TW201536504A - Breaking method for silicon substrate - Google Patents
Breaking method for silicon substrate Download PDFInfo
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- TW201536504A TW201536504A TW103140868A TW103140868A TW201536504A TW 201536504 A TW201536504 A TW 201536504A TW 103140868 A TW103140868 A TW 103140868A TW 103140868 A TW103140868 A TW 103140868A TW 201536504 A TW201536504 A TW 201536504A
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- substrate
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- silicon substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Abstract
Description
本發明係關於一種於矽基板上形成槽而進行分斷之矽基板之分斷方法。 The present invention relates to a method for separating a substrate which is formed by forming a groove on a substrate.
先前，於分斷矽基板時，大多係使用切割鋸等進行分斷。又，於專利文獻1中提出一種玻璃陶瓷基板之分斷方法，其係以輕荷重對玻璃陶瓷基板進行多次劃線後使其斷裂。 In the past, when the substrate was divided, most of them were cut using a dicing saw or the like. Further, Patent Document 1 proposes a method for separating a glass ceramic substrate by performing scribe line dicing on a glass ceramic substrate with a light load and then breaking it.
[專利文獻1]日本專利特開2001-113521號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2001-113521
專利文獻1中係對玻璃陶瓷基板進行多次劃線，但並非分斷矽基板之方法。又，於分斷玻璃板時，廣泛使用之方法係利用劃線裝置於玻璃板上形成刻劃線，沿著刻劃線使玻璃板斷裂，藉此進行分斷，從而考慮將該分斷方法應用於矽基板。 In Patent Document 1, a glass ceramic substrate is scribed a plurality of times, but it is not a method of dividing the crucible substrate. Moreover, in the case of dividing the glass sheet, a widely used method is to form a scribe line on the glass plate by using a scribing device, and to break the glass plate along the scribe line, thereby performing the breaking, thereby considering the breaking method. Applied to the germanium substrate.
例如，如圖1(a)所示，於矽基板10上利用劃線輪11進行劃線。然後，翻轉矽基板10，以刻劃線S位於一對支持構件12a、12b中間之方式配置矽基板10。繼而，若使斷裂棒13自上部垂直地下降，沿著下方刻劃線S之龜裂便會向上方進展，如圖1(c)所示，可與玻璃板同樣地進行分斷。 For example, as shown in FIG. 1(a), the scribing wheel 11 is used for scribing on the crucible substrate 10. Then, the ruthenium substrate 10 is turned over, and the ruthenium substrate 10 is disposed such that the scribe line S is positioned between the pair of support members 12a and 12b. Then, when the fracture bar 13 is vertically lowered from the upper portion, the crack along the lower score line S progresses upward, and as shown in Fig. 1(c), the fracture can be performed in the same manner as the glass plate.
然而，將該分斷方法應用於分斷矽基板時，如圖1(d)所示，有如分斷端面容易產生毛邊等而端面之垂直性下降之問題。 However, when the breaking method is applied to the division of the ruthenium substrate, as shown in Fig. 1(d), there is a problem that the fracture surface is likely to be burred or the like, and the perpendicularity of the end face is lowered.
本發明之目的在於，藉由劃線及斷裂來分斷矽基板時，能夠提昇端面精度地進行分斷。 An object of the present invention is to improve the accuracy of the end face when the ruthenium substrate is divided by scribing and breaking.
為了解決上述問題，本發明之矽基板之分斷方法為，於上述矽基板之一面沿著分斷預定線形成槽，自上述矽基板之未形成上述槽之面，沿著與上述槽對應之線形成刻劃線，將斷裂棒沿著上述刻劃線抵壓於上述矽基板之形成有槽之面並使其斷裂，藉此沿著刻劃線進行分斷。 In order to solve the above problem, the method for dividing a substrate of the present invention is to form a groove along a predetermined line of the tantalum substrate, and a surface from which the groove is not formed, and a groove corresponding to the groove The line is formed with a scribe line, and the rupture rod is pressed against the grooved surface of the ruthenium substrate along the scribe line and is broken, thereby breaking along the scribe line.
此處，上述矽基板之槽亦可藉由照射雷射光而形成。 Here, the groove of the ruthenium substrate may be formed by irradiating laser light.
上述矽基板之槽可具有至少10μm之深度。 The groove of the above-mentioned tantalum substrate may have a depth of at least 10 μm.
