TWI602280B - 半導體裝置及其製造方法 - Google Patents

半導體裝置及其製造方法 Download PDF

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TWI602280B
TWI602280B TW105121086A TW105121086A TWI602280B TW I602280 B TWI602280 B TW I602280B TW 105121086 A TW105121086 A TW 105121086A TW 105121086 A TW105121086 A TW 105121086A TW I602280 B TWI602280 B TW I602280B
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transistor
reference voltage
layer
conductivity type
semiconductor device
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TW105121086A
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TW201719861A (zh
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李陳毅
黃士芬
王培倫
何大椿
鐘于彰
莫漢曼德 亞西克
亞歷山大 克爾尼斯基
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台灣積體電路製造股份有限公司
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Description

半導體裝置及其製造方法
本揭露涉及一種半導體裝置及其製造方法，特別是涉及一種場效應電晶體裝置及其製造方法。
一種場效應電晶體(FET)包括一閾值電壓。閾值電壓是柵極對源極的最小電壓差，其可以建立源極和汲極端之間的導電路徑。
在FET中有柵極(或柵極結構)。柵極經由施加電壓在通道上而控制傳導路徑。當電壓施加至柵極，電流會流過通道。當電壓停止施加到柵極，電流即停止流過通道。開通FET的電壓即為閾值電壓。具有不同閾值電壓的場效應電晶體可以經組合以產生用於不同應用的參考電壓。
根據一個實施例，本揭露提供一種半導體裝置。該半導體裝置包含第一電晶體，經配置以具有第一閾值電壓值，其中該第一電晶體包括第一柵極結構，該第一柵極結構，包括第一組件，其具有第一導電類型。該半導體裝置還包含第二電晶體，經配置以具有與該第一閾值電壓值不同的第二閾值電壓值，該第二電晶體包括第二柵 極結構，該第二柵極結構包括第二組件，其具有該第一導電類型。該半導體裝置另包含至少一個附加組件，設置在該第二組件上方，其中該至少一個附加組件具有與第一導電類型相反的第二導電類型，並且該第一電晶體和該第二電晶體經耦接，使得該至少一個附加組件的數目由第一閾值電壓值與第二閾值電壓值之間所需的電壓差決定。
根據另一個實施例，本揭露提供一種半導體裝置。該半導體裝置包含第一參考電壓電路，其包括：第一電晶體，經配置以包括第一柵極結構，其包含具有第一導電類型的第一層；第二電晶體，經配置以具有與該第一電晶體不同的閾值電壓值，該第二電晶體包括第二柵極結構，其包含具有該第一導電類型的第二層；以及第三層，設置在該第二層上方，該第三層具有與該第一導電類型相反的第二導電類型。該第一電晶體和該第二電晶體經耦接而為該半導體裝置的第一非參考電路提供第一參考電壓。該半導體裝置還包含第二參考電壓電路，其包括：第三電晶體，經配置以包括第三柵極結構，其包含具有該第一導電類型的第四層；第四電晶體，經配置以具有不同於該第三電晶體的閾值電壓值，該第四電晶體包括第四柵極結構，其包含具有該第一導電類型的第五層；以及第六層，設置在該第五層上方，該第六層包括與該第一導電類型相反的該第二導電類型。該第三電晶體和第四電晶體經耦接而為該半導體裝置的第二非參考電路提供第二參考電壓，該第二參考電壓與該第一參考電壓不同。
