TWI590458B - 多閘極薄膜電晶體 - Google Patents
多閘極薄膜電晶體 Download PDFInfo
- Publication number
- TWI590458B TWI590458B TW102125604A TW102125604A TWI590458B TW I590458 B TWI590458 B TW I590458B TW 102125604 A TW102125604 A TW 102125604A TW 102125604 A TW102125604 A TW 102125604A TW I590458 B TWI590458 B TW I590458B
- Authority
- TW
- Taiwan
- Prior art keywords
- gate electrode
- semiconductor layer
- control signal
- charge
- conductive
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
- H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
Landscapes
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/557,039 US9105728B2 (en) | 2012-07-24 | 2012-07-24 | Multi-gate thin-film transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201413962A TW201413962A (zh) | 2014-04-01 |
| TWI590458B true TWI590458B (zh) | 2017-07-01 |
Family
ID=48874539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102125604A TWI590458B (zh) | 2012-07-24 | 2013-07-17 | 多閘極薄膜電晶體 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9105728B2 (enExample) |
| JP (1) | JP5946966B2 (enExample) |
| KR (1) | KR101662733B1 (enExample) |
| CN (1) | CN104508829B (enExample) |
| TW (1) | TWI590458B (enExample) |
| WO (1) | WO2014018282A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010056541A (ja) * | 2008-07-31 | 2010-03-11 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| EP2887692B1 (en) * | 2013-12-20 | 2019-07-10 | Valencell, Inc. | A fitting system for a headphone with physiological sensor |
| IN2014DE00708A (enExample) * | 2014-03-12 | 2015-09-18 | Indian Inst Technology Kanpur | |
| US20150366678A1 (en) * | 2014-06-20 | 2015-12-24 | Fillauer Llc | Modular forearm |
| JP6276871B2 (ja) * | 2015-06-26 | 2018-02-07 | サビック グローバル テクノロジーズ ビー．ブイ． | タッチ入力および触覚フィードバック用途のための一体型圧電カンチレバーアクチュエータ・トランジスタ |
| GB201819570D0 (en) * | 2018-11-30 | 2019-01-16 | Univ Surrey | Multiple-gate transistor |
| KR102879031B1 (ko) | 2020-01-15 | 2025-10-29 | 삼성전자주식회사 | 반도체 소자 및 이의 제조 방법 |
| US11469321B2 (en) | 2020-02-27 | 2022-10-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device |
| WO2023224594A1 (en) * | 2022-05-16 | 2023-11-23 | OLEDWorks LLC | Segmented oled with electrostatic discharge protection |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0682834A (ja) * | 1992-09-02 | 1994-03-25 | Fuji Xerox Co Ltd | アクティブマトリクスパネル |
| US5929464A (en) | 1995-01-20 | 1999-07-27 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix electro-optical device |
| JP3409542B2 (ja) | 1995-11-21 | 2003-05-26 | ソニー株式会社 | 半導体装置の製造方法 |
| TW463384B (en) | 2000-06-15 | 2001-11-11 | Shr Min | Thin film transistor having subgate and Schottky source/drain and the manufacturing method thereof |
| US6580633B2 (en) | 2000-09-28 | 2003-06-17 | Seiko Epson Corporation | Nonvolatile semiconductor memory device |
| KR100485531B1 (ko) * | 2002-04-15 | 2005-04-27 | 엘지.필립스 엘시디 주식회사 | 다결정 실리콘 박막트랜지스터와 그 제조방법 |
| CN100449779C (zh) | 2002-10-07 | 2009-01-07 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| US7800675B2 (en) | 2004-08-25 | 2010-09-21 | Aptina Imaging Corporation | Method of operating a storage gate pixel |
| KR100614653B1 (ko) | 2004-11-18 | 2006-08-22 | 삼성전자주식회사 | 백점 및 오버플로우의 문제없이 글로벌 노출이 가능한씨모스 이미지 센서 및 그 제조 방법 |
| KR100790586B1 (ko) | 2006-05-25 | 2008-01-02 | (주) 픽셀플러스 | Ｃｍｏｓ 이미지 센서 액티브 픽셀 및 그 신호 감지 방법 |
| US7459755B2 (en) | 2006-05-25 | 2008-12-02 | Walker Andrew J | Dual-gate semiconductor devices with enhanced scalability |
| US8102443B2 (en) | 2007-03-13 | 2012-01-24 | Renesas Electronics Corporation | CCD image sensor having charge storage section between photodiode section and charge transfer section |
| US20090072313A1 (en) * | 2007-09-19 | 2009-03-19 | International Business Machines Corporation | Hardened transistors in soi devices |
| US20120153289A1 (en) * | 2009-09-01 | 2012-06-21 | Sharp Kabushiki Kaisha | Semiconductor device, active matrix substrate, and display device |
| KR101056229B1 (ko) | 2009-10-12 | 2011-08-11 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를 구비하는 유기전계발광 표시 장치 |
| DE102010002455B4 (de) | 2010-02-26 | 2017-06-01 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Nichtflüchtiger Speichertransistor und Verfahren zu dessen Herstellung |
-
2012
- 2012-07-24 US US13/557,039 patent/US9105728B2/en active Active
-
2013
- 2013-07-12 KR KR1020157004151A patent/KR101662733B1/ko not_active Expired - Fee Related
- 2013-07-12 JP JP2015524306A patent/JP5946966B2/ja not_active Expired - Fee Related
- 2013-07-12 WO PCT/US2013/050273 patent/WO2014018282A1/en not_active Ceased
- 2013-07-12 CN CN201380038720.0A patent/CN104508829B/zh not_active Expired - Fee Related
- 2013-07-17 TW TW102125604A patent/TWI590458B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CN104508829B (zh) | 2016-10-26 |
| JP5946966B2 (ja) | 2016-07-06 |
| WO2014018282A1 (en) | 2014-01-30 |
| KR101662733B1 (ko) | 2016-10-06 |
| US20140027758A1 (en) | 2014-01-30 |
| JP2015524618A (ja) | 2015-08-24 |
| US9105728B2 (en) | 2015-08-11 |
| KR20150034273A (ko) | 2015-04-02 |
| TW201413962A (zh) | 2014-04-01 |
| CN104508829A (zh) | 2015-04-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |