TW201327940A - 發光二極體封裝結構 - Google Patents

發光二極體封裝結構 Download PDF

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TW201327940A
TW201327940A TW101100148A TW101100148A TW201327940A TW 201327940 A TW201327940 A TW 201327940A TW 101100148 A TW101100148 A TW 101100148A TW 101100148 A TW101100148 A TW 101100148A TW 201327940 A TW201327940 A TW 201327940A
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emitting diode
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package structure
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TWI459602B (zh
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Hsin-Chiang Lin
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Advanced Optoelectronic Tech
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting

Abstract

一種發光二極體封裝結構，包括基板、設置於基板上的電極、與所述電極電性連接的短波發光二極體晶片和長波發光二極體晶片以及透鏡。所述透鏡在對應所述長波發光二極體晶片的光路上形成彙聚光線的彙聚部，在對應所述短波發光二極體晶片的光路上形成發散光線的發散部。

Description

發光二極體封裝結構
本發明涉及一種半導體封裝結構，特別是指一種發光二極體封裝結構。
發光二極體做為第三代光源，具有體積小、節能環保、發光效率高等優點，得到越來越廣泛的應用。常用的發光二極體是通過藍光晶片加黃光螢光粉來得到白光，但是這樣得到的白光往往缺少較大波長的紅光部分，使得其演色性較差，即不能獲得高度物體真實顏色重現效果、而導致物體顏色失真。因此經常通過在封裝體中同時封裝補償LED晶片來提高其演色性，但是這種發光二極體封裝結構中的多個LED晶片混光的時候，由於各LED晶片發出不同波長的色光，各LED晶片的發光效率也不相同，一般來說，同樣電流下，短波長晶片的出光效率較高，而對應長波長晶片的出光效率較低，因此，往往在出光面上會產生出射光強度不均勻的問題。
有鑒於此，有必要提供一種光強均勻的高演色性發光二極體封裝結構。
一種發光二極體封裝結構，包括基板、設置於基板上的電極、與所述電極電性連接的短波發光二極體晶片和長波發光二極體晶片以及透鏡。所述透鏡在對應所述長波發光二極體晶片的光路上形成彙聚光線的彙聚部，在對應所述短波發光二極體晶片的光路上形成發散光線的發散部。
該發光二極體封裝結構，由於所述透鏡在對應所述長波發光二極體晶片的光路上形成彙聚光線的彙聚部，在對應所述短波發光二極體晶片的光路上形成發散光線的發散部，使得所述長波發光二極體晶片出射的光線彙聚，增加其出射強度，而所述短波發光二極體晶片出射的光線發散，降低其出射強度，因此使其出光表面各處的光強更加均勻。
以下將結合附圖對本發明作進一步的詳細說明。
請參閱圖1，本發明實施方式提供的一種發光二極體封裝結構10，包括基板11、電極12、短波發光二極體晶片13、長波發光二極體晶片14、螢光粉15，封裝層16、透鏡17及反射杯18。
基板11為一矩形平板，用以承載所述電極12、短波發光二極體晶片13、長波發光二極體晶片14和封裝層16於其上。所述基板11包括上表面111和與上表面111相對且相互平行的下表面112。所述基板11材料為PPA（Polyphthalamide，聚醋酸乙烯酯）等絕緣材料。可以理解的，所述基板11各邊的長度可以相同或不同，進一步的，所述基板11的形狀並不限於矩形，其形狀還可以為圓形等。
電極12形成於所述基板11的表面，該電極12至少為兩個，且每個電極12之間相互電絕緣。所述電極12分別自所述基板11的上表面111延伸至下表面112。所述電極12所用的材料為導電性能較好的金屬材料，如金、銀、銅、鉑、鋁、鎳、錫或鎂中的一種或幾種的合金。
短波發光二極體晶片13和長波發光二極體晶片14貼設於所述電極12上。所述短波發光二極體晶片13和長波發光二極體晶片14通過金屬導線與所述電極12分別電性連接。所述長波發光二極體晶片14設置於所述發光二極體封裝結構10的中心，所述短波發光二極體晶片13的數量為多個並圍繞該長波發光二極體晶片14設置，且所述短波發光二極體晶片13和長波發光二極體晶片14之間採用串聯連接的方式，使該電路配置簡單並簡化制程，而且容易控制線路中的電流。可以理解的，所述短波發光二極體晶片13和長波發光二極體晶片14也可以採用覆晶或共晶的方式固定於基板11表面的電極12上並與所述電極12電連接。本實施例中所用的短波發光二極體晶片13發出波長大於450nm且小於550nm的藍綠光。所述長波發光二極體晶片14發出波長大於570nm的紅光。所述短波發光二極體晶片13表面還覆蓋有螢光粉15，所述短波發光二極體晶片13發出的部分光線激發螢光粉15產生白光。本實施例中所用的螢光顆粒141為黃色螢光粉。
封裝層16形成於所述基板11的上表面111上，覆蓋所述電極12位於所述上表面111的部分，並包覆所述短波發光二極體晶片13和長波發光二極體晶片14。所述封裝層16由封裝膠固化形成。
透鏡17覆蓋於所述封裝層16的外側表面。所述透鏡17包括圓弧狀的彙聚部171和發散部172，所述彙聚部171位於對應所述長波發光二極體晶片14正上方的位置，而所述發散部172位於對應所述短波發光二極體晶片13正上方的位置。由於所述短波發光二極體晶片13為短波長晶片，其發光效率較高，而所述長波發光二極體晶片14為長波長晶片，其發光效率較低。所述彙聚部171彙聚所述長波發光二極體晶片14出射的光線，加強該長波發光二極體晶片14上方的出射光強，而所述發散部172發散所述短波發光二極體晶片13出射的光線，減弱所述短波發光二極體晶片13上方的出射光強，因此使該發光二極體封裝結構10出光表面各處的光強更加均勻，同時由於發光二極體封裝結構10本身尺寸較小，因此也使得該發光二極體封裝結構10的混光更加均勻。如圖2所示，左邊兩條實線部分為左邊的短波發光二極體晶片13出射的光線被分散減弱後的出光強度曲線，虛線部分為長波發光二極體晶片14出射的光線被彙聚加強後的出光強度曲線，右邊兩條實線部分為右邊的短波發光二極體晶片13出射的光線被分散減弱後的出光強度曲線。
反射杯18環繞所述封裝層16和透鏡17，並設於所述上表面111上的電極12的週邊部分，用於反射所述短波發光二極體晶片13和長波發光二極體晶片14所發出的光線。所述反射杯18可採用PPA等材料製成。可以理解的，所述反射杯18也可以僅環繞所述封裝層16設置，所述透鏡17設於所述封裝層16和所述反射杯18的上表面。
本發明實施方式提供的發光二極體封裝結構10，由於所述透鏡17在對應所述長波發光二極體晶片14的光路上形成彙聚光線的彙聚部171，在對應所述短波發光二極體晶片13的光路上形成發散光線的發散部172，使得所述長波發光二極體晶片14出射的光線彙聚，增加其出射強度，而所述短波發光二極體晶片13出射的光線發散，降低其出射強度，因此使其出光表面各處的光強更加均勻。
綜上所述，本發明符合發明專利要件，爰依法提出專利申請。惟，以上所述者僅為本發明之較佳實施例，舉凡熟悉本案技藝之人士，在爰依本發明精神所作之等效修飾或變化，皆應涵蓋於以下之申請專利範圍內。
10．．．發光二極體封裝結構
11．．．基板
111．．．上表面
112．．．下表面
12．．．電極
13．．．短波發光二極體晶片
14．．．長波發光二極體晶片
15．．．螢光粉
16．．．封裝層
17．．．透鏡
171．．．彙聚部
172．．．發散部
18．．．反射杯
圖1是本發明實施方式提供的一種發光二極體封裝結構的出光示意圖。
圖2是圖1中發光二極體封裝結構的出光強度與出光角度的關係圖。
10．．．發光二極體封裝結構
11．．．基板
111．．．上表面
112．．．下表面
12．．．電極
13．．．短波發光二極體晶片
14．．．長波發光二極體晶片
15．．．螢光粉
16．．．封裝層
17．．．透鏡
171．．．彙聚部
172．．．發散部
18．．．反射杯

