TWI589420B - Metal multilayer ceramic substrate breaking method and trench processing tools - Google Patents
Metal multilayer ceramic substrate breaking method and trench processing tools Download PDFInfo
- Publication number
- TWI589420B TWI589420B TW102114555A TW102114555A TWI589420B TW I589420 B TWI589420 B TW I589420B TW 102114555 A TW102114555 A TW 102114555A TW 102114555 A TW102114555 A TW 102114555A TW I589420 B TWI589420 B TW I589420B
- Authority
- TW
- Taiwan
- Prior art keywords
- ceramic substrate
- metal film
- laminated
- substrate
- laminated ceramic
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0017—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
- H05K3/0052—Depaneling, i.e. dividing a panel into circuit boards; Working of the edges of circuit boards
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Description
本發明係關於一種於陶瓷基板積層有金屬膜之積層陶瓷基板之分斷方法及溝槽加工用工具。 The present invention relates to a method for separating a laminated ceramic substrate in which a metal film is laminated on a ceramic substrate, and a tool for processing a groove.
先前，於將於陶瓷基板積層有金屬膜之積層陶瓷基板分斷之情形時，使用晶圓切割機等進行分斷之情況較多。又，專利文獻1中提出有於將陶瓷基板刻劃之後接合金屬層，藉由蝕刻而去除劃線之金屬層之後進行折斷之陶瓷接合基板之製造方法。 In the case where the laminated ceramic substrate in which the metal film is laminated on the ceramic substrate is divided, the wafer cutting machine or the like is often used for the separation. Further, Patent Document 1 proposes a method of manufacturing a ceramic bonded substrate in which a metal substrate is bonded after the ceramic substrate is bonded, and the metal layer of the scribe line is removed by etching.
[先行技術文獻] [Advanced technical literature]
[專利文獻] [Patent Literature]
[專利文獻1]日本專利特開2009一252971號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2009-252971
上述專利文獻1中存在如下問題點：必須於陶瓷基板積層金屬薄膜之前進行刻劃，無法將已經積層之積層陶瓷基板分斷。 The above Patent Document 1 has a problem in that it is necessary to perform scribe before the metal substrate is laminated on the ceramic substrate, and it is not possible to divide the laminated ceramic substrate which has been laminated.
又，為了將經積層之積層陶瓷基板分斷，如圖1(a)所示，對將於陶瓷基板101積層有金屬膜102之積層基板100刻劃後進行折斷之情 形進行說明。首先，如圖1(b)所示，於陶瓷基板101之面利用刻劃輪103進行刻劃，如圖1(c)所示，自陶瓷基板101側利用折斷棒104按壓而進行折斷。於該情形時，由於即便陶瓷基板101可分離而金屬膜102不會分離，故如圖1(d)所示，存在即便實施折斷而金屬膜102不分離導致殘存，無法進行完全之分斷之問題點。 Further, in order to separate the laminated ceramic substrate, as shown in FIG. 1(a), the laminated substrate 100 in which the metal film 102 is laminated on the ceramic substrate 101 is scribed and then broken. The shape is explained. First, as shown in FIG. 1(b), the surface of the ceramic substrate 101 is scribed by the scribing wheel 103, and as shown in FIG. 1(c), the broken portion of the ceramic substrate 101 is pressed by the breaking bar 104 to be broken. In this case, even if the ceramic substrate 101 can be separated and the metal film 102 is not separated, as shown in FIG. 1(d), even if the metal film 102 is not separated, the metal film 102 remains, and the complete separation cannot be performed. Problems.
又，作為其他方法，如圖2(a)、(b)所示，對積層陶瓷基板100之中金屬膜102之面使用刻劃輪103實施刻劃。繼而，如圖2(c)所示，即便欲使用折斷棒104將積層陶瓷基板分斷，而於金屬膜102未形成充分之垂直裂痕，於陶瓷基板101側未產生垂直裂痕。因此，存在折斷困難，無法分離，或者如圖2(d)所示無法按照劃線分離之問題點。 Further, as another method, as shown in FIGS. 2(a) and 2(b), the surface of the metal film 102 in the laminated ceramic substrate 100 is scored using the scribing wheel 103. Then, as shown in FIG. 2(c), even if the laminated ceramic substrate is to be broken by the breaking bar 104, a sufficient vertical crack is not formed in the metal film 102, and no vertical crack is generated on the side of the ceramic substrate 101. Therefore, there is a problem that it is difficult to break, and it is impossible to separate, or it is impossible to separate according to the scribe line as shown in Fig. 2(d).
本發明係鑒於如此之問題點而完成者，其目的在於可將於陶瓷基板積層有金屬膜之積層陶瓷基板完全分斷而個別化。 The present invention has been made in view of such a problem, and an object thereof is to form a ceramic substrate in which a metal film is laminated on a ceramic substrate to be completely separated and individualized.
為了解決該課題，本發明之積層陶瓷基板之分斷方法係於陶瓷基板積層有金屬膜之積層陶瓷基板之分斷方法，沿著上述積層陶瓷基板之刻劃預定線利用圖案化工具對金屬膜進行溝槽加工，沿著去除上述金屬膜之溝槽自上述陶瓷基板之面進行刻劃，使上述積層陶瓷基板與刻劃線一致而進行折斷。 In order to solve the problem, the method for dividing a laminated ceramic substrate according to the present invention is a method for dividing a laminated ceramic substrate in which a metal film is laminated on a ceramic substrate, and a metal film is patterned by a patterning tool along a predetermined line of the laminated ceramic substrate. The groove processing is performed, and the groove on which the metal film is removed is scribed from the surface of the ceramic substrate, and the laminated ceramic substrate is folded in accordance with the scribe line.
為了解決該課題，本發明之積層陶瓷基板之分斷方法係於陶瓷基板積層有金屬膜之積層陶瓷基板之分斷方法，沿著上述積層陶瓷基板之刻劃預定線自上述陶瓷基板之面進行刻劃，沿著上述陶瓷基板之劃線自上述金屬膜之面對金屬膜利用圖案化工具進行溝槽加工，使上述積層陶瓷基板與上述劃線一致而進行折斷。 In order to solve the problem, the method for dividing a laminated ceramic substrate according to the present invention is a method for dividing a laminated ceramic substrate in which a metal film is laminated on a ceramic substrate, and is formed from a surface of the ceramic substrate along a predetermined line of the laminated ceramic substrate. The scribe line is grooved from the facing metal film of the metal film along the metal substrate by a patterning tool, and the laminated ceramic substrate is folded in accordance with the scribe line.
為了解決該課題，本發明之積層陶瓷基板之分斷方法係於陶瓷基板積層有金屬膜之積層陶瓷基板之分斷方法，沿著上述陶瓷基板之刻 劃預定線對金屬膜利用圖案化工具進行溝槽加工，自上述金屬膜之面沿著去除金屬膜之溝槽對上述陶瓷基板轉動刻劃輪而進行刻劃，與上述積層陶瓷基板之劃線一致而進行折斷。 In order to solve the problem, the method for dividing a laminated ceramic substrate of the present invention is a method for dividing a ceramic substrate in which a metal film is laminated on a ceramic substrate, along the ceramic substrate. The metal film is grooved by a patterning tool, and the surface of the metal film is scribed by rotating the scribe wheel on the surface of the metal film along the groove for removing the metal film, and the scribe line of the laminated ceramic substrate Break in unison.
本發明之溝槽加工用工具，例如，係如上所述之積層陶瓷基板之分斷方法中可使用之用以將金屬膜積層陶瓷基板之金屬膜之一部分去除而進行溝槽加工之溝槽加工用工具，且刀尖為(a)圓錐台形狀、(b)角柱狀或(c)將角柱狀之左右切開之形狀之任一形狀。 The groove processing tool of the present invention is, for example, a groove processing for removing a part of a metal film of a metal film laminated ceramic substrate by using a method of dividing a laminated ceramic substrate as described above. The tool is used, and the blade tip has any shape such as (a) a truncated cone shape, (b) a corner column shape, or (c) a shape in which the corner column shape is cut left and right.
此處，上述陶瓷基板之刻劃亦可為使用有刻劃輪之刻劃。 Here, the scribing of the ceramic substrate may be a scribing using a scribing wheel.
根據具有如此之特徵之本發明，將於陶瓷基板積層有金屬膜之積層陶瓷基板沿著刻劃預定線進行溝槽加工，而將金屬膜帶狀地去除。而且，自陶瓷基板之面或自去除之金屬膜之溝槽刻劃陶瓷基板，然後，使積層陶瓷基板反轉而進行折斷。因此，可獲得可避免金屬膜之剝離，可完全分斷為所期望之形狀而個別化，可使端面精度提高之效果。 According to the invention having such a feature, the laminated ceramic substrate in which the metal film is laminated on the ceramic substrate is subjected to groove processing along the line to be scribed, and the metal film is removed in a strip shape. Further, the ceramic substrate is scribed from the surface of the ceramic substrate or the groove of the removed metal film, and then the laminated ceramic substrate is reversed and fractured. Therefore, it is possible to obtain an effect that the peeling of the metal film can be avoided, the individual shape can be completely divided into a desired shape, and the end surface precision can be improved.
10‧‧‧積層陶瓷基板 10‧‧‧Multilayer ceramic substrate
11‧‧‧陶瓷基板 11‧‧‧Ceramic substrate
12‧‧‧金屬膜 12‧‧‧Metal film
12a‧‧‧溝槽 12a‧‧‧ trench
13、14‧‧‧刻劃輪 13, 14‧‧‧ marking wheel
15、16‧‧‧支撐構件 15, 16‧‧‧Support members
17‧‧‧膠帶 17‧‧‧ Tape
18‧‧‧折斷棒 18‧‧‧Broken rod
圖1係表示自積層陶瓷基板之陶瓷基板側刻劃及折斷之情形時之分斷處理的圖。 Fig. 1 is a view showing a breaking process in the case where the ceramic substrate side of the laminated ceramic substrate is scored and broken.
圖2係表示自積層陶瓷基板之金屬膜側刻劃而進行折斷時之狀態之圖。 Fig. 2 is a view showing a state in which the metal film side of the laminated ceramic substrate is scribed and broken.
圖3係表示本發明之第1實施形態之積層陶瓷基板之分斷處理(溝槽加工及刻劃)的圖。 Fig. 3 is a view showing a breaking process (groove processing and scribing) of the multilayer ceramic substrate according to the first embodiment of the present invention.
圖4係表示本發明之第1實施形態之積層陶瓷基板之分斷處理(折斷)的圖。 Fig. 4 is a view showing a breaking process (breaking) of the laminated ceramic substrate according to the first embodiment of the present invention.
圖5係表示本發明之第2實施形態之積層陶瓷基板之分斷處理(溝槽加工及刻劃)的圖。 Fig. 5 is a view showing a breaking process (groove processing and scribing) of the laminated ceramic substrate according to the second embodiment of the present invention.
圖6係表示本發明之第2實施形態之積層陶瓷基板之分斷處理(折斷) 的圖。 Fig. 6 is a view showing the breaking process (breaking) of the laminated ceramic substrate according to the second embodiment of the present invention; Figure.
圖7係表示本實施形態中所使用之金屬膜之溝槽加工所使用之圖案化工具的圖。 Fig. 7 is a view showing a patterning tool used for groove processing of a metal film used in the embodiment.
