TWI661582B - 主動式抑制藍光溢漏之ｌｅｄ結構 - Google Patents

主動式抑制藍光溢漏之ｌｅｄ結構 Download PDF

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TWI661582B
TWI661582B TW105107096A TW105107096A TWI661582B TW I661582 B TWI661582 B TW I661582B TW 105107096 A TW105107096 A TW 105107096A TW 105107096 A TW105107096 A TW 105107096A TW I661582 B TWI661582 B TW I661582B
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blue light
light
led structure
wavelength conversion
circuit substrate
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TW201733168A (zh
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Ching Cherng Sun
孫慶成
Tsung Hsun Yang
楊宗勳
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National Central University
國立中央大學
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Priority to CN201610143476.XA priority patent/CN107170871B/zh
Priority to US15/167,455 priority patent/US20170263799A1/en
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Priority to US15/980,166 priority patent/US20180337311A1/en
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    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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    • H05B45/58—Circuit arrangements for operating light-emitting diodes [LED] responsive to malfunctions or undesirable behaviour of LEDs; responsive to LED life; Protective circuits involving end of life detection of LEDs

Abstract

本發明為主動式抑制藍光溢漏之LED結構，其包括：一電路基板；至少一藍光晶粒；一光偵測器；以及一波長轉換層，其中，電路基板之電路接收光偵測器之偵測訊號並據以關閉藍光晶粒。藉由本發明之實施，當LED結構到達使用壽命時，主動式抑制藍光溢漏之LED結構可以關閉藍光晶粒，避免LED結構釋放出大量藍光對使用者造成傷害。

