CN103582941B - 支撑及控制基板的装置及方法 - Google Patents

支撑及控制基板的装置及方法 Download PDF

Info

Publication number
CN103582941B
CN103582941B CN201280027086.6A CN201280027086A CN103582941B CN 103582941 B CN103582941 B CN 103582941B CN 201280027086 A CN201280027086 A CN 201280027086A CN 103582941 B CN103582941 B CN 103582941B
Authority
CN
China
Prior art keywords
fluid
substrate
ports
substrate support
thermal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201280027086.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN103582941A (zh
Inventor
布莱克·凯尔梅尔
约瑟夫·M·拉内什
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN103582941A publication Critical patent/CN103582941A/zh
Application granted granted Critical
Publication of CN103582941B publication Critical patent/CN103582941B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0434Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201280027086.6A 2011-06-02 2012-05-11 支撑及控制基板的装置及方法 Active CN103582941B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/152,157 2011-06-02
US13/152,157 US20120309115A1 (en) 2011-06-02 2011-06-02 Apparatus and methods for supporting and controlling a substrate
PCT/US2012/037473 WO2012166322A1 (en) 2011-06-02 2012-05-11 Apparatus and methods for supporting and controlling a substrate

Publications (2)

Publication Number Publication Date
CN103582941A CN103582941A (zh) 2014-02-12
CN103582941B true CN103582941B (zh) 2016-08-17

Family

ID=47259736

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280027086.6A Active CN103582941B (zh) 2011-06-02 2012-05-11 支撑及控制基板的装置及方法

Country Status (6)

Country Link
US (1) US20120309115A1 (enExample)
JP (1) JP6091496B2 (enExample)
KR (1) KR102007994B1 (enExample)
CN (1) CN103582941B (enExample)
TW (1) TWI587366B (enExample)
WO (1) WO2012166322A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011055061A1 (de) * 2011-11-04 2013-05-08 Aixtron Se CVD-Reaktor bzw. Substrathalter für einen CVD-Reaktor
WO2013162842A1 (en) * 2012-04-25 2013-10-31 Applied Materials, Inc. Wafer edge measurement and control
KR101543690B1 (ko) * 2014-01-29 2015-08-21 세메스 주식회사 기판처리장치 및 방법
CN107667418B (zh) * 2015-06-05 2022-03-01 应用材料公司 用于降低基板温度非均匀性的改良式装置
JP2019075477A (ja) * 2017-10-17 2019-05-16 株式会社ディスコ チャックテーブル機構
JP7178177B2 (ja) * 2018-03-22 2022-11-25 東京エレクトロン株式会社 基板処理装置
WO2019231614A1 (en) * 2018-05-31 2019-12-05 Applied Materials, Inc. Extreme uniformity heated substrate support assembly
US12437979B2 (en) * 2020-03-06 2025-10-07 Applied Materials, Inc. Capacitive sensors and capacitive sensing locations for plasma chamber condition monitoring
TWI869928B (zh) * 2020-03-20 2025-01-11 荷蘭商Asml荷蘭公司 用於檢查晶圓之系統及其相關非暫時性電腦可讀媒體
KR102831548B1 (ko) * 2020-07-20 2025-07-10 세메스 주식회사 지지 유닛 및 이를 이용한 기판 리프팅 방법

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW262566B (enExample) * 1993-07-02 1995-11-11 Tokyo Electron Co Ltd
US5558111A (en) * 1995-02-02 1996-09-24 International Business Machines Corporation Apparatus and method for carrier backing film reconditioning
US6183565B1 (en) * 1997-07-08 2001-02-06 Asm International N.V Method and apparatus for supporting a semiconductor wafer during processing
JP4151749B2 (ja) * 1998-07-16 2008-09-17 東京エレクトロンAt株式会社 プラズマ処理装置およびその方法
KR100412262B1 (ko) * 2001-01-31 2003-12-31 삼성전자주식회사 베이크 장치
US20020144786A1 (en) * 2001-04-05 2002-10-10 Angstron Systems, Inc. Substrate temperature control in an ALD reactor
WO2002101806A1 (de) * 2001-06-08 2002-12-19 Aixtron Ag Verfahren und vorrichtung zur kurzzeitigen thermischen behandlung von flachen g egenständen
KR20070006768A (ko) * 2004-03-17 2007-01-11 코레플로우 사이언티픽 솔루션스 리미티드 비접촉 열 플랫폼
EP1776300A4 (en) * 2004-04-14 2011-05-11 Coreflow Scient Solutions Ltd CONTACTLESS SUPPORT PLATFORMS FOR SPACING ADJUSTMENT
JP4485374B2 (ja) * 2005-01-25 2010-06-23 東京エレクトロン株式会社 冷却処理装置
DE102006018514A1 (de) * 2006-04-21 2007-10-25 Aixtron Ag Vorrichtung und Verfahren zur Steuerung der Oberflächentemperatur eines Substrates in einer Prozesskammer
WO2008112673A2 (en) * 2007-03-12 2008-09-18 Tokyo Electron Limited Dynamic temperature backside gas control for improved within-substrate processing uniformity
US8057602B2 (en) * 2007-05-09 2011-11-15 Applied Materials, Inc. Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber
KR100877102B1 (ko) * 2007-05-28 2009-01-09 주식회사 하이닉스반도체 열처리 장치 및 이를 이용한 열처리 방법
TWI505370B (zh) * 2008-11-06 2015-10-21 Applied Materials Inc 含有微定位系統之快速熱處理腔室與處理基材之方法
US8388853B2 (en) * 2009-02-11 2013-03-05 Applied Materials, Inc. Non-contact substrate processing
US20110061810A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
KR101084235B1 (ko) * 2009-12-15 2011-11-16 삼성모바일디스플레이주식회사 비정질 실리콘 결정화 장치

Also Published As

Publication number Publication date
KR20140033420A (ko) 2014-03-18
TWI587366B (zh) 2017-06-11
TW201250789A (en) 2012-12-16
JP6091496B2 (ja) 2017-03-08
US20120309115A1 (en) 2012-12-06
CN103582941A (zh) 2014-02-12
KR102007994B1 (ko) 2019-08-06
WO2012166322A1 (en) 2012-12-06
JP2014522574A (ja) 2014-09-04

Similar Documents

Publication Publication Date Title
CN103582941B (zh) 支撑及控制基板的装置及方法
US9130001B2 (en) Edge ring for a thermal processing chamber
US8057601B2 (en) Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber
JP5705133B2 (ja) 静電チャックシステムおよび基板表面に亘って温度プロファイルを半径方向に調整するための方法
TWI495752B (zh) 具有可作為溫度控制用之流體區的工作支承
CN102498558B (zh) 将基板放置在处理腔室中的设备和让处理腔室中的基板朝向中心的方法
TW201718928A (zh) 承載器及基板處理裝置
JP2009283904A (ja) 成膜装置および成膜方法
JP2011503877A (ja) 温度制御のための流体ゾーンを備えるワークピース支持体
KR101466816B1 (ko) 히터 부재 및 그것을 갖는 기판 처리 장치
KR20160048634A (ko) 기판 처리 장치
JP2010123810A (ja) 基板保持装置及び基板温度制御方法
KR101767469B1 (ko) 기판 처리 장치, 반도체 장치의 제조 방법 및 가열부
JP5141155B2 (ja) 成膜装置
WO2002017384A1 (en) Electrostatic chuck temperature control method and system
JP2015179775A (ja) 半導体製造装置
JP2007324478A (ja) 基板処理装置
KR20080090823A (ko) 듀얼 온도 제어구조를 구비하는 반도체 제조장치

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant