TWI597757B - 使用掃描式電子顯微鏡之檢測系統 - Google Patents
使用掃描式電子顯微鏡之檢測系統 Download PDFInfo
- Publication number
- TWI597757B TWI597757B TW102119052A TW102119052A TWI597757B TW I597757 B TWI597757 B TW I597757B TW 102119052 A TW102119052 A TW 102119052A TW 102119052 A TW102119052 A TW 102119052A TW I597757 B TWI597757 B TW I597757B
- Authority
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- Taiwan
- Prior art keywords
- scanning electron
- electron microscope
- tested
- cavity
- detection system
- Prior art date
Links
- 238000007689 inspection Methods 0.000 title description 4
- 238000001514 detection method Methods 0.000 claims description 123
- 230000003287 optical effect Effects 0.000 claims description 34
- 239000002245 particle Substances 0.000 claims description 31
- 238000010894 electron beam technology Methods 0.000 claims description 17
- 238000012360 testing method Methods 0.000 claims description 5
- 239000012811 non-conductive material Substances 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 claims 1
- 238000005192 partition Methods 0.000 claims 1
- 230000003313 weakening effect Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 34
- 230000000694 effects Effects 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000035939 shock Effects 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
- H01J37/185—Means for transferring objects between different enclosures of different pressure or atmosphere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B21/00—Microscopes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24592—Inspection and quality control of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/2602—Details
- H01J2237/2605—Details operating at elevated pressures, e.g. atmosphere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020120057468A KR101914231B1 (ko) | 2012-05-30 | 2012-05-30 | 주사 전자 현미경을 이용한 검사 시스템 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201403652A TW201403652A (zh) | 2014-01-16 |
| TWI597757B true TWI597757B (zh) | 2017-09-01 |
Family
ID=48520797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102119052A TWI597757B (zh) | 2012-05-30 | 2013-05-30 | 使用掃描式電子顯微鏡之檢測系統 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8890067B2 (enExample) |
| EP (1) | EP2669927A3 (enExample) |
| JP (1) | JP6288951B2 (enExample) |
| KR (1) | KR101914231B1 (enExample) |
| CN (1) | CN103454295B (enExample) |
| TW (1) | TWI597757B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11152191B2 (en) | 2018-12-31 | 2021-10-19 | Asml Netherlands B.V. | In-lens wafer pre-charging and inspection with multiple beams |
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| KR102026936B1 (ko) * | 2013-03-26 | 2019-10-01 | 삼성디스플레이 주식회사 | 주사 전자 현미경을 이용한 검사 시스템 |
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| US9748294B2 (en) | 2014-01-10 | 2017-08-29 | Hamamatsu Photonics K.K. | Anti-reflection layer for back-illuminated sensor |
| KR20150107939A (ko) * | 2014-03-13 | 2015-09-24 | 참엔지니어링(주) | 시료 관찰 장치 |
| US9410901B2 (en) | 2014-03-17 | 2016-08-09 | Kla-Tencor Corporation | Image sensor, an inspection system and a method of inspecting an article |
| US9767986B2 (en) * | 2014-08-29 | 2017-09-19 | Kla-Tencor Corporation | Scanning electron microscope and methods of inspecting and reviewing samples |
| TWI573165B (zh) * | 2014-12-09 | 2017-03-01 | 財團法人工業技術研究院 | 電子顯微鏡、讀取器以及擷取元素頻譜之方法 |
| US9860466B2 (en) | 2015-05-14 | 2018-01-02 | Kla-Tencor Corporation | Sensor with electrically controllable aperture for inspection and metrology systems |
| US10748730B2 (en) | 2015-05-21 | 2020-08-18 | Kla-Tencor Corporation | Photocathode including field emitter array on a silicon substrate with boron layer |
| US10462391B2 (en) | 2015-08-14 | 2019-10-29 | Kla-Tencor Corporation | Dark-field inspection using a low-noise sensor |
| US11094502B2 (en) | 2015-12-24 | 2021-08-17 | Asml Netherlands B.V. | Method and apparatus for inspection |
