CN103582941B - 支撑及控制基板的装置及方法 - Google Patents

支撑及控制基板的装置及方法 Download PDF

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Publication number
CN103582941B
CN103582941B CN201280027086.6A CN201280027086A CN103582941B CN 103582941 B CN103582941 B CN 103582941B CN 201280027086 A CN201280027086 A CN 201280027086A CN 103582941 B CN103582941 B CN 103582941B
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China
Prior art keywords
fluid
substrate
ports
substrate support
thermal
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CN201280027086.6A
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English (en)
Chinese (zh)
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CN103582941A (zh
Inventor
布莱克·凯尔梅尔
约瑟夫·M·拉内什
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201280027086.6A 2011-06-02 2012-05-11 支撑及控制基板的装置及方法 Active CN103582941B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/152,157 US20120309115A1 (en) 2011-06-02 2011-06-02 Apparatus and methods for supporting and controlling a substrate
US13/152,157 2011-06-02
PCT/US2012/037473 WO2012166322A1 (en) 2011-06-02 2012-05-11 Apparatus and methods for supporting and controlling a substrate

Publications (2)

Publication Number Publication Date
CN103582941A CN103582941A (zh) 2014-02-12
CN103582941B true CN103582941B (zh) 2016-08-17

Family

ID=47259736

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280027086.6A Active CN103582941B (zh) 2011-06-02 2012-05-11 支撑及控制基板的装置及方法

Country Status (6)

Country Link
US (1) US20120309115A1 (enExample)
JP (1) JP6091496B2 (enExample)
KR (1) KR102007994B1 (enExample)
CN (1) CN103582941B (enExample)
TW (1) TWI587366B (enExample)
WO (1) WO2012166322A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011055061A1 (de) * 2011-11-04 2013-05-08 Aixtron Se CVD-Reaktor bzw. Substrathalter für einen CVD-Reaktor
WO2013162842A1 (en) * 2012-04-25 2013-10-31 Applied Materials, Inc. Wafer edge measurement and control
KR101543690B1 (ko) * 2014-01-29 2015-08-21 세메스 주식회사 기판처리장치 및 방법
WO2016195984A1 (en) * 2015-06-05 2016-12-08 Applied Materials, Inc. Improved apparatus for decreasing substrate temperature non-uniformity
JP2019075477A (ja) * 2017-10-17 2019-05-16 株式会社ディスコ チャックテーブル機構
JP7178177B2 (ja) * 2018-03-22 2022-11-25 東京エレクトロン株式会社 基板処理装置
KR20250100800A (ko) * 2018-05-31 2025-07-03 어플라이드 머티어리얼스, 인코포레이티드 극도의 균일성의 가열식 기판 지지 조립체
US12437979B2 (en) 2020-03-06 2025-10-07 Applied Materials, Inc. Capacitive sensors and capacitive sensing locations for plasma chamber condition monitoring
TWI811650B (zh) * 2020-03-20 2023-08-11 荷蘭商Ａｓｍｌ荷蘭公司 靜電吸盤控制系統及其相關非暫時性電腦可讀媒體
KR102831548B1 (ko) * 2020-07-20 2025-07-10 세메스 주식회사 지지 유닛 및 이를 이용한 기판 리프팅 방법

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW262566B (enExample) * 1993-07-02 1995-11-11 Tokyo Electron Co Ltd
US5558111A (en) * 1995-02-02 1996-09-24 International Business Machines Corporation Apparatus and method for carrier backing film reconditioning
US6183565B1 (en) * 1997-07-08 2001-02-06 Asm International N.V Method and apparatus for supporting a semiconductor wafer during processing
JP4151749B2 (ja) * 1998-07-16 2008-09-17 東京エレクトロンＡｔ株式会社 プラズマ処理装置およびその方法
KR100412262B1 (ko) * 2001-01-31 2003-12-31 삼성전자주식회사 베이크 장치
US20020144786A1 (en) * 2001-04-05 2002-10-10 Angstron Systems, Inc. Substrate temperature control in an ALD reactor
WO2002101806A1 (de) * 2001-06-08 2002-12-19 Aixtron Ag Verfahren und vorrichtung zur kurzzeitigen thermischen behandlung von flachen g egenständen
CN101421822B (zh) * 2004-03-17 2010-08-18 科福罗科学解决方案有限公司 非接触式加热平台
WO2005099350A2 (en) * 2004-04-14 2005-10-27 Coreflow Scientific Solutions Ltd. Non-contact support platforms for distance adjustment
JP4485374B2 (ja) * 2005-01-25 2010-06-23 東京エレクトロン株式会社 冷却処理装置
DE102006018514A1 (de) * 2006-04-21 2007-10-25 Aixtron Ag Vorrichtung und Verfahren zur Steuerung der Oberflächentemperatur eines Substrates in einer Prozesskammer
KR101526615B1 (ko) * 2007-03-12 2015-06-05 도쿄엘렉트론가부시키가이샤 처리 균일성 제어 방법, 플라즈마 처리 장치 및 기판 국소 변형 방법
US8057602B2 (en) * 2007-05-09 2011-11-15 Applied Materials, Inc. Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber
KR100877102B1 (ko) * 2007-05-28 2009-01-09 주식회사 하이닉스반도체 열처리 장치 및 이를 이용한 열처리 방법
TWI505370B (zh) * 2008-11-06 2015-10-21 Applied Materials Inc 含有微定位系統之快速熱處理腔室與處理基材之方法
JP5655010B2 (ja) * 2009-02-11 2015-01-14 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 非接触基板処理のための方法及び装置
US20110061810A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
KR101084235B1 (ko) * 2009-12-15 2011-11-16 삼성모바일디스플레이주식회사 비정질 실리콘 결정화 장치

Also Published As

Publication number Publication date
KR102007994B1 (ko) 2019-08-06
TW201250789A (en) 2012-12-16
WO2012166322A1 (en) 2012-12-06
JP6091496B2 (ja) 2017-03-08
KR20140033420A (ko) 2014-03-18
CN103582941A (zh) 2014-02-12
TWI587366B (zh) 2017-06-11
JP2014522574A (ja) 2014-09-04
US20120309115A1 (en) 2012-12-06

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