TWI581465B - 晶片級封裝發光裝置及其製造方法 - Google Patents
晶片級封裝發光裝置及其製造方法 Download PDFInfo
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- TWI581465B TWI581465B TW104144441A TW104144441A TWI581465B TW I581465 B TWI581465 B TW I581465B TW 104144441 A TW104144441 A TW 104144441A TW 104144441 A TW104144441 A TW 104144441A TW I581465 B TWI581465 B TW I581465B
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- 238000004519 manufacturing process Methods 0.000 title claims description 40
- 238000004806 packaging method and process Methods 0.000 title 1
- 239000000463 material Substances 0.000 claims description 111
- 235000012431 wafers Nutrition 0.000 claims description 61
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 41
- 239000002861 polymer material Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 28
- 238000000149 argon plasma sintering Methods 0.000 claims description 22
- 239000010410 layer Substances 0.000 claims description 19
- 230000002093 peripheral effect Effects 0.000 claims description 18
- 238000005507 spraying Methods 0.000 claims description 13
- 238000005520 cutting process Methods 0.000 claims description 10
- 239000010419 fine particle Substances 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 10
- 238000000465 moulding Methods 0.000 claims description 6
- 229920001971 elastomer Polymers 0.000 claims description 5
- 239000005060 rubber Substances 0.000 claims description 5
- 229920001296 polysiloxane Polymers 0.000 claims description 4
- 239000004593 Epoxy Substances 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000009826 distribution Methods 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000005484 gravity Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 238000004220 aggregation Methods 0.000 description 4
- 230000002776 aggregation Effects 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 208000027418 Wounds and injury Diseases 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000000084 colloidal system Substances 0.000 description 3
- 230000032798 delamination Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 208000014674 injury Diseases 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- 239000007779 soft material Substances 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 230000008832 photodamage Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/19—Manufacturing methods of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW104144441A TWI581465B (zh) | 2015-12-30 | 2015-12-30 | 晶片級封裝發光裝置及其製造方法 |
| US15/389,417 US10693046B2 (en) | 2015-12-30 | 2016-12-22 | Chip scale packaging light emitting device and manufacturing method of the same |
| EP16206749.0A EP3188261B1 (en) | 2015-12-30 | 2016-12-23 | Chip scale packaging light emitting device and manufacturing method of the same |
| JP2016257288A JP6596410B2 (ja) | 2015-12-30 | 2016-12-29 | チップスケールパッケージ発光素子およびその製造方法 |
| KR1020160183990A KR102091534B1 (ko) | 2015-12-30 | 2016-12-30 | 칩 스케일 패키지 발광 디바이스 및 그 제조 방법 |
| KR1020190023328A KR20190031450A (ko) | 2015-12-30 | 2019-02-27 | 칩 스케일 패키지 발광 디바이스 및 그 제조 방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW104144441A TWI581465B (zh) | 2015-12-30 | 2015-12-30 | 晶片級封裝發光裝置及其製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI581465B true TWI581465B (zh) | 2017-05-01 |
| TW201724564A TW201724564A (zh) | 2017-07-01 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104144441A TWI581465B (zh) | 2015-12-30 | 2015-12-30 | 晶片級封裝發光裝置及其製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6596410B2 (ko) |
| KR (2) | KR102091534B1 (ko) |
| TW (1) | TWI581465B (ko) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109578843A (zh) * | 2018-11-21 | 2019-04-05 | 中山市木林森电子有限公司 | 一种新型led灯条制作工艺 |
| JP7484457B2 (ja) * | 2019-06-12 | 2024-05-16 | 東レ株式会社 | マイクロｌｅｄディスプレイ装置 |
| JP7450770B2 (ja) * | 2020-10-15 | 2024-03-15 | 泉州三安半導体科技有限公司 | 発光装置 |
| US20240332467A1 (en) * | 2023-03-31 | 2024-10-03 | Seoul Viosys Co., Ltd. | Light emitting apparatus and display apparatus including the same |