Claims (11)

  1. 一種發光二極體封裝結構，包括基板、設置於基板上的電極、與所述電極電性連接的短波發光二極體晶片和長波發光二極體晶片以及透鏡，其改進在於，所述透鏡在對應所述長波發光二極體晶片的光路上形成彙聚光線的彙聚部，在對應所述短波發光二極體晶片的光路上形成發散光線的發散部。
  2. 如申請專利範圍第1項所述的發光二極體封裝結構，其中：所述透鏡包括一靠近基板的入光面和一遠離基板的出光面，所述入光面為一平面，所述出光面對應所述長波發光二極體晶片的聚光部為一凸起，對應所述短波發光二極體晶片的發散部為一凹陷。
  3. 如申請專利範圍第1項所述的發光二極體封裝結構，其中：所述短波發光二極體晶片和長波發光二極體晶片之間採用串聯連接的方式。
  4. 如申請專利範圍第1項所述的發光二極體封裝結構，其中：所述短波發光二極體晶片為藍光LED晶片，其發出波長大於450nm且小於550nm的藍綠光。
  5. 如申請專利範圍第4項所述的發光二極體封裝結構，其中：所述長波發光二極體晶片為紅光LED晶片，其發出波長大於570nm的紅光。
  6. 如申請專利範圍第5項所述的發光二極體封裝結構，其中：還包括覆蓋短波發光二極體晶片的黃色螢光粉。
  7. 如申請專利範圍第1項至第6項任一項所述的發光二極體封裝結構，其中：長波發光二極體晶片位於基板中部，短波發光二極體晶片位於長波發光二極體晶片附近。
  8. 如申請專利範圍第1項至第6項任一項所述的發光二極體封裝結構，其中：短波發光二極體晶片的數量為多個，且環繞長波發光二極體設置。
  9. 如申請專利範圍第1項至第6項任一項所述的發光二極體封裝結構，其中：還包括有反射杯，反射杯環繞所述短波發光二極體晶片和長波發光二極體晶片設置。
  10. 如申請專利範圍第9項所述的發光二極體封裝結構，其中：還包括設置於反射杯內的封裝層，所述透鏡設於所述封裝層和所述反射杯的上表面。
  11. 如申請專利範圍第9項所述的發光二極體封裝結構，其中：還包括設置於反射杯內的封裝層，所述反射杯環繞所述封裝層及所述透鏡設置。
TW101100148A 2011-12-30 2012-01-03 發光二極體封裝結構 TWI459602B (zh)

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