根據具有此種特徵之本發明，預先沿著矽基板之分斷預定線形成槽，沿著此槽而於相反面形成刻劃線，自槽部分按下斷裂棒進行斷裂，藉此使矽基板斷裂。如此，沿著刻劃線之龜裂會朝向槽深入，因此獲得能提昇端面精度之效果。 According to the invention having such a feature, a groove is formed in advance along a predetermined line of the ruthenium substrate, and a scribe line is formed on the opposite surface along the groove, and the rupture rod is pressed from the groove portion to be broken, thereby causing the ruthenium substrate fracture. In this way, the crack along the score line is deep toward the groove, so that the effect of improving the end face precision is obtained.
10、20‧‧‧矽基板 10, 20‧‧‧矽 substrate
11‧‧‧劃線輪 11‧‧‧marking wheel
12a、12b‧‧‧支持構件 12a, 12b‧‧‧ Supporting components
13‧‧‧斷裂棒 13‧‧‧Fracture rod
21‧‧‧槽 21‧‧‧ slots
d‧‧‧深度 D‧‧‧depth
S‧‧‧刻劃線 S‧‧ scribe
w‧‧‧寬度 w‧‧‧Width
圖1(a)-(d)係表示先前分斷矽基板之一例之圖。 1(a)-(d) are views showing an example of a previously divided ruthenium substrate.
圖2(a)-(e)係表示本發明之實施形態之矽基板之分斷處理之圖。 2(a) to 2(e) are diagrams showing the breaking process of the ruthenium substrate according to the embodiment of the present invention.
圖3(a)-(c)係表示本發明之實施形態之矽基板上形成之槽之不同例之放大剖面圖。 3(a) to 3(c) are enlarged cross-sectional views showing different examples of grooves formed on the substrate of the embodiment of the present invention.
其次，說明本發明之實施形態。圖2(a)係表示本發明之實施形態之成為分斷對象之矽基板20之圖。該基板為具有例如0.4mm厚度之矽基板。 Next, an embodiment of the present invention will be described. Fig. 2 (a) is a view showing a ruthenium substrate 20 to be a separation target according to an embodiment of the present invention. The substrate is a tantalum substrate having a thickness of, for example, 0.4 mm.
而且，以特定圖案分斷該矽基板20時，首先，如圖2(b)所示，沿著分斷預定線形成槽21。形成該槽21時利用雷射或蝕刻而形成。本實施形態中係使用YAG雷射作為雷射，使例如3倍波(355nm)波長之YAG雷射脈衝振盪後照射至成為槽之部分，藉此沿著分斷預定線形成槽21。如圖3(a)所示，例如槽21之寬度w為10~15μm、深度d為30μm。 Further, when the ruthenium substrate 20 is divided by a specific pattern, first, as shown in FIG. 2(b), the groove 21 is formed along the line to be cut. When the groove 21 is formed, it is formed by laser or etching. In the present embodiment, a YAG laser is used as a laser, and a YAG laser pulse having a wavelength of 3 times (355 nm) is oscillated and irradiated to a portion which becomes a groove, whereby the groove 21 is formed along a line to be divided. As shown in FIG. 3(a), for example, the groove 21 has a width w of 10 to 15 μm and a depth d of 30 μm.
繼而，如圖2(c)所示，翻轉矽基板20，自槽21之相反面利用未圖示之劃線裝置按壓並轉動劃線輪11，而沿著槽21進行劃線。如此形成之刻劃線為刻劃線S。此時使用之劃線輪11可為最外周邊部之棱線處未形成切口或槽之通常之劃線輪(普通劃線輪)，亦可為刀尖形成有切口或槽之高滲透型或非高滲透型之劃線輪(日本專利文獻3074143號、日本專利文獻5022602號、日本專利文獻5078354號、日本專利文獻5055119號等)。 Then, as shown in FIG. 2(c), the crucible substrate 20 is turned over, and the scribing wheel 11 is pressed and rotated from the opposite surface of the groove 21 by a scribing device (not shown), and the scribing wheel 11 is scribed along the groove 21. The scribe line thus formed is a scribe line S. The scribing wheel 11 used at this time may be a normal scribing wheel (ordinary scribing wheel) in which no slit or groove is formed at the ridge line of the outermost peripheral portion, or a high-permeability type in which the cutting edge is formed with a slit or a groove. Or a non-high-permeability type scribing wheel (Japanese Patent No. 3074143, Japanese Patent No. 5022602, Japanese Patent No. 5078354, Japanese Patent No. 5055119, etc.).
其次，如圖2(d)所示，翻轉矽基板20，以刻劃線S位於未圖示之斷裂裝置之一對支持構件12a、12b中間之方式配置矽基板20。然後，自刻劃線S之正上方下壓斷裂棒13，進行斷裂。 Next, as shown in FIG. 2(d), the ruthenium substrate 20 is turned over, and the ruthenium substrate 20 is disposed such that one of the dicing means S is located between the support members 12a and 12b. Then, the fracture bar 13 is pressed down from directly above the score line S to perform fracture.
如此，如圖2(e)所示，可沿著刻劃線S將矽基板20完全地分斷而單片化，從而可提昇端面精度。且若呈格子狀分斷矽基板，便能形成大致正方形之個別晶片。 Thus, as shown in FIG. 2(e), the ruthenium substrate 20 can be completely separated and singulated along the scribe line S, so that the end face precision can be improved. Further, if the substrate is divided in a lattice shape, individual wafers of a substantially square shape can be formed.
上述實施形態中，係照射3倍波之YAG雷射而於矽基板形成槽，但並不限定於此，亦可以利用其他形式之雷射來形成槽。又，亦可使用電漿蝕刻等乾式蝕刻、或濕式蝕刻來形成槽。 In the above embodiment, the YAG laser is irradiated with a triple beam and the groove is formed on the ruthenium substrate. However, the present invention is not limited thereto, and a groove may be formed by using another type of laser. Further, the grooves may be formed by dry etching such as plasma etching or wet etching.
又，上述實施形態中，係將槽21之形狀形成為例如剖面大致正方形狀，但如圖3(b)所示，亦可為底面彎曲之形狀之槽。又，如圖3(c)所示，亦可為剖面為V字狀之槽。 Further, in the above-described embodiment, the shape of the groove 21 is, for example, a substantially square cross section. However, as shown in Fig. 3(b), the groove may be a groove having a curved bottom surface. Further, as shown in FIG. 3(c), a groove having a V-shaped cross section may be used.
又，上述實施形態中，對於0.4mm厚度之矽基板，槽21之深度d設為30μm，藉由將深度設為至少10μm以上，分斷時可提昇端面之直 線性。若矽基板之厚度變大，必須使槽之深度d更深。 Further, in the above embodiment, the depth d of the groove 21 is set to 30 μm for a substrate having a thickness of 0.4 mm, and the depth can be increased by at least 10 μm or more. Linear. If the thickness of the substrate becomes large, the depth d of the groove must be made deeper.
本發明可使用劃線裝置及斷裂裝置容易地分斷矽基板，對於微小矽基板之製造有效。 The present invention can easily separate the ruthenium substrate using the scribing device and the rupturing device, and is effective for the manufacture of the micro ruthenium substrate.
11‧‧‧劃線輪 11‧‧‧marking wheel
12a、12b‧‧‧支持構件 12a, 12b‧‧‧ Supporting components
13‧‧‧斷裂棒 13‧‧‧Fracture rod
20‧‧‧矽基板 20‧‧‧矽 substrate
21‧‧‧槽 21‧‧‧ slots
d‧‧‧深度 D‧‧‧depth
S‧‧‧刻劃線 S‧‧ scribe
w‧‧‧寬度 w‧‧‧Width
Claims (3)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014067660A JP2015191999A (en) | 2014-03-28 | 2014-03-28 | Cutting method of silicon substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201536504A true TW201536504A (en) | 2015-10-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103140868A TW201536504A (en) | 2014-03-28 | 2014-11-25 | Breaking method for silicon substrate |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2015191999A (en) |
| KR (1) | KR20150112736A (en) |
| CN (1) | CN104952793A (en) |
| TW (1) | TW201536504A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017204055A1 (en) * | 2016-05-25 | 2017-11-30 | 三星ダイヤモンド工業株式会社 | Brittle substrate cutting method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2696964B2 (en) * | 1988-07-21 | 1998-01-14 | 松下電器産業株式会社 | Method of dividing ceramic substrate |
| JP2007165835A (en) * | 2005-11-16 | 2007-06-28 | Denso Corp | Laser dicing method and semiconductor wafer |
| JP5667942B2 (en) * | 2011-01-21 | 2015-02-12 | 株式会社東芝 | Manufacturing method of semiconductor device |
| JP2013089622A (en) * | 2011-10-13 | 2013-05-13 | Mitsuboshi Diamond Industrial Co Ltd | Breaking method of semiconductor substrate |
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2014
- 2014-03-28 JP JP2014067660A patent/JP2015191999A/en active Pending
- 2014-11-25 TW TW103140868A patent/TW201536504A/en unknown
- 2014-12-12 KR KR1020140179194A patent/KR20150112736A/en not_active Application Discontinuation
- 2014-12-19 CN CN201410803206.8A patent/CN104952793A/en active Pending
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| Publication number | Publication date |
|---|---|
| KR20150112736A (en) | 2015-10-07 |
| CN104952793A (en) | 2015-09-30 |
| JP2015191999A (en) | 2015-11-02 |
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