CN104508829B - 多栅极薄膜晶体管 - Google Patents

多栅极薄膜晶体管 Download PDF

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Publication number
CN104508829B
CN104508829B CN201380038720.0A CN201380038720A CN104508829B CN 104508829 B CN104508829 B CN 104508829B CN 201380038720 A CN201380038720 A CN 201380038720A CN 104508829 B CN104508829 B CN 104508829B
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CN
China
Prior art keywords
gate electrode
semiconductor layer
control signal
conductive
response
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201380038720.0A
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English (en)
Chinese (zh)
Other versions
CN104508829A (zh
Inventor
约翰·贤哲·洪
金天弘
冯子青
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Electronics AG
Original Assignee
Qualcomm MEMS Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm MEMS Technologies Inc filed Critical Qualcomm MEMS Technologies Inc
Publication of CN104508829A publication Critical patent/CN104508829A/zh
Application granted granted Critical
Publication of CN104508829B publication Critical patent/CN104508829B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes

Landscapes

  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CN201380038720.0A 2012-07-24 2013-07-12 多栅极薄膜晶体管 Expired - Fee Related CN104508829B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/557,039 US9105728B2 (en) 2012-07-24 2012-07-24 Multi-gate thin-film transistor
US13/557,039 2012-07-24
PCT/US2013/050273 WO2014018282A1 (en) 2012-07-24 2013-07-12 Multi-gate thin-film transistor

Publications (2)

Publication Number Publication Date
CN104508829A CN104508829A (zh) 2015-04-08
CN104508829B true CN104508829B (zh) 2016-10-26

Family

ID=48874539

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380038720.0A Expired - Fee Related CN104508829B (zh) 2012-07-24 2013-07-12 多栅极薄膜晶体管

Country Status (6)

Country Link
US (1) US9105728B2 (enExample)
JP (1) JP5946966B2 (enExample)
KR (1) KR101662733B1 (enExample)
CN (1) CN104508829B (enExample)
TW (1) TWI590458B (enExample)
WO (1) WO2014018282A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010056541A (ja) * 2008-07-31 2010-03-11 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
EP2887692B1 (en) * 2013-12-20 2019-07-10 Valencell, Inc. A fitting system for a headphone with physiological sensor
IN2014DE00708A (enExample) * 2014-03-12 2015-09-18 Indian Inst Technology Kanpur
US20150366678A1 (en) * 2014-06-20 2015-12-24 Fillauer Llc Modular forearm
JP6276871B2 (ja) * 2015-06-26 2018-02-07 サビック グローバル テクノロジーズ ビー．ブイ． タッチ入力および触覚フィードバック用途のための一体型圧電カンチレバーアクチュエータ・トランジスタ
GB201819570D0 (en) * 2018-11-30 2019-01-16 Univ Surrey Multiple-gate transistor
KR102879031B1 (ko) 2020-01-15 2025-10-29 삼성전자주식회사 반도체 소자 및 이의 제조 방법
US11469321B2 (en) 2020-02-27 2022-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device
WO2023224594A1 (en) * 2022-05-16 2023-11-23 OLEDWorks LLC Segmented oled with electrostatic discharge protection

Citations (7)

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US5834797A (en) * 1995-11-21 1998-11-10 Sony Corporation Transistor having first and second gate electrodes
CN1452250A (zh) * 2002-04-15 2003-10-29 Lg.飞利浦Lcd有限公司 多晶硅薄膜晶体管及其制造方法
CN1494164A (zh) * 2002-10-07 2004-05-05 ��ʽ����뵼����Դ�о��� 半导体器件及其制造方法
WO2007140081A2 (en) * 2006-05-25 2007-12-06 Walker Andrew J Dual-gate semiconductor devices with enhance scalability
WO2007139255A1 (en) * 2006-05-25 2007-12-06 Pixelplus Co., Ltd. Image sensor active pixel and method for sensing signal thereof
CN101393909A (zh) * 2007-09-19 2009-03-25 国际商业机器公司 串联晶体管器件和反相器电路
US7800675B2 (en) * 2004-08-25 2010-09-21 Aptina Imaging Corporation Method of operating a storage gate pixel

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JPH0682834A (ja) * 1992-09-02 1994-03-25 Fuji Xerox Co Ltd アクティブマトリクスパネル
US5929464A (en) 1995-01-20 1999-07-27 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-optical device
TW463384B (en) 2000-06-15 2001-11-11 Shr Min Thin film transistor having subgate and Schottky source/drain and the manufacturing method thereof
US6580633B2 (en) 2000-09-28 2003-06-17 Seiko Epson Corporation Nonvolatile semiconductor memory device
KR100614653B1 (ko) 2004-11-18 2006-08-22 삼성전자주식회사 백점 및 오버플로우의 문제없이 글로벌 노출이 가능한씨모스 이미지 센서 및 그 제조 방법
US8102443B2 (en) 2007-03-13 2012-01-24 Renesas Electronics Corporation CCD image sensor having charge storage section between photodiode section and charge transfer section
US20120153289A1 (en) * 2009-09-01 2012-06-21 Sharp Kabushiki Kaisha Semiconductor device, active matrix substrate, and display device
KR101056229B1 (ko) 2009-10-12 2011-08-11 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를 구비하는 유기전계발광 표시 장치
DE102010002455B4 (de) 2010-02-26 2017-06-01 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Nichtflüchtiger Speichertransistor und Verfahren zu dessen Herstellung

Patent Citations (8)

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Publication number Priority date Publication date Assignee Title
US6146927A (en) * 1995-10-16 2000-11-14 Sony Corporation Semiconductor device, manufacturing method therefor and liquid crystal driving apparatus comprising the semiconductor device
US5834797A (en) * 1995-11-21 1998-11-10 Sony Corporation Transistor having first and second gate electrodes
CN1452250A (zh) * 2002-04-15 2003-10-29 Lg.飞利浦Lcd有限公司 多晶硅薄膜晶体管及其制造方法
CN1494164A (zh) * 2002-10-07 2004-05-05 ��ʽ����뵼����Դ�о��� 半导体器件及其制造方法
US7800675B2 (en) * 2004-08-25 2010-09-21 Aptina Imaging Corporation Method of operating a storage gate pixel
WO2007140081A2 (en) * 2006-05-25 2007-12-06 Walker Andrew J Dual-gate semiconductor devices with enhance scalability
WO2007139255A1 (en) * 2006-05-25 2007-12-06 Pixelplus Co., Ltd. Image sensor active pixel and method for sensing signal thereof
CN101393909A (zh) * 2007-09-19 2009-03-25 国际商业机器公司 串联晶体管器件和反相器电路

Also Published As

Publication number Publication date
JP5946966B2 (ja) 2016-07-06
WO2014018282A1 (en) 2014-01-30
KR101662733B1 (ko) 2016-10-06
US20140027758A1 (en) 2014-01-30
JP2015524618A (ja) 2015-08-24
US9105728B2 (en) 2015-08-11
TWI590458B (zh) 2017-07-01
KR20150034273A (ko) 2015-04-02
TW201413962A (zh) 2014-04-01
CN104508829A (zh) 2015-04-08

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Legal Events

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C06 Publication
PB01 Publication
EXSB Decision made by sipo to initiate substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20161018

Address after: California, USA

Patentee after: EPCOS AG

Address before: California, USA

Patentee before: QUALCOMM MEMS TECHNOLOGIES, Inc.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20161026