TWI588593B - Phase shift mask substrate and method of making same, and phase shift mask - Google Patents

Phase shift mask substrate and method of making same, and phase shift mask Download PDF

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Publication number
TWI588593B
TWI588593B TW104141184A TW104141184A TWI588593B TW I588593 B TWI588593 B TW I588593B TW 104141184 A TW104141184 A TW 104141184A TW 104141184 A TW104141184 A TW 104141184A TW I588593 B TWI588593 B TW I588593B
Authority
TW
Taiwan
Prior art keywords
phase shift
shift mask
film
light
transition metal
Prior art date
Application number
TW104141184A
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English (en)
Chinese (zh)
Other versions
TW201610559A (zh
Inventor
野澤順
宍戶博明
酒井和也
Original Assignee
Ｈｏｙａ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by Ｈｏｙａ股份有限公司 filed Critical Ｈｏｙａ股份有限公司
Publication of TW201610559A publication Critical patent/TW201610559A/zh
Application granted granted Critical
Publication of TWI588593B publication Critical patent/TWI588593B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • H10P76/00—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/755—Nanosheet or quantum barrier/well, i.e. layer structure having one dimension or thickness of 100 nm or less

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
TW104141184A 2010-04-09 2011-04-08 Phase shift mask substrate and method of making same, and phase shift mask TWI588593B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010090435 2010-04-09

Publications (2)

Publication Number Publication Date
TW201610559A TW201610559A (zh) 2016-03-16
TWI588593B true TWI588593B (zh) 2017-06-21

Family

ID=44762306

Family Applications (2)

Application Number Title Priority Date Filing Date
TW104141184A TWI588593B (zh) 2010-04-09 2011-04-08 Phase shift mask substrate and method of making same, and phase shift mask
TW100112282A TWI519888B (zh) 2010-04-09 2011-04-08 Phase shift mask substrate and its manufacturing method, with phase shift mask

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW100112282A TWI519888B (zh) 2010-04-09 2011-04-08 Phase shift mask substrate and its manufacturing method, with phase shift mask

Country Status (6)

Country Link
US (2) US8999609B2 (enExample)
JP (2) JP5313401B2 (enExample)
KR (2) KR102071721B1 (enExample)
CN (2) CN102834773B (enExample)
TW (2) TWI588593B (enExample)
WO (1) WO2011125337A1 (enExample)

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PL2317511T3 (pl) * 2009-11-03 2012-08-31 Bayer Materialscience Ag Formulacje fotopolimerowe z nastawialnym mechanicznym modułem Guv
KR101300791B1 (ko) * 2011-12-15 2013-08-29 한국생산기술연구원 전자빔 조사를 이용한 몰리브덴 박막의 전도도 향상 방법
JP5286455B1 (ja) * 2012-03-23 2013-09-11 Ｈｏｙａ株式会社 マスクブランク、転写用マスクおよびこれらの製造方法
KR102190850B1 (ko) 2012-11-08 2020-12-14 호야 가부시키가이샤 마스크 블랭크의 제조 방법 및 전사용 마스크의 제조 방법
US9625806B2 (en) * 2013-01-15 2017-04-18 Hoya Corporation Mask blank, phase-shift mask, and method for manufacturing the same
JP6324756B2 (ja) * 2013-03-19 2018-05-16 Hoya株式会社 位相シフトマスクブランク及びその製造方法、位相シフトマスクの製造方法、並びに表示装置の製造方法
JP5630592B1 (ja) * 2013-06-17 2014-11-26 大日本印刷株式会社 フォトマスクの製造方法
JP6364813B2 (ja) * 2014-02-27 2018-08-01 大日本印刷株式会社 フォトマスクの製造方法
US9933698B2 (en) 2014-03-18 2018-04-03 Hoya Corporation Mask blank, phase-shift mask and method for manufacturing semiconductor device
WO2016158649A1 (ja) 2015-03-27 2016-10-06 Hoya株式会社 マスクブランク、位相シフトマスク及び位相シフトマスクの製造方法、並びに半導体装置の製造方法
US9897911B2 (en) * 2015-08-31 2018-02-20 Shin-Etsu Chemical Co., Ltd. Halftone phase shift photomask blank, making method, and halftone phase shift photomask
JP6500791B2 (ja) * 2016-01-22 2019-04-17 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク及びその製造方法
KR101801101B1 (ko) * 2016-03-16 2017-11-27 주식회사 에스앤에스텍 위상반전 블랭크 마스크 및 포토 마스크
US11054735B2 (en) 2016-07-19 2021-07-06 Hoya Corporation Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device
JP6742184B2 (ja) * 2016-07-26 2020-08-19 アルバック成膜株式会社 位相シフタ膜の製造方法、位相シフトマスクブランクの製造方法、及び、位相シフトマスクの製造方法
US11112690B2 (en) * 2016-08-26 2021-09-07 Hoya Corporation Mask blank, transfer mask, and method for manufacturing semiconductor device
JP6677139B2 (ja) * 2016-09-28 2020-04-08 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランクの製造方法
JP6733464B2 (ja) * 2016-09-28 2020-07-29 信越化学工業株式会社 ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスク
JP6947207B2 (ja) * 2016-09-28 2021-10-13 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク及びハーフトーン位相シフト型フォトマスク
JP6740107B2 (ja) * 2016-11-30 2020-08-12 Hoya株式会社 マスクブランク、転写用マスク及び半導体デバイスの製造方法
CN111133379B (zh) * 2017-09-21 2024-03-22 Hoya株式会社 掩模坯料、转印用掩模以及半导体器件的制造方法
US20200379338A1 (en) * 2017-12-26 2020-12-03 Hoya Corporation Mask blank, phase shift mask, and method of manufacturing semiconductor device
JP7297692B2 (ja) * 2019-02-28 2023-06-26 Hoya株式会社 フォトマスクブランク、フォトマスクの製造方法、および表示装置の製造方法
JP2021170128A (ja) * 2019-10-01 2021-10-28 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク及びハーフトーン位相シフト型フォトマスク
JP7280296B2 (ja) * 2021-02-03 2023-05-23 アルバック成膜株式会社 マスクブランクス及びフォトマスク
JP2022118976A (ja) 2021-02-03 2022-08-16 アルバック成膜株式会社 マスクブランクス及びフォトマスク
JP7280297B2 (ja) * 2021-02-03 2023-05-23 アルバック成膜株式会社 マスクブランクス及びフォトマスク

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US20020058186A1 (en) * 2000-09-12 2002-05-16 Hoya Corporation Method for manufacturing phase shift mask blank and method for manufacturing phase shift mask
US20020122991A1 (en) * 2000-12-26 2002-09-05 Hoya Corporation Halftone phase shift mask and mask blank
TW201007347A (en) * 2008-06-25 2010-02-16 Hoya Corp Phase shift mask blank and phase shift mask
TW201030455A (en) * 2008-12-29 2010-08-16 Hoya Corp Photomask blank manufacturing method and photomask manufacturing method
TW201040660A (en) * 2009-02-13 2010-11-16 Hoya Corp Photomask blank and method of manufacturing the same, photomask and method of manufacturing the same

Also Published As

Publication number Publication date
CN105739233A (zh) 2016-07-06
TWI519888B (zh) 2016-02-01
CN105739233B (zh) 2019-11-05
US8999609B2 (en) 2015-04-07
JP5313401B2 (ja) 2013-10-09
US20130071777A1 (en) 2013-03-21
KR20180041266A (ko) 2018-04-23
TW201142486A (en) 2011-12-01
JP2013254206A (ja) 2013-12-19
WO2011125337A1 (ja) 2011-10-13
TW201610559A (zh) 2016-03-16
KR20130103314A (ko) 2013-09-23
CN102834773A (zh) 2012-12-19
JP5758448B2 (ja) 2015-08-05
CN102834773B (zh) 2016-04-06
KR102008857B1 (ko) 2019-08-09
US9436079B2 (en) 2016-09-06
KR102071721B1 (ko) 2020-01-30
US20150168823A1 (en) 2015-06-18
JPWO2011125337A1 (ja) 2013-07-08

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