TWI598683B - 含氟醇之分子光阻材料及其使用製程 - Google Patents

含氟醇之分子光阻材料及其使用製程 Download PDF

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Publication number
TWI598683B
TWI598683B TW100141116A TW100141116A TWI598683B TW I598683 B TWI598683 B TW I598683B TW 100141116 A TW100141116 A TW 100141116A TW 100141116 A TW100141116 A TW 100141116A TW I598683 B TWI598683 B TW I598683B
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TW
Taiwan
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group
hydrogen
substituted
alkyl
unsubstituted
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TW100141116A
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English (en)
Chinese (zh)
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TW201234104A (en
Inventor
露意莎D 波扎諾
葛列格里 布列塔
艾米尼A 迪西瓦
威廉D 海斯伯
瑞內 索理亞庫馬蕊
玲達K 山伯
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萬國商業機器公司
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Publication of TW201234104A publication Critical patent/TW201234104A/zh
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C39/00Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring
    • C07C39/24Halogenated derivatives
    • C07C39/42Halogenated derivatives containing six-membered aromatic rings and other rings
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/96Esters of carbonic or haloformic acids
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0381Macromolecular compounds which are rendered insoluble or differentially wettable using a combination of a phenolic resin and a polyoxyethylene resin
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00Systems containing at least three condensed rings
    • C07C2603/92Systems containing at least three condensed rings with a condensed ring system consisting of at least two mutually uncondensed aromatic ring systems, linked by an annular structure formed by carbon chains on non-adjacent positions of the aromatic system, e.g. cyclophanes

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
TW100141116A 2010-12-17 2011-11-10 含氟醇之分子光阻材料及其使用製程 TWI598683B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/971,292 US8530136B2 (en) 2010-12-17 2010-12-17 Fluoroalcohol containing molecular photoresist materials and processes of use

Publications (2)

Publication Number Publication Date
TW201234104A TW201234104A (en) 2012-08-16
TWI598683B true TWI598683B (zh) 2017-09-11

Family

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Family Applications (1)

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TW100141116A TWI598683B (zh) 2010-12-17 2011-11-10 含氟醇之分子光阻材料及其使用製程

Country Status (7)

Country Link
US (1) US8530136B2 (cg-RX-API-DMAC7.html)
EP (1) EP2651865B1 (cg-RX-API-DMAC7.html)
JP (1) JP5796237B2 (cg-RX-API-DMAC7.html)
KR (1) KR101531773B1 (cg-RX-API-DMAC7.html)
CN (1) CN103261137A (cg-RX-API-DMAC7.html)
TW (1) TWI598683B (cg-RX-API-DMAC7.html)
WO (1) WO2012079919A1 (cg-RX-API-DMAC7.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011043029A1 (ja) * 2009-10-06 2011-04-14 三菱瓦斯化学株式会社 環状化合物、その製造方法、感放射線性組成物およびレジストパターン形成方法
CN102666461B (zh) * 2009-11-27 2015-09-30 三菱瓦斯化学株式会社 环状化合物、其生产方法、放射线敏感性组合物和抗蚀图案形成方法
CN103752208A (zh) * 2014-01-28 2014-04-30 扬州大学 一种起泡剂和稳泡剂及其合成方法
WO2016190887A1 (en) 2015-05-28 2016-12-01 Intel Corporation A means to decouple the diffusion and solubility switch mechanisms of photoresists
KR102490291B1 (ko) * 2017-07-27 2023-01-20 디아이씨 가부시끼가이샤 레지스트 재료
CN108363275A (zh) * 2018-02-07 2018-08-03 江苏艾森半导体材料股份有限公司 一种用于oled阵列制造的正性光刻胶
CN108897192B (zh) * 2018-04-19 2022-04-05 中科院广州化学有限公司南雄材料生产基地 一种巯基-烯纳米压印光刻胶及其使用方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4189323A (en) 1977-04-25 1980-02-19 Hoechst Aktiengesellschaft Radiation-sensitive copying composition
EP0058638B1 (de) 1981-02-13 1985-08-28 Ciba-Geigy Ag Härtbare Zusammensetzung auf Basis eines säurehärtbaren Harzes und Verfahren zu dessen Härtung
JPH01293339A (ja) 1988-05-23 1989-11-27 Tosoh Corp フォトレジスト組成物
JP3116751B2 (ja) 1993-12-03 2000-12-11 ジェイエスアール株式会社 感放射線性樹脂組成物
JP3486341B2 (ja) 1997-09-18 2004-01-13 株式会社東芝 感光性組成物およびそれを用いたパターン形成法
JPH11217385A (ja) * 1998-01-30 1999-08-10 Nihon Schering Kk 含フッ素ポルフィリン錯体およびそれを含有する造影剤
US6093517A (en) 1998-07-31 2000-07-25 International Business Machines Corporation Calixarenes for use as dissolution inhibitors in lithographic photoresist compositions
EP1345080A3 (en) 2002-03-15 2004-02-04 Toyo Gosei Kogyo Co., Ltd. 1,2-Naphthoquinone-2-Diazidesulfonate Ester photosensitive agent, method for producing the photosensitive agent, and photoresist composition
JP2006208765A (ja) * 2005-01-28 2006-08-10 Matsushita Electric Ind Co Ltd レジスト材料及びそれを用いたパターン形成方法
WO2006129574A1 (ja) 2005-06-01 2006-12-07 Idemitsu Kosan Co., Ltd. カリックスレゾルシナレン化合物、並びに、それからなるフォトレジスト基材及びその組成物
US7781157B2 (en) 2006-07-28 2010-08-24 International Business Machines Corporation Method for using compositions containing fluorocarbinols in lithographic processes
KR101588903B1 (ko) 2006-11-02 2016-01-26 미츠비시 가스 가가쿠 가부시키가이샤 감방사선성 조성물
EP2297613B1 (en) 2008-05-23 2017-11-29 Cornell University Orthogonal processing of organic materials used in electronic and electrical devices

Also Published As

Publication number Publication date
EP2651865B1 (en) 2017-07-12
CN103261137A (zh) 2013-08-21
EP2651865A1 (en) 2013-10-23
KR101531773B1 (ko) 2015-06-25
WO2012079919A1 (en) 2012-06-21
TW201234104A (en) 2012-08-16
JP5796237B2 (ja) 2015-10-21
US20120156611A1 (en) 2012-06-21
KR20130122634A (ko) 2013-11-07
JP2014502646A (ja) 2014-02-03
US8530136B2 (en) 2013-09-10

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