KR101662733B1 - 멀티-게이트 박막 트랜지스터 - Google Patents

멀티-게이트 박막 트랜지스터 Download PDF

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Publication number
KR101662733B1
KR101662733B1 KR1020157004151A KR20157004151A KR101662733B1 KR 101662733 B1 KR101662733 B1 KR 101662733B1 KR 1020157004151 A KR1020157004151 A KR 1020157004151A KR 20157004151 A KR20157004151 A KR 20157004151A KR 101662733 B1 KR101662733 B1 KR 101662733B1
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South Korea
Prior art keywords
gate electrode
semiconductor layer
control signal
charge
response
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Expired - Fee Related
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KR1020157004151A
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English (en)
Korean (ko)
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KR20150034273A (ko
Inventor
존 현철 홍
천홍 김
체-칭 펑
Original Assignee
퀄컴 엠이엠에스 테크놀로지스, 인크.
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Publication of KR20150034273A publication Critical patent/KR20150034273A/ko
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    • H01L29/78645—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H01L29/78606—
    • H01L29/78618—
    • H01L29/78648—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H01L2924/13069—

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  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020157004151A 2012-07-24 2013-07-12 멀티-게이트 박막 트랜지스터 Expired - Fee Related KR101662733B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/557,039 US9105728B2 (en) 2012-07-24 2012-07-24 Multi-gate thin-film transistor
US13/557,039 2012-07-24
PCT/US2013/050273 WO2014018282A1 (en) 2012-07-24 2013-07-12 Multi-gate thin-film transistor

Publications (2)

Publication Number Publication Date
KR20150034273A KR20150034273A (ko) 2015-04-02
KR101662733B1 true KR101662733B1 (ko) 2016-10-06

Family

ID=48874539

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157004151A Expired - Fee Related KR101662733B1 (ko) 2012-07-24 2013-07-12 멀티-게이트 박막 트랜지스터

Country Status (6)

Country Link
US (1) US9105728B2 (enExample)
JP (1) JP5946966B2 (enExample)
KR (1) KR101662733B1 (enExample)
CN (1) CN104508829B (enExample)
TW (1) TWI590458B (enExample)
WO (1) WO2014018282A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010056541A (ja) * 2008-07-31 2010-03-11 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
EP2887692B1 (en) * 2013-12-20 2019-07-10 Valencell, Inc. A fitting system for a headphone with physiological sensor
IN2014DE00708A (enExample) * 2014-03-12 2015-09-18 Indian Inst Technology Kanpur
US20150366678A1 (en) * 2014-06-20 2015-12-24 Fillauer Llc Modular forearm
JP6276871B2 (ja) * 2015-06-26 2018-02-07 サビック グローバル テクノロジーズ ビー．ブイ． タッチ入力および触覚フィードバック用途のための一体型圧電カンチレバーアクチュエータ・トランジスタ
GB201819570D0 (en) * 2018-11-30 2019-01-16 Univ Surrey Multiple-gate transistor
KR102879031B1 (ko) 2020-01-15 2025-10-29 삼성전자주식회사 반도체 소자 및 이의 제조 방법
US11469321B2 (en) 2020-02-27 2022-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device
WO2023224594A1 (en) * 2022-05-16 2023-11-23 OLEDWorks LLC Segmented oled with electrostatic discharge protection

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020009833A1 (en) 2000-06-15 2002-01-24 Horng-Chih Lin Thin film transistor with sub-gates and schottky source/drain and a manufacturing method of the same
US20030194839A1 (en) 2002-04-15 2003-10-16 Lg.Philips Lcd Co. Ltd. Polycrystalline silicon thin film transistor and method for fabricating the same
WO2007140081A2 (en) 2006-05-25 2007-12-06 Walker Andrew J Dual-gate semiconductor devices with enhance scalability

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JPH0682834A (ja) * 1992-09-02 1994-03-25 Fuji Xerox Co Ltd アクティブマトリクスパネル
US5929464A (en) 1995-01-20 1999-07-27 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-optical device
JP3409542B2 (ja) 1995-11-21 2003-05-26 ソニー株式会社 半導体装置の製造方法
US6580633B2 (en) 2000-09-28 2003-06-17 Seiko Epson Corporation Nonvolatile semiconductor memory device
CN100449779C (zh) 2002-10-07 2009-01-07 株式会社半导体能源研究所 半导体器件及其制造方法
US7800675B2 (en) 2004-08-25 2010-09-21 Aptina Imaging Corporation Method of operating a storage gate pixel
KR100614653B1 (ko) 2004-11-18 2006-08-22 삼성전자주식회사 백점 및 오버플로우의 문제없이 글로벌 노출이 가능한씨모스 이미지 센서 및 그 제조 방법
KR100790586B1 (ko) 2006-05-25 2008-01-02 (주) 픽셀플러스 Ｃｍｏｓ 이미지 센서 액티브 픽셀 및 그 신호 감지 방법
US8102443B2 (en) 2007-03-13 2012-01-24 Renesas Electronics Corporation CCD image sensor having charge storage section between photodiode section and charge transfer section
US20090072313A1 (en) * 2007-09-19 2009-03-19 International Business Machines Corporation Hardened transistors in soi devices
US20120153289A1 (en) * 2009-09-01 2012-06-21 Sharp Kabushiki Kaisha Semiconductor device, active matrix substrate, and display device
KR101056229B1 (ko) 2009-10-12 2011-08-11 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를 구비하는 유기전계발광 표시 장치
DE102010002455B4 (de) 2010-02-26 2017-06-01 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Nichtflüchtiger Speichertransistor und Verfahren zu dessen Herstellung

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020009833A1 (en) 2000-06-15 2002-01-24 Horng-Chih Lin Thin film transistor with sub-gates and schottky source/drain and a manufacturing method of the same
US20030194839A1 (en) 2002-04-15 2003-10-16 Lg.Philips Lcd Co. Ltd. Polycrystalline silicon thin film transistor and method for fabricating the same
WO2007140081A2 (en) 2006-05-25 2007-12-06 Walker Andrew J Dual-gate semiconductor devices with enhance scalability

Also Published As

Publication number Publication date
CN104508829B (zh) 2016-10-26
JP5946966B2 (ja) 2016-07-06
WO2014018282A1 (en) 2014-01-30
US20140027758A1 (en) 2014-01-30
JP2015524618A (ja) 2015-08-24
US9105728B2 (en) 2015-08-11
TWI590458B (zh) 2017-07-01
KR20150034273A (ko) 2015-04-02
TW201413962A (zh) 2014-04-01
CN104508829A (zh) 2015-04-08

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