TWI601181B - 利用電漿處理工件之系統、複合工件之選擇性電漿處理法及利用相同方法獲得的經蝕刻之複合工件 - Google Patents
利用電漿處理工件之系統、複合工件之選擇性電漿處理法及利用相同方法獲得的經蝕刻之複合工件 Download PDFInfo
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- TWI601181B TWI601181B TW102126199A TW102126199A TWI601181B TW I601181 B TWI601181 B TW I601181B TW 102126199 A TW102126199 A TW 102126199A TW 102126199 A TW102126199 A TW 102126199A TW I601181 B TWI601181 B TW I601181B
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32366—Localised processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32403—Treating multiple sides of workpieces, e.g. 3D workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1257037A FR2993576B1 (fr) | 2012-07-20 | 2012-07-20 | Dispositif de traitement d'un objet par plasma |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201415520A TW201415520A (zh) | 2014-04-16 |
| TWI601181B true TWI601181B (zh) | 2017-10-01 |
Family
ID=47227933
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102126199A TWI601181B (zh) | 2012-07-20 | 2013-07-22 | 利用電漿處理工件之系統、複合工件之選擇性電漿處理法及利用相同方法獲得的經蝕刻之複合工件 |
Country Status (9)
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9378975B2 (en) | 2014-02-10 | 2016-06-28 | Tokyo Electron Limited | Etching method to form spacers having multiple film layers |
| WO2018044713A1 (en) * | 2016-08-29 | 2018-03-08 | Tokyo Electron Limited | Method of quasi-atomic layer etching of silicon nitride |
| JP6836953B2 (ja) * | 2016-12-13 | 2021-03-03 | 東京エレクトロン株式会社 | 窒化シリコンから形成された第１領域を酸化シリコンから形成された第２領域に対して選択的にエッチングする方法 |
| KR102537742B1 (ko) | 2017-02-23 | 2023-05-26 | 도쿄엘렉트론가부시키가이샤 | 자가 정렬 블록 구조물들의 제조를 위한 실리콘 질화물 맨드렐의 이방성 추출 방법 |
| WO2018156975A1 (en) | 2017-02-23 | 2018-08-30 | Tokyo Electron Limited | Method of quasi-atomic layer etching of silicon nitride |
| KR102440367B1 (ko) * | 2017-06-22 | 2022-09-05 | 삼성전자주식회사 | Rps를 이용한 식각 방법 및 그 식각 방법을 포함한 반도체 소자 제조방법 |
| US10658192B2 (en) * | 2017-09-13 | 2020-05-19 | Tokyo Electron Limited | Selective oxide etching method for self-aligned multiple patterning |
| US10607852B2 (en) * | 2017-09-13 | 2020-03-31 | Tokyo Electron Limited | Selective nitride etching method for self-aligned multiple patterning |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5296272A (en) * | 1990-10-10 | 1994-03-22 | Hughes Aircraft Company | Method of implanting ions from a plasma into an object |
| US20070090092A1 (en) * | 2003-06-16 | 2007-04-26 | Saint-Gobain Glass France | Method and device for removing layers in some areas of glass plates |
| JP2007523459A (ja) * | 2004-02-18 | 2007-08-16 | ドライ プラズマ システムズ インコーポレーテッド | 高出力密度ダウンストリーム・プラズマ |
| TW200807545A (en) * | 2006-04-21 | 2008-02-01 | New Power Plasma Co Ltd | Plasma processing system |
| CN201228282Y (zh) * | 2007-12-24 | 2009-04-29 | 杨思泽 | 脉冲高能量密度等离子体辅助多源复合材料表面改性装置 |
| TW201028804A (en) * | 2008-12-09 | 2010-08-01 | Hitachi Int Electric Inc | Substrate processing method |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5273609A (en) * | 1990-09-12 | 1993-12-28 | Texas Instruments Incorporated | Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment |
| JP3752468B2 (ja) * | 1991-04-04 | 2006-03-08 | 株式会社日立製作所 | 半導体装置の製造方法 |
| JP4654176B2 (ja) * | 1996-02-22 | 2011-03-16 | 住友精密工業株式会社 | 誘導結合プラズマ・リアクタ |
| US6267074B1 (en) * | 1997-02-24 | 2001-07-31 | Foi Corporation | Plasma treatment systems |
| EP1055249A1 (en) * | 1998-02-09 | 2000-11-29 | Applied Materials, Inc. | Plasma assisted processing chamber with separate control of species density |
| US6051073A (en) * | 1998-02-11 | 2000-04-18 | Silicon Genesis Corporation | Perforated shield for plasma immersion ion implantation |
| US20010002584A1 (en) * | 1998-12-01 | 2001-06-07 | Wei Liu | Enhanced plasma mode and system for plasma immersion ion implantation |