根據另一個實施例，本揭露提供一種製造半導體裝置的方法。該方法包括接收基板；在該基板上形成多個參考電壓電路，其中該些多個參考電壓電路提供不同參考電壓；以及在該基板上形成多個非參考電路，其中該些多個參考電壓電路與該些多個非參考電路同時形成。
15‧‧‧柵極隔離層
17‧‧‧柵極介電層
19‧‧‧柵極填充層
20‧‧‧第一柵極金屬
21‧‧‧第二柵極金屬
28‧‧‧氮化物層
29‧‧‧介電層(ILD)
30‧‧‧基礎金屬柵極層
31、32、33‧‧‧翻轉金屬柵極層
35‧‧‧半導體基板
39‧‧‧導電層
40‧‧‧截面圖
100‧‧‧半導體裝置
700、800‧‧‧電晶體
80x、801、802‧‧‧電晶體
M1、M2‧‧‧電晶體
Vref-1、Vref-2、Vref-3、Vref-N‧‧‧參考電壓電路
Non-Ref-1、Non-Ref-2、Non-Ref-3、Non-Ref-M‧‧‧非參考電壓電路
當閱讀隨附的附圖時，從以下詳細的描述可以最清楚地理解本發明的各個方面。需要強調的是，根據本行業的標準做法，各個特徵並非按比例繪製。事實上，各個特徵的尺寸可以任意增大或減小以便進行清楚的討論。
圖1是根據本揭露一些實施例的半導體裝置的上視圖。
圖2是圖1所示半導體裝置的示例性參考電壓電路的電路圖。
圖3A至圖3C是根據本揭露一些實施例的半導體裝置截面圖。
圖4是根據本揭露一些實施例的用於製造半導體裝置方法的操作流程。
圖5至10是根據本揭露一些實施例的用於製造半導體裝置方法的步驟截面圖。
圖11至13是根據本揭露一些實施例的用於製造半導體裝置方法的步驟截面圖。
如下揭露提供了很多不同的實施例或示例，用於實施所提供的主題的不同特徵。如下描述了器件和設置的具體示例，以簡化本發明。當然，它們僅僅是示例，並不是旨在限制本發明。例如，以下描述中在第二特徵之上或在第二特徵上形成第一特徵可以包括形成直接接觸的第一特徵和第二特徵的實施例，還可以包括在第一特徵和第二特徵之間可以形成附加特徵從而使得第一特徵和第二特徵可以不直接接觸的實施例。此外，本揭露可以在各個示例中重複使用符號和/或字母。這種重複使用用於簡化和清楚的目的，其本身並不表明該的各個實施例和/或配置之間的關係。
而且，空間關係術語，例如“之下”、“下方”、“下面”、“之上”、 “上方”等，在此用於簡化描述附圖所示的一個單元或特徵對另一個單元或特徵的關係。除了附圖中描寫的方向，空間關係術語旨在包含使用或步驟的裝置的不同方向。裝置可以以其他方式定向(旋轉90度或者在其他方向)，並可以據此同樣地解釋本文所使用的空間關係描述語。
一種場效應電晶體(FET)，如正通道金屬氧化物半導體場效應電晶體(PMOS)，負通道金屬氧化物半導體場效應電晶體(NMOS)或鰭式電晶體(FinFET)元件可包括一個閾值電壓。閾值電壓是柵極對源極最小電壓差，可以建立源極和汲極端之間的導電路徑。導電路徑可以是一個位於通道區中的導電通道。
在n通道增強模式元件，如NMOS，需要柵極-源極間的正值電壓以建立導電通路。一個正電壓吸引n通道增強型裝置主體內自由流動的電子朝向柵極，以形成導電通道。電荷載子如電子被吸引至柵極附近以對抗加到主體內的摻雜離子。這形成無移動載子的區域，稱作空乏區，這種情況出現時柵極上的正電壓便是FET的閾值電壓。柵極-源極間電壓的增大吸引了更多的電子朝著柵極。然後柵極能夠建立從源極到汲極的導電通道；這個過程被稱為反轉。
當柵極電壓低於閾值電壓，例如場效應電晶體的電晶體被切斷並且沒有電流從汲極流到電晶體的源極。當柵極電壓高於閾值電壓時，電晶體導通。在介面處的通道有許多電子，形成一個低電阻的通道，其中電荷可以從汲極流到源極。對於上述顯著的閾值電壓，這種情況被稱為強反轉。對於剛剛超過閾值電壓的電壓，這種情況被稱為弱反轉。
具有不同閾值電壓的電晶體可以耦接在一起，像一個參考電壓電路，使得不同閾值電壓之間的電壓差可以是一個參考電壓。
在許多應用中，精確和穩定的參考電壓廣泛用於數位和類比電 路，例如類比-數位(A/D)和數位類比(D/A)轉換器，穩壓器，DRAM/快閃存儲器和其他通信設備。對於面積的減少，低功耗和對電源電壓和溫度低靈敏度的發展正在增加。