Description

主動式抑制藍光溢漏之LED結構
本發明係關於一種LED結構，特別是關於一種具有光偵測器之主動式抑制藍光溢漏之LED結構。
在生活現代化的同時，人類對地球的破壞也日趨嚴重。為了地球環保及永續生存的期望，節能光源之使用，開始大量普及，其中尤以電能需求量甚低，而又能提供足夠亮度需求的LED成長最為快速。
現今使用的LED之壽命皆規範為到LED發出光線之流明值降至熱穩定值之70%時，即表示此LED已經不堪使用(業界稱為L70)。但在實際使用上，白光LED在將要而尚未到達L70時，便會因為發熱而造成效率下降，這樣的效率下降又會再造成更多熱產生，從而導致白光LED使用的螢光材料吸收下降，造成大量的藍光漏出。
另一方面，也由於LED的使用量大增，越來越多的研究資料相繼揭露了藍光對人類眼睛結構所具有的強大破壞力，若人們長時間暴露於藍光的照射之下，甚至極有可能對眼睛造成無法彌補的傷害。
有鑒於此，如何發展出一種簡單有效的技術或LED結構，可以在白光LED大量放熱及大量釋放出藍光之前，即將內部的藍光LED關 掉，以阻絕藍光之漏出，避免造成不必要的傷害，又能夠因為關掉LED，告知了使用者光源需要更換，便成為LED產業，甚至整個照明應用產業一個重要的進步，進而能維護眼睛的健康、提升人類整體的生活品質。
本發明為主動式抑制藍光溢漏之LED結構，其包括：一電路基板；至少一藍光晶粒；一光偵測器；以及一波長轉換層，其中，電路基板之電路接收光偵測器之偵測訊號並據以關閉藍光晶粒。藉由本發明之實施，當LED結構到達使用壽命時，主動式抑制藍光溢漏之LED結構可以關閉藍光晶粒，避免LED結構釋放出大量藍光對使用者造成傷害。
本發明係提供一種主動式抑制藍光溢漏之LED結構，其包括：一電路基板，其具有一上表面；至少一藍光晶粒，固設於上表面並與電路基板電性連接；一光偵測器，固設於上表面且電性連接於電路基板，光偵測器偵測藍光晶粒之背向散射光，當背向散射光低於一預設基準，光偵測器產生一偵測訊號；以及一波長轉換層，固設於上表面並包覆藍光晶粒及光偵測器；其中，電路基板之電路接收偵測訊號並據以關閉藍光晶粒。
本發明又提供一種主動式抑制藍光溢漏之LED結構，其包括：一電路基板，其具有一上表面；至少一藍光晶粒，固設於上表面並與電路基板電性連接；一光偵測器，固設於上表面且電性連接於電路基板，光偵測器偵測藍光晶粒之背向散射光，當背向散射光低於一預設基準，光偵測器產生一偵測訊號；以及一波長轉換層，固設並覆蓋於藍光晶粒之一出光面；其中，電路基板之電路接收偵測訊號並據以關閉藍光晶粒。
藉由本發明的實施，至少可以達到下列進步功效：
一、不須複雜製程或製造設備，實施成本低廉。
二、可以即時關閉藍光晶粒，避免LED結構釋放出大量藍光對使用者造成傷害。
三、主動告知使用者，LED結構已經需要更換，具有智慧型應用之功效。
為了使任何熟習相關技藝者了解本發明之技術內容並據以實施，且根據本說明書所揭露之內容、申請專利範圍及圖式，任何熟習相關技藝者可輕易地理解本發明相關之目的及優點，因此將在實施方式中詳細敘述本發明之詳細特徵以及優點。
100‧‧‧主動式抑制藍光溢漏之LED結構
200‧‧‧主動式抑制藍光溢漏之LED結構
10‧‧‧電路基板
11‧‧‧上表面
20‧‧‧藍光晶粒
21‧‧‧出光面
30‧‧‧光偵測器
40‧‧‧波長轉換層
50‧‧‧封裝透鏡
[第1圖]係為本發明實施例之一種主動式抑制藍光溢漏之LED結構之剖視示意圖。
[第2圖]係為本發明實施例之另一種主動式抑制藍光溢漏之LED結構之剖視示意圖。
[第3圖]係為第1圖實施例之主動式抑制藍光溢漏之LED結構進一步具有封裝透鏡之剖視示意圖。
[第4圖]係為第2圖實施例之主動式抑制藍光溢漏之LED結構進一步具有封裝透鏡之剖視示意圖。
請參考如第1圖所示，為實施例之一種主動式抑制藍光溢漏之LED結構100，其包括：一電路基板10；至少一藍光晶粒20；一光偵 測器30；以及一波長轉換層40。
如第1圖所示，主動式抑制藍光溢漏之LED結構100之電路基板10，係可以為一般FRP、陶瓷或軟性的電路板所形成，電路基板10並且具有一上表面11。
如第1圖所示，至少一藍光晶粒20，固設於電路基板10之上表面11並與電路基板10電性連接。藍光晶粒20為發出藍光之LED晶粒，可以依照亮度等及或需求決定使用之藍光晶粒20的數量。
同樣如第1圖所示，光偵測器30，係亦固設於電路基板10之上表面11且電性連接於電路基板10，光偵測器30係用以偵測藍光晶粒20之背向散射光，並產生控制用的偵測訊號。其中，電路基板10上或電路基板10內之至少一組電路，接收光偵測器30產生的偵測訊號，並可以據以關閉藍光晶粒20。
再如第1圖所示，波長轉換層40，則固設於電路基板10之上表面11並包覆藍光晶粒20及光偵測器30。其中波長轉換層40係可以為一螢光粉層、一量子點層(quantum dot layer)或是一種光致發光材料所形成之材料層。
再者，波長轉換層40也可以為黃色螢光粉層、紅綠混合之螢光粉層、或是橘綠混合之螢光粉層。
而光偵測器30所接收之背向散射光，係為自藍光晶粒20發射並由波長轉換層40反射而照射至光偵測器30之背向散射光。
如此，藉由設置於電路基板10上表面11之光偵測器30，隨時偵測白光LED光源內藍光晶粒20之背向散射光，當背向散射光大幅減少而低於一個預設基準時，表示白光LED光源正處於使用壽命將至，造成波長轉換層40溫度大幅升高而減少混光效果，並形成藍光大幅洩漏，光 偵測器30便可以產生偵測訊號，主動經由電路基板10之電路關閉白光LED光源內之藍光晶粒20，避免對人們造成不必要的傷害。
接著，請參考如第3圖所示，主動式抑制藍光溢漏之LED結構100可以進一步具有一封裝透鏡50，固設於電路基板10之上表面11，並且包覆波長轉換層40、藍光晶粒20及光偵測器30。
而前述之波長轉換層40或封裝透鏡50固設於上表面11之方式，可以是簡單又節省成本的以膠體固著於電路基板10的上表面11。
接下來，請參考如第2圖所示，為實施例之另一種主動式抑制藍光溢漏之LED結構200，其包括：一電路基板10；至少一藍光晶粒20；一光偵測器30；以及一波長轉換層40。
如第2圖所示，主動式抑制藍光溢漏之LED結構200之波長轉換層40，則係僅固設並覆蓋於藍光晶粒20之出光面21。
除此之外，主動式抑制藍光溢漏之LED結構200之電路基板10、藍光晶粒20、及光偵測器30的結構特徵及連結關係，皆與主動式抑制藍光溢漏之LED結構100之電路基板10、藍光晶粒20、光偵測器30相同，於此不再贅述。
而如第4圖所示，主動式抑制藍光溢漏之LED結構200亦可以進一步具有一封裝透鏡50，固設於電路基板10之上表面11，並且包覆藍光晶粒20、光偵測器30及波長轉換層40。
如第3圖及第4圖所示，封裝透鏡50之使用，不但可以保護其所包覆的波長轉換層40、藍光晶粒20及光偵測器30，經由選擇不同形式或功能的封裝透鏡50，更可以改變主動式抑制藍光溢漏之LED結構100或主動式抑制藍光溢漏之LED結構200所照射出的光線或光束之形狀、焦點、波束大小、或角度。
同樣的，主動式抑制藍光溢漏之LED結構200藉由設置於電路基板10上表面11之光偵測器30，隨時偵測白光LED光源內藍光晶粒20之背向散射光，當背向散射光大幅減少而低於一個預設基準時，表示白光LED光源正處於使用壽命將至，造成波長轉換層40溫度大幅升高而減少混光效果，並形成藍光大幅洩漏，光偵測器30便可以產生偵測訊號，主動經由電路基板10之電路關閉白光LED光源內之藍光晶粒20，避免對人們造成不必要的傷害。
惟上述各實施例係用以說明本發明之特點，其目的在使熟習該技術者能瞭解本發明之內容並據以實施，而非限定本發明之專利範圍，故凡其他未脫離本發明所揭示之精神而完成之等效修飾或修改，仍應包含在以下所述之申請專利範圍中。