| US20060124588A1 (en) * | 1999-01-05 | 2006-06-15 | Berg & Berg Enterprises, Llc | System and method for reducing metal oxides with hydrogen radicals |
| JP2002100623A (ja) * | 2000-09-20 | 2002-04-05 | Fuji Daiichi Seisakusho:Kk | 薄膜半導体製造装置 |
| JP2004265627A (ja) * | 2003-02-14 | 2004-09-24 | Masato Toshima | プラズマ発生装置およびプラズマエッチング装置 |
| US20060276043A1 (en) * | 2003-03-21 | 2006-12-07 | Johnson Mark A L | Method and systems for single- or multi-period edge definition lithography |
| TWI349042B (en) * | 2006-02-09 | 2011-09-21 | Sputtering system providing large area sputtering and plasma-assisted reactive gas dissociation | |
| EP1936656A1 (en) * | 2006-12-21 | 2008-06-25 | Nederlandse Organisatie voor Toegepast-Natuuurwetenschappelijk Onderzoek TNO | Plasma generator and method for cleaning an object |
| US7976674B2 (en) * | 2007-06-13 | 2011-07-12 | Tokyo Electron Limited | Embedded multi-inductive large area plasma source |
| JP5214261B2 (ja) * | 2008-01-25 | 2013-06-19 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US20090286397A1 (en) * | 2008-05-15 | 2009-11-19 | Lam Research Corporation | Selective inductive double patterning |
| US8207470B2 (en) * | 2008-10-20 | 2012-06-26 | Industry-University Cooperation Foundation Hanyang University | Apparatus for generating remote plasma |
| CN102110650A (zh) * | 2009-12-29 | 2011-06-29 | 中国科学院微电子研究所 | 一种半导体器件及其制造方法 |
| US8574447B2 (en) * | 2010-03-31 | 2013-11-05 | Lam Research Corporation | Inorganic rapid alternating process for silicon etch |
| US9155181B2 (en) * | 2010-08-06 | 2015-10-06 | Lam Research Corporation | Distributed multi-zone plasma source systems, methods and apparatus |
-
2012
- 2012-07-20 FR FR1257037A patent/FR2993576B1/fr active Active
-
2013
- 2013-07-22 SG SG11201500389UA patent/SG11201500389UA/en unknown
- 2013-07-22 KR KR1020157004383A patent/KR102060671B1/ko active Active
- 2013-07-22 JP JP2015522156A patent/JP6298814B2/ja active Active
- 2013-07-22 WO PCT/FR2013/051768 patent/WO2014013209A1/fr active Application Filing
- 2013-07-22 TW TW102126199A patent/TWI601181B/zh active
- 2013-07-22 EP EP13756581.8A patent/EP2875517B1/fr active Active
- 2013-07-22 US US14/415,976 patent/US20150243485A1/en not_active Abandoned
- 2013-07-22 CN CN201380038733.8A patent/CN104685605B/zh active Active
-
2018
- 2018-01-13 US US15/870,890 patent/US11075057B2/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5296272A (en) * | 1990-10-10 | 1994-03-22 | Hughes Aircraft Company | Method of implanting ions from a plasma into an object |
| US20070090092A1 (en) * | 2003-06-16 | 2007-04-26 | Saint-Gobain Glass France | Method and device for removing layers in some areas of glass plates |
| JP2007523459A (ja) * | 2004-02-18 | 2007-08-16 | ドライ プラズマ システムズ インコーポレーテッド | 高出力密度ダウンストリーム・プラズマ |
| TW200807545A (en) * | 2006-04-21 | 2008-02-01 | New Power Plasma Co Ltd | Plasma processing system |
| CN201228282Y (zh) * | 2007-12-24 | 2009-04-29 | 杨思泽 | 脉冲高能量密度等离子体辅助多源复合材料表面改性装置 |
| TW201028804A (en) * | 2008-12-09 | 2010-08-01 | Hitachi Int Electric Inc | Substrate processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2875517B1 (fr) | 2020-05-27 |
| CN104685605A (zh) | 2015-06-03 |
| JP2015526897A (ja) | 2015-09-10 |
| US11075057B2 (en) | 2021-07-27 |
| US20150243485A1 (en) | 2015-08-27 |
| FR2993576B1 (fr) | 2018-05-18 |
| FR2993576A1 (fr) | 2014-01-24 |
| EP2875517A1 (fr) | 2015-05-27 |
| TW201415520A (zh) | 2014-04-16 |
| WO2014013209A1 (fr) | 2014-01-23 |
| JP6298814B2 (ja) | 2018-03-20 |
| US20180158651A1 (en) | 2018-06-07 |
| KR20150038172A (ko) | 2015-04-08 |
| SG11201500389UA (en) | 2015-03-30 |
| CN104685605B (zh) | 2017-05-17 |
| KR102060671B1 (ko) | 2019-12-30 |
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