參考電壓可以藉由一個相同類型(除了其柵極為相反摻雜類型)的電晶體對來生成。在相同的汲極電流，電壓差可以接近矽能帶隙。電路可以包括正的或負的參考電壓。
降低參考電壓值可以幫助降低在參考電壓電路中的功耗。相反地，增加參考電壓值，可以降低來自於供應電壓或溫度變化產生的雜訊所導致的電壓變異敏感度。
圖1顯示包括多個參考電壓電路和非參考電壓電路的半導體裝置100的上視圖。半導體裝置100包括N個參考電壓電路。例如，參考電壓電路被繪示為Vref-1至Vref-N。半導體裝置100可以包括M個非參考電壓電路。例如，該非參考電壓電路被繪示為Non-Ref-1到Non-Ref-M。在一些實施例中，數量N等於數量M。在一些實施例中，每一個參考電壓電路包括不同於另一參考電壓電路的參考電壓。每個參考電壓電路，為至少一個非參考電壓電路提供至少一參考電壓。
在本揭露中，半導體裝置100具有至少兩個不同的參考電壓(即，兩個不同類型的參考電壓電路)，其被設計用於非參考電壓電路。然而，不同類型的參考電壓電路可藉由與形成非參考電壓電路相同或部分步驟來形成，無需額外的光罩或步驟。藉由用於非參考電壓電路的步驟的不同組合，設計人員可以分配幾個所需區域建立不同類型的參考電壓電路(Vref-1，2...)，以提供用於非參考電壓電路(Non-ref-1，2...)不同的選擇。
截面圖40為參考電壓電路中的一種。圖2是圖1中的截面圖40的放大圖。參考電壓電路Vref-N包括耦合至少兩個電晶體(M1和M2)以產生參考電壓值。電晶體可以是一個平面的MOS或FinFET。電晶 體可以是P通道電晶體或是N通道電晶體。當電晶體M1和M2兩者被開通，可以檢測M1和M2之間的閾值電壓值差以輸出參考電壓值Vref-N。在本揭露中，每個參考電壓電路包括像是Vref-N中M1和M2的電晶體對。例如，參考電壓電路Vref-1具有一個電晶體對，M11和M12，其生成參考電壓值Vref-1。參考電壓電路Vref-2具有一個電晶體對，M21和M22，其生成參考電壓值Vref-2。在本揭露中，裝置100至少有兩個不同的Vref。
取參考電壓電路Vref-1和Vref-2作為一個例子，為了要有至少兩個不同的Vref，電晶體M11，M12，M21和M22至少有三個不同的閾值電壓組合：(M11=M21，M12≠M22)，(M11≠M21，M12=M22)或(M11≠M21，M12≠M22)。應當理解，當有需要N個不同的Vref，裝置100的電晶體對組合會是一個大數目。然而，在本揭露中，不管有多少不同的Vref需要，電晶體對的所有組合可以藉由採用設計用於非參考電壓電路的步驟來實現。
在一些實施例中，用於製造非參考電壓電路一些柵極的步驟被採用以形成一個參考電壓電路的電晶體對。在一些實施例中，參考電壓電路的電晶體柵極可以包括設計為構成非參考電壓電路的柵極組件(相同或局部的)。本揭露中使用的名詞“組件”，是指一個電晶體中柵極的薄膜或薄膜疊層。柵極可以是較大尺寸如N40或以上的平面柵極，或用於更先進的技術節點，例如N28或以下的複合柵極(例如金屬柵極)。而在一個或多個非參考電壓電路形成組件時，可以同時形成各參考電壓電路的組件。在參考電壓電路中的組件特性，如導電類型或厚度，也可以設計為與在同一個裝置中非參考電壓電路的相應組件相同。然而，處理方式，如堆疊的順序或尺寸，可以不同。
採取M1和M2在電路Vref-N作為一個例子，在Non-Ref-1電路的電晶體形成α組件時形成M1的一個α組件，並且在Non-Ref-1電路的電晶 體形成β組件時形成M1的一個β組件。在Non-Ref-1電路的電晶體形成β組件時形成M2的一個β組件，並且在Non-Ref-3電路的電晶體形成δ組件時形成M2的一個δ組件。因此，M1具有柵極結構，其包含α，β，並且M2的柵極結構包含βandδ。藉由區分α、β、δ的功函數，可以產生期望的參考電壓Vref-1。區分可以藉由選擇用於非參考電壓電路的預定組件來實現。
藉由選擇用於一或多個非參考電壓電路的多個不同柵極的預定組件，相同的方法可以擴展到產生各種參考電壓應用(例如，一些低功耗應用和一些用於高電壓應用)。例如，類似於圖1中的裝置100的半導體裝置，被設計成具有至少三個不同參考電壓的電路Vref-1，Vref-2，和Vref-3。Vref-1的輸出參考電壓介於約0.1到350毫伏，Vref-2的輸出參考電壓是從約350到700毫伏，Vref-3的輸出參考電壓是約700毫伏到1伏之間。為了在同一個裝置100開發三種不同的參考電壓的電路而不使用額外的光罩或步驟，形成參考電壓的電路，Vref-1和Vref-2，和Vref-3時可以採用製造非參考電壓電路的步驟。例如，製造非參考電壓電路一些預定步驟可以產生用於其中的電晶體，不同的組件可至少包含α1，α2，α3，α4，β1，β2，β3，β4幾個不同的組件。組件αx和βx是用於設計非參考電壓電路柵極結構的組件。
如果在Vref-1中M11的期望閾值電壓可以藉由形成具有組件α1和β1的柵極結構設計而得，可採用在相應的非參考電壓電路中製造α1和β1的步驟。如此一來，Vref-1中的α1和β1，可在一個相應的非參考電壓電路形成α1和β1時形成。在一些實施例中，M11可以藉由僅修改用於製造相應的非參考電壓電路的光罩來實現，而不用增加額外的光罩。藉由應用相同的方法，在其它電晶體柵極的組件可以藉由選擇α1，α2，α3，α4，β1，β2，β3，β4不同的組合，以形成不同的柵結構，而具有各種閾值電壓，以便形成各種參考電壓電路。
圖3A-3C是包括三個不同參考電壓電路的實施例截面圖，其包括三種電晶體對的不同組合，以產生三個不同的參考電壓。各圖具有如圖2所示對應於電晶體對的兩個柵極，並且每個電晶體對具有與其他電晶體對不同的參考電壓。在本實施例中，每個電晶體對具有第一電晶體。由於每個電晶體對的第一電晶體具有相同的閾值電壓和結構，它們都表示為電晶體700。此外，每個電晶體對具有第二電晶體80x(800，801，或802)。在本實施例中，電晶體800，801，和802的每個具有彼此不同的閾值電壓。在一些實施例中，第一電晶體被稱為基礎電晶體和第二電晶體被稱為翻轉電晶體。在基礎電晶體的組件僅具有本質型或第一導電類型(如n型)。該翻轉電晶體的組件可以具有本質型、第一導電類型(例如n型)或與第一導電類型相反的的第二導電類型。所有三個電晶體對是在形成至少一個非參考電壓電路(未在附圖中顯示)的柵極的某些組件時被形成。
在圖3A中，電晶體700和800的每一者具有半導體基板35。電晶體700包括第一閾值電壓。電晶體800包括第二閾值電壓。該第二閾值電壓與第一閾值電壓不同。電晶體700或800包括基礎金屬柵極層30。在一些實施例中，該基礎金屬柵極層30是負型摻雜(或者稱為n型)的負型金屬柵極層。此外，電晶體800包括在基礎金屬柵極層30上方的翻轉金屬柵極層31。翻轉金屬柵極層31具有與基礎金屬柵極層30相反的摻雜導電類型。在一些實施例中，翻轉金屬柵極層31為正型摻雜(或者稱為p型)。
在一些實施例中，電晶體700還具有設置基礎金屬柵極層30上方的第一柵極金屬20。第二柵極金屬21可任選地設置在在第一柵極金屬20上方。基礎金屬柵極層30設置在第一柵極金屬20和半導體基板35之間。柵極填充層19是在基礎金屬柵極層30上方。在一些實施例中，柵極填充層19設置在第二柵極金屬21的上方。柵極填充層19可包括導電 材料，如鎢，鋁，或銅。柵極金屬，如第一柵極金屬20和第二柵極金屬21，位於柵極填充層19和基礎金屬柵極層30之間。柵極隔離層15襯於該柵極介電層17。氮化物層28襯於柵極隔離層15並且覆蓋該半導體基板35。介電層(ILD)29位於氮化物層28上方。柵極金屬如第一柵極金屬20與第二柵極金屬21形成柵極填充層19和基礎金屬柵極層30之間的電耦接。在一些實施例中，基礎金屬柵極層30、翻轉金屬柵極層31、第一柵極金屬20、或第二柵極金屬21包括如氮化鉭(TaN)、氮化鈦(TiN)、鉭(Ta)或鈦(Ti)材料。在一些實施例中，基礎金屬柵極層30、翻轉金屬柵極層31、第一柵極金屬20或第二柵極金屬21的厚度在約0.5埃到大約50埃的範圍內。翻轉金屬柵極層31具有與基礎金屬柵極層30不同的導電類型。例如，如果基礎金屬柵極層30是n型時，該翻轉金屬柵極層31是p型。
