SG11201500389UA - Device for treating an object with plasma - Google Patents

Device for treating an object with plasma

Info

Publication number
SG11201500389UA
SG11201500389UA SG11201500389UA SG11201500389UA SG11201500389UA SG 11201500389U A SG11201500389U A SG 11201500389UA SG 11201500389U A SG11201500389U A SG 11201500389UA SG 11201500389U A SG11201500389U A SG 11201500389UA SG 11201500389U A SG11201500389U A SG 11201500389UA
Authority
SG
Singapore
Prior art keywords
plasma
treating
Prior art date
Application number
SG11201500389UA
Other languages
English (en)
Inventor
Gilles Baujon
Emmanuel Guidotti
Yannick Pilloux
Patrick Rabinzohn
Julien Richard
Marc Segers
Vincent Girault
Original Assignee
Nanoplas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanoplas filed Critical Nanoplas
Publication of SG11201500389UA publication Critical patent/SG11201500389UA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32403—Treating multiple sides of workpieces, e.g. 3D workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
SG11201500389UA 2012-07-20 2013-07-22 Device for treating an object with plasma SG11201500389UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1257037A FR2993576B1 (fr) 2012-07-20 2012-07-20 Dispositif de traitement d'un objet par plasma
PCT/FR2013/051768 WO2014013209A1 (fr) 2012-07-20 2013-07-22 Dispositif de traitement d'un objet par plasma

Publications (1)

Publication Number Publication Date
SG11201500389UA true SG11201500389UA (en) 2015-03-30

Family

ID=47227933

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201500389UA SG11201500389UA (en) 2012-07-20 2013-07-22 Device for treating an object with plasma

Country Status (9)

Country Link
US (2) US20150243485A1 (enrdf_load_stackoverflow)
EP (1) EP2875517B1 (enrdf_load_stackoverflow)
JP (1) JP6298814B2 (enrdf_load_stackoverflow)
KR (1) KR102060671B1 (enrdf_load_stackoverflow)
CN (1) CN104685605B (enrdf_load_stackoverflow)
FR (1) FR2993576B1 (enrdf_load_stackoverflow)
SG (1) SG11201500389UA (enrdf_load_stackoverflow)
TW (1) TWI601181B (enrdf_load_stackoverflow)
WO (1) WO2014013209A1 (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9378975B2 (en) 2014-02-10 2016-06-28 Tokyo Electron Limited Etching method to form spacers having multiple film layers
WO2018044713A1 (en) * 2016-08-29 2018-03-08 Tokyo Electron Limited Method of quasi-atomic layer etching of silicon nitride
JP6836953B2 (ja) * 2016-12-13 2021-03-03 東京エレクトロン株式会社 窒化シリコンから形成された第１領域を酸化シリコンから形成された第２領域に対して選択的にエッチングする方法
KR102537742B1 (ko) 2017-02-23 2023-05-26 도쿄엘렉트론가부시키가이샤 자가 정렬 블록 구조물들의 제조를 위한 실리콘 질화물 맨드렐의 이방성 추출 방법
WO2018156975A1 (en) 2017-02-23 2018-08-30 Tokyo Electron Limited Method of quasi-atomic layer etching of silicon nitride
KR102440367B1 (ko) * 2017-06-22 2022-09-05 삼성전자주식회사 Rps를 이용한 식각 방법 및 그 식각 방법을 포함한 반도체 소자 제조방법
US10658192B2 (en) * 2017-09-13 2020-05-19 Tokyo Electron Limited Selective oxide etching method for self-aligned multiple patterning
US10607852B2 (en) * 2017-09-13 2020-03-31 Tokyo Electron Limited Selective nitride etching method for self-aligned multiple patterning

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US5273609A (en) * 1990-09-12 1993-12-28 Texas Instruments Incorporated Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment
US5296272A (en) * 1990-10-10 1994-03-22 Hughes Aircraft Company Method of implanting ions from a plasma into an object
JP3752468B2 (ja) * 1991-04-04 2006-03-08 株式会社日立製作所 半導体装置の製造方法
JP4654176B2 (ja) * 1996-02-22 2011-03-16 住友精密工業株式会社 誘導結合プラズマ・リアクタ
US6267074B1 (en) * 1997-02-24 2001-07-31 Foi Corporation Plasma treatment systems
EP1055249A1 (en) * 1998-02-09 2000-11-29 Applied Materials, Inc. Plasma assisted processing chamber with separate control of species density
US6051073A (en) * 1998-02-11 2000-04-18 Silicon Genesis Corporation Perforated shield for plasma immersion ion implantation
US20010002584A1 (en) * 1998-12-01 2001-06-07 Wei Liu Enhanced plasma mode and system for plasma immersion ion implantation
US20060124588A1 (en) * 1999-01-05 2006-06-15 Berg & Berg Enterprises, Llc System and method for reducing metal oxides with hydrogen radicals
JP2002100623A (ja) * 2000-09-20 2002-04-05 Fuji Daiichi Seisakusho:Kk 薄膜半導体製造装置
JP2004265627A (ja) * 2003-02-14 2004-09-24 Masato Toshima プラズマ発生装置およびプラズマエッチング装置
US20060276043A1 (en) * 2003-03-21 2006-12-07 Johnson Mark A L Method and systems for single- or multi-period edge definition lithography
AT412719B (de) * 2003-06-16 2005-06-27 Eckelt Glas Gmbh Verfahren und vorrichtung zum bereichsweisen entschichten von glasscheiben
US7015415B2 (en) * 2004-02-18 2006-03-21 Dry Plasma Systems, Inc. Higher power density downstream plasma
TWI349042B (en) * 2006-02-09 2011-09-21 Sputtering system providing large area sputtering and plasma-assisted reactive gas dissociation
KR100799175B1 (ko) * 2006-04-21 2008-02-01 주식회사 뉴파워 프라즈마 플라즈마 프로세싱 시스템 및 그 제어 방법
EP1936656A1 (en) * 2006-12-21 2008-06-25 Nederlandse Organisatie voor Toegepast-Natuuurwetenschappelijk Onderzoek TNO Plasma generator and method for cleaning an object
US7976674B2 (en) * 2007-06-13 2011-07-12 Tokyo Electron Limited Embedded multi-inductive large area plasma source
CN201228282Y (zh) * 2007-12-24 2009-04-29 杨思泽 脉冲高能量密度等离子体辅助多源复合材料表面改性装置
JP5214261B2 (ja) * 2008-01-25 2013-06-19 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
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CN102110650A (zh) * 2009-12-29 2011-06-29 中国科学院微电子研究所 一种半导体器件及其制造方法
US8574447B2 (en) * 2010-03-31 2013-11-05 Lam Research Corporation Inorganic rapid alternating process for silicon etch
US9155181B2 (en) * 2010-08-06 2015-10-06 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus

Also Published As

Publication number Publication date
TWI601181B (zh) 2017-10-01
EP2875517B1 (fr) 2020-05-27
CN104685605A (zh) 2015-06-03
JP2015526897A (ja) 2015-09-10
US11075057B2 (en) 2021-07-27
US20150243485A1 (en) 2015-08-27
FR2993576B1 (fr) 2018-05-18
FR2993576A1 (fr) 2014-01-24
EP2875517A1 (fr) 2015-05-27
TW201415520A (zh) 2014-04-16
WO2014013209A1 (fr) 2014-01-23
JP6298814B2 (ja) 2018-03-20
US20180158651A1 (en) 2018-06-07
KR20150038172A (ko) 2015-04-08
CN104685605B (zh) 2017-05-17
KR102060671B1 (ko) 2019-12-30

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