JP6320387B2 - 埋設sem構造オーバーレイ標的を用いたovlのためのデバイス相関計測法(dcm) - Google Patents
埋設sem構造オーバーレイ標的を用いたovlのためのデバイス相関計測法(dcm) Download PDFInfo
- Publication number
- JP6320387B2 JP6320387B2 JP2015531199A JP2015531199A JP6320387B2 JP 6320387 B2 JP6320387 B2 JP 6320387B2 JP 2015531199 A JP2015531199 A JP 2015531199A JP 2015531199 A JP2015531199 A JP 2015531199A JP 6320387 B2 JP6320387 B2 JP 6320387B2
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
- G03F7/70683—Mark designs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261697503P | 2012-09-06 | 2012-09-06 | |
| US61/697,503 | 2012-09-06 | ||
| US13/776,550 US9093458B2 (en) | 2012-09-06 | 2013-02-25 | Device correlated metrology (DCM) for OVL with embedded SEM structure overlay targets |
| US13/776,550 | 2013-02-25 | ||
| PCT/US2013/058278 WO2014039689A1 (en) | 2012-09-06 | 2013-09-05 | Device correlated metrology (dcm) for ovl with embedded sem structure overlay targets |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015532733A JP2015532733A (ja) | 2015-11-12 |
| JP2015532733A5 JP2015532733A5 (enExample) | 2017-06-22 |
| JP6320387B2 true JP6320387B2 (ja) | 2018-05-09 |
Family
ID=50188111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015531199A Active JP6320387B2 (ja) | 2012-09-06 | 2013-09-05 | 埋設sem構造オーバーレイ標的を用いたovlのためのデバイス相関計測法(dcm) |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9093458B2 (enExample) |
| JP (1) | JP6320387B2 (enExample) |
| KR (1) | KR102160840B1 (enExample) |
| TW (1) | TWI594294B (enExample) |
| WO (1) | WO2014039689A1 (enExample) |
Families Citing this family (65)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102330743B1 (ko) * | 2012-06-26 | 2021-11-23 | 케이엘에이 코포레이션 | 각도 분해형 반사율 측정에서의 스캐닝 및 광학 계측으로부터 회절의 알고리즘적 제거 |
| US9506965B2 (en) * | 2012-11-12 | 2016-11-29 | United Microelectronics Corp. | Alternately arranged overlay marks having asymmetric spacing and measurement thereof |
| KR20150087397A (ko) | 2012-11-21 | 2015-07-29 | 케이엘에이-텐코 코포레이션 | 프로세스 호환 세그먼팅된 타겟들 및 설계 방법들 |
| JP6478974B2 (ja) | 2013-04-10 | 2019-03-06 | ケーエルエー−テンカー コーポレイション | 標的設計及び製造における誘導自己組織化 |
| US9740108B2 (en) * | 2013-05-27 | 2017-08-22 | Kla-Tencor Corporation | Scatterometry overlay metrology targets and methods |
| WO2014194095A1 (en) | 2013-05-30 | 2014-12-04 | Kla-Tencor Corporation | Combined imaging and scatterometry metrology |
| CN105408721B (zh) | 2013-06-27 | 2020-01-10 | 科磊股份有限公司 | 计量学目标的极化测量及对应的目标设计 |
| US9726984B2 (en) * | 2013-07-09 | 2017-08-08 | Kla-Tencor Corporation | Aperture alignment in scatterometry metrology systems |
| JP6433504B2 (ja) * | 2014-02-21 | 2018-12-05 | エーエスエムエル ネザーランズ ビー.ブイ. | ターゲット構成の最適化及び関連するターゲット |
| KR102179990B1 (ko) * | 2014-04-09 | 2020-11-18 | 케이엘에이 코포레이션 | 셀간 프로세스 변동 부정확성의 추정 및 제거 |
| US10415963B2 (en) * | 2014-04-09 | 2019-09-17 | Kla-Tencor Corporation | Estimating and eliminating inter-cell process variation inaccuracy |
| KR20160007192A (ko) | 2014-07-11 | 2016-01-20 | 삼성전자주식회사 | 오버레이 측정 방법, 오버레이 측정 시스템 및 이를 이용한 반도체 장치의 제조 방법 |
| US10228320B1 (en) | 2014-08-08 | 2019-03-12 | KLA—Tencor Corporation | Achieving a small pattern placement error in metrology targets |
| IL322724A (en) | 2014-08-29 | 2025-10-01 | Asml Netherlands Bv | Metrological method, purpose and basis |
| CN110553602B (zh) | 2014-11-26 | 2021-10-26 | Asml荷兰有限公司 | 度量方法、计算机产品和系统 |
| WO2016123552A1 (en) * | 2015-01-30 | 2016-08-04 | Kla-Tencor Corporation | Device metrology targets and methods |
| JP2018523152A (ja) * | 2015-06-23 | 2018-08-16 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及び方法 |