在圖3B中，與圖3A中的電晶體800相比，電晶體801包括附加的翻轉金屬柵極層32以形成具有與圖3A參考電壓電路不同的參考電壓電路。第一柵極金屬20設置在翻轉金屬柵極層32上方，翻轉金屬柵極層32是位於翻轉金屬柵極層31和第一柵極金屬20之間。翻轉金屬柵極層32和31有一相同的導電類型(p型或n型)。在一些實施例中，翻轉金屬柵極層32類似於翻轉金屬柵極層31的結構和組成。
藉由加入另一翻轉金屬柵極層32而使得正電荷粒子累積，可以改變電晶體801的閾值電壓使其不同於電晶體800的閾值電壓，然而，增加另一翻轉金屬柵極層32可在形成非參考電壓電路中的同一個組件時同時形成。
如圖3C所示，與圖3B的電晶體801相比，電晶體802包括附加的翻轉金屬柵極層33。附加的翻轉金屬柵極層33位於翻轉金屬柵極層32與柵極金屬(例如第一柵極金屬20)之間。翻轉金屬柵極層32和33具有相同的導電類型(p型或n型)。在一些實施例中，翻轉金屬柵極層32 類似於翻轉金屬柵極層33的結構和組成。類似於翻轉金屬柵極層32，增加另一翻轉金屬柵極層33可在形成非參考電壓電路中的同一個組件時同時形成。
翻轉電晶體可以藉由包括不同數目的翻轉金屬柵極層而具有不同的可能閾值電壓值。不同的閾值電壓值對應於翻轉金屬柵極層的數目。在一些實施例中，當每個翻轉金屬柵極層彼此類似，閾值電壓值的不同值相距一預定差值。
在圖4中，顯示製造圖1的半導體裝置100的示例性方法。在步驟410中，接收半導體基板35。步驟410的一些示範性實施例顯示在圖5中。步驟420形成多個第一電晶體。每個第一電晶體具有基礎柵極結構並位於一個相對應的參考電壓電路中。第一電晶體藉由形成基礎層(例如具有第一導電類型的基礎金屬柵極層30)而具有基礎閾值電壓值。步驟420的一些示範性實施例顯示在圖6中。
步驟430形成多個第二電晶體。每個第二電晶體具有翻轉柵極結構並位於一個相對應的參考電壓電路中。每個第二電晶體耦接在步驟420中形成的第一電晶體。翻轉柵極結構包括至少一個翻轉層，其具有與第一導電類型相反的第二導電類型。每個第二電晶體彼此閾值電壓不同，該閾值電壓差異是由翻轉層的不同組合所決定。步驟430的一些示範性實施例顯示在圖7-9中。電晶體800具有翻轉層31，電晶體801具有翻轉層31和32，並且電晶體802具有翻轉層31，32和33。可選地，柵極金屬20可在其上被設置。
在圖10中，柵極填充層19被形成以覆蓋第一柵極金屬20。柵極填充層19可以藉由沉積製程，諸如CVD(化學氣相沉積)、PVD(物理氣相沉積)或ALD(原子層沉積)等等來形成。
在圖11中，CMP步驟被引入以除去過量的柵極填充層19而得到平坦表面以暴露介電層29。柵極金屬的頂部和介電層29可以共面。
在圖12中，參考電壓電路Vref-1或參考電壓電路Vref-2包括基礎電晶體700(例如第一電晶體)和翻轉電晶體802作為第二個電晶體。參考電壓電路Vref-1包括電晶體700和形成在半導體基板35的柵極結構802。參考電壓電路Vref-2包括電晶體700和形成在半導體基板35上的柵極結構801。
在圖13，導電層39可以在柵極結構和介電層29上方形成，以耦接電晶體700和802，以形成參考電壓電路Vref-1的一部分。導電層39也被用以耦接700和801以形成參考電壓電路Vref-2的一部分。
本揭露的一些實施方式提供一種半導體裝置。該半導體裝置包含第一電晶體，經配置以具有第一閾值電壓值，其中該第一電晶體包括第一柵極結構，該第一柵極結構，包括第一組件，其具有第一導電類型。該半導體裝置還包含第二電晶體，經配置以具有與該第一閾值電壓值不同的第二閾值電壓值，該第二電晶體包括第二柵極結構，該第二柵極結構包括第二組件，其具有該第一導電類型。該半導體裝置另包含至少一個附加組件，設置在該第二組件上方，其中該至少一個附加組件具有與第一導電類型相反的第二導電類型，並且該第一電晶體和該第二電晶體經耦接，使得該至少一個附加組件的數目由第一閾值電壓值與第二閾值電壓值之間所需的電壓差決定。
在本揭露的一些實施例中，其中該第一導電類型為n型。
在本揭露的一些實施例中，其中該第一電晶體或該第二電晶體是一個鰭式電晶體(FinFET)。
在本揭露的一些實施例中，其中該第一組件包括氮化鉭，氮化鈦，鉭，或鈦。
在本揭露的一些實施例中，其中該第二組件包括氮化鉭，氮化鈦，鉭，或鈦。
在本揭露的一些實施例中，其中該至少一個附加組件包括氮化 鉭，氮化鈦，鉭，或鈦。
在本揭露的一些實施例中，其中該第一組件和該第二組件包括一基本上相同厚度。
在本揭露的一些實施例中，其中該第一組件、該第二組件或該第三組件具有從約0.5埃到約50埃的厚度範圍。
本揭露的另一些實施方式提供一種半導體裝置。該半導體裝置包含第一參考電壓電路，其包括：第一電晶體，經配置以包括第一柵極結構，其包含具有第一導電類型的第一層；第二電晶體，經配置以具有與該第一電晶體不同的閾值電壓值，該第二電晶體包括第二柵極結構，其包含具有該第一導電類型的第二層；以及第三層，設置在該第二層上方，該第三層具有與該第一導電類型相反的第二導電類型。該第一電晶體和該第二電晶體經耦接而為該半導體裝置的第一非參考電路提供第一參考電壓。該半導體裝置還包含第二參考電壓電路，其包括：第三電晶體，經配置以包括第三柵極結構，其包含具有該第一導電類型的第四層；第四電晶體，經配置以具有不同於該第三電晶體的閾值電壓值，該第四電晶體包括第四柵極結構，其包含具有該第一導電類型的第五層；以及第六層，設置在該第五層上方，該第六層包括與該第一導電類型相反的該第二導電類型。該第三電晶體和第四電晶體經耦接而為該半導體裝置的第二非參考電路提供第二參考電壓，該第二參考電壓與該第一參考電壓不同。
在本揭露的一些實施例中，其中該第四電晶體還包括第七層，其設置在該第六層上方，並且該第七層具有該第二導電類型。
在本揭露的一些實施例中，半導體裝置還包括至少一個附加參考電壓電路，並且該至少一個附加參考電壓電路提供與該第一參考電壓以及該第二參考電壓不同的參考電壓。
在本揭露的一些實施例，半導體裝置還包括一個非參考電路， 其中該第一參考電壓電路或該第二參考電壓電路中至少一個層是由該非參考電路的柵極結構的層來決定。
在本揭露的一些實施例，半導體裝置還包括一個非參考電路，其中該第三或第四參考電壓電路中的至少一個層是由非參考電路的柵極結構的層來決定。
在本揭露的一些實施例中，其中該第一層和第二層具有大致相同的厚度。
在本揭露的一些實施例中，其中該第一層和第四層具有大致相同的厚度。
本揭露的又一些實施例提供一種製造半導體裝置的方法。該方法包括接收基板；在該基板上形成多個參考電壓電路，其中該些多個參考電壓電路提供不同參考電壓；以及在該基板上形成多個非參考電路，其中該些多個參考電壓電路與該些多個非參考電路同時形成。
在本揭露的一些實施例中，其中該些多個參考電壓電路的每一者包括一個電晶體對，該電晶體對包括基礎電晶體和翻轉電晶體。
在本揭露的一些實施例中，該方法還包括為該些多個非參考電路中的一者選擇形成組件的步驟，以在該些多個參考電壓電路中的一者形成組件。
在本揭露的一些實施例中，該方法還包括根據用於形成該些多個非參考電路中的一者的成形步驟，決定在該些多個參考電壓電路中的一電晶體中組件的組合方式。
在本揭露的一些實施例中，還包括針對相對應該些多個參考電壓電路中的每一者的組件，形成不同的組件組合。
前面該概括了幾個實施例的特徵，使得本領域技術人員可更好地理解本揭露的各個方面。本領域技術人員應該明白他們可以將本揭露當作基礎，用來設計或修改用於執行相同目的和/或獲得在此介紹 的實施例的相同好處的其他過程和結構。本領域技術人員也可意識到這樣等同的構造並不脫離本揭露的精神和保護範圍，並且在不脫離本揭露的精神和保護範圍的情況下，他們可以在此做各種改變、替換和修改。
15‧‧‧柵極隔離層
17‧‧‧柵極介電層
19‧‧‧柵極填充層
20‧‧‧第一柵極金屬
21‧‧‧第二柵極金屬
28‧‧‧氮化物層
29‧‧‧介電層(ILD)
30‧‧‧基礎金屬柵極層
31‧‧‧翻轉金屬柵極層
35‧‧‧半導體基板
700、800‧‧‧電晶體

Claims (10)

  1. 一種半導體裝置，包括：第一電晶體，經配置以具有第一閾值電壓值，其中該第一電晶體包括第一柵極結構，該第一柵極結構，包括第一組件，其具有第一導電類型；第二電晶體，經配置以具有與該第一閾值電壓值不同的第二閾值電壓值，該第二電晶體包括第二柵極結構，該第二柵極結構包括第二組件，其具有該第一導電類型；至少一個附加組件，設置在該第二組件上方，其中該至少一個附加組件具有與第一導電類型相反的第二導電類型，並且該第一電晶體和該第二電晶體經耦接，使得該至少一個附加組件的數目由第一閾值電壓值與第二閾值電壓值之間所需的電壓差決定。