| US10778925B2 (en) | 2016-04-06 | 2020-09-15 | Kla-Tencor Corporation | Multiple column per channel CCD sensor architecture for inspection and metrology |
| US10313622B2 (en) | 2016-04-06 | 2019-06-04 | Kla-Tencor Corporation | Dual-column-parallel CCD sensor and inspection systems using a sensor |
| KR102307522B1 (ko) * | 2016-05-10 | 2021-09-29 | 가부시키가이샤 스미카 분세키 센터 | 유기 전자 소자의 검사 방법 및 분석 방법, 그리고 그 이용 |
| CN106291899A (zh) * | 2016-09-29 | 2017-01-04 | 东方晶源微电子科技(北京)有限公司 | 照明模块、光学显微系统及电子束检测装置 |
| CN106770405A (zh) * | 2016-12-09 | 2017-05-31 | 清华大学 | 一种完全大气压下超光学衍射成像装置 |
| CN107116308B (zh) * | 2017-05-03 | 2019-01-04 | 湖北工业大学 | 波导微纳加工系统以及加工方法 |
| US10049904B1 (en) * | 2017-08-03 | 2018-08-14 | Applied Materials, Inc. | Method and system for moving a substrate |
| CN109975340A (zh) * | 2017-12-26 | 2019-07-05 | 上海梅山钢铁股份有限公司 | 镀铝锌板无铬钝化膜厚度的微观分析方法 |
| US11114489B2 (en) | 2018-06-18 | 2021-09-07 | Kla-Tencor Corporation | Back-illuminated sensor and a method of manufacturing a sensor |
| US10943760B2 (en) | 2018-10-12 | 2021-03-09 | Kla Corporation | Electron gun and electron microscope |
| KR20200062573A (ko) | 2018-11-27 | 2020-06-04 | 김창섭 | 디스펜서형 노즈워크 장난감 |
| US11114491B2 (en) | 2018-12-12 | 2021-09-07 | Kla Corporation | Back-illuminated sensor and a method of manufacturing a sensor |
| US11417492B2 (en) | 2019-09-26 | 2022-08-16 | Kla Corporation | Light modulated electron source |
| US11821860B2 (en) * | 2019-10-16 | 2023-11-21 | Carl Zeiss X-Ray Microscopy Inc. | Optical three-dimensional scanning for collision avoidance in microscopy system |
| US11848350B2 (en) | 2020-04-08 | 2023-12-19 | Kla Corporation | Back-illuminated sensor and a method of manufacturing a sensor using a silicon on insulator wafer |
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| JP2003217500A (ja) * | 2002-01-21 | 2003-07-31 | Sony Corp | 走査型電子顕微鏡を用いた検査装置 |
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| JP4945267B2 (ja) * | 2007-02-28 | 2012-06-06 | 株式会社日立ハイテクノロジーズ | 電子顕微鏡 |
| JP2009016073A (ja) * | 2007-07-02 | 2009-01-22 | Tokyo Seimitsu Co Ltd | 真空装置およびそのベーキング処理方法 |
| JP2009217049A (ja) * | 2008-03-11 | 2009-09-24 | Hoya Corp | 顕微鏡対物レンズおよび顕微鏡 |
| EP2105944A1 (en) * | 2008-03-28 | 2009-09-30 | FEI Company | Environmental cell for a particle-optical apparatus |
| JP2009252809A (ja) * | 2008-04-02 | 2009-10-29 | Hitachi High-Technologies Corp | ステージ装置及びステージ装置におけるステージの位置決め制御方法 |
| DE102008035770A1 (de) * | 2008-07-31 | 2010-02-18 | Eads Deutschland Gmbh | Optischer Partikeldetektor sowie Detektionsverfahren |
| KR20110076934A (ko) * | 2008-09-28 | 2011-07-06 | 비-나노 리미티드 | 진공 디바이스 및 주사 전자 현미경 |
| JP5690086B2 (ja) * | 2010-07-02 | 2015-03-25 | 株式会社キーエンス | 拡大観察装置 |
-
2012
- 2012-05-30 KR KR1020120057468A patent/KR101914231B1/ko active Active
-
2013
- 2013-05-28 JP JP2013112191A patent/JP6288951B2/ja active Active
- 2013-05-29 CN CN201310205662.8A patent/CN103454295B/zh active Active
- 2013-05-30 US US13/905,623 patent/US8890067B2/en active Active
- 2013-05-30 TW TW102119052A patent/TWI597757B/zh active
- 2013-05-30 EP EP13169847.4A patent/EP2669927A3/en not_active Ceased
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11152191B2 (en) | 2018-12-31 | 2021-10-19 | Asml Netherlands B.V. | In-lens wafer pre-charging and inspection with multiple beams |
| US12374524B2 (en) | 2018-12-31 | 2025-07-29 | Asml Netherlands B.V. | In-lens wafer PE-charging and inspection with multiple beams |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201403652A (zh) | 2014-01-16 |
| EP2669927A3 (en) | 2015-08-12 |
| US20130320211A1 (en) | 2013-12-05 |
| CN103454295B (zh) | 2017-12-29 |
| US8890067B2 (en) | 2014-11-18 |
| KR101914231B1 (ko) | 2018-11-02 |
| JP6288951B2 (ja) | 2018-03-07 |
| KR20130134160A (ko) | 2013-12-10 |
| JP2013251262A (ja) | 2013-12-12 |
| CN103454295A (zh) | 2013-12-18 |
| EP2669927A2 (en) | 2013-12-04 |
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