JP2015532733A5 - - Google Patents

Download PDF

Info

Publication number
JP2015532733A5
JP2015532733A5 JP2015531199A JP2015531199A JP2015532733A5 JP 2015532733 A5 JP2015532733 A5 JP 2015532733A5 JP 2015531199 A JP2015531199 A JP 2015531199A JP 2015531199 A JP2015531199 A JP 2015531199A JP 2015532733 A5 JP2015532733 A5 JP 2015532733A5
Authority
JP
Japan
Prior art keywords
periodic structure
layer
target
periodic
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2015531199A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015532733A (ja
JP6320387B2 (ja
Filing date
Publication date
Priority claimed from US13/776,550 external-priority patent/US9093458B2/en
Application filed filed Critical
Publication of JP2015532733A publication Critical patent/JP2015532733A/ja
Publication of JP2015532733A5 publication Critical patent/JP2015532733A5/ja
Application granted granted Critical
Publication of JP6320387B2 publication Critical patent/JP6320387B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2015531199A 2012-09-06 2013-09-05 埋設sem構造オーバーレイ標的を用いたovlのためのデバイス相関計測法(dcm) Active JP6320387B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261697503P 2012-09-06 2012-09-06
US61/697,503 2012-09-06
US13/776,550 US9093458B2 (en) 2012-09-06 2013-02-25 Device correlated metrology (DCM) for OVL with embedded SEM structure overlay targets
US13/776,550 2013-02-25
PCT/US2013/058278 WO2014039689A1 (en) 2012-09-06 2013-09-05 Device correlated metrology (dcm) for ovl with embedded sem structure overlay targets

Publications (3)

Publication Number Publication Date
JP2015532733A JP2015532733A (ja) 2015-11-12
JP2015532733A5 true JP2015532733A5 (enExample) 2017-06-22
JP6320387B2 JP6320387B2 (ja) 2018-05-09

Family

ID=50188111

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015531199A Active JP6320387B2 (ja) 2012-09-06 2013-09-05 埋設sem構造オーバーレイ標的を用いたovlのためのデバイス相関計測法(dcm)

Country Status (5)

Country Link
US (1) US9093458B2 (enExample)
JP (1) JP6320387B2 (enExample)
KR (1) KR102160840B1 (enExample)
TW (1) TWI594294B (enExample)
WO (1) WO2014039689A1 (enExample)

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102330743B1 (ko) * 2012-06-26 2021-11-23 케이엘에이 코포레이션 각도 분해형 반사율 측정에서의 스캐닝 및 광학 계측으로부터 회절의 알고리즘적 제거
US9506965B2 (en) * 2012-11-12 2016-11-29 United Microelectronics Corp. Alternately arranged overlay marks having asymmetric spacing and measurement thereof
KR102312241B1 (ko) 2012-11-21 2021-10-13 케이엘에이 코포레이션 프로세스 호환 세그먼팅된 타겟들 및 설계 방법들
KR102231731B1 (ko) 2013-04-10 2021-03-24 케이엘에이 코포레이션 타겟 설계 및 생산 시의 직접 자기 조립
WO2014193854A1 (en) * 2013-05-27 2014-12-04 Kla-Tencor Corporation Scatterometry overlay metrology targets and methods
WO2014194095A1 (en) 2013-05-30 2014-12-04 Kla-Tencor Corporation Combined imaging and scatterometry metrology
WO2014210381A1 (en) 2013-06-27 2014-12-31 Kla-Tencor Corporation Polarization measurements of metrology targets and corresponding target designs
WO2015006233A1 (en) * 2013-07-09 2015-01-15 Kla-Tencor Corporation Aperture alignment in scatterometry metrology systems
KR101906293B1 (ko) * 2014-02-21 2018-10-10 에이에스엠엘 네델란즈 비.브이. 타겟 배열 및 연계된 타겟의 최적화
KR102179990B1 (ko) * 2014-04-09 2020-11-18 케이엘에이 코포레이션 셀간 프로세스 변동 부정확성의 추정 및 제거
KR20160007192A (ko) 2014-07-11 2016-01-20 삼성전자주식회사 오버레이 측정 방법, 오버레이 측정 시스템 및 이를 이용한 반도체 장치의 제조 방법
US10228320B1 (en) 2014-08-08 2019-03-12 KLA—Tencor Corporation Achieving a small pattern placement error in metrology targets
IL310602B2 (en) 2014-08-29 2026-01-01 Asml Netherlands Bv Metrological method, purpose and basis
IL290735B2 (en) 2014-11-26 2023-03-01 Asml Netherlands Bv Metrological method, computer product and system
WO2016123552A1 (en) * 2015-01-30 2016-08-04 Kla-Tencor Corporation Device metrology targets and methods
NL2016903A (en) 2015-06-23 2016-12-29 Asml Netherlands Bv Lithographic Apparatus and Method
US9530199B1 (en) * 2015-07-13 2016-12-27 Applied Materials Israel Ltd Technique for measuring overlay between layers of a multilayer structure
US9659873B2 (en) 2015-08-26 2017-05-23 United Microelectronics Corp. Semiconductor structure with aligning mark and method of forming the same
EP3171396A1 (en) * 2015-11-18 2017-05-24 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Method of determining an overlay error, manufacturing method and system for manufacturing of a multilayer semiconductor device, and semiconductor device manufactured thereby
US9633915B1 (en) * 2016-03-01 2017-04-25 Globalfoundries Inc. Method of using dummy patterns for overlay target design and overlay control
US10831111B2 (en) 2016-03-03 2020-11-10 Asml Netherlands B.V. Metrology method and lithographic method, lithographic cell and computer program
US9754895B1 (en) 2016-03-07 2017-09-05 Micron Technology, Inc. Methods of forming semiconductor devices including determining misregistration between semiconductor levels and related apparatuses
WO2018071063A1 (en) * 2016-10-14 2018-04-19 Kla-Tencor Corporation Diffraction-based focus metrology
EP3339959A1 (en) * 2016-12-23 2018-06-27 ASML Netherlands B.V. Method of determining a position of a feature
US10409171B2 (en) * 2017-01-25 2019-09-10 Kla-Tencor Corporation Overlay control with non-zero offset prediction
TWI730050B (zh) * 2017-02-15 2021-06-11 聯華電子股份有限公司 層疊對準標記與評估製程穩定度的方法
US10732516B2 (en) * 2017-03-01 2020-08-04 Kla Tencor Corporation Process robust overlay metrology based on optical scatterometry
US11073487B2 (en) * 2017-05-11 2021-07-27 Kla-Tencor Corporation Methods and systems for characterization of an x-ray beam with high spatial resolution
CN107024841B (zh) * 2017-05-16 2018-09-25 睿力集成电路有限公司 一种光刻光学式叠对量测图型结构
US11112369B2 (en) * 2017-06-19 2021-09-07 Kla-Tencor Corporation Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay
US11085754B2 (en) * 2017-12-12 2021-08-10 Kla Corporation Enhancing metrology target information content
US10483214B2 (en) 2018-01-03 2019-11-19 Globalfoundries Inc. Overlay structures
US10705435B2 (en) 2018-01-12 2020-07-07 Globalfoundries Inc. Self-referencing and self-calibrating interference pattern overlay measurement
KR102408316B1 (ko) * 2018-01-12 2022-06-10 케이엘에이 코포레이션 경사진 주기적 구조물을 갖는 계측 타겟 및 방법
US10533848B2 (en) * 2018-03-05 2020-01-14 Kla-Tencor Corporation Metrology and control of overlay and edge placement errors
KR20210096226A (ko) 2018-12-31 2021-08-04 에이에스엠엘 네델란즈 비.브이. 스캐닝 하전 입자 현미경 교정 방법
KR102748454B1 (ko) * 2019-02-15 2024-12-30 케이엘에이 코포레이션 결합된 광학 및 전자빔 기술을 사용한 편심 측정
US10804170B2 (en) 2019-03-11 2020-10-13 Globalfoundries Inc. Device/health of line (HOL) aware eBeam based overlay (EBO OVL) structure
WO2020258116A1 (en) * 2019-06-27 2020-12-30 Yangtze Memory Technologies Co., Ltd. Marking pattern in forming staircase structure of three-dimensional memory device
US11914290B2 (en) 2019-07-24 2024-02-27 Kla Corporation Overlay measurement targets design
US11256177B2 (en) 2019-09-11 2022-02-22 Kla Corporation Imaging overlay targets using Moiré elements and rotational symmetry arrangements
JP7288144B2 (ja) 2019-09-16 2023-06-06 ケーエルエー コーポレイション 周期的半導体デバイス位置ずれ計量システム及び方法
US11809090B2 (en) * 2020-01-30 2023-11-07 Kla Corporation Composite overlay metrology target
CN115428139B (zh) * 2020-04-15 2024-04-12 科磊股份有限公司 可用于测量半导体装置偏移的具有装置级特征的偏移目标
US11487929B2 (en) 2020-04-28 2022-11-01 Kla Corporation Target design process for overlay targets intended for multi-signal measurements
WO2021225587A1 (en) * 2020-05-06 2021-11-11 Kla Corporation Inter-step feedforward process control in the manufacture of semiconductor devices
US11686576B2 (en) 2020-06-04 2023-06-27 Kla Corporation Metrology target for one-dimensional measurement of periodic misregistration
US12100574B2 (en) * 2020-07-01 2024-09-24 Kla Corporation Target and algorithm to measure overlay by modeling back scattering electrons on overlapping structures
CN112015061A (zh) * 2020-08-27 2020-12-01 上海华力集成电路制造有限公司 一种套刻精度量测标记及其使用方法
US20230333485A1 (en) * 2020-09-28 2023-10-19 Asml Netherlands B.V. Target structure and associated methods and apparatus
EP4020084A1 (en) * 2020-12-22 2022-06-29 ASML Netherlands B.V. Metrology method
EP4036646A1 (en) 2021-01-29 2022-08-03 ASML Netherlands B.V. Metrology methods and appratuses
EP4040233A1 (en) 2021-02-03 2022-08-10 ASML Netherlands B.V. A method of determining a measurement recipe and associated metrology methods and appratuses
EP4053636A1 (en) * 2021-03-02 2022-09-07 ASML Netherlands B.V. Alignment method
US11862524B2 (en) 2021-06-28 2024-01-02 Kla Corporation Overlay mark design for electron beam overlay
CN113517178B (zh) * 2021-07-08 2023-06-27 长鑫存储技术有限公司 半导体结构的制备方法及半导体结构
CN115616861B (zh) * 2021-07-15 2025-10-03 长鑫存储技术有限公司 一种量测标记、量测版图及量测方法
EP4202552B1 (en) 2021-12-24 2024-04-17 Imec VZW Method and structure for determining an overlay error
US11796925B2 (en) 2022-01-03 2023-10-24 Kla Corporation Scanning overlay metrology using overlay targets having multiple spatial frequencies
US12032300B2 (en) 2022-02-14 2024-07-09 Kla Corporation Imaging overlay with mutually coherent oblique illumination
US12487190B2 (en) 2022-03-30 2025-12-02 Kla Corporation System and method for isolation of specific fourier pupil frequency in overlay metrology
US12422363B2 (en) 2022-03-30 2025-09-23 Kla Corporation Scanning scatterometry overlay metrology
US20240069447A1 (en) * 2022-08-26 2024-02-29 Intel Corporation Buttressed field target design for optical and e-beam based metrology to enable first layer print registration measurements for field shape matching and reticle stitching in high na lithography
US20240094639A1 (en) * 2022-09-19 2024-03-21 Kla Corporation High-resolution evaluation of optical metrology targets for process control
US12669327B2 (en) 2022-11-23 2026-06-30 Kla Corporation System and method for suppression of tool induced shift in scanning overlay metrology
US12092966B2 (en) 2022-11-23 2024-09-17 Kla Corporation Device feature specific edge placement error (EPE)
US12235588B2 (en) 2023-02-16 2025-02-25 Kla Corporation Scanning overlay metrology with high signal to noise ratio
US12704790B2 (en) 2023-04-04 2026-08-11 Kla Corporation System and method for determining overlay measurement of a scanning target
KR20250090013A (ko) 2023-12-12 2025-06-19 삼성전자주식회사 오버레이 기준 파장의 결정 방법

