TWI581465B - Chip scale packaging light emitting device and manufacturing method of the same - Google Patents
Chip scale packaging light emitting device and manufacturing method of the same Download PDFInfo
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Description
本發明有關一種發光裝置及其製造方法，特別關於一種具有覆晶式LED晶片之晶片級封裝發光裝置及其製造方法。 The present invention relates to a light emitting device and a method of fabricating the same, and more particularly to a wafer level package light emitting device having a flip chip type LED chip and a method of fabricating the same.
LED(發光二極體)晶片係普遍地使用來提供照明、顯示或指示用的光源，而LED晶片通常會設置於一封裝構造(其中可包含螢光材料)中，以成為一發光裝置。 LED (Light Emitting Diode) wafers are commonly used to provide illumination, display or indication light sources, and LED wafers are typically disposed in a package configuration (which may include phosphor material) to be a light emitting device.
隨著LED技術的發展，晶片級封裝(chip-scale package，CSP)發光裝置以其明顯的優勢於近年開始受到廣大的重視。以最廣泛被使用之白光CSP發光裝置為例，其通常由一藍光LED晶片與一包覆LED晶片的螢光結構所組成；其中，藍光LED晶片通常為一覆晶式LED晶片，具有從上表面與側部立面發出藍光之特性，又，螢光結構需將上表面與側部立面所發出之藍光均勻地轉換波長，使通過螢光結構後所產生之不同波長的光線以適當比例混合後形成均勻的白光；為達成此均勻地轉換波長之目的，螢光結構需在上表面與側部立面具有相同的厚度，此即所謂共形化分佈(conformal coating)之螢光結構。 With the development of LED technology, chip-scale package (CSP) illuminators have received much attention in recent years due to their obvious advantages. For example, the most widely used white light CSP light-emitting device is generally composed of a blue LED chip and a fluorescent structure covering the LED chip; wherein the blue LED chip is usually a flip-chip LED chip, having The surface and the side façade emit blue light. In addition, the fluorescent structure needs to uniformly convert the blue light emitted by the upper surface and the side façade to a wavelength, so that the light of different wavelengths generated after passing through the fluorescent structure is appropriately proportioned. After mixing, uniform white light is formed; for the purpose of uniformly converting the wavelength, the phosphor structure needs to have the same thickness on the upper surface and the side elevation, which is a so-called conformal coating fluorescent structure.
相較於傳統支架型LED與陶瓷基板型LED，CSP發光裝置具有以下優點：(1)不需要金線及額外的支架或陶瓷基板等副載具(submount)，因此可明顯節省材料成本；(2)因省略了支架或陶瓷基板等副載具，可進一步降低LED晶片與散熱板之間的熱阻，因此在相同操作條件下將具有較低的操作溫度，或進而增加操作功率；(3)較低的操作溫度可使LED具有較高的晶片量子轉換效率；(4)大幅縮小的封裝尺寸使得在設計模組或燈具時，具有更大的設計彈性；(5)具有小發光面積，因此可縮小光展量(Etendue)，使得二次光學更容易設計，亦或藉此獲得高發光強度(intensity)。 Compared with the traditional bracket type LED and ceramic substrate type LED, the CSP light-emitting device has the following advantages: (1) no need for a gold wire and an additional submount of a bracket or a ceramic substrate, thereby significantly saving material cost; 2) Since the sub-carrier such as the bracket or the ceramic substrate is omitted, the thermal resistance between the LED chip and the heat sink can be further reduced, so that under the same operating conditions, the operating temperature will be lower, or the operating power will be increased; (3) The lower operating temperature allows the LED to have higher wafer quantum conversion efficiency; (4) the greatly reduced package size allows for greater design flexibility when designing modules or luminaires; (5) has a small illuminating area, Therefore, the etendue can be reduced, making the secondary optics easier to design, or thereby obtaining high luminous intensity.
然而，CSP發光裝置因為不需額外的基板或支架等副載具，故CSP發光裝置中的螢光結構僅與LED晶片相接觸；由於兩者之間的接觸面積相當有限，往往導致兩者之間的結合力道不足；又LED晶片與螢光結構的熱膨脹係數通常具有明顯的差異，在發光裝置操作時所產生的溫度變化下，熱膨脹係數的不匹配所引起的內應力將使接合力道已不足的螢光結構容易從LED晶片上剝離(delamination)，導致CSP發光裝置失效。這項先天上的特性嚴重影響了現有CSP發光裝置的可靠度性能。 However, since the CSP illuminating device does not require an additional sub-carrier such as a substrate or a bracket, the fluorescent structure in the CSP illuminating device is only in contact with the LED chip; since the contact area between the two is rather limited, the two are often Insufficient bonding force; the thermal expansion coefficient of the LED chip and the fluorescent structure usually has a significant difference. Under the temperature change caused by the operation of the illuminating device, the internal stress caused by the mismatch of the thermal expansion coefficient will make the bonding force insufficient. The fluorescent structure is easily delaminated from the LED wafer, causing the CSP illuminator to fail. This innate feature severely affects the reliability performance of existing CSP illuminators.
再者，現有CSP發光裝置在製造的過程中，會先將螢光材料混合於黏合材料(binder)中，例如高分子材料，再透過模造成型(molding)、印刷(printing)或噴塗(spraying)等方法來形成螢光結構；當螢光材料混合於高分子材料中時，將形成螢光膠體(phosphor slurry)，以此進行螢光結構的製造時，對螢光結構幾何尺寸的控制需要很高的精準度，才能獲得精確的發光顏色控制；又，現有方法僅能控制螢光結構的幾何外型尺寸，而 難以控制螢光材料在螢光膠體(或螢光結構)內的分佈狀態，而螢光材料的分佈狀態卻是決定其發光性能的關鍵因素。因此，這兩項先天物理特性使得螢光材料難以形成共形化分佈(conformal coating)，故增加了CPS發光裝置在大量製作上達到光學一致性的難度。 Furthermore, in the process of manufacturing the existing CSP illuminating device, the fluorescent material is first mixed in a binder, such as a polymer material, and then molded, printing, or spraying. The method is to form a fluorescent structure; when the fluorescent material is mixed in the polymer material, a phosphor slurry is formed, and when the fluorescent structure is manufactured, the control of the geometry of the fluorescent structure is required. High precision for precise illuminating color control; however, the existing method can only control the geometric shape of the fluorescent structure, and It is difficult to control the distribution of the fluorescent material in the fluorescent colloid (or fluorescent structure), and the distribution of the fluorescent material is a key factor determining its luminescent properties. Therefore, these two innate physical properties make it difficult for the fluorescent material to form a conformal coating, which increases the difficulty of achieving optical consistency in a large number of fabrications of the CPS illuminating device.
例如以螢光膠體透過模造成型(或印刷)進行CSP發光裝置之螢光結構製作時，複數個LED晶片(形成一LED晶片陣列)與模具內表面(或與印刷刮刀及鋼板)之間的相對位置的誤差，將造成複數個LED晶片上表面及立面所形成的螢光結構之厚度一致性不足；同時，後續若須以切割分離複數個CSP發光裝置時，螢光結構的切割位置的誤差將使LED晶片立面上的螢光結構之厚度難以控制；再加上無法有效控制螢光材料在膠體內的分佈；這些因素造成了無法形成共形化分佈(conformal coating)之螢光材料，使LED晶片所發射出的光線經過螢光結構後，其顏色不一致，因而造成空間色均勻性(spatial color uniformity)不佳，且色溫(Correlated Color Temperature，CCT)分級(binning)集中度亦不佳，導致生產良率下降。 For example, when a fluorescent colloid is used to form (or print) a fluorescent structure of a CSP light-emitting device, a plurality of LED chips (forming an array of LED chips) and a surface of the mold (or a printing blade and a steel plate) are opposed. The position error will result in insufficient thickness consistency of the fluorescent structure formed on the upper surface and the façade of the plurality of LED chips. Meanwhile, if the subsequent CSP illuminating device is separated by cutting, the error of the cutting position of the fluorescent structure is The thickness of the phosphor structure on the façade of the LED wafer will be difficult to control; in addition, the distribution of the phosphor material in the gel body cannot be effectively controlled; these factors cause a fluorescent material that cannot form a conformal coating. After the light emitted by the LED chip passes through the fluorescent structure, the colors thereof are inconsistent, thereby causing poor spatial color uniformity, and the color temperature (CCT) classification (binning) concentration is also poor. , leading to a decline in production yield.
此外，若採用噴塗方式來製作螢光結構時，雖可避免在模造成型(或印刷製程)中LED晶片在對位誤差上所遭遇的相關問題，但螢光材料在噴塗時卻因重力的作用而不易附著在LED晶片的垂直立面，導致螢光材料不易在立面上形成連續分佈，這將造成在LED晶片的立面上螢光材料在高分子材料中不連續，雖然高分子材料可在立面形成連續分佈透明結構，但因局部缺乏螢光材料以致產生較大面積連續性的光學上之透明「空孔」，使藍光從空孔洩漏，即未經過螢光材料波長轉換而直接穿透封裝構造，造成CSP發光裝置側面容易洩漏藍光，以致CSP發光裝置正面光線與側 面光線的顏色不一致而形成藍暈，因此，現有噴塗製程亦無法形成共形化分佈(conformal coating)之螢光材料；又，若採用噴塗方式於LED晶片的上表面形成較薄的螢光結構時，因螢光材料與高分子材料已預混合形成螢光膠體，螢光材料(通常為顆粒狀)本身的聚集現象(particle aggregation)將使螢光材料出現明顯的分佈不連續，此亦會形成螢光材料的空孔，造成光斑(藍光斑點)現象；因此，採用噴塗方式製作CSP發光裝置時，空孔所造成的藍光洩漏會使局部區域藍光強度過高，除了會使空間色均勻性不佳之外，亦會增加藍光對人眼造成的傷害；同時，不一致的螢光材料分佈會使色溫分級集中度不佳；又，藍光大量洩漏將使螢光材料無法有效轉換藍光波長，也會造成光轉換效率的下降。 In addition, if the fluorescent structure is fabricated by spraying, although the problems encountered in the alignment error of the LED chip in the mold forming type (or printing process) can be avoided, the fluorescent material is affected by gravity during spraying. It is not easy to adhere to the vertical façade of the LED chip, which causes the fluorescent material to not form a continuous distribution on the façade, which will cause the phosphor material to be discontinuous in the polymer material on the façade of the LED wafer, although the polymer material can Forming a continuous distribution of transparent structures on the façade, but due to the local lack of fluorescent material, resulting in a large area of optically transparent "holes", allowing blue light to leak from the holes, that is, without direct conversion of the wavelength of the fluorescent material Through the package structure, the side of the CSP illuminator is easy to leak blue light, so that the front light and side of the CSP illuminator The color of the surface light is inconsistent and forms a blue halo. Therefore, the existing spraying process cannot form a conformal coating of the fluorescent material; and if a spray method is used to form a thin fluorescent structure on the upper surface of the LED wafer. At the same time, since the fluorescent material and the polymer material are premixed to form a fluorescent colloid, the particle aggregation of the fluorescent material (usually granular) will cause a distinct distribution discontinuity of the fluorescent material, which will also The formation of pores of the fluorescent material causes a spot (blue light spot) phenomenon; therefore, when the CSP light-emitting device is fabricated by spraying, the blue light leakage caused by the void causes the blue intensity of the local region to be too high, in addition to the spatial color uniformity. In addition, it will also increase the damage caused by blue light to the human eye. At the same time, the inconsistent distribution of fluorescent materials will result in poor color temperature grading. In addition, a large amount of blue light leakage will make fluorescent materials unable to effectively convert blue wavelengths. Causes a decrease in light conversion efficiency.
有鑑於此，提供一種可增強螢光結構與LED晶片介面的附著力(即改善發光裝置的可靠度)，並增加CSP發光裝置空間色均勻性、提升色溫分級集中度與提升發光效率等的技術方案，為目前業界發展CSP發光裝置製造技術亟待解決的問題。 In view of the above, there is provided a technology for enhancing adhesion of a phosphor structure to an LED chip interface (ie, improving reliability of a light-emitting device), increasing spatial color uniformity of a CSP light-emitting device, increasing color temperature grading concentration, and improving luminous efficiency. The solution is an urgent problem to be solved in the current development of CSP illuminating device manufacturing technology.
本發明之一目的在於提供一種發光裝置及其製造方法，其能改善發光裝置的可靠度、空間色均勻性、色溫分級集中度及發光效率，且可具有小發光面積及低熱阻。 An object of the present invention is to provide a light-emitting device and a method of fabricating the same that can improve the reliability, spatial color uniformity, color temperature grading concentration, and luminous efficiency of the light-emitting device, and can have a small light-emitting area and low thermal resistance.
為達上述目的，本發明所揭露的一種發光裝置包含一LED晶片與一封裝構造，其中該封裝構造包含一緩衝結構、一螢光結構及一透光結構；該LED晶片為一覆晶式LED晶片，具有一上表面、相對於該上表面 之一下表面、一立面及一電極組，該立面形成於該上表面與該下表面之間，該電極組設置於該下表面上；該緩衝結構為一相對軟性材質，亦可稱為軟性緩衝結構，可由例如一高分子材料製成，其包含一頂部及一側部，該頂部形成於該上表面上，而該側部形成於該立面上，該頂部具有一凸狀曲面，而該側部具有一連接該凸狀曲面的外緣面；該螢光結構沿著該凸狀曲面及該外緣面，形成於該軟性緩衝結構上，該螢光結構通常包含一高分子材料(例如矽膠、環氧樹脂或橡膠等)及一螢光材料；該透光結構形成於該螢光結構上，其中該透光結構的一硬度不小於該軟性緩衝結構的一硬度。 In order to achieve the above objective, a light emitting device according to the present invention comprises an LED chip and a package structure, wherein the package structure comprises a buffer structure, a fluorescent structure and a light transmitting structure; the LED chip is a flip chip LED a wafer having an upper surface opposite to the upper surface a lower surface, a vertical surface, and an electrode group formed between the upper surface and the lower surface, the electrode group is disposed on the lower surface; the buffer structure is a relatively soft material, which may also be referred to as The flexible buffer structure may be made of, for example, a polymer material, and includes a top portion and a side portion formed on the upper surface, and the side portion is formed on the vertical surface, the top portion having a convex curved surface. The side portion has an outer peripheral surface connecting the convex curved surface; the fluorescent structure is formed on the soft buffer structure along the convex curved surface and the outer peripheral surface, and the fluorescent structure usually comprises a polymer material (such as silicone, epoxy or rubber, etc.) and a phosphor material; the light transmissive structure is formed on the phosphor structure, wherein a hardness of the light transmissive structure is not less than a hardness of the soft buffer structure.
為達上述目的，本發明所揭露的一種發光裝置的製造方法包含：放置複數個LED晶片於一離型材料上，以形成一LED晶片陣列；形成複數個封裝構造於該等LED晶片上，該等封裝構造彼此相連；以及切割該等封裝構造。此外，在切割該等封裝構造之前或之後，移除該離型材料。 In order to achieve the above object, a method for fabricating a light-emitting device according to the present invention includes: placing a plurality of LED chips on a release material to form an LED wafer array; forming a plurality of package structures on the LED chips, The package structures are connected to each other; and the package structures are cut. Additionally, the release material is removed before or after cutting the package construction.
上述形成該等封裝構造於該等LED晶片上的步驟更包含：形成複數個軟性緩衝結構於該等LED晶片上，並使得各該軟性緩衝結構的一頂部設置於各該LED晶片之一上表面、且使各該軟性緩衝結構的一側部設置於各該LED晶片之一立面，其中該頂部具有一凸狀曲面，而該側部具有一連接該凸狀曲面的外緣面；沿著該等軟性緩衝結構的該等凸狀曲面及該等外緣面，形成複數個螢光結構於該等軟性緩衝結構上，其中，可選擇性地採用可分別沉積螢光材料與高分子材料之方法形成複數個螢光結構；及形成複數個透光結構於該等螢光結構上，其中該透光結構的一硬度不小於該軟性緩衝結構的一硬度。 The step of forming the package structures on the LED chips further includes: forming a plurality of soft buffer structures on the LED chips, and having a top portion of each of the flexible buffer structures disposed on an upper surface of each of the LED chips And a side portion of each of the flexible buffer structures is disposed on one of the façades of each of the LED chips, wherein the top portion has a convex curved surface, and the side portion has an outer peripheral surface connecting the convex curved surfaces; The convex curved surfaces of the soft buffer structures and the outer peripheral surfaces form a plurality of fluorescent structures on the soft buffer structures, wherein the fluorescent material and the polymer material can be selectively deposited separately. The method comprises forming a plurality of phosphor structures; and forming a plurality of light transmissive structures on the phosphor structures, wherein a hardness of the light transmissive structures is not less than a hardness of the soft buffer structure.
藉此，本發明的發光裝置及其製造方法能至少提供以下的有 益效果：相比於現有CSP發光裝置之螢光結構直接地接觸LED晶片，部分螢光材料(通常為一陶瓷材料，其與晶片間無黏著性)減低了高分子材料與LED晶片的接觸面積，因而降低了螢光結構與LED晶片介面之附著力，而本發明所揭露之軟性緩衝結構可使其本身之高分子材料完全與LED晶片接觸，因此透過緩衝結構可明顯提升螢光結構與LED晶片之間的結合力量(bonding force)。此外，軟性緩衝結構的硬度較低，可減緩因各元件之間熱膨脹係數不匹配所產生的內應力，故軟性緩衝結構可作為一應力減緩結構。因此，本發明的發光裝置在運作時(內部溫度會明顯變化)，不易有剝離(delamination)現象產生，即封裝構造不易從LED晶片分離，增加了發光裝置的可靠度性能。 Thereby, the light-emitting device of the present invention and the method of manufacturing the same can provide at least the following Benefit: Compared with the fluorescent structure of the existing CSP illuminating device, the fluorescent material directly contacts the LED chip, and part of the fluorescent material (usually a ceramic material, which has no adhesion to the wafer) reduces the contact area between the polymer material and the LED chip. Therefore, the adhesion between the fluorescent structure and the LED chip interface is reduced, and the soft buffer structure disclosed in the present invention can completely contact the LED material of the LED material, so that the fluorescent structure and the LED can be obviously improved through the buffer structure. Bonding force between the wafers. In addition, the soft buffer structure has a low hardness, which can alleviate the internal stress caused by the mismatch of thermal expansion coefficients between the components, so the soft buffer structure can be used as a stress relieving structure. Therefore, in the operation of the light-emitting device of the present invention (the internal temperature changes significantly), the delamination phenomenon is less likely to occur, that is, the package structure is not easily separated from the LED wafer, and the reliability performance of the light-emitting device is increased.