Claims (10)

  1. 一種主動式抑制藍光溢漏之LED結構，其包括：一電路基板，其具有一上表面；至少一藍光晶粒，固設於該上表面並與該電路基板電性連接；一光偵測器，固設於該上表面且電性連接於該電路基板，該光偵測器偵測該藍光晶粒之背向散射光，當該背向散射光低於一預設基準，該光偵測器產生一偵測訊號；以及一波長轉換層，固設於該上表面並包覆該藍光晶粒及該光偵測器；其中，該電路基板之電路接收該偵測訊號並據以關閉該藍光晶粒。
  2. 如申請專利範圍第1項所述之主動式抑制藍光溢漏之LED結構，其中該波長轉換層係為一螢光粉層、一量子點層(quantum dot layer)或一光致發光材料所形成之材料層。
  3. 如申請專利範圍第1項所述之LED結構，其中該波長轉換層係為黃色、紅綠混合或橘綠混合之螢光粉層。
  4. 如申請專利範圍第1項所述之LED結構，其中該光偵測器係接收自該藍光晶粒發射並自該波長轉換層反射之背向散射光。
  5. 如申請專利範圍第1項所述之LED結構，其進一步具有一封裝透鏡，固設於該上表面並包覆該波長轉換層、該藍光晶粒及該光偵測器。
  6. 一種主動式抑制藍光溢漏之LED結構，其包括：一電路基板，其具有一上表面；至少一藍光晶粒，固設於該上表面並與該電路基板電性連接；一光偵測器，固設於該上表面且電性連接於該電路基板，該光偵測器偵測該藍光晶粒之背向散射光，當該背向散射光低於一預設基準，該光偵測器產生一偵測訊號；以及一波長轉換層，固設並覆蓋於該藍光晶粒之一出光面；其中，該電路基板之電路接收該偵測訊號並據以關閉該藍光晶粒。
  7. 如申請專利範圍第6項所述之主動式抑制藍光溢漏之LED結構，其中該波長轉換層係為一螢光粉層、一量子點層(quantum dot layer)或一光致發光材料所形成之材料層。
  8. 如申請專利範圍第6項所述之LED結構，其中該波長轉換層係為黃色、紅綠混合或橘綠混合之螢光粉層。
  9. 如申請專利範圍第6項所述之LED結構，其中該光偵測器係接收自該藍光晶粒發射並自該波長轉換層反射之背向散射光。
  10. 如申請專利範圍第6項所述之LED結構，其進一步具有一封裝透鏡，固設於該上表面並包覆該波長轉換層、該藍光晶粒及該光偵測器。
TW105107096A 2016-03-08 2016-03-08 主動式抑制藍光溢漏之ｌｅｄ結構 TWI661582B (zh)

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CN201610143476.XA CN107170871B (zh) 2016-03-08 2016-03-14 主动式抑制蓝光溢漏的led结构
US15/167,455 US20170263799A1 (en) 2016-03-08 2016-05-27 Active blue light leakage preventing led structures
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TW200843145A (en) * 2006-12-15 2008-11-01 Philips Lumileds Lighting Co Tunable white point light source using a wavelength converting element
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US20100148191A1 (en) * 2008-12-16 2010-06-17 Lednovation, Inc. High Luminous Flux Warm White Solid State Lighting Device
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TW200843145A (en) * 2006-12-15 2008-11-01 Philips Lumileds Lighting Co Tunable white point light source using a wavelength converting element
US20100109022A1 (en) * 2008-11-06 2010-05-06 Samsung Electronics Co., Ltd. Light emitting device and fabricating method thereof
US20100148191A1 (en) * 2008-12-16 2010-06-17 Lednovation, Inc. High Luminous Flux Warm White Solid State Lighting Device
TW201038062A (en) * 2009-01-26 2010-10-16 Philips Lumileds Lighting Co Matching LED flash to camera's ambient light compensation algorithm
US20120181565A1 (en) * 2009-06-09 2012-07-19 Koninklijke Philips Electronics N.V. Led with remote phosphor layer and reflective submount

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