TWI587366B - 支撐及控制基材的裝置及方法 - Google Patents

支撐及控制基材的裝置及方法 Download PDF

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Publication number
TWI587366B
TWI587366B TW101117615A TW101117615A TWI587366B TW I587366 B TWI587366 B TW I587366B TW 101117615 A TW101117615 A TW 101117615A TW 101117615 A TW101117615 A TW 101117615A TW I587366 B TWI587366 B TW I587366B
Authority
TW
Taiwan
Prior art keywords
substrate
fluid
substrate support
sensors
support body
Prior art date
Application number
TW101117615A
Other languages
English (en)
Chinese (zh)
Other versions
TW201250789A (en
Inventor
柯莫布萊克
拉尼許喬瑟夫Ｍ
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201250789A publication Critical patent/TW201250789A/zh
Application granted granted Critical
Publication of TWI587366B publication Critical patent/TWI587366B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW101117615A 2011-06-02 2012-05-17 支撐及控制基材的裝置及方法 TWI587366B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/152,157 US20120309115A1 (en) 2011-06-02 2011-06-02 Apparatus and methods for supporting and controlling a substrate

Publications (2)

Publication Number Publication Date
TW201250789A TW201250789A (en) 2012-12-16
TWI587366B true TWI587366B (zh) 2017-06-11

Family

ID=47259736

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101117615A TWI587366B (zh) 2011-06-02 2012-05-17 支撐及控制基材的裝置及方法

Country Status (6)

Country Link
US (1) US20120309115A1 (enExample)
JP (1) JP6091496B2 (enExample)
KR (1) KR102007994B1 (enExample)
CN (1) CN103582941B (enExample)
TW (1) TWI587366B (enExample)
WO (1) WO2012166322A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011055061A1 (de) * 2011-11-04 2013-05-08 Aixtron Se CVD-Reaktor bzw. Substrathalter für einen CVD-Reaktor
WO2013162842A1 (en) * 2012-04-25 2013-10-31 Applied Materials, Inc. Wafer edge measurement and control
KR101543690B1 (ko) * 2014-01-29 2015-08-21 세메스 주식회사 기판처리장치 및 방법
CN107667418B (zh) * 2015-06-05 2022-03-01 应用材料公司 用于降低基板温度非均匀性的改良式装置
JP2019075477A (ja) * 2017-10-17 2019-05-16 株式会社ディスコ チャックテーブル機構
JP7178177B2 (ja) * 2018-03-22 2022-11-25 東京エレクトロン株式会社 基板処理装置
WO2019231614A1 (en) * 2018-05-31 2019-12-05 Applied Materials, Inc. Extreme uniformity heated substrate support assembly
US12437979B2 (en) * 2020-03-06 2025-10-07 Applied Materials, Inc. Capacitive sensors and capacitive sensing locations for plasma chamber condition monitoring
TWI869928B (zh) * 2020-03-20 2025-01-11 荷蘭商Ａｓｍｌ荷蘭公司 用於檢查晶圓之系統及其相關非暫時性電腦可讀媒體
KR102831548B1 (ko) * 2020-07-20 2025-07-10 세메스 주식회사 지지 유닛 및 이를 이용한 기판 리프팅 방법

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5584971A (en) * 1993-07-02 1996-12-17 Tokyo Electron Limited Treatment apparatus control method
US5618354A (en) * 1995-02-02 1997-04-08 International Business Machines Corporation Apparatus and method for carrier backing film reconditioning
US6183565B1 (en) * 1997-07-08 2001-02-06 Asm International N.V Method and apparatus for supporting a semiconductor wafer during processing
US20070195653A1 (en) * 2004-04-14 2007-08-23 Yuval Yassour Non-contact support platforms for distance adjustment
US20080145190A1 (en) * 2004-03-17 2008-06-19 Yuval Yassour Non-Contact Thermal Platforms
TW200943472A (en) * 2008-01-21 2009-10-16 Applied Materials Inc Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber
TW201029070A (en) * 2008-11-06 2010-08-01 Applied Materials Inc Rapid thermal processing chamber with micro-positioning system
US20110061810A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4151749B2 (ja) * 1998-07-16 2008-09-17 東京エレクトロンＡｔ株式会社 プラズマ処理装置およびその方法
KR100412262B1 (ko) * 2001-01-31 2003-12-31 삼성전자주식회사 베이크 장치
US20020144786A1 (en) * 2001-04-05 2002-10-10 Angstron Systems, Inc. Substrate temperature control in an ALD reactor
WO2002101806A1 (de) * 2001-06-08 2002-12-19 Aixtron Ag Verfahren und vorrichtung zur kurzzeitigen thermischen behandlung von flachen g egenständen
JP4485374B2 (ja) * 2005-01-25 2010-06-23 東京エレクトロン株式会社 冷却処理装置
DE102006018514A1 (de) * 2006-04-21 2007-10-25 Aixtron Ag Vorrichtung und Verfahren zur Steuerung der Oberflächentemperatur eines Substrates in einer Prozesskammer
WO2008112673A2 (en) * 2007-03-12 2008-09-18 Tokyo Electron Limited Dynamic temperature backside gas control for improved within-substrate processing uniformity
KR100877102B1 (ko) * 2007-05-28 2009-01-09 주식회사 하이닉스반도체 열처리 장치 및 이를 이용한 열처리 방법
US8388853B2 (en) * 2009-02-11 2013-03-05 Applied Materials, Inc. Non-contact substrate processing
KR101084235B1 (ko) * 2009-12-15 2011-11-16 삼성모바일디스플레이주식회사 비정질 실리콘 결정화 장치

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5584971A (en) * 1993-07-02 1996-12-17 Tokyo Electron Limited Treatment apparatus control method
US5618354A (en) * 1995-02-02 1997-04-08 International Business Machines Corporation Apparatus and method for carrier backing film reconditioning
US6183565B1 (en) * 1997-07-08 2001-02-06 Asm International N.V Method and apparatus for supporting a semiconductor wafer during processing
US20080145190A1 (en) * 2004-03-17 2008-06-19 Yuval Yassour Non-Contact Thermal Platforms
US20070195653A1 (en) * 2004-04-14 2007-08-23 Yuval Yassour Non-contact support platforms for distance adjustment
TW200943472A (en) * 2008-01-21 2009-10-16 Applied Materials Inc Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber
TW201029070A (en) * 2008-11-06 2010-08-01 Applied Materials Inc Rapid thermal processing chamber with micro-positioning system
US20110061810A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching

Also Published As

Publication number Publication date
KR20140033420A (ko) 2014-03-18
TW201250789A (en) 2012-12-16
JP6091496B2 (ja) 2017-03-08
US20120309115A1 (en) 2012-12-06
CN103582941A (zh) 2014-02-12
CN103582941B (zh) 2016-08-17
KR102007994B1 (ko) 2019-08-06
WO2012166322A1 (en) 2012-12-06
JP2014522574A (ja) 2014-09-04

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