  2. 根據請求項1的半導體裝置，其中該第一導電類型為n型。
  3. 根據請求項1的半導體裝置，其中該第一電晶體或該第二電晶體是一個鰭式電晶體(FinFET)。
  4. 根據請求項1的半導體裝置，其中該第一組件包括氮化鉭，氮化鈦，鉭，或鈦。
  5. 根據請求項1的半導體裝置，其中該第二組件包括氮化鉭，氮化鈦，鉭，或鈦。
  6. 一種半導體裝置，包括：第一參考電壓電路，包括：第一電晶體，經配置以包括第一柵極結構，其包含具有第一導電類型的第一層；第二電晶體，經配置以具有與該第一電晶體不同的閾值電壓值，該第二電晶體包括第二柵極結構，其包含具有該第一導電類型的第二層；第三層，設置在該第二層上方，該第三層具有與該第一導電類型相反的第二導電類型，其中該第一電晶體和該第二電晶體經耦接為該半導體裝置的 第一非參考電路提供第一參考電壓；第二參考電壓電路，包括：第三電晶體，經配置以包括第三柵極結構，其包含具有該第一導電類型的第四層；第四電晶體，經配置以具有不同於該第三電晶體的閾值電壓值，該第四電晶體包括第四柵極結構，其包含具有該第一導電類型的第五層；第六層，設置在該第五層上方，該第六層包括與該第一導電類型相反的該第二導電類型，其中該第三電晶體和第四電晶體經耦接以為該半導體裝置的第二非參考電路提供第二參考電壓，該第二參考電壓與該第一參考電壓不同。
  7. 根據請求項6的半導體裝置，其中該第四電晶體還包括第七層，其設置在該第六層上方，並且該第七層具有該第二導電類型。
  8. 根據請求項6的半導體裝置，還包括至少一個附加參考電壓電路，並且該至少一個附加參考電壓電路提供與該第一參考電壓以及該第二參考電壓不同的參考電壓。
  9. 根據請求項6的半導體裝置，還包括一個非參考電路，其中該第一參考電壓電路或該第二參考電壓電路中至少一個層是由該非參考電路的柵極結構的層來決定。
  10. 一種製造半導體裝置的方法，包括：接收基板；在該基板上形成多個參考電壓電路，其中該些多個參考電壓電路提供不同參考電壓；以及在該基板上形成多個非參考電路，其中該些多個參考電壓電路與該些多個非參考電路同時形成。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI759924B (zh) * 2019-11-01 2022-04-01 愛爾蘭商亞德諾半導體國際無限公司 參考訊號產生器以及使用參考訊號產生器而在輸出節點提供電壓參考訊號之方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10345846B1 (en) * 2018-02-22 2019-07-09 Apple Inc. Reference voltage circuit with flipped-gate transistor
US10181854B1 (en) * 2018-06-15 2019-01-15 Dialog Semiconductor (Uk) Limited Low power input buffer using flipped gate MOS
US11417653B2 (en) * 2019-09-30 2022-08-16 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method for forming the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201351653A (zh) * 2012-06-08 2013-12-16 Taiwan Semiconductor Mfg 半導體元件與其製法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6859092B2 (en) 2003-04-17 2005-02-22 International Business Machines Corporation Method and low voltage CMOS circuit for generating voltage and current references
