TWI594294B - 用於具有嵌入式掃描電子顯微鏡結構重疊目標的重疊之裝置相關量測 - Google Patents

用於具有嵌入式掃描電子顯微鏡結構重疊目標的重疊之裝置相關量測 Download PDF

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Publication number
TWI594294B
TWI594294B TW102132263A TW102132263A TWI594294B TW I594294 B TWI594294 B TW I594294B TW 102132263 A TW102132263 A TW 102132263A TW 102132263 A TW102132263 A TW 102132263A TW I594294 B TWI594294 B TW I594294B
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TW
Taiwan
Prior art keywords
periodic structure
layer
target
periodic
overlay
Prior art date
Application number
TW102132263A
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English (en)
Chinese (zh)
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TW201419377A (zh
Inventor
紐瑞爾 艾米爾
崔東燮
托爾 伊茲卡維奇
丹尼爾 堪德爾
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克萊譚克公司
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Application filed by 克萊譚克公司 filed Critical 克萊譚克公司
Publication of TW201419377A publication Critical patent/TW201419377A/zh
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Publication of TWI594294B publication Critical patent/TWI594294B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
TW102132263A 2012-09-06 2013-09-06 用於具有嵌入式掃描電子顯微鏡結構重疊目標的重疊之裝置相關量測 TWI594294B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261697503P 2012-09-06 2012-09-06
US13/776,550 US9093458B2 (en) 2012-09-06 2013-02-25 Device correlated metrology (DCM) for OVL with embedded SEM structure overlay targets

Publications (2)

Publication Number Publication Date
TW201419377A TW201419377A (zh) 2014-05-16
TWI594294B true TWI594294B (zh) 2017-08-01

Family

ID=50188111

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102132263A TWI594294B (zh) 2012-09-06 2013-09-06 用於具有嵌入式掃描電子顯微鏡結構重疊目標的重疊之裝置相關量測

Country Status (5)

Country Link
US (1) US9093458B2 (enExample)
JP (1) JP6320387B2 (enExample)
KR (1) KR102160840B1 (enExample)
TW (1) TWI594294B (enExample)
WO (1) WO2014039689A1 (enExample)

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102231730B1 (ko) * 2012-06-26 2021-03-24 케이엘에이 코포레이션 각도 분해형 반사율 측정에서의 스캐닝 및 광학 계측으로부터 회절의 알고리즘적 제거
US9506965B2 (en) * 2012-11-12 2016-11-29 United Microelectronics Corp. Alternately arranged overlay marks having asymmetric spacing and measurement thereof
US10698321B2 (en) 2012-11-21 2020-06-30 Kla-Tencor Corporation Process compatible segmented targets and design methods
JP6478974B2 (ja) 2013-04-10 2019-03-06 ケーエルエー−テンカー コーポレイション 標的設計及び製造における誘導自己組織化
US9740108B2 (en) * 2013-05-27 2017-08-22 Kla-Tencor Corporation Scatterometry overlay metrology targets and methods
WO2014194095A1 (en) 2013-05-30 2014-12-04 Kla-Tencor Corporation Combined imaging and scatterometry metrology
CN105408721B (zh) * 2013-06-27 2020-01-10 科磊股份有限公司 计量学目标的极化测量及对应的目标设计
US9726984B2 (en) * 2013-07-09 2017-08-08 Kla-Tencor Corporation Aperture alignment in scatterometry metrology systems
KR101906293B1 (ko) * 2014-02-21 2018-10-10 에이에스엠엘 네델란즈 비.브이. 타겟 배열 및 연계된 타겟의 최적화
US10415963B2 (en) * 2014-04-09 2019-09-17 Kla-Tencor Corporation Estimating and eliminating inter-cell process variation inaccuracy
WO2015157464A1 (en) * 2014-04-09 2015-10-15 Kla-Tencor Corporation Estimating and eliminating inter-cell process variation inaccuracy
KR20160007192A (ko) 2014-07-11 2016-01-20 삼성전자주식회사 오버레이 측정 방법, 오버레이 측정 시스템 및 이를 이용한 반도체 장치의 제조 방법
US10228320B1 (en) 2014-08-08 2019-03-12 KLA—Tencor Corporation Achieving a small pattern placement error in metrology targets
IL322724A (en) 2014-08-29 2025-10-01 Asml Netherlands Bv Metrological method, purpose and basis
WO2016083076A1 (en) 2014-11-26 2016-06-02 Asml Netherlands B.V. Metrology method, computer product and system
WO2016123552A1 (en) 2015-01-30 2016-08-04 Kla-Tencor Corporation Device metrology targets and methods
NL2016903A (en) * 2015-06-23 2016-12-29 Asml Netherlands Bv Lithographic Apparatus and Method
US9530199B1 (en) * 2015-07-13 2016-12-27 Applied Materials Israel Ltd Technique for measuring overlay between layers of a multilayer structure
US9659873B2 (en) 2015-08-26 2017-05-23 United Microelectronics Corp. Semiconductor structure with aligning mark and method of forming the same
EP3171396A1 (en) * 2015-11-18 2017-05-24 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Method of determining an overlay error, manufacturing method and system for manufacturing of a multilayer semiconductor device, and semiconductor device manufactured thereby
US9633915B1 (en) * 2016-03-01 2017-04-25 Globalfoundries Inc. Method of using dummy patterns for overlay target design and overlay control
CN117970750A (zh) 2016-03-03 2024-05-03 Asml荷兰有限公司 量测方法和光刻方法、光刻单元和计算机程序
US9754895B1 (en) 2016-03-07 2017-09-05 Micron Technology, Inc. Methods of forming semiconductor devices including determining misregistration between semiconductor levels and related apparatuses
US10761023B2 (en) * 2016-10-14 2020-09-01 Kla-Tencor Corporation Diffraction-based focus metrology
EP3339959A1 (en) * 2016-12-23 2018-06-27 ASML Netherlands B.V. Method of determining a position of a feature
US10409171B2 (en) * 2017-01-25 2019-09-10 Kla-Tencor Corporation Overlay control with non-zero offset prediction
TWI730050B (zh) * 2017-02-15 2021-06-11 聯華電子股份有限公司 層疊對準標記與評估製程穩定度的方法
US10732516B2 (en) * 2017-03-01 2020-08-04 Kla Tencor Corporation Process robust overlay metrology based on optical scatterometry
US11073487B2 (en) * 2017-05-11 2021-07-27 Kla-Tencor Corporation Methods and systems for characterization of an x-ray beam with high spatial resolution
CN107024841B (zh) * 2017-05-16 2018-09-25 睿力集成电路有限公司 一种光刻光学式叠对量测图型结构
US11112369B2 (en) * 2017-06-19 2021-09-07 Kla-Tencor Corporation Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay
US11085754B2 (en) * 2017-12-12 2021-08-10 Kla Corporation Enhancing metrology target information content
US10483214B2 (en) 2018-01-03 2019-11-19 Globalfoundries Inc. Overlay structures
WO2019139685A1 (en) * 2018-01-12 2019-07-18 Kla-Tencor Corporation Metrology targets and methods with oblique periodic structures
US10705435B2 (en) 2018-01-12 2020-07-07 Globalfoundries Inc. Self-referencing and self-calibrating interference pattern overlay measurement
US10533848B2 (en) * 2018-03-05 2020-01-14 Kla-Tencor Corporation Metrology and control of overlay and edge placement errors
KR20250011250A (ko) * 2018-12-31 2025-01-21 에이에스엠엘 네델란즈 비.브이. 스캐닝 하전 입자 현미경 교정 방법
US11075126B2 (en) 2019-02-15 2021-07-27 Kla-Tencor Corporation Misregistration measurements using combined optical and electron beam technology
WO2020167331A1 (en) * 2019-02-15 2020-08-20 Kla-Tencor Corporation Misregistration measurements using combined optical and electron beam technology
US10804170B2 (en) 2019-03-11 2020-10-13 Globalfoundries Inc. Device/health of line (HOL) aware eBeam based overlay (EBO OVL) structure
EP3909078B1 (en) 2019-06-27 2025-01-22 Yangtze Memory Technologies Co., Ltd. Marking pattern in forming staircase structure of three-dimensional memory device
US11914290B2 (en) * 2019-07-24 2024-02-27 Kla Corporation Overlay measurement targets design
US11256177B2 (en) 2019-09-11 2022-02-22 Kla Corporation Imaging overlay targets using Moiré elements and rotational symmetry arrangements
CN114342053B (zh) 2019-09-16 2025-05-16 科磊股份有限公司 周期性半导体装置偏移计量学系统及方法
US11809090B2 (en) * 2020-01-30 2023-11-07 Kla Corporation Composite overlay metrology target
EP4111495A4 (en) * 2020-04-15 2024-04-10 KLA Corporation MISREGISTRATION TARGET WITH DEVICE-SCALED FEATURES FOR MEASURING MISREGISTRATION OF SEMICONDUCTOR DEVICES
US11487929B2 (en) 2020-04-28 2022-11-01 Kla Corporation Target design process for overlay targets intended for multi-signal measurements
WO2021225587A1 (en) * 2020-05-06 2021-11-11 Kla Corporation Inter-step feedforward process control in the manufacture of semiconductor devices
US11686576B2 (en) 2020-06-04 2023-06-27 Kla Corporation Metrology target for one-dimensional measurement of periodic misregistration
US12100574B2 (en) * 2020-07-01 2024-09-24 Kla Corporation Target and algorithm to measure overlay by modeling back scattering electrons on overlapping structures
CN112015061A (zh) * 2020-08-27 2020-12-01 上海华力集成电路制造有限公司 一种套刻精度量测标记及其使用方法
US20230333485A1 (en) * 2020-09-28 2023-10-19 Asml Netherlands B.V. Target structure and associated methods and apparatus
EP4020084A1 (en) * 2020-12-22 2022-06-29 ASML Netherlands B.V. Metrology method
EP4053636A1 (en) * 2021-03-02 2022-09-07 ASML Netherlands B.V. Alignment method
US11862524B2 (en) 2021-06-28 2024-01-02 Kla Corporation Overlay mark design for electron beam overlay
CN113517178B (zh) * 2021-07-08 2023-06-27 长鑫存储技术有限公司 半导体结构的制备方法及半导体结构
US20230017392A1 (en) * 2021-07-15 2023-01-19 Changxin Memory Technologies, Inc. Measurement mark, measurement layout, and measurement method
EP4202552B1 (en) 2021-12-24 2024-04-17 Imec VZW Method and structure for determining an overlay error
US11796925B2 (en) 2022-01-03 2023-10-24 Kla Corporation Scanning overlay metrology using overlay targets having multiple spatial frequencies
US12032300B2 (en) 2022-02-14 2024-07-09 Kla Corporation Imaging overlay with mutually coherent oblique illumination
US12422363B2 (en) 2022-03-30 2025-09-23 Kla Corporation Scanning scatterometry overlay metrology
US12487190B2 (en) 2022-03-30 2025-12-02 Kla Corporation System and method for isolation of specific fourier pupil frequency in overlay metrology
US20240094639A1 (en) * 2022-09-19 2024-03-21 Kla Corporation High-resolution evaluation of optical metrology targets for process control
US12092966B2 (en) 2022-11-23 2024-09-17 Kla Corporation Device feature specific edge placement error (EPE)
US12235588B2 (en) 2023-02-16 2025-02-25 Kla Corporation Scanning overlay metrology with high signal to noise ratio
KR20250090013A (ko) 2023-12-12 2025-06-19 삼성전자주식회사 오버레이 기준 파장의 결정 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020080364A1 (en) * 2000-12-27 2002-06-27 Koninklijke Philips Electronics N.V. Method of measuring overlay
US6462818B1 (en) * 2000-06-22 2002-10-08 Kla-Tencor Corporation Overlay alignment mark design

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02112223A (ja) * 1988-10-21 1990-04-24 Olympus Optical Co Ltd アライメントマーク
US5805290A (en) 1996-05-02 1998-09-08 International Business Machines Corporation Method of optical metrology of unresolved pattern arrays
US6023338A (en) 1996-07-12 2000-02-08 Bareket; Noah Overlay alignment measurement of wafers
US5919714A (en) 1998-05-06 1999-07-06 Taiwan Semiconductor Manufacturing Company, Ltd. Segmented box-in-box for improving back end overlay measurement
US6128089A (en) 1998-07-28 2000-10-03 International Business Machines Corporation Combined segmented and nonsegmented bar-in-bar targets
DE19912971C1 (de) 1999-03-23 2000-09-21 Daimler Chrysler Ag Verfahren zur Erfassung der Lichtleistung einer Sendediode einer optischen Überwachungseinheit sowie geeignete Schaltungsanordnung
JP3344403B2 (ja) 2000-03-03 2002-11-11 日本電気株式会社 光学収差の測定用マスク及び光学収差の測定方法
US7068833B1 (en) 2000-08-30 2006-06-27 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US6486954B1 (en) 2000-09-01 2002-11-26 Kla-Tencor Technologies Corporation Overlay alignment measurement mark
US7009704B1 (en) 2000-10-26 2006-03-07 Kla-Tencor Technologies Corporation Overlay error detection
US7804994B2 (en) * 2002-02-15 2010-09-28 Kla-Tencor Technologies Corporation Overlay metrology and control method
US7141450B2 (en) 2002-04-08 2006-11-28 Lucent Technologies Inc. Flip-chip alignment method
DE10224164B4 (de) 2002-05-31 2007-05-10 Advanced Micro Devices, Inc., Sunnyvale Eine zweidimensionale Struktur zum Bestimmen einer Überlagerungsgenauigkeit mittels Streuungsmessung
SG125923A1 (en) * 2002-09-20 2006-10-30 Asml Netherlands Bv Lithographic marker structure, lithographic projection apparatus comprising such a lithographic marker structure and method for substrate alignment using such a lithographic marker structure
US7440105B2 (en) * 2002-12-05 2008-10-21 Kla-Tencor Technologies Corporation Continuously varying offset mark and methods of determining overlay
US7180593B2 (en) 2003-11-05 2007-02-20 Macronix International Co., Ltd. Overlay mark for aligning different layers on a semiconductor wafer
US20050286052A1 (en) * 2004-06-23 2005-12-29 Kevin Huggins Elongated features for improved alignment process integration
WO2007040855A1 (en) * 2005-09-30 2007-04-12 Advanced Micro Devices, Inc. Structure and method for simultaneously determining an overlay accuracy and pattern placement error
DE102005046973B4 (de) 2005-09-30 2014-01-30 Globalfoundries Inc. Struktur und Verfahren zum gleichzeitigen Bestimmen einer Überlagerungsgenauigkeit und eines Musteranordnungsfehlers
US7408642B1 (en) 2006-02-17 2008-08-05 Kla-Tencor Technologies Corporation Registration target design for managing both reticle grid error and wafer overlay
JP2008218516A (ja) * 2007-02-28 2008-09-18 Toshiba Corp パターン評価方法、評価マーク、それを用いた半導体装置の製造方法
NL1036123A1 (nl) * 2007-11-13 2009-05-14 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
US8148682B2 (en) * 2009-12-29 2012-04-03 Hitachi, Ltd. Method and apparatus for pattern position and overlay measurement
US9927718B2 (en) 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6462818B1 (en) * 2000-06-22 2002-10-08 Kla-Tencor Corporation Overlay alignment mark design
US20020080364A1 (en) * 2000-12-27 2002-06-27 Koninklijke Philips Electronics N.V. Method of measuring overlay

Also Published As

Publication number Publication date
US9093458B2 (en) 2015-07-28
US20140065736A1 (en) 2014-03-06
JP6320387B2 (ja) 2018-05-09
KR102160840B1 (ko) 2020-09-29
TW201419377A (zh) 2014-05-16
KR20150053770A (ko) 2015-05-18
JP2015532733A (ja) 2015-11-12
WO2014039689A1 (en) 2014-03-13

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