圖3(a)係表示於陶瓷基板11形成有金屬膜12之成為分斷之對象之積層陶瓷基板(以下，簡稱為積層基板)10的圖。此處，陶瓷基板11既可為LTCC(Low-Temperature Co-fired Ceramic，低溫共燒多層陶瓷)基板，亦可為氧化鋁或氮化鋁、鈦酸鋇、氮化矽等之陶瓷基板。又，金屬膜12為鎳、銀、金、銅及鉑等之薄膜，例如膜厚為10~20 μm。此時，金屬膜12亦可為形成有某些圖案者。於將如此之積層基板10以特定之圖案分斷之情形時，首先，如圖3(b)所示，自陶瓷基板11側沿著刻劃預定線，利用圖案化工具去除金屬膜12。該金屬膜之去除係使用例如用作太陽能電池之溝槽加工工具之刻劃裝置，例如日本專利特開2011-216646號之刻劃裝置將金屬膜12之一部分直線狀地使用圖案化工具13而去除。此時之剖面圖如圖3(c)所示。該溝槽12a之寬度例如為25~200 μm之寬度。此時之圖案化工具13亦可如圖7(a)所示為圓錐台形狀之工具。又，如圖7(b)所示，既可為刀尖為角柱狀之工具，進而，如圖7(c)所示，亦可為將角柱狀之左右切開之形狀之工具。又，不僅工具之前端而且全體亦可為角柱狀。 (a) of FIG. 3 is a view showing a laminated ceramic substrate (hereinafter simply referred to as a laminated substrate) 10 in which the metal film 12 is formed on the ceramic substrate 11 to be separated. Here, the ceramic substrate 11 may be a LTCC (Low-Temperature Co-fired Ceramic) substrate, or may be a ceramic substrate such as alumina or aluminum nitride, barium titanate or tantalum nitride. Further, the metal film 12 is a film of nickel, silver, gold, copper or platinum, and has a film thickness of, for example, 10 to 20 μm. At this time, the metal film 12 may also be formed with some patterns. When the laminated substrate 10 is divided by a specific pattern, first, as shown in FIG. 3(b), the metal film 12 is removed by a patterning tool from the side of the ceramic substrate 11 along the scribed line. The metal film is removed using, for example, a dicing device used as a groove processing tool for a solar cell. For example, the scribe device of Japanese Patent Laid-Open No. 2011-216646 uses a portion of the metal film 12 linearly using the patterning tool 13 Remove. The cross-sectional view at this time is shown in Figure 3(c). The width of the groove 12a is, for example, a width of 25 to 200 μm. The patterning tool 13 at this time may also be a tool of a truncated cone shape as shown in Fig. 7(a). Further, as shown in Fig. 7(b), the tool may be a tool having a corner-shaped column shape, and further, as shown in Fig. 7(c), a tool having a shape in which a corner column shape is cut left and right may be used. Moreover, not only the front end of the tool but also the entire column may be a corner column.
然後，使形成有溝槽之積層基板10如圖3(d)般反轉沿著刻劃預定線對陶瓷基板11進行刻劃。該刻劃係藉由未圖示之刻劃裝置而以固定之荷重按壓刻劃輪14並使之轉動以使裂痕垂直地浸透之方式形成劃線S1。較佳為該刻劃所使用之刻劃輪係使用可進行高浸透之刻劃者。例如，如日本專利文獻3074143號所示，提出有於圓周面隔開特定間隔而形成多數 之溝槽，使其間作為突起形成為高浸透型之刻劃輪。 Then, the laminated substrate 10 on which the grooves are formed is inscribed with respect to the ceramic substrate 11 along the line to be scribed as shown in FIG. 3(d). This scribing is performed by a scribing device (not shown) to press the scribing wheel 14 with a fixed load and rotate it so that the crack penetrates vertically. Preferably, the scoring wheel used in the scoring uses a scoring that is highly permeable. For example, as shown in Japanese Patent Laid-Open No. 3074143, it is proposed to form a majority at a predetermined interval on the circumferential surface. The groove is formed as a protrusion of the high-impregnation type as a protrusion.
繼而，如圖4(e)所示，使積層基板10反轉，於折斷裝置之一對之支撐構件15、16之上表面配置膠帶17，並以於支撐構件15、16之中間定位有劃線之方式配置積層基板10。然後，自其上部沿著劃線S1按下折斷棒18而進行折斷。若如此，則如圖4(f)所示，可將積層基板沿著劃線完全分斷，可使端面精度提高。藉由格子狀地進行該積層陶瓷基板之分斷而可形成個別之積層基板晶片。 Then, as shown in FIG. 4(e), the laminated substrate 10 is reversed, and the tape 17 is disposed on the upper surface of the support members 15, 16 on one of the breaking means, and is positioned in the middle of the supporting members 15, 16. The laminated substrate 10 is disposed in a line manner. Then, the breaking bar 18 is pressed from the upper portion along the scribe line S1 to be broken. In this way, as shown in FIG. 4(f), the laminated substrate can be completely separated along the scribe line, and the end surface accuracy can be improved. An individual laminated substrate wafer can be formed by dividing the laminated ceramic substrate in a lattice shape.