再者，由於本發明所揭露之軟性緩衝結構的側部的外緣面為相對平緩曲面，可使LED晶片的立面所造成之斷差(step)較為平緩(smooth)，相較於現有技術中螢光材料因重力的作用導致螢光材料在高分子材料中沉澱，而不易均勻附著在LED晶片的垂直立面，因此在立面上無法形成連續且共形化分佈(conformal coating)之螢光材料；本發明所揭露之緩衝結構可大幅減緩因重力的作用所導致的螢光材料沉澱之現象，因此可在緩衝材料側部形成連續分佈的螢光材料，產生近似共形化分佈(approximately conformal coating)之螢光結構，故而解決了CSP發光裝置藍光洩漏之問題，如此，本發明的發光裝置具有較佳的空間色均勻性，也因此提升了色溫分級集中度。 Furthermore, since the outer peripheral surface of the side portion of the soft buffer structure disclosed in the present invention has a relatively gentle curved surface, the step caused by the elevation of the LED chip can be smoothed, compared to the prior art. The fluorescent material in the middle fluorescent material precipitates in the polymer material due to gravity, and does not easily adhere to the vertical façade of the LED chip. Therefore, a continuous and conformal coating of the fluorescent material cannot be formed on the façade. Light-emitting material; the buffer structure disclosed by the invention can greatly slow down the precipitation of the fluorescent material caused by the action of gravity, so that a continuously distributed fluorescent material can be formed on the side of the buffer material to produce an approximate conformal distribution (approximately The fluorescent structure of the conformal coating solves the problem of blue light leakage of the CSP illuminating device. Thus, the illuminating device of the present invention has better spatial color uniformity and thus increases the color temperature grading concentration.
又，本發明的發光裝置在形成螢光結構時，可採用分別沉積螢光材料與高分子材料的方法，因此可大幅減少螢光材料聚集的現象，使 得在形成較薄的螢光結構時仍可獲得分佈均勻的螢光材料，避免了空孔的產生，因此不會產生光斑現象，同時亦可形成高密度堆疊的螢光結構。由於改善了光斑現象與藍光之洩漏，並且具有高密度堆疊的螢光結構，因此本發明的發光裝置具有較佳的螢光結構之光轉換效率，故提升了整體發光效率，同時亦降低了藍光對人眼傷害的風險。 Moreover, in the light-emitting device of the present invention, when a fluorescent structure is formed, a method of depositing a fluorescent material and a polymer material separately can be employed, so that the phenomenon of aggregation of the fluorescent material can be greatly reduced, so that It is possible to obtain a uniformly distributed fluorescent material when forming a thin fluorescent structure, thereby avoiding the generation of voids, thereby not generating a spot phenomenon, and also forming a high-density stacked fluorescent structure. The light-emitting device of the present invention has better light conversion efficiency of the fluorescent structure due to improved spot phenomenon and blue light leakage, and has a high-density stacked fluorescent structure, thereby improving overall luminous efficiency and reducing blue light. The risk of injury to the human eye.
為讓上述目的、技術特徵及優點能更明顯易懂，下文係以較佳之實施例配合所附圖式進行詳細說明。 The above objects, technical features and advantages will be more apparent from the following description.
1、1A、1B、1C、1D、1E‧‧‧發光裝置 1, 1A, 1B, 1C, 1D, 1E‧‧‧ illuminating devices
100‧‧‧LED晶片陣列 100‧‧‧LED chip array
10‧‧‧覆晶式LED晶片、LED晶片 10‧‧‧Flip-chip LED chip, LED chip
11‧‧‧上表面 11‧‧‧ upper surface
111‧‧‧邊緣 111‧‧‧ edge
12‧‧‧下表面 12‧‧‧ Lower surface
13‧‧‧立面 13‧‧‧Facade
14‧‧‧電極組 14‧‧‧Electrode group
200‧‧‧封裝構造 200‧‧‧Package construction
20‧‧‧緩衝結構、軟性緩衝結構 20‧‧‧buffer structure, soft buffer structure
21‧‧‧頂部 21‧‧‧ top
211‧‧‧凸狀曲面 211‧‧‧ convex surface
22‧‧‧側部 22‧‧‧ side
221‧‧‧外緣面 221‧‧‧ outer rim
23‧‧‧光散射性微粒 23‧‧‧Light scattering particles
30‧‧‧螢光結構 30‧‧‧Fluorescent structure
31‧‧‧頂部 31‧‧‧ top
32‧‧‧側部 32‧‧‧ side
321‧‧‧水平段 321‧‧‧ horizontal section
40‧‧‧透光結構 40‧‧‧Light transmission structure
41‧‧‧微結構透鏡層 41‧‧‧Microstructured lens layer
411‧‧‧微結構 411‧‧‧Microstructure
42‧‧‧光散射性微粒 42‧‧‧Light scattering particles
43‧‧‧光散射層 43‧‧‧Light scattering layer
300‧‧‧離型材料 300‧‧‧ release material
第1A圖至第1C圖係為依據本發明之第1較佳實施例之發光裝置的示意圖；第2圖係為依據本發明之第2較佳實施例之發光裝置的示意圖；第3A圖至第3C圖係為依據本發明之第3較佳實施例之發光裝置的示意圖；及第4A圖至第4F圖係依據本發明之較佳實施例之發光裝置之製造方法的各步驟之示意圖。 1A to 1C are schematic views of a light-emitting device according to a first preferred embodiment of the present invention; and FIG. 2 is a schematic view of a light-emitting device according to a second preferred embodiment of the present invention; 3C is a schematic view of a light-emitting device according to a third preferred embodiment of the present invention; and FIGS. 4A to 4F are schematic views showing steps of a method of manufacturing a light-emitting device according to a preferred embodiment of the present invention.
請參閱第1A圖所示，其為依據本發明之第1較佳實施例之發光裝置的示意圖(剖視圖)。該發光裝置1A可包含一LED晶片10、一緩衝結構20、一螢光結構30及一透光結構40，而緩衝結構20、螢光結構30及透光結構40又可構成一透光的封裝構造200；該些元件的技術內容將依序說明如下。 Please refer to FIG. 1A, which is a schematic view (cross-sectional view) of a light-emitting device according to a first preferred embodiment of the present invention. The illuminating device 1A can include an LED chip 10, a buffer structure 20, a fluorescent structure 30, and a light transmitting structure 40. The buffer structure 20, the fluorescent structure 30, and the light transmitting structure 40 can form a light transmissive package. Construction 200; the technical content of these components will be described as follows.
該LED晶片10為一覆晶式LED晶片，其包含一上表面11、一下表面12、一立面13及一電極組14。上表面11與下表面12為相對且相反地設置，而立面13形成於上表面11與下表面12之間、且連接上表面11與下表面12。換言之，立面13是沿著上表面11之邊緣111與下表面12之邊緣而形成，故立面13相對於上表面11與下表面12為環形(例如矩型環)。 The LED chip 10 is a flip chip type LED chip, which comprises an upper surface 11, a lower surface 12, a vertical surface 13 and an electrode group 14. The upper surface 11 and the lower surface 12 are disposed opposite and opposite, and the elevation 13 is formed between the upper surface 11 and the lower surface 12 and connects the upper surface 11 and the lower surface 12. In other words, the façade 13 is formed along the edge 111 of the upper surface 11 and the edge of the lower surface 12, so the façade 13 is annular (e.g., a rectangular ring) with respect to the upper surface 11 and the lower surface 12.
電極組14設置於下表面12上，且可具有二個以上之電極。電能(圖未示)可透過電極組14供應至LED晶片10內，以使LED晶片10發出光線。光線可從上表面11及立面13射出。由於LED晶片10為覆晶型式，故上表面11上未設有電極。 The electrode group 14 is disposed on the lower surface 12 and may have more than two electrodes. Electrical energy (not shown) may be supplied to the LED wafer 10 through the electrode group 14 to cause the LED wafer 10 to emit light. Light can be emitted from the upper surface 11 and the elevation surface 13. Since the LED chip 10 is of a flip chip type, no electrode is provided on the upper surface 11.
緩衝結構20用以緩衝各元件的熱膨脹係數不匹配所產生的內應力、改善LED晶片10與封裝構造200之介面附著性、且可幫助螢光結構30均勻地形成於其上以達到近似共形化分佈(approximately conformal coating)等。具體而言，緩衝結構20為一相對軟性材質，亦可稱為軟性緩衝結構20，其製造材料可為一透明之高分子材料(包含矽膠、環氧樹脂或橡膠等)，軟性緩衝結構20可包含一頂部21及一側部22(兩者為一體成型)，而頂部21形成且接觸於LED晶片10之上表面11上，側部22形成且接觸於LED晶片10之立面13；此外，軟性緩衝結構20可完整地覆蓋LED晶片10之上表面11及立面13，但未有覆蓋LED晶片10之電極組14。 The buffer structure 20 is used to buffer the internal stress generated by the thermal expansion coefficient mismatch of each component, improve the interface adhesion between the LED wafer 10 and the package structure 200, and can help the fluorescent structure 30 to be uniformly formed thereon to achieve approximate conformality. Approximately conformal coating, and the like. Specifically, the buffer structure 20 is a relatively soft material, which may also be referred to as a soft buffer structure 20, and the manufacturing material may be a transparent polymer material (including silicone rubber, epoxy resin or rubber, etc.), and the soft buffer structure 20 may be A top portion 21 and a side portion 22 (both integrally formed) are formed, and the top portion 21 is formed and contacts the upper surface 11 of the LED wafer 10, and the side portion 22 is formed and contacts the elevation surface 13 of the LED wafer 10; The soft buffer structure 20 can completely cover the upper surface 11 and the elevation 13 of the LED wafer 10, but does not cover the electrode group 14 of the LED wafer 10.
請配合參閱第1B圖(省略螢光結構及透光結構之發光裝置之剖視圖)，頂部21包括一凸狀曲面211(即頂部21的上表面)，且凸狀曲面211之最高點係靠近或對齊LED晶片10之上表面11之中心點，而凸狀曲面211之最低點係靠近或對齊上表面11之邊緣111；因緩衝結構20較佳地由高分子 材料組成，其受材料內聚力之作用後通常會形成一凸狀結構，使頂部21具有凸狀曲面211。較佳地，凸狀曲面211之最高點至上表面11的距離係小於LED晶片10之厚度之一半，換言之，凸狀曲面211可以不是一半球面。 Referring to FIG. 1B (a cross-sectional view of the illuminating device omitting the fluorescent structure and the light transmitting structure), the top portion 21 includes a convex curved surface 211 (ie, the upper surface of the top portion 21), and the highest point of the convex curved surface 211 is close to or Aligning the center point of the upper surface 11 of the LED wafer 10, and the lowest point of the convex curved surface 211 is close to or aligned with the edge 111 of the upper surface 11; since the buffer structure 20 is preferably made of a polymer The material composition, which is generally subjected to the cohesive force of the material, generally forms a convex structure such that the top portion 21 has a convex curved surface 211. Preferably, the distance from the highest point of the convex curved surface 211 to the upper surface 11 is less than one half of the thickness of the LED wafer 10, in other words, the convex curved surface 211 may not be a half sphere.
該側部22包含一連接該凸狀曲面211的外緣面221(即側部22之上表面)，而較佳地外緣面221與凸狀曲面211係連續地相連接；也就是，在兩者之交界線上，外緣面221的曲率與凸狀曲面211的曲率為實質相同。連續地連接的外緣面221與凸狀曲面211有益於後述的螢光結構30的形成。 The side portion 22 includes an outer edge surface 221 (ie, the upper surface of the side portion 22) connecting the convex curved surface 211, and preferably the outer edge surface 221 is continuously connected with the convex curved surface 211; that is, On the boundary line between the two, the curvature of the outer edge surface 221 is substantially the same as the curvature of the convex curved surface 211. The continuously connected outer peripheral surface 221 and convex curved surface 211 are advantageous for the formation of the fluorescent structure 30 to be described later.
外緣面221與凸狀曲面211可在LED晶片10之上表面11之邊緣111處相連接，故邊緣111相切或鄰近於凸狀曲面211及外緣面221；也就是，邊緣111與「外緣面221及凸狀曲面211之間的交界線」相平行地或接近平行地偏移，而較佳地此偏移量可在製程能力下為最小者。 The outer edge surface 221 and the convex curved surface 211 are connectable at the edge 111 of the upper surface 11 of the LED chip 10, so the edge 111 is tangent or adjacent to the convex curved surface 211 and the outer edge surface 221; that is, the edge 111 and the edge The boundary line between the outer edge surface 221 and the convex curved surface 211 is offset parallel or nearly parallel, and preferably the offset can be minimized under process capability.
外緣面221較佳地可包含一凹狀曲面(如圖所示)，換言之，外緣面221的曲率與凸狀曲面211曲率為相反。此外，外緣面221係越遠離LED晶片10之立面13時越接近水平(其曲率最終亦趨近於零)。此種外緣面221更有益於後述的螢光結構30的形成。另一實施例中(圖未示)，外緣面221可包含一傾斜平面或一凸狀曲面。 The outer peripheral surface 221 preferably includes a concave curved surface (as shown), in other words, the curvature of the outer peripheral surface 221 is opposite to the curvature of the convex curved surface 211. In addition, the closer the outer edge surface 221 is to the elevation 13 of the LED chip 10, the closer it is to the horizontal (the curvature eventually approaches zero). Such an outer peripheral surface 221 is more advantageous for the formation of the fluorescent structure 30 to be described later. In another embodiment (not shown), the outer edge surface 221 may include an inclined plane or a convex curved surface.
較佳地，形成該緩衝結構20的方法可為：將一高分子材料，例如矽膠，噴灑(spray)至LED晶片10上，以使得高分子材料附著在LED晶片10之上表面11及立面13。藉由高分子材料本身的表面張力及內聚力，於高分子材料固化後可形成具有頂部21及側部22之軟性緩衝結構20。 Preferably, the method for forming the buffer structure 20 may be: spraying a polymer material, such as silicone, onto the LED wafer 10 so that the polymer material adheres to the upper surface 11 and the surface of the LED wafer 10. 13. The soft buffer structure 20 having the top portion 21 and the side portions 22 can be formed after the polymer material is cured by the surface tension and cohesive force of the polymer material itself.
軟性緩衝結構20具有較小的硬度，以能減緩各元件之間因熱膨脹係數不匹配所產生的內應力之影響，因而減緩內應力所造成的剝離 (delamination)現象。而當軟性緩衝結構20的硬度過大時，會降低其減緩內應力之效果，故硬度較佳地不大於A80之蕭氏硬度(Shore Hardness)。軟性緩衝結構20的硬度主要由軟性緩衝結構20的製造材料來決定，故依據所需之硬度來選擇適合的製造材料。舉例而言，軟性緩衝結構20的製造材料可為一透明之高分子材料(包含矽膠、環氧樹脂或橡膠等)，然後從不同種類的高分子材料來選擇一硬度合乎要求者。 The soft buffer structure 20 has a small hardness to slow down the influence of internal stress caused by the mismatch of thermal expansion coefficients between the components, thereby slowing the peeling caused by the internal stress. (delamination) phenomenon. When the hardness of the soft buffer structure 20 is too large, the effect of slowing down the internal stress is lowered, so the hardness is preferably not more than the Shore Hardness of A80. The hardness of the soft cushioning structure 20 is mainly determined by the material of the soft cushioning structure 20, so that a suitable manufacturing material is selected in accordance with the required hardness. For example, the material of the soft buffer structure 20 can be a transparent polymer material (including silicone, epoxy or rubber), and then a hardness is selected from different types of polymer materials.
螢光結構30可改變「從LED晶片10所發出、然後通過軟性緩衝結構20的光線」之波長。具體而言，螢光結構30係沿著軟性緩衝結構20之凸狀曲面211及外緣面221、形成於軟性緩衝結構20上。 The phosphor structure 30 can change the wavelength of "light emitted from the LED chip 10 and then passing through the soft buffer structure 20". Specifically, the fluorescent structure 30 is formed on the flexible buffer structure 20 along the convex curved surface 211 and the outer edge surface 221 of the flexible buffer structure 20 .
請配合參閱第1C圖(省略透光結構之發光裝置之剖視圖)，螢光結構30也可視為包含一頂部31及一側部32，頂部31形成於軟性緩衝結構20之頂部21上，而側部32形成於軟性緩衝結構20之側部22上。此外，由於頂部21之凸狀曲面211及側部22之外緣面221可為連續地連接，螢光結構30之頂部31及側部32亦可較連續、平順地相連接。 Referring to FIG. 1C (a cross-sectional view of the light-emitting device with the light-transmitting structure omitted), the fluorescent structure 30 can also be regarded as including a top portion 31 and a side portion 32 formed on the top portion 21 of the flexible buffer structure 20, and the side portion The portion 32 is formed on the side portion 22 of the flexible cushioning structure 20. In addition, since the convex curved surface 211 of the top portion 21 and the outer peripheral surface 221 of the side portion 22 can be continuously connected, the top portion 31 and the side portion 32 of the fluorescent structure 30 can also be connected continuously and smoothly.
由於外緣面221為一相對平緩曲面，可使LED晶片10之立面13所造成之斷差(step)較為平緩(smooth)，因此，在採用噴塗等類似方法來形成螢光結構30時，緩衝結構20可大幅減緩因重力的作用所導致的螢光材料沉澱之現象，使螢光材料可連續分佈於緩衝結構20的頂面211與外緣面221，產生近似共形化分佈(approximately conformal coating)之螢光結構30；換言之，螢光結構30可為薄膜狀結構，係基本上共形於(substantially conform to)軟性緩衝結構20之外型，而近似共形於LED晶片10之外型，由此形成的連續螢光結構30可解決CSP發光裝置1A藍光洩漏之問題。 Since the outer edge surface 221 is a relatively gentle curved surface, the step caused by the elevation 13 of the LED chip 10 can be smoothed. Therefore, when the fluorescent structure 30 is formed by spraying or the like. The buffer structure 20 can greatly alleviate the phenomenon of precipitation of the fluorescent material caused by the action of gravity, so that the fluorescent material can be continuously distributed on the top surface 211 and the outer edge surface 221 of the buffer structure 20, resulting in an approximately conformal distribution (approximately conformal distribution). The phosphor structure 30; in other words, the phosphor structure 30 can be a film-like structure that is substantially conformally conformed to the soft buffer structure 20 and is approximately conformal to the shape of the LED wafer 10. The continuous fluorescent structure 30 thus formed can solve the problem of blue light leakage of the CSP light-emitting device 1A.
螢光結構30係包含螢光材料、及固定螢光材料的黏合材料(例如可透光的高分子材料)。螢光結構30可藉由如申請人先前提出的公開號US2010/0119839之美國專利申請案(對應於證書號I508331之臺灣專利)所揭露的方法來形成，該美國及臺灣專利申請案的技術內容以引用方式全文併入本文；該方法可分別地沉積螢光材料與高分子材料，在適當的參數控制下可大幅降低螢光材料聚集(particle aggregation)的現象，使得螢光結構30的螢光材料在分佈上具有良好的均勻性，可避免因分佈不連續所產生的空孔而造成藍光的洩漏(即光斑現象)，也因此降低了藍光對人眼傷害的風險；同時，亦可形成高螢光材料堆疊密度的螢光結構30，高堆疊密度且分佈均勻的螢光結構30可具有較佳的光轉換效率。此外，上述方法可重複該些製程一層一層地形成所需的堆疊順序，例如不同螢光材料的堆疊順序、或不同折射係數之高分子材料的堆疊順序，如此可使螢光結構30進一步獲得更佳的光汲取效率或光轉換效率。 The fluorescent structure 30 includes a fluorescent material and an adhesive material (for example, a light-transmittable polymer material) that fixes the fluorescent material. The fluorescent structure 30 can be formed by the method disclosed in the U.S. Patent Application Publication No. US 2010/0119839 (the Taiwan Patent No. I508331), which is hereby incorporated by reference. The method is fully incorporated herein by reference; the method can separately deposit a fluorescent material and a polymer material, and can greatly reduce the phenomenon of particle aggregation of the fluorescent material under the control of appropriate parameters, so that the fluorescent structure 30 is fluorescent. The material has good uniformity in distribution, which can avoid blue light leakage (ie, spot phenomenon) due to voids generated by discontinuous distribution, thereby reducing the risk of blue light damage to human eyes. At the same time, high fluorescence can be formed. The phosphor structure 30 of material stack density, the high stack density and uniform distribution of the phosphor structure 30 can have better light conversion efficiency. In addition, the above method can repeat the processes to form a desired stacking sequence layer by layer, for example, a stacking order of different phosphor materials, or a stacking order of polymer materials having different refractive indices, so that the phosphor structure 30 can be further obtained. Good light extraction efficiency or light conversion efficiency.
由於本發明之螢光結構30是由螢光材料與高分子材料所形成(現有CSP發光裝置之螢光結構亦是)，若螢光結構30直接接觸並形成於LED晶片10上時，部分螢光材料(通常為一陶瓷材料，其與LED晶片10間無黏著性)將減低高分子材料與LED晶片10的接觸面積，因而降低了螢光結構30與LED晶片10介面之附著力；在螢光結構30與LED晶片10之間設置了緩衝結構20後，可使緩衝結構20本身之高分子材料完全與LED晶片10接觸，因而明顯提升了螢光結構30與LED晶片10之間的結合力量(bonding force)。 Since the fluorescent structure 30 of the present invention is formed of a fluorescent material and a polymer material (the fluorescent structure of the conventional CSP light-emitting device is also), if the fluorescent structure 30 is directly in contact with and formed on the LED wafer 10, part of the fluorescent material The optical material (usually a ceramic material that is non-adhesive with the LED wafer 10) will reduce the contact area of the polymer material with the LED wafer 10, thereby reducing the adhesion of the phosphor structure 30 to the LED wafer 10 interface; After the buffer structure 20 is disposed between the optical structure 30 and the LED chip 10, the polymer material of the buffer structure 20 itself can be completely contacted with the LED chip 10, thereby significantly enhancing the bonding strength between the fluorescent structure 30 and the LED wafer 10. (bonding force).
請復參閱第1A圖，透光結構40用以保護螢光結構30，使得環境中的物質不易影響到螢光結構30。因此，透光結構40係形成於螢光結 構30上，以覆蓋螢光結構30。透光結構40之厚度可較大，且透光結構40可不用共形於螢光結構30、軟性緩衝結構20的外型而形成；透光結構40之上表面還可為平面者，以利於機械手臂等裝置來抓取。 Referring to FIG. 1A, the light transmissive structure 40 is used to protect the fluorescent structure 30 so that substances in the environment do not easily affect the fluorescent structure 30. Therefore, the light transmitting structure 40 is formed on the fluorescent junction The structure 30 is disposed to cover the fluorescent structure 30. The thickness of the light-transmitting structure 40 can be large, and the light-transmitting structure 40 can be formed without conforming to the shape of the fluorescent structure 30 and the soft buffer structure 20; the upper surface of the light-transmitting structure 40 can also be a flat surface, so as to facilitate A device such as a robot arm is used to grasp.
透光結構40的硬度不小於軟性緩衝結構20的硬度，且較佳地，透光結構40會硬於軟性緩衝結構20，以使得透光結構40具有較佳的剛性，進而提供生產上足夠的可操作性。透光結構40的硬度較佳地不小於D30之蕭氏硬度。 The hardness of the light transmitting structure 40 is not less than the hardness of the soft buffer structure 20, and preferably, the light transmitting structure 40 is harder than the soft buffer structure 20, so that the light transmitting structure 40 has better rigidity, thereby providing sufficient production. Operability. The hardness of the light transmitting structure 40 is preferably not less than the Shore hardness of D30.
透光結構40的硬度主要由透光結構40的製造材料來決定，故依據所需之硬度來選擇適合的製造材料。舉例而言，透光結構40的製造材料可為一高分子材料(包含矽膠、環氧樹脂或橡膠等)，然後從不同種類的高分子材料來選擇一硬度合乎要求者。 The hardness of the light transmissive structure 40 is mainly determined by the material of the light transmissive structure 40, so that a suitable manufacturing material is selected depending on the required hardness. For example, the material for manufacturing the light transmissive structure 40 may be a polymer material (including silicone rubber, epoxy resin, rubber, etc.), and then a hardness is selected from different types of polymer materials.
綜合上述，發光裝置1A至少可提供以下技術特點： In summary, the illuminating device 1A can provide at least the following technical features:
1、相比於螢光結構30(及現有CSP發光裝置之螢光結構)直接地接觸LED晶片10，部分螢光材料(通常為一陶瓷材料，其與LED晶片10之間無黏著性)減低了樹脂材料與LED晶片10的接觸面積，因而降低了螢光結構30與LED晶片10介面之附著力，緩衝結構20可使其本身之樹脂材料完全與LED晶片10接觸，因此透過緩衝結構20可明顯提升螢光結構30與LED晶片10之間的結合力量。又，由於軟性緩衝結構20的硬度較低，可減緩因各元件之間熱膨脹係數不匹配所產生的內應力。如此，發光裝置1A運作時的溫度變化雖會產生內應力，但在緩衝結構20提升結合力量與減緩內應力之下，該內應力不易使封裝構造200從LED晶片10上分離；換言之，發光裝置1A運作時，不易有剝離(delamination)現象產生，顯著地增加了可 靠度性能。 1. Direct contact with the LED wafer 10 compared to the phosphor structure 30 (and the phosphor structure of the existing CSP illumination device), a portion of the phosphor material (usually a ceramic material that has no adhesion to the LED wafer 10) is reduced. The contact area of the resin material with the LED chip 10 is reduced, thereby reducing the adhesion between the phosphor structure 30 and the interface of the LED chip 10. The buffer structure 20 can completely contact the LED material 10 with the resin material, so that the buffer structure 20 can be transmitted through the buffer structure 20 The bonding strength between the fluorescent structure 30 and the LED wafer 10 is significantly improved. Moreover, since the hardness of the soft buffer structure 20 is low, internal stress due to mismatch in thermal expansion coefficients between the elements can be alleviated. As such, although the temperature change during operation of the light-emitting device 1A generates internal stress, the internal stress is less likely to separate the package structure 200 from the LED wafer 10 under the buffer structure 20 to increase the bonding force and slow down the internal stress; in other words, the light-emitting device When 1A is operated, it is not easy to have delamination, which significantly increases the Reliability performance.
2、由於軟性緩衝結構20的側部22的外緣面221為相對平緩曲面，可使LED晶片10的立面13所造成之斷差(step)較為平緩(smooth)，在採用噴塗等類似方法形成螢光結構30時，相較於直接噴塗在LED晶片10之垂直立面13上而使螢光材料因重力的作用導致螢光材料在高分子材料中沉澱，造成不易均勻附著在LED晶片10的垂直立面13而無法形成連續且共形化分佈(conformal coating)之螢光材料；發光裝置1A之緩衝結構20可大幅減緩因重力的作用所導致的螢光材料沉澱之現象，因此可在緩衝材料20側部22上形成連續分佈的螢光材料，產生近似共形化分佈(approximately conformal coating)之螢光結構30，即螢光結構30可均勻地於形成在外緣面221上。因此，無論是在頂部21或側部22上，螢光結構30都可具有均勻的螢光材料分佈及均勻的厚度。如此，發光裝置1A可避免於LED晶片10側部因螢光材料不連續所產生的空孔而造成藍光洩漏，降低了對人眼產生傷害的風險，也因此發光裝置1A亦具有良好的空間色均勻性，並提升了色溫分級集中度與其發光效率。 2. Since the outer edge surface 221 of the side portion 22 of the soft buffer structure 20 is a relatively gentle curved surface, the step caused by the elevation 13 of the LED chip 10 can be made smooth, in a similar manner by spraying or the like. When the fluorescent structure 30 is formed, the fluorescent material is precipitated in the polymer material due to the action of gravity due to the direct spraying on the vertical façade 13 of the LED wafer 10, resulting in difficulty in uniformly adhering to the LED wafer 10 The vertical façade 13 cannot form a continuous and conformal coating fluorescent material; the buffer structure 20 of the illuminating device 1A can greatly alleviate the precipitation of the fluorescent material caused by the action of gravity, so A continuously distributed phosphor material is formed on the side portion 22 of the cushioning material 20 to produce a approximately conformal coating of the phosphor structure 30, that is, the phosphor structure 30 can be uniformly formed on the outer peripheral surface 221. Thus, whether on the top 21 or side 22, the phosphor structure 30 can have a uniform distribution of phosphor material and a uniform thickness. In this way, the light-emitting device 1A can avoid blue light leakage due to the holes generated by the discontinuous phosphor material in the side of the LED chip 10, thereby reducing the risk of injury to the human eye, and thus the light-emitting device 1A also has a good spatial color. Uniformity, and improved color temperature grading concentration and its luminous efficiency.
3、在形成發光裝置1A之螢光結構30時，可採用分別沉積螢光材料與高分子材料的方法，因此可大幅減少螢光材料聚集的現象，使得在形成較薄的螢光結構30時仍可獲得分佈均勻的螢光材料，避免了空孔的產生，因此不會產生光斑現象，同時亦可形成高密度堆疊的螢光結構30。由於改善了光斑現象與藍光之洩漏，並且具有高密度堆疊的螢光結構，因此本發明的發光裝置具有較佳的螢光結構之光轉換效率，故提升了整體發光效率，同時亦降低了藍光對人眼傷害的風險。 3. When the fluorescent structure 30 of the light-emitting device 1A is formed, a method of separately depositing a fluorescent material and a polymer material can be employed, so that the phenomenon of aggregation of the fluorescent material can be greatly reduced, so that when the thin fluorescent structure 30 is formed, A uniformly distributed fluorescent material can still be obtained, thereby avoiding the generation of voids, so that no flare phenomenon occurs, and a high-density stacked fluorescent structure 30 can be formed. The light-emitting device of the present invention has better light conversion efficiency of the fluorescent structure due to improved spot phenomenon and blue light leakage, and has a high-density stacked fluorescent structure, thereby improving overall luminous efficiency and reducing blue light. The risk of injury to the human eye.
4、透光結構40的折射係數可選擇小於螢光結構30的折射係數，其又可選擇小於軟性緩衝結構20的折射係數；換言之，封裝構造200可落實折射係數之匹配，係封裝構造200之折射係數越遠離LED晶片10時越接近外界(空氣)之折射係數，可減少在光路徑上因為折射係數的差異而在材料介面上之全反射。如此，可提升發光裝置1A的光汲取效率。 4, the refractive index of the light transmissive structure 40 can be selected to be smaller than the refractive index of the fluorescent structure 30, which in turn can be selected to be smaller than the refractive index of the soft buffer structure 20; in other words, the package structure 200 can implement the matching of the refractive index, is the package structure 200 The closer the refractive index is to the refractive index of the outside (air) as it is away from the LED wafer 10, the total reflection on the material interface due to the difference in refractive index in the light path can be reduced. In this way, the light extraction efficiency of the light-emitting device 1A can be improved.
5、透光結構40可不包含螢光材料於其內，故透光結構40的尺寸誤差不會影響到光線之波長轉換的一致性；換言之，最終形成透光結構40(或發光裝置1A)外形尺寸之製程(例如切割、模造成型…等)具有一定的加工公差，發光裝置1A的空間色均勻性與色溫分級集中度幾乎不會因為受到該些加工公差的影響而降低。 5. The light transmitting structure 40 may not include the fluorescent material therein, so the dimensional error of the light transmitting structure 40 does not affect the consistency of the wavelength conversion of the light; in other words, the shape of the light transmitting structure 40 (or the light emitting device 1A) is finally formed. The process of the size (for example, cutting, molding, etc.) has a certain processing tolerance, and the spatial color uniformity and the color temperature grading concentration of the light-emitting device 1A are hardly reduced by the influence of the machining tolerances.
6、軟性緩衝結構20、螢光結構30及透光結構40所構成的封裝構造200在長度及寬度上僅略大於LED晶片10，且LED晶片10下方不需要設置一副載具(submount，圖未示)，故發光裝置1A可作為小尺寸的晶片級封裝之發光裝置。另外，依據應用需求，封裝構造200之側面(全部或部分)上可選擇地設置一反射結構，以進一步控制發光裝置1A的發光角度。 6. The package structure 200 composed of the soft buffer structure 20, the fluorescent structure 30 and the light transmitting structure 40 is only slightly larger than the LED chip 10 in length and width, and no sub-carrier (submount) is required under the LED wafer 10. Not shown), the light-emitting device 1A can be used as a light-emitting device of a small-sized wafer-level package. In addition, depending on the application requirements, a reflective structure may be optionally disposed on the side (all or part) of the package structure 200 to further control the illumination angle of the light-emitting device 1A.
以上是發光裝置1A的技術內容的說明，接著說明依據本發明其他實施例的發光裝置的技術內容，而各實施例的發光裝置的技術內容應可互相參考，故相同的部分將省略或簡化。 The above is a description of the technical contents of the light-emitting device 1A. Next, the technical contents of the light-emitting device according to other embodiments of the present invention will be described. However, the technical contents of the light-emitting devices of the respective embodiments should be referred to each other, and the same portions will be omitted or simplified.
請參閱第2圖所示，其為依據本發明之第2較佳實施例之發光裝置的示意圖。第2實施例之發光裝置1B與前述發光裝置1A不同處至少在於，發光裝置1B之透光結構40更包含一微結構透鏡層41，其為透光結構40的一部分，且可與透光結構40的其他部分一體成型。微結構透鏡層41可包 含規則或任意排列的複數個微結構411，且該等微結構411可為半球狀、角錐狀、柱狀、圓錐狀等形狀、或是為粗糙表面。 Referring to Fig. 2, there is shown a schematic view of a light-emitting device according to a second preferred embodiment of the present invention. The light-emitting device 1B of the second embodiment differs from the light-emitting device 1A in that at least the light-transmitting structure 40 of the light-emitting device 1B further includes a microstructured lens layer 41 which is a part of the light-transmitting structure 40 and can be combined with the light-transmitting structure. The other parts of the 40 are integrally formed. Microstructured lens layer 41 can be packaged The plurality of microstructures 411 are arranged in a regular or arbitrarily arranged manner, and the microstructures 411 may be in the shape of a hemisphere, a pyramid, a column, a cone or the like, or may be a rough surface.
藉此，微結構透鏡層41可使光線不易反射回透光結構40中，幫助光線離開透光結構40，可增加光汲取效率，進而提升發光裝置1B的發光效率。 Thereby, the microstructure lens layer 41 can prevent the light from being reflected back into the light transmitting structure 40, and helps the light to leave the light transmitting structure 40, thereby increasing the light extraction efficiency and further improving the luminous efficiency of the light emitting device 1B.
請參閱第3A圖至第3C圖所示，其為依據本發明之第3較佳實施例之發光裝置的示意圖。第3實施例之發光裝置1C與前述發光裝置1A不同處至少在於，發光裝置1C之軟性緩衝結構20可包含一光散射性微粒23(如第3A圖所示)，而透光結構40亦可包含一光散射性微粒42(如第3B圖及第3C圖所示)。軟性緩衝結構20及透光結構40亦可同時包含各自的光散射性微粒(圖未示)。 Please refer to FIGS. 3A to 3C, which are schematic views of a light-emitting device according to a third preferred embodiment of the present invention. The light-emitting device 1C of the third embodiment differs from the light-emitting device 1A in that at least the soft buffer structure 20 of the light-emitting device 1C can include a light-scattering particle 23 (as shown in FIG. 3A), and the light-transmitting structure 40 can also A light-scattering particle 42 is included (as shown in Figures 3B and 3C). The soft buffer structure 20 and the light transmissive structure 40 may also include respective light-scattering particles (not shown).
該光散射性微粒23及42可使光線散射，進而提升發光裝置1C之空間色均勻性等；光散射性微粒23及42可為二氧化鈦(TiO2)、氮化硼(BN)、二氧化矽(SiO2)或三氧化二鋁(Al2O3)等。此外，光散射性微粒23可均勻地分佈於軟性緩衝結構20中，而光散射性微粒42可均勻地分佈於透光結構40中(如第3B圖所示)。另外如第3C圖所示，光散射性微粒42亦可集中地分佈於透光結構40的某一部分，以構成一光散射層43；換言之，透光結構40可包含一光散射層43，而光散射層43可覆蓋螢光結構30並包含該光散射性微粒42。 The light-scattering fine particles 23 and 42 can scatter light, thereby improving the spatial color uniformity of the light-emitting device 1C, etc. The light-scattering fine particles 23 and 42 can be titanium oxide (TiO 2 ), boron nitride (BN), or cerium oxide. (SiO 2 ) or aluminum oxide (Al 2 O 3 ) or the like. Further, the light-scattering fine particles 23 may be uniformly distributed in the soft buffer structure 20, and the light-scattering fine particles 42 may be uniformly distributed in the light-transmitting structure 40 (as shown in FIG. 3B). In addition, as shown in FIG. 3C, the light-scattering particles 42 may be collectively distributed in a certain portion of the light-transmitting structure 40 to constitute a light-scattering layer 43; in other words, the light-transmitting structure 40 may include a light-scattering layer 43. The light scattering layer 43 may cover the fluorescent structure 30 and include the light-scattering particles 42.
上述各實施例之發光裝置1A至1C中，軟性緩衝結構20、螢光結構30及/或透光結構40可為一單層或多層結構。若為單層結構時，其由製造材料經一次固化而形成者，故各部分為一體成型；若為多層結構時， 其由製造材料分次固化而形成者，故各部分非一體成型。 In the light-emitting devices 1A to 1C of the above embodiments, the soft buffer structure 20, the fluorescent structure 30, and/or the light-transmitting structure 40 may be a single layer or a multilayer structure. In the case of a single-layer structure, which is formed by curing the material once, the parts are integrally formed; if it is a multi-layer structure, It is formed by successively curing the manufactured material, so that each part is not integrally formed.
接著將說明依據本發明的發光裝置的製造方法，該製造方法可製造出相同或類似於上述實施例的發光裝置1A至1C，故製造方法的技術內容與發光裝置1A至1C的技術內容可相互參考。 Next, a description will be given of a method of manufacturing a light-emitting device according to the present invention, which can manufacture the light-emitting devices 1A to 1C which are the same or similar to the above-described embodiments, so that the technical contents of the manufacturing method and the technical contents of the light-emitting devices 1A to 1C can mutually reference.
請參閱第4A圖至第4F圖所示，其為依據本發明之第4較佳實施例之發光裝置之製造方法的各步驟之示意圖。該製造方法至少包含三步驟：放置複數個LED晶片10於一離型材料300上；形成複數個封裝構造200於該等LED晶片10上；以及切割該等封裝構造200。以下將配合各圖式來進一步說明各階段之技術內容。 Please refer to FIGS. 4A to 4F, which are schematic diagrams showing the steps of a method of manufacturing a light-emitting device according to a fourth preferred embodiment of the present invention. The method of fabrication includes at least three steps: placing a plurality of LED wafers 10 on a release material 300; forming a plurality of package structures 200 on the LED wafers 10; and cutting the package structures 200. The technical content of each stage will be further explained below in conjunction with the various drawings.