| CN117497667B (zh) * | 2023-12-29 | 2024-03-19 | 江西省兆驰光电有限公司 | 一种发光led封装方法及发光led封装结构 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080099771A1 (en) * | 2006-10-31 | 2008-05-01 | Charng-Shyang Jong | Light emitting diode and wafer level package method, wafer level bonding method thereof, and circuit structure for wafer level package |
| TW201119090A (en) * | 2009-11-20 | 2011-06-01 | Everlight Electronics Co Ltd | Light emitting diode package and manufacturing method thereof |
| TW201143163A (en) * | 2010-05-20 | 2011-12-01 | Advanced Optoelectronic Tech | LED package |
| TW201327940A (zh) * | 2011-12-30 | 2013-07-01 | Advanced Optoelectronic Tech | 發光二極體封裝結構 |
| TW201344979A (zh) * | 2012-04-27 | 2013-11-01 | Delta Electronics Inc | 發光裝置及其製造方法 |
| US20140361318A1 (en) * | 2005-02-18 | 2014-12-11 | Nichia Corporation | Light emitting device provided with lens for controlling light distribution characteristic |
| TW201511370A (zh) * | 2013-09-03 | 2015-03-16 | Delta Electronics Inc | 發光二極體裝置 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003031848A (ja) * | 2001-07-13 | 2003-01-31 | Seiwa Electric Mfg Co Ltd | 固体発光ランプ及び固体発光ランプの製造方法 |
| US9142740B2 (en) * | 2003-07-04 | 2015-09-22 | Epistar Corporation | Optoelectronic element and manufacturing method thereof |
| US7344902B2 (en) * | 2004-11-15 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Overmolded lens over LED die |
| JP2006140362A (ja) * | 2004-11-15 | 2006-06-01 | Nitto Denko Corp | 光半導体素子封止用シートおよび該シートを用いた光半導体装置の製造方法 |
| JP5262054B2 (ja) * | 2007-10-10 | 2013-08-14 | 日亜化学工業株式会社 | 発光装置の製造方法 |
| TWI608760B (zh) * | 2008-11-13 | 2017-12-11 | 行家光電有限公司 | 形成螢光粉轉換發光元件之方法 |
| TWI508331B (zh) * | 2008-11-13 | 2015-11-11 | Maven Optronics Corp | 用於形成螢光轉換型發光元件之薄膜螢光層的系統及方法、以及用於螢光轉換型發光元件之薄膜螢光層 |
| JP5353602B2 (ja) * | 2009-09-25 | 2013-11-27 | 凸版印刷株式会社 | 光源ユニットの製造方法 |
| JP5566785B2 (ja) * | 2010-06-22 | 2014-08-06 | 日東電工株式会社 | 複合シート |
| US20120153311A1 (en) * | 2010-12-17 | 2012-06-21 | Intematix Corporation | Low-cost solid-state based light emitting devices with photoluminescent wavelength conversion and their method of manufacture |
| JP5661657B2 (ja) * | 2012-01-16 | 2015-01-28 | 信越化学工業株式会社 | シリコーン樹脂組成物、蛍光体含有波長変換フィルム、及びそれらの硬化物 |
| JP2013161862A (ja) * | 2012-02-02 | 2013-08-19 | Konica Minolta Inc | Ｌｅｄ装置、及びその製造方法 |
| JP2013214716A (ja) * | 2012-03-06 | 2013-10-17 | Nitto Denko Corp | 蛍光封止シート、発光ダイオード装置およびその製造方法 |
| JP6155827B2 (ja) * | 2013-05-11 | 2017-07-05 | 日亜化学工業株式会社 | 発光装置の製造方法 |
| JP6237181B2 (ja) * | 2013-12-06 | 2017-11-29 | 日亜化学工業株式会社 | 発光装置の製造方法 |
-
2015
- 2015-12-30 TW TW104144441A patent/TWI581465B/zh active
-
2016
- 2016-12-29 JP JP2016257288A patent/JP6596410B2/ja active Active
- 2016-12-30 KR KR1020160183990A patent/KR102091534B1/ko active IP Right Grant
-
2019
- 2019-02-27 KR KR1020190023328A patent/KR20190031450A/ko active Application Filing
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140361318A1 (en) * | 2005-02-18 | 2014-12-11 | Nichia Corporation | Light emitting device provided with lens for controlling light distribution characteristic |
| US20080099771A1 (en) * | 2006-10-31 | 2008-05-01 | Charng-Shyang Jong | Light emitting diode and wafer level package method, wafer level bonding method thereof, and circuit structure for wafer level package |
| TW201119090A (en) * | 2009-11-20 | 2011-06-01 | Everlight Electronics Co Ltd | Light emitting diode package and manufacturing method thereof |
| TW201143163A (en) * | 2010-05-20 | 2011-12-01 | Advanced Optoelectronic Tech | LED package |
| TW201327940A (zh) * | 2011-12-30 | 2013-07-01 | Advanced Optoelectronic Tech | 發光二極體封裝結構 |
| TW201344979A (zh) * | 2012-04-27 | 2013-11-01 | Delta Electronics Inc | 發光裝置及其製造方法 |
| TW201511370A (zh) * | 2013-09-03 | 2015-03-16 | Delta Electronics Inc | 發光二極體裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6596410B2 (ja) | 2019-10-23 |
| KR102091534B1 (ko) | 2020-03-23 |
| KR20170080528A (ko) | 2017-07-10 |
| JP2017152681A (ja) | 2017-08-31 |
| TW201724564A (zh) | 2017-07-01 |
| KR20190031450A (ko) | 2019-03-26 |
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