再者，該實施形態中，圖3(d)之步驟中使用刻劃裝置轉動刻劃輪而執行刻劃，但亦可藉由雷射刻劃裝置而進行刻劃。又，圖4(e)之步驟中使用折斷裝置進行折斷，但代替此於分斷之小片之形狀比較大之情形時，作業者亦可直接用手進行分斷。於該情形時不需要膠帶17。 Further, in this embodiment, in the step of (d) of FIG. 3, the scoring device is used to rotate the scoring wheel to perform scribing, but the scoring device may perform scribing. Further, in the step of Fig. 4(e), the breaking device is used for breaking, but instead of the case where the shape of the small piece is relatively large, the operator can directly break the hand by hand. In this case, the tape 17 is not required.
又，該實施形態中，如圖3(b)、(c)所示對金屬膜進行溝槽加工，繼而使之反轉對陶瓷面進行刻劃，但亦可為先對陶瓷面進行刻劃，然後對金屬膜進行溝槽加工。 Further, in this embodiment, as shown in Figs. 3(b) and 3(c), the metal film is grooved, and then the ceramic surface is reversed, but the ceramic surface may be first scribed. Then, the metal film is grooved.
<第2實施形態> <Second embodiment>
圖5(a)係表示於陶瓷基板11形成有金屬膜12之成為分斷之對象之積層陶瓷基板(以下，簡稱為積層基板)10的圖。此處，陶瓷基板11既可為LTCC基板，亦可為氧化鋁或氮化鋁、鈦酸鋇、氮化矽等之陶瓷基板。又，金屬膜12為鎳、銀、金、銅及鉑等之薄膜，例如膜厚為10~20 μm。此時，金屬膜12亦可為形成有某些圖案者。於將如此之積層基板10以特定之圖案分斷之情形時，首先，如圖5(b)所示，自陶瓷基板11側沿著刻劃預定線，利用圖案化工具以固定寬度去除金屬膜12。該金屬膜之去除係使用例如用作太陽能電池之溝槽加工工具之刻劃裝置，例如日本專利特開2011-216646號之刻劃裝置將金屬膜12之一部分直線狀地使用圖案化工具13而去除。此時之剖面圖如圖5(c)所示。該溝槽12a之寬度例如為25~ 200 μm之寬度。此時之圖案化工具13亦可如圖7(a)所示為圓錐台形狀之工具。又，如圖7(b)所示，既可為刀尖為角柱狀之工具，進而，如圖7(c)所示，亦可為將角柱狀之左右切開之形狀之工具。又，不僅工具之前端而且全體亦可為角柱狀。 (a) of FIG. 5 is a view showing a laminated ceramic substrate (hereinafter simply referred to as a laminated substrate) 10 in which the metal film 12 is formed on the ceramic substrate 11 to be separated. Here, the ceramic substrate 11 may be an LTCC substrate, or may be a ceramic substrate such as alumina or aluminum nitride, barium titanate or tantalum nitride. Further, the metal film 12 is a film of nickel, silver, gold, copper or platinum, and has a film thickness of, for example, 10 to 20 μm. At this time, the metal film 12 may also be formed with some patterns. In the case where the laminated substrate 10 is divided by a specific pattern, first, as shown in FIG. 5(b), the metal film is removed by a patterning tool along a predetermined line from the side of the ceramic substrate 11 by a patterning tool. 12. The metal film is removed using, for example, a dicing device used as a groove processing tool for a solar cell. For example, the scribe device of Japanese Patent Laid-Open No. 2011-216646 uses a portion of the metal film 12 linearly using the patterning tool 13 Remove. The cross-sectional view at this time is shown in Fig. 5(c). The width of the trench 12a is, for example, 25~ Width of 200 μm. The patterning tool 13 at this time may also be a tool of a truncated cone shape as shown in Fig. 7(a). Further, as shown in Fig. 7(b), the tool may be a tool having a corner-shaped column shape, and further, as shown in Fig. 7(c), a tool having a shape in which a corner column shape is cut left and right may be used. Moreover, not only the front end of the tool but also the entire column may be a corner column.