JP4847103B2 (ja) * 2005-11-07 2011-12-28 株式会社リコー ハーフバンドギャップリファレンス回路
US20070178634A1 (en) * 2006-01-31 2007-08-02 Hyung Suk Jung Cmos semiconductor devices having dual work function metal gate stacks
US7445976B2 (en) * 2006-05-26 2008-11-04 Freescale Semiconductor, Inc. Method of forming a semiconductor device having an interlayer and structure therefor
US7951678B2 (en) 2008-08-12 2011-05-31 International Business Machines Corporation Metal-gate high-k reference structure
US8524588B2 (en) * 2008-08-18 2013-09-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming a single metal that performs N work function and P work function in a high-k/metal gate process
US8264214B1 (en) 2011-03-18 2012-09-11 Altera Corporation Very low voltage reference circuit
US20130049134A1 (en) * 2011-08-30 2013-02-28 Renesas Electronics Corporation Semiconductor device and method of making same
US9793268B2 (en) 2014-01-24 2017-10-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method and structure for gap filling improvement
KR102212267B1 (ko) 2014-03-19 2021-02-04 삼성전자주식회사 반도체 장치 및 그 제조 방법
US9401362B2 (en) * 2014-04-04 2016-07-26 Globalfoundries Inc. Multiple threshold voltage semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201351653A (zh) * 2012-06-08 2013-12-16 Taiwan Semiconductor Mfg 半導體元件與其製法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI759924B (zh) * 2019-11-01 2022-04-01 愛爾蘭商亞德諾半導體國際無限公司 參考訊號產生器以及使用參考訊號產生器而在輸出節點提供電壓參考訊號之方法
US11687111B2 (en) 2019-11-01 2023-06-27 Analog Devices International Unlimited Company Reference generator using FET devices with different gate work functions

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