| US9530199B1 (en) * | 2015-07-13 | 2016-12-27 | Applied Materials Israel Ltd | Technique for measuring overlay between layers of a multilayer structure |
| US9659873B2 (en) | 2015-08-26 | 2017-05-23 | United Microelectronics Corp. | Semiconductor structure with aligning mark and method of forming the same |
| EP3171396A1 (en) * | 2015-11-18 | 2017-05-24 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Method of determining an overlay error, manufacturing method and system for manufacturing of a multilayer semiconductor device, and semiconductor device manufactured thereby |
| US9633915B1 (en) * | 2016-03-01 | 2017-04-25 | Globalfoundries Inc. | Method of using dummy patterns for overlay target design and overlay control |
| KR102173439B1 (ko) | 2016-03-03 | 2020-11-04 | 에이에스엠엘 네델란즈 비.브이. | 계측 방법 및 리소그래피 방법, 리소그래피 셀 및 컴퓨터 프로그램 |
| US9754895B1 (en) | 2016-03-07 | 2017-09-05 | Micron Technology, Inc. | Methods of forming semiconductor devices including determining misregistration between semiconductor levels and related apparatuses |
| KR102234406B1 (ko) * | 2016-10-14 | 2021-03-31 | 케이엘에이 코포레이션 | 회절 기반의 포커스 메트롤로지 |
| EP3339959A1 (en) | 2016-12-23 | 2018-06-27 | ASML Netherlands B.V. | Method of determining a position of a feature |
| US10409171B2 (en) * | 2017-01-25 | 2019-09-10 | Kla-Tencor Corporation | Overlay control with non-zero offset prediction |
| TWI730050B (zh) * | 2017-02-15 | 2021-06-11 | 聯華電子股份有限公司 | 層疊對準標記與評估製程穩定度的方法 |
| US10732516B2 (en) * | 2017-03-01 | 2020-08-04 | Kla Tencor Corporation | Process robust overlay metrology based on optical scatterometry |
| US11073487B2 (en) * | 2017-05-11 | 2021-07-27 | Kla-Tencor Corporation | Methods and systems for characterization of an x-ray beam with high spatial resolution |
| CN107024841B (zh) * | 2017-05-16 | 2018-09-25 | 睿力集成电路有限公司 | 一种光刻光学式叠对量测图型结构 |
| US11112369B2 (en) * | 2017-06-19 | 2021-09-07 | Kla-Tencor Corporation | Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay |
| US11085754B2 (en) * | 2017-12-12 | 2021-08-10 | Kla Corporation | Enhancing metrology target information content |
| US10483214B2 (en) | 2018-01-03 | 2019-11-19 | Globalfoundries Inc. | Overlay structures |
| CN111542784B (zh) * | 2018-01-12 | 2025-05-06 | 科磊股份有限公司 | 具有倾斜周期性结构的计量目标及方法 |
| US10705435B2 (en) | 2018-01-12 | 2020-07-07 | Globalfoundries Inc. | Self-referencing and self-calibrating interference pattern overlay measurement |
| US10533848B2 (en) | 2018-03-05 | 2020-01-14 | Kla-Tencor Corporation | Metrology and control of overlay and edge placement errors |
| KR20210096226A (ko) * | 2018-12-31 | 2021-08-04 | 에이에스엠엘 네델란즈 비.브이. | 스캐닝 하전 입자 현미경 교정 방법 |
| CN113366619B (zh) * | 2019-02-15 | 2025-08-22 | 科磊股份有限公司 | 使用组合光学与电子束技术的偏移测量 |
| US11075126B2 (en) | 2019-02-15 | 2021-07-27 | Kla-Tencor Corporation | Misregistration measurements using combined optical and electron beam technology |
| US10804170B2 (en) | 2019-03-11 | 2020-10-13 | Globalfoundries Inc. | Device/health of line (HOL) aware eBeam based overlay (EBO OVL) structure |
| JP7302007B2 (ja) | 2019-06-27 | 2023-07-03 | 長江存儲科技有限責任公司 | 半導体デバイス、マーキングパターンおよび半導体デバイスの形成方法 |
| US11914290B2 (en) * | 2019-07-24 | 2024-02-27 | Kla Corporation | Overlay measurement targets design |
| US11256177B2 (en) | 2019-09-11 | 2022-02-22 | Kla Corporation | Imaging overlay targets using Moiré elements and rotational symmetry arrangements |
| CN114342053B (zh) | 2019-09-16 | 2025-05-16 | 科磊股份有限公司 | 周期性半导体装置偏移计量学系统及方法 |
