앤에스텍 극자외선용 블랭크 마스크 및 이를 이용한 포토마스크
US10679342B2 (en) * 2014-09-08 2020-06-09 Becton, Dickinson And Company Aerodynamically streamlined enclosure for input devices of a medication preparation system
JP6713251B2 (ja) * 2015-03-30 2020-06-24 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びにそれらの製造方法
DE102015210650A1 (de) * 2015-06-10 2016-12-15 E.G.O. Elektro-Gerätebau GmbH Induktionsheizeinrichtung und Induktionskochfeld mit einer solchen Induktionsheizeinrichtung
JP6517660B2 (ja) * 2015-10-20 2019-05-22 株式会社東芝 マスク基板及びマスク基板の製造方法
US11048159B2 (en) * 2016-03-31 2021-06-29 Hoya Corporation Method for manufacturing reflective mask blank, reflective mask blank, method for manufacturing reflective mask, reflective mask, and method for manufacturing semiconductor device
TWI712849B (zh) * 2017-02-17 2020-12-11 聯華電子股份有限公司 一種極紫外線光罩
KR102653352B1 (ko) * 2017-06-21 2024-04-02 호야 가부시키가이샤 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조 방법
US10795270B2 (en) 2017-08-25 2020-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of defect inspection
TWI667530B (zh) * 2017-09-28 2019-08-01 日商紐富來科技股份有限公司 Inspection method and inspection device
KR102374206B1 (ko) 2017-12-05 2022-03-14 삼성전자주식회사 반도체 장치 제조 방법
TWI710850B (zh) * 2018-03-23 2020-11-21 日商Ｈｏｙａ股份有限公司 光罩、光罩基底、光罩之製造方法、及電子元件之製造方法
KR102937232B1 (ko) 2018-05-25 2026-03-10 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 그리고, 반사형 마스크 및 반도체 장치의 제조 방법
KR102567180B1 (ko) * 2020-04-21 2023-08-16 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크
US20210333717A1 (en) * 2020-04-23 2021-10-28 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet mask and method of manufacturing the same
JP7577486B2 (ja) * 2020-09-10 2024-11-05 信越化学工業株式会社 Ｅｕｖマスクブランク用多層反射膜付き基板、その製造方法及びｅｕｖマスクブランク
US20220308438A1 (en) * 2021-03-24 2022-09-29 Hoya Corporation Method for manufacturing multilayered-reflective-film-provided substrate, reflective mask blank and method for manufacturing the same, and method for manufacturing reflective mask
CN113540038B (zh) * 2021-06-30 2024-12-31 深圳莱宝高科技股份有限公司 对位标记结构、基板、掩膜板、基板与掩膜板的对位方法
JP7567742B2 (ja) * 2021-10-01 2024-10-16 信越化学工業株式会社 反射型マスクブランク用膜付き基板、反射型マスクブランク、及び反射型マスクの製造方法
KR102495225B1 (ko) * 2021-12-15 2023-02-06 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
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Also Published As

Publication number Publication date
KR102207990B1 (ko) 2021-01-26
JP6460617B2 (ja) 2019-01-30
KR20210010669A (ko) 2021-01-27
KR20140121812A (ko) 2014-10-16
JP2013179270A (ja) 2013-09-09
US10126641B2 (en) 2018-11-13
TWI651587B (zh) 2019-02-21
TWI604266B (zh) 2017-11-01
US9423685B2 (en) 2016-08-23
US20170010525A1 (en) 2017-01-12
TW201812440A (zh) 2018-04-01
WO2013118716A1 (ja) 2013-08-15
US20140302429A1 (en) 2014-10-09
TW201344342A (zh) 2013-11-01

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