TWI582843B - The manufacturing method of the attached wafer - Google Patents
The manufacturing method of the attached wafer Download PDFInfo
- Publication number
- TWI582843B TWI582843B TW101137429A TW101137429A TWI582843B TW I582843 B TWI582843 B TW I582843B TW 101137429 A TW101137429 A TW 101137429A TW 101137429 A TW101137429 A TW 101137429A TW I582843 B TWI582843 B TW I582843B
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- component
- dividing
- component wafer
- cutting
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- Dicing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011247343A JP5995428B2 (ja) | 2011-11-11 | 2011-11-11 | カバー付きチップの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201322322A TW201322322A (zh) | 2013-06-01 |
TWI582843B true TWI582843B (zh) | 2017-05-11 |
Family
ID=48314889
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW101137429A TWI582843B (zh) | 2011-11-11 | 2012-10-11 | The manufacturing method of the attached wafer |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5995428B2 (ja) |
KR (1) | KR101893617B1 (ja) |
CN (1) | CN103107137B (ja) |
TW (1) | TWI582843B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6234312B2 (ja) * | 2014-04-11 | 2017-11-22 | 株式会社ディスコ | 積層基板の加工方法 |
JP6305853B2 (ja) * | 2014-07-08 | 2018-04-04 | 株式会社ディスコ | ウエーハの加工方法 |
DE102016215473B4 (de) * | 2015-09-10 | 2023-10-26 | Disco Corporation | Verfahren zum Bearbeiten eines Substrats |
JP6814646B2 (ja) * | 2017-01-23 | 2021-01-20 | 株式会社ディスコ | 光デバイスウェーハの加工方法 |
JP7292803B2 (ja) * | 2019-09-12 | 2023-06-19 | 株式会社ディスコ | ウェーハの加工方法 |
CN110842769A (zh) * | 2019-11-19 | 2020-02-28 | 长江存储科技有限责任公司 | 一种用于提高芯片摩擦去层均匀性的装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010103328A (ja) * | 2008-10-24 | 2010-05-06 | Disco Abrasive Syst Ltd | 貼り合わせウエーハの分割方法 |
JP2010141085A (ja) * | 2008-12-11 | 2010-06-24 | Disco Abrasive Syst Ltd | 積層製品の製造方法 |
JP2011066294A (ja) * | 2009-09-18 | 2011-03-31 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03270156A (ja) * | 1990-03-20 | 1991-12-02 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JP4231349B2 (ja) * | 2003-07-02 | 2009-02-25 | 株式会社ディスコ | レーザー加工方法およびレーザー加工装置 |
JP2005051144A (ja) * | 2003-07-31 | 2005-02-24 | Shinko Electric Ind Co Ltd | 半導体装置の製造方法 |
JP3842769B2 (ja) * | 2003-09-01 | 2006-11-08 | 株式会社東芝 | レーザ加工装置、レーザ加工方法、及び半導体装置の製造方法 |
JP5318634B2 (ja) * | 2009-03-30 | 2013-10-16 | ラピスセミコンダクタ株式会社 | チップサイズパッケージ状の半導体チップ及び製造方法 |
-
2011
- 2011-11-11 JP JP2011247343A patent/JP5995428B2/ja active Active
-
2012
- 2012-10-11 TW TW101137429A patent/TWI582843B/zh active
- 2012-10-31 KR KR1020120122154A patent/KR101893617B1/ko active IP Right Grant
- 2012-11-07 CN CN201210440189.7A patent/CN103107137B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010103328A (ja) * | 2008-10-24 | 2010-05-06 | Disco Abrasive Syst Ltd | 貼り合わせウエーハの分割方法 |
JP2010141085A (ja) * | 2008-12-11 | 2010-06-24 | Disco Abrasive Syst Ltd | 積層製品の製造方法 |
JP2011066294A (ja) * | 2009-09-18 | 2011-03-31 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR101893617B1 (ko) | 2018-10-04 |
CN103107137B (zh) | 2017-06-16 |
JP5995428B2 (ja) | 2016-09-21 |
CN103107137A (zh) | 2013-05-15 |
KR20130052721A (ko) | 2013-05-23 |
TW201322322A (zh) | 2013-06-01 |
JP2013105821A (ja) | 2013-05-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI582843B (zh) | The manufacturing method of the attached wafer | |
JP5608521B2 (ja) | 半導体ウエハの分割方法と半導体チップ及び半導体装置 | |
JP3825753B2 (ja) | 半導体装置の製造方法 | |
CN105047612B (zh) | 晶片的加工方法 | |
US20070155131A1 (en) | Method of singulating a microelectronic wafer | |
JP2015213135A (ja) | ウェーハの加工方法 | |
TW200807534A (en) | Back side wafer dicing | |
TWI657540B (zh) | 具有晶圓級底部塡料之晶圓的隱形切割 | |
KR20140105375A (ko) | 웨이퍼의 가공 방법 | |
JP3795040B2 (ja) | 半導体装置の製造方法 | |
JP2006190779A (ja) | ウエーハの分割方法 | |
JP2005209719A (ja) | 半導体ウエーハの加工方法 | |
JP2011187479A (ja) | ウエーハの加工方法 | |
KR102349663B1 (ko) | 웨이퍼의 가공 방법 | |
JP2005032903A (ja) | 半導体装置及びその製造方法 | |
KR20180050225A (ko) | 웨이퍼의 가공 방법 | |
KR20170053115A (ko) | 웨이퍼의 가공 방법 | |
JP6140030B2 (ja) | イメージセンサ用ウエハ積層体の分断方法 | |
JP6005708B2 (ja) | イメージセンサ用ウエハ積層体の分断方法及び分断装置 | |
US11158601B2 (en) | Laminated element manufacturing method | |
KR20150105210A (ko) | 판형물의 가공 방법 | |
JP4553878B2 (ja) | 半導体装置の製造方法 | |
JP5863264B2 (ja) | ウエーハの加工方法 | |
JP2015149445A (ja) | ウェーハの加工方法 | |
TW201921452A (zh) | 層積型元件之製造方法 |