| US11809090B2 (en) * | 2020-01-30 | 2023-11-07 | Kla Corporation | Composite overlay metrology target |
| US11532566B2 (en) | 2020-04-15 | 2022-12-20 | Kla Corporation | Misregistration target having device-scaled features useful in measuring misregistration of semiconductor devices |
| US11487929B2 (en) | 2020-04-28 | 2022-11-01 | Kla Corporation | Target design process for overlay targets intended for multi-signal measurements |
| US12393113B2 (en) * | 2020-05-06 | 2025-08-19 | Kla Corporation | Inter-step feedforward process control in the manufacture of semiconductor devices |
| US11686576B2 (en) | 2020-06-04 | 2023-06-27 | Kla Corporation | Metrology target for one-dimensional measurement of periodic misregistration |
| US12100574B2 (en) * | 2020-07-01 | 2024-09-24 | Kla Corporation | Target and algorithm to measure overlay by modeling back scattering electrons on overlapping structures |
| CN112015061A (zh) * | 2020-08-27 | 2020-12-01 | 上海华力集成电路制造有限公司 | 一种套刻精度量测标记及其使用方法 |
| WO2022064033A1 (en) * | 2020-09-28 | 2022-03-31 | Asml Netherlands B.V. | Target structure and associated methods and apparatus |
| EP4020084A1 (en) * | 2020-12-22 | 2022-06-29 | ASML Netherlands B.V. | Metrology method |
| EP4053636A1 (en) * | 2021-03-02 | 2022-09-07 | ASML Netherlands B.V. | Alignment method |
| US11862524B2 (en) | 2021-06-28 | 2024-01-02 | Kla Corporation | Overlay mark design for electron beam overlay |
| CN113517178B (zh) * | 2021-07-08 | 2023-06-27 | 长鑫存储技术有限公司 | 半导体结构的制备方法及半导体结构 |
| US20230017392A1 (en) * | 2021-07-15 | 2023-01-19 | Changxin Memory Technologies, Inc. | Measurement mark, measurement layout, and measurement method |
| EP4202552B1 (en) | 2021-12-24 | 2024-04-17 | Imec VZW | Method and structure for determining an overlay error |
| US11796925B2 (en) | 2022-01-03 | 2023-10-24 | Kla Corporation | Scanning overlay metrology using overlay targets having multiple spatial frequencies |
| US12032300B2 (en) | 2022-02-14 | 2024-07-09 | Kla Corporation | Imaging overlay with mutually coherent oblique illumination |
| US12422363B2 (en) | 2022-03-30 | 2025-09-23 | Kla Corporation | Scanning scatterometry overlay metrology |
| US12487190B2 (en) | 2022-03-30 | 2025-12-02 | Kla Corporation | System and method for isolation of specific fourier pupil frequency in overlay metrology |
| US20240094639A1 (en) * | 2022-09-19 | 2024-03-21 | Kla Corporation | High-resolution evaluation of optical metrology targets for process control |
| US12092966B2 (en) | 2022-11-23 | 2024-09-17 | Kla Corporation | Device feature specific edge placement error (EPE) |
| US12235588B2 (en) | 2023-02-16 | 2025-02-25 | Kla Corporation | Scanning overlay metrology with high signal to noise ratio |
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| JPH02112223A (ja) * | 1988-10-21 | 1990-04-24 | Olympus Optical Co Ltd | アライメントマーク |
| US5805290A (en) | 1996-05-02 | 1998-09-08 | International Business Machines Corporation | Method of optical metrology of unresolved pattern arrays |
| US6023338A (en) | 1996-07-12 | 2000-02-08 | Bareket; Noah | Overlay alignment measurement of wafers |
| US5919714A (en) | 1998-05-06 | 1999-07-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Segmented box-in-box for improving back end overlay measurement |
| US6128089A (en) | 1998-07-28 | 2000-10-03 | International Business Machines Corporation | Combined segmented and nonsegmented bar-in-bar targets |
| DE19912971C1 (de) | 1999-03-23 | 2000-09-21 | Daimler Chrysler Ag | Verfahren zur Erfassung der Lichtleistung einer Sendediode einer optischen Überwachungseinheit sowie geeignete Schaltungsanordnung |
| JP3344403B2 (ja) | 2000-03-03 | 2002-11-11 | 日本電気株式会社 | 光学収差の測定用マスク及び光学収差の測定方法 |
| US6462818B1 (en) * | 2000-06-22 | 2002-10-08 | Kla-Tencor Corporation | Overlay alignment mark design |
| US7068833B1 (en) | 2000-08-30 | 2006-06-27 | Kla-Tencor Corporation | Overlay marks, methods of overlay mark design and methods of overlay measurements |
| US6486954B1 (en) | 2000-09-01 | 2002-11-26 | Kla-Tencor Technologies Corporation | Overlay alignment measurement mark |
| US7009704B1 (en) | 2000-10-26 | 2006-03-07 | Kla-Tencor Technologies Corporation | Overlay error detection |
| TW526573B (en) * | 2000-12-27 | 2003-04-01 | Koninkl Philips Electronics Nv | Method of measuring overlay |
| US7804994B2 (en) * | 2002-02-15 | 2010-09-28 | Kla-Tencor Technologies Corporation | Overlay metrology and control method |
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| DE10224164B4 (de) | 2002-05-31 | 2007-05-10 | Advanced Micro Devices, Inc., Sunnyvale | Eine zweidimensionale Struktur zum Bestimmen einer Überlagerungsgenauigkeit mittels Streuungsmessung |
| TWI251722B (en) * | 2002-09-20 | 2006-03-21 | Asml Netherlands Bv | Device inspection |
| US7440105B2 (en) * | 2002-12-05 | 2008-10-21 | Kla-Tencor Technologies Corporation | Continuously varying offset mark and methods of determining overlay |
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| US20050286052A1 (en) * | 2004-06-23 | 2005-12-29 | Kevin Huggins | Elongated features for improved alignment process integration |
| WO2007040855A1 (en) * | 2005-09-30 | 2007-04-12 | Advanced Micro Devices, Inc. | Structure and method for simultaneously determining an overlay accuracy and pattern placement error |
| DE102005046973B4 (de) | 2005-09-30 | 2014-01-30 | Globalfoundries Inc. | Struktur und Verfahren zum gleichzeitigen Bestimmen einer Überlagerungsgenauigkeit und eines Musteranordnungsfehlers |
| US7408642B1 (en) | 2006-02-17 | 2008-08-05 | Kla-Tencor Technologies Corporation | Registration target design for managing both reticle grid error and wafer overlay |
| JP2008218516A (ja) * | 2007-02-28 | 2008-09-18 | Toshiba Corp | パターン評価方法、評価マーク、それを用いた半導体装置の製造方法 |
| NL1036123A1 (nl) * | 2007-11-13 | 2009-05-14 | Asml Netherlands Bv | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method. |
| US8148682B2 (en) * | 2009-12-29 | 2012-04-03 | Hitachi, Ltd. | Method and apparatus for pattern position and overlay measurement |
| US9927718B2 (en) | 2010-08-03 | 2018-03-27 | Kla-Tencor Corporation | Multi-layer overlay metrology target and complimentary overlay metrology measurement systems |
-
2013
- 2013-02-25 US US13/776,550 patent/US9093458B2/en active Active
- 2013-09-05 JP JP2015531199A patent/JP6320387B2/ja active Active
- 2013-09-05 WO PCT/US2013/058278 patent/WO2014039689A1/en not_active Ceased
- 2013-09-05 KR KR1020157008261A patent/KR102160840B1/ko active Active
- 2013-09-06 TW TW102132263A patent/TWI594294B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| US9093458B2 (en) | 2015-07-28 |
| WO2014039689A1 (en) | 2014-03-13 |
| KR20150053770A (ko) | 2015-05-18 |
| JP2015532733A (ja) | 2015-11-12 |
| TWI594294B (zh) | 2017-08-01 |
| TW201419377A (zh) | 2014-05-16 |
| KR102160840B1 (ko) | 2020-09-29 |
| US20140065736A1 (en) | 2014-03-06 |
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| A521 | Request for written amendment filed |
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