然後，對自經形成之金屬膜12之面去除金屬膜之帶狀之溝槽12a之內側之陶瓷基板11進行刻劃。該刻劃係藉由未圖示之刻劃裝置而以固定之荷重按壓刻劃輪14並使之轉動以使裂痕垂直地浸透之方式形成劃線S1。較佳為該刻劃所使用之刻劃輪係使用可進行高浸透之刻劃者。例如，如日本專利文獻3074143號所示，提出有於圓周面隔開特定間隔而形成多數之溝槽，使其間作為突起形成為高浸透型之刻劃輪。 Then, the ceramic substrate 11 on the inner side of the strip-shaped groove 12a from which the metal film is removed from the surface of the formed metal film 12 is scribed. This scribing is performed by a scribing device (not shown) to press the scribing wheel 14 with a fixed load and rotate it so that the crack penetrates vertically. Preferably, the scoring wheel used in the scoring uses a scoring that is highly permeable. For example, as shown in Japanese Patent Laid-Open No. 3074143, it is proposed to form a groove having a plurality of grooves formed at a predetermined interval on the circumferential surface so as to form a high-permeation type scoring wheel as a protrusion.
繼而，如圖6(e)所示，使積層基板10反轉，於折斷裝置之一對之支撐構件15、16之上表面配置膠帶17，並以於支撐構件15、16之中間定位有劃線之方式配置積層基板10。然後，自其上部沿著劃線S1按下折斷棒18而進行折斷。若如此，則如圖6(f)所示，可將積層基板沿著劃線完全分斷，可使端面精度提高。藉由格子狀地進行該積層陶瓷基板之分斷而可形成個別之積層基板晶片。藉由格子狀地進行該積層陶瓷基板之分斷而可形成個別之積層基板晶片。 Then, as shown in FIG. 6(e), the laminated substrate 10 is reversed, and the tape 17 is disposed on the upper surface of the supporting members 15 and 16 on one of the breaking devices, and is positioned in the middle of the supporting members 15 and 16. The laminated substrate 10 is disposed in a line manner. Then, the breaking bar 18 is pressed from the upper portion along the scribe line S1 to be broken. In this manner, as shown in FIG. 6(f), the laminated substrate can be completely separated along the scribe line, and the end surface accuracy can be improved. An individual laminated substrate wafer can be formed by dividing the laminated ceramic substrate in a lattice shape. An individual laminated substrate wafer can be formed by dividing the laminated ceramic substrate in a lattice shape.
該實施形態中，如圖5(b)、(c)所示對金屬膜進行溝槽加工，繼而自金屬之溝槽對陶瓷面進行刻劃，因此該期間無需使積層基板反轉，可提高作業效率。 In this embodiment, as shown in FIGS. 5(b) and 5(c), the metal film is grooved, and then the ceramic surface is scribed from the metal groove. Therefore, it is not necessary to reverse the laminated substrate during this period, thereby improving Work efficiency.
再者，該實施形態中，圖5(d)之步驟中使用刻劃裝置轉動刻劃輪而執行刻劃，但亦可藉由雷射刻劃裝置而進行刻劃。又，圖6(e)之步驟中使用折斷裝置進行折斷，但代替此於分斷之小片之形狀比較大之情形時，作業者亦可直接用手進行分斷。於該情形時不需要膠帶17。 Further, in this embodiment, in the step of (d) of FIG. 5, the scoring device is used to rotate the scoring wheel to perform scribing, but the scoring device may perform scribing. Further, in the step of Fig. 6(e), the breaking device is used for breaking, but instead of the case where the shape of the small piece is relatively large, the operator can directly break the hand by hand. In this case, the tape 17 is not required.
本發明可使用圖案化工具與刻劃裝置將於陶瓷基板積層有金屬膜之積層基板容易地分斷，對微小積層基板之製造有效。 According to the present invention, it is possible to easily separate a laminated substrate in which a metal film is laminated on a ceramic substrate by using a patterning tool and a scribing device, and it is effective for the production of a micro buildup substrate.