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02112223A (ja) * 1988-10-21 1990-04-24 Olympus Optical Co Ltd アライメントマーク
US5805290A (en) 1996-05-02 1998-09-08 International Business Machines Corporation Method of optical metrology of unresolved pattern arrays
US6023338A (en) 1996-07-12 2000-02-08 Bareket; Noah Overlay alignment measurement of wafers
US5919714A (en) 1998-05-06 1999-07-06 Taiwan Semiconductor Manufacturing Company, Ltd. Segmented box-in-box for improving back end overlay measurement
US6128089A (en) 1998-07-28 2000-10-03 International Business Machines Corporation Combined segmented and nonsegmented bar-in-bar targets
DE19912971C1 (de) 1999-03-23 2000-09-21 Daimler Chrysler Ag Verfahren zur Erfassung der Lichtleistung einer Sendediode einer optischen Überwachungseinheit sowie geeignete Schaltungsanordnung
JP3344403B2 (ja) 2000-03-03 2002-11-11 日本電気株式会社 光学収差の測定用マスク及び光学収差の測定方法
US6462818B1 (en) * 2000-06-22 2002-10-08 Kla-Tencor Corporation Overlay alignment mark design
US7068833B1 (en) 2000-08-30 2006-06-27 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US6486954B1 (en) 2000-09-01 2002-11-26 Kla-Tencor Technologies Corporation Overlay alignment measurement mark
US7009704B1 (en) 2000-10-26 2006-03-07 Kla-Tencor Technologies Corporation Overlay error detection
TW526573B (en) * 2000-12-27 2003-04-01 Koninkl Philips Electronics Nv Method of measuring overlay
US7804994B2 (en) * 2002-02-15 2010-09-28 Kla-Tencor Technologies Corporation Overlay metrology and control method
US7141450B2 (en) 2002-04-08 2006-11-28 Lucent Technologies Inc. Flip-chip alignment method
DE10224164B4 (de) 2002-05-31 2007-05-10 Advanced Micro Devices, Inc., Sunnyvale Eine zweidimensionale Struktur zum Bestimmen einer Überlagerungsgenauigkeit mittels Streuungsmessung
TWI229243B (en) * 2002-09-20 2005-03-11 Asml Netherlands Bv Lithographic marker structure, lithographic projection apparatus comprising such a lithographic marker structure and method for substrate alignment using such a lithographic marker structure
US7440105B2 (en) * 2002-12-05 2008-10-21 Kla-Tencor Technologies Corporation Continuously varying offset mark and methods of determining overlay
US7180593B2 (en) 2003-11-05 2007-02-20 Macronix International Co., Ltd. Overlay mark for aligning different layers on a semiconductor wafer
US20050286052A1 (en) * 2004-06-23 2005-12-29 Kevin Huggins Elongated features for improved alignment process integration
WO2007040855A1 (en) * 2005-09-30 2007-04-12 Advanced Micro Devices, Inc. Structure and method for simultaneously determining an overlay accuracy and pattern placement error
DE102005046973B4 (de) 2005-09-30 2014-01-30 Globalfoundries Inc. Struktur und Verfahren zum gleichzeitigen Bestimmen einer Überlagerungsgenauigkeit und eines Musteranordnungsfehlers
US7408642B1 (en) 2006-02-17 2008-08-05 Kla-Tencor Technologies Corporation Registration target design for managing both reticle grid error and wafer overlay
JP2008218516A (ja) * 2007-02-28 2008-09-18 Toshiba Corp パターン評価方法、評価マーク、それを用いた半導体装置の製造方法
NL1036123A1 (nl) * 2007-11-13 2009-05-14 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
US8148682B2 (en) * 2009-12-29 2012-04-03 Hitachi, Ltd. Method and apparatus for pattern position and overlay measurement
US9927718B2 (en) 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems

Similar Documents

Publication Publication Date Title
JP6320387B2 (ja) 埋設sem構造オーバーレイ標的を用いたovlのためのデバイス相関計測法(dcm)
US9123649B1 (en) Fit-to-pitch overlay measurement targets
TWI851889B (zh) 可用於量測半導體裝置之偏移之具有裝置級特徵的偏移目標以及量測該偏移之方法
CN105511235B (zh) 套刻键标、形成套刻键标的方法和测量套刻精度的方法
JP2013153217A5 (enExample)
CN106469664A (zh) 绕射重迭标记
CN104777723B (zh) 套刻对准标记及套刻测量方法
US9244365B2 (en) Method for measuring pattern misalignment
CN103208483B (zh) 重叠标记及检查对准度的方法
CN104752410B (zh) 框中框重叠标记
JP2011238788A5 (enExample)
TWI487002B (zh) 對準標記及獲得晶圓之位置參考點的方法
TWI512868B (zh) Image Key Dimension Measurement Calibration Method and System
JP2011007626A (ja) パターン検査方法およびパターン検査装置
CN102543954B (zh) 套刻标记
Raid et al. Calibration of Ellipso-Height-Topometry with nanoscale gratings of varying materials
Eichelberger et al. Simultaneous dose and focus monitoring on product wafers
TWI760255B (zh) 半導體圖案化製程的檢測方法及檢測圖案單元
KR20150039456A (ko) 태그(teg) 패턴을 포함하는 표시 장치 및 태그 패턴을 이용한 식각 능력 검사 방법
CN101436580B (zh) 叠对量测结构及方法
US20190067203A1 (en) Semiconductor metrology target and manufacturing method thereof
CN102540737A (zh) 用于光刻机测试的套刻测试图形及光刻机的测试方法
CN106707697B (zh) 芯片的图形尺寸检测方法
KR100769148B1 (ko) 패턴크기 모니터링을 동시에 수행하기 위한 오버레이 마크 및 그 이용방법
US9281250B2 (en) Method of detecting an asymmetric portion of an overlay mark and method of measuring an overlay including the same