TWI591696B - 透明導電電路及透明導電電路之製造方法 - Google Patents
透明導電電路及透明導電電路之製造方法 Download PDFInfo
- Publication number
- TWI591696B TWI591696B TW105106099A TW105106099A TWI591696B TW I591696 B TWI591696 B TW I591696B TW 105106099 A TW105106099 A TW 105106099A TW 105106099 A TW105106099 A TW 105106099A TW I591696 B TWI591696 B TW I591696B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- transparent conductive
- etching
- less
- conductive oxide
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 141
- 238000005530 etching Methods 0.000 claims description 99
- 235000006408 oxalic acid Nutrition 0.000 claims description 47
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 28
- 229910052738 indium Inorganic materials 0.000 claims description 23
- 229910052749 magnesium Inorganic materials 0.000 claims description 19
- 229910052719 titanium Inorganic materials 0.000 claims description 18
- 239000000654 additive Substances 0.000 claims description 15
- 230000000996 additive effect Effects 0.000 claims description 15
- 239000012535 impurity Substances 0.000 claims description 9
- 229910052718 tin Inorganic materials 0.000 description 25
- 239000000243 solution Substances 0.000 description 22
- 239000010949 copper Substances 0.000 description 19
- 239000000758 substrate Substances 0.000 description 18
- 238000002834 transmittance Methods 0.000 description 15
- 229910052802 copper Inorganic materials 0.000 description 14
- 239000007788 liquid Substances 0.000 description 14
- 239000002184 metal Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 13
- 230000000007 visual effect Effects 0.000 description 13
- 229910052787 antimony Inorganic materials 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 238000005477 sputtering target Methods 0.000 description 10
- 229910052725 zinc Inorganic materials 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- 238000004220 aggregation Methods 0.000 description 5
- 230000002776 aggregation Effects 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000399 optical microscopy Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018137 Al-Zn Inorganic materials 0.000 description 1
- 229910018573 Al—Zn Inorganic materials 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910018725 Sn—Al Inorganic materials 0.000 description 1
- 229910007610 Zn—Sn Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000005097 cold rolling Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000010327 methods by industry Methods 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 235000014347 soups Nutrition 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 230000016776 visual perception Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015037950 | 2015-02-27 | ||
| JP2015217683 | 2015-11-05 | ||
| JP2016034768A JP6020750B1 (ja) | 2015-02-27 | 2016-02-25 | 透明導電配線、及び、透明導電配線の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201703150A TW201703150A (zh) | 2017-01-16 |
| TWI591696B true TWI591696B (zh) | 2017-07-11 |
Family
ID=57216895
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105106099A TWI591696B (zh) | 2015-02-27 | 2016-02-26 | 透明導電電路及透明導電電路之製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6020750B1 (ko) |
| KR (1) | KR101777549B1 (ko) |
| CN (1) | CN106796885B (ko) |
| TW (1) | TWI591696B (ko) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6350754B1 (ja) * | 2017-01-20 | 2018-07-04 | 凸版印刷株式会社 | 表示装置及び表示装置基板 |
| CN108520856A (zh) * | 2018-05-18 | 2018-09-11 | 中国科学院微电子研究所 | 一种ito薄膜的图案化方法 |
| JP2020090708A (ja) | 2018-12-05 | 2020-06-11 | 三菱マテリアル株式会社 | 金属膜、及び、スパッタリングターゲット |
| KR102134287B1 (ko) * | 2020-01-30 | 2020-07-15 | 주식회사 비와이인더스트리 | 벨트 컨베이어의 언로딩 스크래퍼장치 |
| KR102659176B1 (ko) | 2020-12-28 | 2024-04-23 | 삼성디스플레이 주식회사 | 은 함유 박막의 식각 조성물, 이를 이용한 패턴 형성 방법 및 표시장치의 제조 방법 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2839829B2 (ja) * | 1993-10-18 | 1998-12-16 | 株式会社東芝 | 透明導電膜、その形成方法および透明導電膜の加工方法 |
| JP2985763B2 (ja) * | 1995-03-22 | 1999-12-06 | 凸版印刷株式会社 | 多層導電膜、並びにこれを用いた透明電極板および液晶表示装置 |
| JPH11302876A (ja) * | 1998-04-16 | 1999-11-02 | Nippon Sheet Glass Co Ltd | 透明導電膜の電極パターン加工方法 |
| US7272008B2 (en) * | 2004-03-09 | 2007-09-18 | Intec, Inc. | Portable power inverter with pass through device |
| JP2005250191A (ja) * | 2004-03-05 | 2005-09-15 | Idemitsu Kosan Co Ltd | 半透過・半反射電極基板、及びその製造方法、及びその半透過・半反射電極基板を用いた液晶表示装置 |
| JP2006216266A (ja) | 2005-02-01 | 2006-08-17 | Kitagawa Ind Co Ltd | 透明導電フィルム |
| JP4773145B2 (ja) | 2005-06-30 | 2011-09-14 | アルバック成膜株式会社 | 増反射膜付きＡｇ又はＡｇ合金反射電極膜及びその製造方法 |
| JP2008080743A (ja) | 2006-09-28 | 2008-04-10 | Optrex Corp | タッチパネル装置 |
| JP4957584B2 (ja) | 2008-02-29 | 2012-06-20 | 東ソー株式会社 | エッチング用組成物及びエッチング方法 |
| JP2012054006A (ja) | 2010-08-31 | 2012-03-15 | Gunze Ltd | 透明導電性ガスバリヤフィルム及びその製造方法 |
| JP5488849B2 (ja) * | 2011-06-24 | 2014-05-14 | 三菱マテリアル株式会社 | 導電性膜およびその製造方法並びにこれに用いるスパッタリングターゲット |
| JP2015030896A (ja) * | 2013-08-05 | 2015-02-16 | 出光興産株式会社 | スパッタリングターゲット及び酸化物透明導電膜 |
-
2016
- 2016-02-25 JP JP2016034768A patent/JP6020750B1/ja active Active
- 2016-02-26 CN CN201680002259.7A patent/CN106796885B/zh active Active
- 2016-02-26 TW TW105106099A patent/TWI591696B/zh active
- 2016-02-26 KR KR1020177004671A patent/KR101777549B1/ko active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| CN106796885A (zh) | 2017-05-31 |
| TW201703150A (zh) | 2017-01-16 |
| KR20170030642A (ko) | 2017-03-17 |
| CN106796885B (zh) | 2018-04-20 |
| KR101777549B1 (ko) | 2017-09-11 |
| JP2017091491A (ja) | 2017-05-25 |
| JP6020750B1 (ja) | 2016-11-02 |
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