TWI587381B - 基板處理裝置及基板處理方法 - Google Patents

基板處理裝置及基板處理方法 Download PDF

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Publication number
TWI587381B
TWI587381B TW103109916A TW103109916A TWI587381B TW I587381 B TWI587381 B TW I587381B TW 103109916 A TW103109916 A TW 103109916A TW 103109916 A TW103109916 A TW 103109916A TW I587381 B TWI587381 B TW I587381B
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TW
Taiwan
Prior art keywords
substrate
heating
drying
volatile solvent
chamber
Prior art date
Application number
TW103109916A
Other languages
English (en)
Chinese (zh)
Other versions
TW201447998A (zh
Inventor
林航之介
古矢正明
大田垣崇
長嶋裕次
木名瀬淳
安部正泰
Original Assignee
芝浦機械電子裝置股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 芝浦機械電子裝置股份有限公司 filed Critical 芝浦機械電子裝置股份有限公司
Publication of TW201447998A publication Critical patent/TW201447998A/zh
Application granted granted Critical
Publication of TWI587381B publication Critical patent/TWI587381B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW103109916A 2013-03-18 2014-03-17 基板處理裝置及基板處理方法 TWI587381B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013054574 2013-03-18
JP2013205080 2013-09-30
JP2014031405A JP6455962B2 (ja) 2013-03-18 2014-02-21 基板処理装置及び基板処理方法

Publications (2)

Publication Number Publication Date
TW201447998A TW201447998A (zh) 2014-12-16
TWI587381B true TWI587381B (zh) 2017-06-11

Family

ID=50732755

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103109916A TWI587381B (zh) 2013-03-18 2014-03-17 基板處理裝置及基板處理方法

Country Status (6)

Country Link
US (1) US9553003B2 (enExample)
EP (2) EP2782129B1 (enExample)
JP (1) JP6455962B2 (enExample)
KR (1) KR101688689B1 (enExample)
CN (1) CN104064445B (enExample)
TW (1) TWI587381B (enExample)

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CN106546067B (zh) * 2015-09-18 2022-08-19 海南椰国食品有限公司 细菌纤维素凝胶膜置换低温一体式干燥方法
JP6649146B2 (ja) * 2016-03-25 2020-02-19 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、基板処理システムおよび基板処理方法
JP6849368B2 (ja) * 2016-09-30 2021-03-24 芝浦メカトロニクス株式会社 基板処理装置
JP6770915B2 (ja) 2017-03-08 2020-10-21 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
JP6967922B2 (ja) * 2017-09-22 2021-11-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7013309B2 (ja) * 2018-04-10 2022-01-31 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7037459B2 (ja) 2018-09-10 2022-03-16 キオクシア株式会社 半導体製造装置および半導体装置の製造方法
KR102262113B1 (ko) * 2018-12-18 2021-06-11 세메스 주식회사 기판 처리 장치 및 방법
CN110571172A (zh) * 2019-09-06 2019-12-13 大同新成新材料股份有限公司 一种硅晶圆制造方法及制造装置
TWI756850B (zh) * 2019-09-30 2022-03-01 日商芝浦機械電子裝置股份有限公司 基板處理裝置
JP7486377B2 (ja) * 2020-08-07 2024-05-17 東京エレクトロン株式会社 基板処理装置、及び基板処理方法
CN114121715B (zh) * 2020-08-31 2025-10-24 芝浦机械电子株式会社 基板处理装置以及基板处理方法
CN112146359B (zh) * 2020-09-25 2022-03-11 长江存储科技有限责任公司 干燥装置、干燥方法、清洗干燥系统及清洗干燥方法
KR102523437B1 (ko) * 2020-12-29 2023-04-18 세메스 주식회사 기판 처리 장치 및 방법
KR20220103330A (ko) 2021-01-15 2022-07-22 삼성전자주식회사 웨이퍼 클리닝 장치 및 방법
JP7625458B2 (ja) * 2021-03-22 2025-02-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP7726653B2 (ja) * 2021-03-31 2025-08-20 芝浦メカトロニクス株式会社 基板乾燥装置及び基板処理装置
KR102892736B1 (ko) * 2024-02-29 2025-11-27 성균관대학교산학협력단 기판 처리 방법 및 장치

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Publication number Priority date Publication date Assignee Title
TW200735164A (en) * 2005-04-08 2007-09-16 Mattson Tech Inc Rapid thermal processing using energy transfer layers
TW201308499A (zh) * 2011-07-29 2013-02-16 Semes Co Ltd 用以處理基板之裝置及方法

Also Published As

Publication number Publication date
KR101688689B1 (ko) 2016-12-21
EP2782129A3 (en) 2014-10-29
EP2782129B1 (en) 2020-09-23
US20140261554A1 (en) 2014-09-18
TW201447998A (zh) 2014-12-16
CN104064445A (zh) 2014-09-24
EP2782129A2 (en) 2014-09-24
CN104064445B (zh) 2017-04-12
KR20140114302A (ko) 2014-09-26
JP6455962B2 (ja) 2019-01-23
EP3483923A1 (en) 2019-05-15
JP2015092530A (ja) 2015-05-14
US9553003B2 (en) 2017-01-24

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