10‧‧‧積層陶瓷基板 10‧‧‧Multilayer ceramic substrate
11‧‧‧陶瓷基板 11‧‧‧Ceramic substrate
12‧‧‧金屬膜 12‧‧‧Metal film
12a‧‧‧溝槽 12a‧‧‧ trench
13、14‧‧‧刻劃輪 13, 14‧‧‧ marking wheel
S1‧‧‧劃線 S1‧‧‧
Claims (5)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012212191A JP6191108B2 (en) | 2012-09-26 | 2012-09-26 | Method for dividing laminated ceramic substrate |
| JP2012212193A JP6191109B2 (en) | 2012-09-26 | 2012-09-26 | Method for dividing laminated ceramic substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201412483A TW201412483A (en) | 2014-04-01 |
| TWI589420B true TWI589420B (en) | 2017-07-01 |
Family
ID=50318494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102114555A TWI589420B (en) | 2012-09-26 | 2013-04-24 | Metal multilayer ceramic substrate breaking method and trench processing tools |
Country Status (3)
| Country | Link |
|---|---|
| KR (2) | KR20140040613A (en) |
| CN (2) | CN111916356A (en) |
| TW (1) | TWI589420B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016113309A (en) * | 2014-12-11 | 2016-06-23 | 三星ダイヤモンド工業株式会社 | Scribe method and scribe device for composite substrate |
| JP6561566B2 (en) * | 2015-04-30 | 2019-08-21 | 三星ダイヤモンド工業株式会社 | Method and apparatus for dividing bonded substrate |
| JP6589358B2 (en) * | 2015-04-30 | 2019-10-16 | 三星ダイヤモンド工業株式会社 | Method for dividing brittle material substrate |
| JP6561565B2 (en) * | 2015-04-30 | 2019-08-21 | 三星ダイヤモンド工業株式会社 | Method and apparatus for dividing bonded substrate |
| JP6589380B2 (en) * | 2015-05-29 | 2019-10-16 | 三星ダイヤモンド工業株式会社 | Method for forming vertical crack in brittle material substrate and method for dividing brittle material substrate |
| JP6589381B2 (en) * | 2015-05-29 | 2019-10-16 | 三星ダイヤモンド工業株式会社 | Method for forming vertical crack in brittle material substrate and method for dividing brittle material substrate |
| JP6648448B2 (en) * | 2015-08-17 | 2020-02-14 | 三星ダイヤモンド工業株式会社 | Method for forming vertical crack in brittle material substrate and method for cutting brittle material substrate |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6418605A (en) * | 1987-07-15 | 1989-01-23 | Matsushita Electric Works Ltd | Dividing method for ceramic wiring base |
| JP2696964B2 (en) * | 1988-07-21 | 1998-01-14 | 松下電器産業株式会社 | Method of dividing ceramic substrate |
| JPH11179694A (en) * | 1997-12-17 | 1999-07-06 | Sharp Corp | Cutting method and cutting device of substrate |
| JPH11233459A (en) * | 1998-02-17 | 1999-08-27 | Sanyo Electric Co Ltd | Manufacture of semiconductor device |
| DE10006447A1 (en) * | 2000-02-14 | 2001-08-16 | Epcos Ag | Miniaturized component has system bearer and crystalline substrate surfaces at defined angle, adhesive fully or partly filling space between distance structures, substrate and system bearer |
| JP4885111B2 (en) * | 2001-11-08 | 2012-02-29 | シャープ株式会社 | Liquid crystal panel and liquid crystal panel manufacturing apparatus |
| CN101042487A (en) * | 2001-11-08 | 2007-09-26 | 夏普株式会社 | Liquid crystal panel |
| JP4032857B2 (en) * | 2002-07-24 | 2008-01-16 | ソニー株式会社 | Glass substrate for touch panel, touch panel and portable terminal |
| TW554815U (en) * | 2002-08-28 | 2003-09-21 | Usun Technology Co Ltd | Laminated plastic film punching and cutting machine |
| JP3867230B2 (en) * | 2002-09-26 | 2007-01-10 | 本田技研工業株式会社 | Mechanical scribing device |
| US20060261117A1 (en) * | 2003-03-17 | 2006-11-23 | Josef Konrad | Breaking device for separating ceramic printed circuit boards |
| US6949449B2 (en) * | 2003-07-11 | 2005-09-27 | Electro Scientific Industries, Inc. | Method of forming a scribe line on a ceramic substrate |
| TWI300960B (en) * | 2006-06-13 | 2008-09-11 | Univ Nat Cheng Kung | Method of cutting and machining a silicon wafer |
| US8188404B2 (en) * | 2006-09-19 | 2012-05-29 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
| JP5037521B2 (en) * | 2006-11-30 | 2012-09-26 | 株式会社トクヤマ | Method for manufacturing metallized ceramic substrate chip |