如第4A圖所示，首先準備一離型材料(例如離型膜)300，而該離型材料300還可放置於一支撐結構(例如矽基板或玻璃基板，圖未示)上；接者，將複數LED晶片10(圖式係以兩個LED晶片10為例示)放置在離型材料300上，以形成一LED晶片陣列100。較佳地，各LED晶片10之電極組14可陷入至離型材料300中，使LED晶片10之下表面12被離型材料300遮蔽。 As shown in FIG. 4A, a release material (for example, a release film) 300 is first prepared, and the release material 300 can also be placed on a support structure (for example, a ruthenium substrate or a glass substrate, not shown); A plurality of LED wafers 10 (illustrated by taking two LED wafers 10 as an example) are placed on the release material 300 to form an LED wafer array 100. Preferably, the electrode set 14 of each LED wafer 10 can be trapped into the release material 300 such that the lower surface 12 of the LED wafer 10 is shielded by the release material 300.
如第4B圖至第4D圖所示，在該等LED晶片10放置好後，接著形成複數個封裝構造200於該等LED晶片10上，而該等封裝構造200彼此相連。而形成封裝構造200於LED晶片10的過程中，可包含三個次步驟：首先，如第4B圖所示，形成複數個軟性緩衝結構20於該等LED晶片10上。也就是，將該等軟性緩衝結構20的一製造材料噴灑(spray)至該等LED晶片10上，以使得製造材料附著在LED晶片10之上表面11及立面13(離型材料300上亦會附著有製造材料)。藉由製造材料本身的表面張力及內聚力，製造材料固化後可形成例如第1實施例所述的軟性緩衝結構20 (具有頂部21及側部22)。此外，所形成的軟性緩衝結構20的最高點會自然地對準LED晶片10的上表面11的中心點。 As shown in FIGS. 4B-4D, after the LED wafers 10 are placed, a plurality of package structures 200 are then formed on the LED wafers 10, and the package structures 200 are connected to each other. The process of forming the package structure 200 in the LED wafer 10 may include three sub-steps: First, as shown in FIG. 4B, a plurality of soft buffer structures 20 are formed on the LED chips 10. That is, a manufacturing material of the soft buffer structures 20 is sprayed onto the LED wafers 10 such that the manufacturing material adheres to the upper surface 11 and the façade 13 of the LED wafer 10 (the release material 300 is also Will be attached to the manufacturing material). By manufacturing the surface tension and cohesive force of the material itself, the soft buffer structure 20 as described in the first embodiment can be formed after the material is cured. (With top 21 and side 22). Furthermore, the highest point of the formed soft buffer structure 20 will naturally align with the center point of the upper surface 11 of the LED wafer 10.
除了藉由噴灑外，亦可藉由旋轉塗佈(spin coating)等適合方式將軟性緩衝結構20的製造材料附著至LED晶片10上。此外，亦可在製造材料中混入光散射性微粒23(如第3A圖所示)，使得所形成的軟性緩衝結構20包含光散射性微粒23。 In addition to spraying, the manufacturing material of the soft buffer structure 20 may be attached to the LED wafer 10 by a suitable method such as spin coating. Further, light-scattering fine particles 23 (as shown in FIG. 3A) may be mixed in the production material so that the formed soft buffer structure 20 contains the light-scattering fine particles 23.
接著，如第4C圖所示，沿著該等軟性緩衝結構20的該等凸狀曲面211及該等外緣面221，形成複數個螢光結構30於該等軟性緩衝結構20上。螢光結構30的形成例如可藉由申請人先前提出的公開號US2010/0119839之美國專利申請案(對應於證書號1508331之臺灣專利)所揭露的方法，即：先將該等LED晶片10及該等軟性緩衝結構20放置於一製程腔室(圖未示)中，然後將一螢光材料及一高分子材料分別地沈積至該等軟性緩衝結構20上。可以先沈積一層密集及均勻分佈的螢光材料後，再沈積一層高分子材料作為黏合材料(binder)，以固定螢光材料；反之亦可。此外，在沈積螢光材料時，製程腔室內可為真空狀態，以更好地沈積螢光材料。 Next, as shown in FIG. 4C, a plurality of fluorescent structures 30 are formed on the soft buffer structures 20 along the convex curved surfaces 211 and the outer peripheral surfaces 221 of the soft buffer structures 20. The formation of the fluorescent structure 30 can be achieved, for example, by the method disclosed in the U.S. Patent Application Serial No. US 2010/0119839 (the Taiwan Patent No. 1508331). The soft buffer structures 20 are placed in a process chamber (not shown), and a phosphor material and a polymer material are separately deposited onto the soft buffer structures 20. A dense and evenly distributed phosphor material may be deposited first, and then a layer of polymer material is deposited as a binder to fix the phosphor material; vice versa. In addition, when depositing the phosphor material, the process chamber can be in a vacuum state to better deposit the phosphor material.
此外，以上述方法(或噴塗等方法)形成螢光結構30時，雖然在「放置複數個LED晶片10於離型材料300上以形成一LED晶片陣列100」的步驟中難以避免會產生放置位置的誤差，但各螢光結構30仍可均勻地且對稱地形成於各LED晶片10上，並不會受到對位誤差的影響而減低了該些螢光結構30之均勻性與對稱性，此特性相當有益於穩定且大量地生產；相對地，若採用模造成型與印刷等方法製作螢光結構時，並不具備此優點， 對位誤差將強烈影響其均勻性與對稱性。 Further, when the fluorescent structure 30 is formed by the above method (or spraying method, etc.), it is difficult to avoid the placement position in the step of "putting a plurality of LED chips 10 on the release material 300 to form an LED wafer array 100". The error, but each of the phosphor structures 30 can be uniformly and symmetrically formed on each of the LED chips 10 without being affected by the alignment error, thereby reducing the uniformity and symmetry of the phosphor structures 30. The characteristics are quite beneficial for stable and large-scale production; relatively, if a fluorescent structure is produced by a method such as mold forming and printing, the advantage is not obtained. The alignment error will strongly affect its uniformity and symmetry.
下一步將如第4D圖所示，形成複數個透光結構40於該等螢光結構30上。在形成透光結構40時，可將透光結構40的製造材料噴灑至螢光結構30上，然後以加熱等方式使製造材料固化。除了藉由噴灑外，亦可藉由旋轉塗佈、模造成型或點膠等適合方式將透光結構40的製造材料附著至螢光結構30上。此外，亦可在製造材料中混入光散射性微粒42(如第3B圖所示)，使得所形成的透光結構40包含光散射性微粒42。 Next, as shown in FIG. 4D, a plurality of light transmissive structures 40 are formed on the phosphor structures 30. When the light transmitting structure 40 is formed, the material of the light transmitting structure 40 can be sprayed onto the fluorescent structure 30, and then the manufacturing material can be cured by heating or the like. In addition to spraying, the manufacturing material of the light transmissive structure 40 may be attached to the fluorescent structure 30 by a suitable method such as spin coating, molding, or dispensing. Further, light-scattering fine particles 42 (as shown in FIG. 3B) may be mixed in the manufacturing material such that the formed light-transmitting structure 40 contains the light-scattering fine particles 42.
若所形成的透光結構40欲包含微結構透鏡層41(如第2圖所示)時，可在透光結構40的形成的同時或之後，將微結構透鏡層41形成於透光結構40上。此外，藉由模造成型，可將微結構透鏡層41與透光結構40同步形成出。 If the formed light-transmitting structure 40 is to include the microstructured lens layer 41 (as shown in FIG. 2), the microstructured lens layer 41 may be formed on the light-transmitting structure 40 at the same time as or after the formation of the light-transmitting structure 40. on. In addition, the microstructured lens layer 41 can be formed in synchronization with the light transmitting structure 40 by molding.
藉此，該等封裝構造200形成並覆蓋該等LED晶片10，而該等封裝構造200為一體相連。然後，可如第4E圖所示，將離型材料300從LED晶片10及封裝構造200下方移除，並如第4F圖所示，切割相連的該等封裝構造200，以得到相互分離的複數個發光裝置1；亦可先切割封裝構造200後，再移除離型材料300。 Thereby, the package structures 200 are formed and cover the LED chips 10, and the package structures 200 are integrally connected. Then, as shown in FIG. 4E, the release material 300 can be removed from under the LED wafer 10 and the package structure 200, and as shown in FIG. 4F, the connected package structures 200 are cut to obtain a plurality of separate structures. The light-emitting device 1; after the package structure 200 is cut, the release material 300 is removed.
在切割相連的封裝構造200時，刀具(圖未示)較佳地可從軟性緩衝結構20的外緣面221的曲率/斜率較小處的上方向下切(也就是從遠離LED晶片10之立面13處向下切)。因此，刀具切斷處為螢光結構30的側部32的水平段321。如此，縱然切割位置有誤差，亦難以影響發光裝置1的空間色均勻性，原因在於：切割位置的誤差雖會導致發光裝置1的螢光結構30具有不對稱的水平段321，但LED晶片10所發出之光線很少會通過水平段 321，故水平段321的多寡對於空間色均勻性的影響很小。 When cutting the connected package structure 200, the tool (not shown) is preferably cut downward from the upper side of the curvature/slope of the outer edge surface 221 of the soft buffer structure 20 (i.e., from the stand away from the LED chip 10). Cut at face 13 down). Thus, the tool cut is at the horizontal section 321 of the side 32 of the fluorescent structure 30. Thus, even if there is an error in the cutting position, it is difficult to affect the spatial color uniformity of the light-emitting device 1 because the error in the cutting position causes the fluorescent structure 30 of the light-emitting device 1 to have an asymmetrical horizontal section 321 but the LED wafer 10 The emitted light rarely passes through the horizontal section Therefore, the amount of horizontal section 321 has little effect on spatial color uniformity.
綜合上述，發光裝置之製造方法可批次生產大量的發光裝置1，每個發光裝置1都可如前述實施例的發光裝置般具有良好的可靠度、空間色均勻性、色溫分級集中度、發光效率等，且可作為小尺寸的晶片級封裝之發光裝置。 In summary, the manufacturing method of the illuminating device can batch-produce a large number of illuminating devices 1, each of which can have good reliability, spatial color uniformity, color temperature grading concentration, and illuminating as in the illuminating device of the foregoing embodiment. Efficiency and the like, and can be used as a light-emitting device of a small-sized wafer-level package.
此外，發光裝置之製造方法可不需使用模具，因此製造方法可輕易地應用於各種尺寸的LED晶片10。也就是，該製造方法應用至不同尺寸的LED晶片10時，可不需準備一個已製作好的符合該尺寸的模具，故其尺寸適用性廣泛，可減少成本。 Further, the manufacturing method of the light-emitting device can be applied to the LED chips 10 of various sizes without using a mold. That is, when the manufacturing method is applied to the LED chips 10 of different sizes, it is not necessary to prepare a mold which has been manufactured to meet the size, so that the size is widely applicable and the cost can be reduced.
上述之實施例僅用來例舉本發明之實施態樣，以及闡釋本發明之技術特徵，並非用來限制本發明之保護範疇。任何熟悉此技術者可輕易完成之改變或均等性之安排均屬於本發明所主張之範圍，本發明之權利保護範圍應以申請專利範圍為準。 The embodiments described above are only intended to illustrate the embodiments of the present invention, and to explain the technical features of the present invention, and are not intended to limit the scope of protection of the present invention. Any changes or equivalents that can be easily made by those skilled in the art are within the scope of the invention. The scope of the invention should be determined by the scope of the claims.
1A‧‧‧發光裝置 1A‧‧‧Lighting device
10‧‧‧覆晶式LED晶片、LED晶片 10‧‧‧Flip-chip LED chip, LED chip
11‧‧‧上表面 11‧‧‧ upper surface
111‧‧‧邊緣 111‧‧‧ edge
12‧‧‧下表面 12‧‧‧ Lower surface
13‧‧‧立面 13‧‧‧Facade
14‧‧‧電極組 14‧‧‧Electrode group
200‧‧‧封裝構造 200‧‧‧Package construction
20‧‧‧緩衝結構、軟性緩衝結構 20‧‧‧buffer structure, soft buffer structure
21‧‧‧頂部 21‧‧‧ top
211‧‧‧凸狀曲面 211‧‧‧ convex surface
22‧‧‧側部 22‧‧‧ side
221‧‧‧外緣面 221‧‧‧ outer rim
30‧‧‧螢光結構 30‧‧‧Fluorescent structure
31‧‧‧頂部 31‧‧‧ top
32‧‧‧側部 32‧‧‧ side
40‧‧‧透光結構 40‧‧‧Light transmission structure
Claims (15)
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| Application Number | Priority Date | Filing Date | Title |
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| TW104144441A TWI581465B (en) | 2015-12-30 | 2015-12-30 | Chip scale packaging light emitting device and manufacturing method of the same |
| US15/389,417 US10693046B2 (en) | 2015-12-30 | 2016-12-22 | Chip scale packaging light emitting device and manufacturing method of the same |
| EP16206749.0A EP3188261B1 (en) | 2015-12-30 | 2016-12-23 | Chip scale packaging light emitting device and manufacturing method of the same |
| JP2016257288A JP6596410B2 (en) | 2015-12-30 | 2016-12-29 | Chip scale package light emitting device and manufacturing method thereof |
| KR1020160183990A KR102091534B1 (en) | 2015-12-30 | 2016-12-30 | Chip scale packaging light emitting device and manufacturing method of the same |
| KR1020190023328A KR20190031450A (en) | 2015-12-30 | 2019-02-27 | Chip scale packaging light emitting device and manufacturing method of the same |
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| TW104144441A TWI581465B (en) | 2015-12-30 | 2015-12-30 | Chip scale packaging light emitting device and manufacturing method of the same |
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| CN109578843A (en) * | 2018-11-21 | 2019-04-05 | 中山市木林森电子有限公司 | A kind of Novel LED light bar manufacture craft |
| DE112020007507T5 (en) | 2020-10-15 | 2023-07-06 | Quanzhou Sanan Semiconductor Technology Co., Ltd. | Light Emitting Device |
| CN117497667B (en) * | 2023-12-29 | 2024-03-19 | 江西省兆驰光电有限公司 | Luminous LED packaging method and luminous LED packaging structure |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080099771A1 (en) * | 2006-10-31 | 2008-05-01 | Charng-Shyang Jong | Light emitting diode and wafer level package method, wafer level bonding method thereof, and circuit structure for wafer level package |
| TW201119090A (en) * | 2009-11-20 | 2011-06-01 | Everlight Electronics Co Ltd | Light emitting diode package and manufacturing method thereof |
| TW201143163A (en) * | 2010-05-20 | 2011-12-01 | Advanced Optoelectronic Tech | LED package |
| TW201327940A (en) * | 2011-12-30 | 2013-07-01 | Advanced Optoelectronic Tech | LED package |
| TW201344979A (en) * | 2012-04-27 | 2013-11-01 | Delta Electronics Inc | Light emitting device and manufacturing method thereof |
| US20140361318A1 (en) * | 2005-02-18 | 2014-12-11 | Nichia Corporation | Light emitting device provided with lens for controlling light distribution characteristic |
| TW201511370A (en) * | 2013-09-03 | 2015-03-16 | Delta Electronics Inc | Light emitting diode device |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003031848A (en) * | 2001-07-13 | 2003-01-31 | Seiwa Electric Mfg Co Ltd | Solid-state light emitting lamp and its manufacturing method |
| US9142740B2 (en) * | 2003-07-04 | 2015-09-22 | Epistar Corporation | Optoelectronic element and manufacturing method thereof |
| JP2006140362A (en) * | 2004-11-15 | 2006-06-01 | Nitto Denko Corp | Optical semiconductor device sealing sheet and optical semiconductor device manufacturing method using the same |
| US7344902B2 (en) * | 2004-11-15 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Overmolded lens over LED die |
| JP5262054B2 (en) * | 2007-10-10 | 2013-08-14 | 日亜化学工業株式会社 | Method for manufacturing light emitting device |
| TWI608760B (en) * | 2008-11-13 | 2017-12-11 | 行家光電有限公司 | Method of forming phosphor-converted light emitting devices |
| US20100119839A1 (en) * | 2008-11-13 | 2010-05-13 | Maven Optronics Corp. | System and Method for Forming a Thin-Film Phosphor Layer for Phosphor-Converted Light Emitting Devices |
| JP5353602B2 (en) * | 2009-09-25 | 2013-11-27 | 凸版印刷株式会社 | Manufacturing method of light source unit |
| JP5566785B2 (en) * | 2010-06-22 | 2014-08-06 | 日東電工株式会社 | Composite sheet |
| US20120153311A1 (en) * | 2010-12-17 | 2012-06-21 | Intematix Corporation | Low-cost solid-state based light emitting devices with photoluminescent wavelength conversion and their method of manufacture |
| JP5661657B2 (en) * | 2012-01-16 | 2015-01-28 | 信越化学工業株式会社 | Silicone resin composition, phosphor-containing wavelength conversion film, and cured products thereof |
| JP2013161862A (en) * | 2012-02-02 | 2013-08-19 | Konica Minolta Inc | Led device and manufacturing method of the same |
| JP2013214716A (en) * | 2012-03-06 | 2013-10-17 | Nitto Denko Corp | Fluorescent sealing sheet, light emitting diode device, and manufacturing method of light emitting diode device |
| JP6155827B2 (en) * | 2013-05-11 | 2017-07-05 | 日亜化学工業株式会社 | Method for manufacturing light emitting device |
| JP6237181B2 (en) * | 2013-12-06 | 2017-11-29 | 日亜化学工業株式会社 | Method for manufacturing light emitting device |
-
2015
- 2015-12-30 TW TW104144441A patent/TWI581465B/en active
-
2016
- 2016-12-29 JP JP2016257288A patent/JP6596410B2/en active Active
- 2016-12-30 KR KR1020160183990A patent/KR102091534B1/en active IP Right Grant
-
2019
- 2019-02-27 KR KR1020190023328A patent/KR20190031450A/en active Application Filing
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140361318A1 (en) * | 2005-02-18 | 2014-12-11 | Nichia Corporation | Light emitting device provided with lens for controlling light distribution characteristic |
| US20080099771A1 (en) * | 2006-10-31 | 2008-05-01 | Charng-Shyang Jong | Light emitting diode and wafer level package method, wafer level bonding method thereof, and circuit structure for wafer level package |
| TW201119090A (en) * | 2009-11-20 | 2011-06-01 | Everlight Electronics Co Ltd | Light emitting diode package and manufacturing method thereof |
| TW201143163A (en) * | 2010-05-20 | 2011-12-01 | Advanced Optoelectronic Tech | LED package |
| TW201327940A (en) * | 2011-12-30 | 2013-07-01 | Advanced Optoelectronic Tech | LED package |
| TW201344979A (en) * | 2012-04-27 | 2013-11-01 | Delta Electronics Inc | Light emitting device and manufacturing method thereof |
| TW201511370A (en) * | 2013-09-03 | 2015-03-16 | Delta Electronics Inc | Light emitting diode device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102091534B1 (en) | 2020-03-23 |
| JP6596410B2 (en) | 2019-10-23 |
| KR20170080528A (en) | 2017-07-10 |
| JP2017152681A (en) | 2017-08-31 |
| KR20190031450A (en) | 2019-03-26 |
| TW201724564A (en) | 2017-07-01 |
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