| JP2009244598A (en) * | 2008-03-31 | 2009-10-22 | Sharp Corp | Method of dividing base substrate, method of manufacturing liquid crystal display device, and liquid crystal display device |
| JP2009252971A (en) * | 2008-04-04 | 2009-10-29 | Dowa Metaltech Kk | Metal-ceramics bonding substrate, manufacturing method therefor, and metal-ceramics bonding body |
| TWI424580B (en) * | 2009-02-24 | 2014-01-21 | Mitsuboshi Diamond Ind Co Ltd | A trench processing tool, a trench processing method and a cutting device using a thin film solar cell |
| JP2009272647A (en) * | 2009-08-12 | 2009-11-19 | Dowa Holdings Co Ltd | Method for manufacturing of circuit board |
| JP2011147054A (en) * | 2010-01-18 | 2011-07-28 | Seiko Epson Corp | Electronic apparatus, and method of manufacturing the same |
| JP2011218607A (en) * | 2010-04-06 | 2011-11-04 | Sharp Corp | Substrate dividing apparatus and substrate dividing method |
| JP5981094B2 (en) * | 2010-06-24 | 2016-08-31 | 東芝機械株式会社 | Dicing method |
| TWI469842B (en) * | 2010-09-30 | 2015-01-21 | Mitsuboshi Diamond Ind Co Ltd | Laser processing apparatus, processing method of processed products and dividing method of processed products |
| CN102097546B (en) * | 2010-11-25 | 2013-03-06 | 山东华光光电子有限公司 | Method for cutting LED chip |
| JP2016043505A (en) * | 2014-08-20 | 2016-04-04 | 三星ダイヤモンド工業株式会社 | Dividing method and dividing device of brittle material substrate |
| JP2016112714A (en) * | 2014-12-11 | 2016-06-23 | 三星ダイヤモンド工業株式会社 | Dividing method and dividing device of substrate |
| JP6576735B2 (en) * | 2015-08-19 | 2019-09-18 | 株式会社ディスコ | Wafer division method |
-
2013
- 2013-04-24 TW TW102114555A patent/TWI589420B/en active
- 2013-05-06 KR KR1020130050368A patent/KR20140040613A/en active Application Filing
- 2013-08-26 CN CN202010581467.5A patent/CN111916356A/en active Pending
- 2013-08-26 CN CN201310381702.4A patent/CN103681295A/en active Pending
-
2018
- 2018-05-02 KR KR1020180050610A patent/KR101998653B1/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| TW201412483A (en) | 2014-04-01 |
| KR20180050626A (en) | 2018-05-15 |
| KR101998653B1 (en) | 2019-07-10 |
| CN111916356A (en) | 2020-11-10 |
| KR20140040613A (en) | 2014-04-03 |
| CN103681295A (en) | 2014-03-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI589420B (en) | Metal multilayer ceramic substrate breaking method and trench processing tools | |
| KR101779053B1 (en) | Method for dividing multi-layered ceramic substrate | |
| TW201316392A (en) | Method of splitting semiconductor substrate | |
| TW201515799A (en) | Splitting method and splitting device for brittle material substrate | |
| TWI586234B (en) | Disassembly Method and Scribing Device of Laminated Ceramic Substrate | |
| JP6332618B2 (en) | Scribing cutter wheel and scribing device | |
| TW201515802A (en) | Breaking device and splitting method | |
| TWI545636B (en) | Fracture with a brittle material substrate and its cutting method | |
| TW201622041A (en) | Substrate parting method and parting apparatus | |
| JP6191109B2 (en) | Method for dividing laminated ceramic substrate | |
| JP6191108B2 (en) | Method for dividing laminated ceramic substrate | |
| JP7418013B2 (en) | How to divide a substrate with metal film | |
| JP6315882B2 (en) | Method for dividing laminated ceramic substrate | |
| JP2013161944A (en) | Dicing method | |
| JP6005571B2 (en) | Metal film laminated ceramic substrate groove processing tool | |
| JP6040705B2 (en) | Method for dividing laminated ceramic substrate | |
| TWI583522B (en) | Disassembly method of laminated ceramic substrate | |
| JP6316395B2 (en) | Multi-layer ceramic substrate scribing equipment | |
| JP2015034111A (en) | Segmentation method of laminated ceramic substrate | |
| TW201536504A (en) | Breaking method for silicon substrate | |
| TWI684505B (en) | Composite substrate scribing method and scribing device | |
| TW201505806A (en) | Cutting method of laminated ceramic substrate |