TWI579037B - Substrate liquid processing device and substrate liquid treatment method - Google Patents

Substrate liquid processing device and substrate liquid treatment method Download PDF

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Publication number
TWI579037B
TWI579037B TW103138346A TW103138346A TWI579037B TW I579037 B TWI579037 B TW I579037B TW 103138346 A TW103138346 A TW 103138346A TW 103138346 A TW103138346 A TW 103138346A TW I579037 B TWI579037 B TW I579037B
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TW
Taiwan
Prior art keywords
liquid
concentration
processing
treatment liquid
treatment
Prior art date
Application number
TW103138346A
Other languages
English (en)
Chinese (zh)
Other versions
TW201531331A (zh
Inventor
高木康弘
小宮洋司
信國力
佐竹圭吾
穴本篤史
Original Assignee
東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 東京威力科創股份有限公司 filed Critical 東京威力科創股份有限公司
Publication of TW201531331A publication Critical patent/TW201531331A/zh
Application granted granted Critical
Publication of TWI579037B publication Critical patent/TWI579037B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D11/00—Control of flow ratio
    • G05D11/02—Controlling ratio of two or more flows of fluid or fluent material
    • G05D11/13—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means
    • G05D11/135—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means by sensing at least one property of the mixture
    • G05D11/138—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means by sensing at least one property of the mixture by sensing the concentration of the mixture, e.g. measuring pH value
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Accessories For Mixers (AREA)
  • Weting (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
TW103138346A 2013-11-13 2014-11-05 Substrate liquid processing device and substrate liquid treatment method TWI579037B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013235304 2013-11-13
JP2014205113A JP6352143B2 (ja) 2013-11-13 2014-10-03 基板液処理装置及び基板液処理方法

Publications (2)

Publication Number Publication Date
TW201531331A TW201531331A (zh) 2015-08-16
TWI579037B true TWI579037B (zh) 2017-04-21

Family

ID=53043703

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103138346A TWI579037B (zh) 2013-11-13 2014-11-05 Substrate liquid processing device and substrate liquid treatment method

Country Status (5)

Country Link
US (2) US10162371B2 (https=)
JP (1) JP6352143B2 (https=)
KR (2) KR102289796B1 (https=)
CN (2) CN110197803B (https=)
TW (1) TWI579037B (https=)

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JP7101083B2 (ja) * 2018-08-23 2022-07-14 東京エレクトロン株式会社 基板液処理装置、基板液処理方法および記憶媒体
CN110875212B (zh) * 2018-08-31 2022-07-01 辛耘企业股份有限公司 基板处理装置
KR102221258B1 (ko) 2018-09-27 2021-03-02 세메스 주식회사 약액 토출 장치
JP7265879B2 (ja) * 2019-02-14 2023-04-27 株式会社Ｓｃｒｅｅｎホールディングス 基板乾燥方法および基板処理装置
CN111715134A (zh) * 2019-03-21 2020-09-29 长鑫存储技术有限公司 流体混合装置及其控制方法、刻蚀设备
JP2020175338A (ja) * 2019-04-19 2020-10-29 株式会社荏原製作所 機能水濃度制御システム、及び機能水濃度制御方法
CN110112085A (zh) * 2019-05-23 2019-08-09 德淮半导体有限公司 一种液体浓度控制装置
JP7264729B2 (ja) * 2019-05-31 2023-04-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP7393210B2 (ja) * 2019-06-28 2023-12-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7382164B2 (ja) * 2019-07-02 2023-11-16 東京エレクトロン株式会社 液処理装置および液処理方法
WO2021002367A1 (ja) * 2019-07-03 2021-01-07 東京エレクトロン株式会社 基板処理システム及び処理液調製方法
CN110828338B (zh) * 2019-09-30 2022-08-09 长江存储科技有限责任公司 浓度的调节方法及调节系统
CN110808218B (zh) * 2019-10-23 2022-07-08 长江存储科技有限责任公司 一种处理液供应装置的控制方法及处理液供应装置
JP7504679B2 (ja) * 2020-06-30 2024-06-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、および、基板処理方法
JP7504018B2 (ja) 2020-12-22 2024-06-21 東京エレクトロン株式会社 基板処理方法、及び基板処理装置
JP7710315B2 (ja) * 2021-06-01 2025-07-18 東京エレクトロン株式会社 基板処理方法および基板処理装置
CN114247684B (zh) * 2021-12-17 2023-04-14 北京北方华创微电子装备有限公司 供液系统和半导体清洗系统
JP7630458B2 (ja) * 2022-03-10 2025-02-17 芝浦メカトロニクス株式会社 処理液供給装置、基板処理装置及び処理液供給方法
CN115145319B (zh) * 2022-05-30 2025-04-04 北京华丞电子有限公司 压力控制方法、装置及半导体工艺设备
KR102612978B1 (ko) * 2022-08-02 2023-12-13 나가세 엔지니어링 서비스 코리아(주) 혼합 시스템
KR102707902B1 (ko) 2022-08-16 2024-09-20 세메스 주식회사 약액 공급장치 및 이를 이용한 기판 세정장치
WO2025022988A1 (ja) * 2023-07-21 2025-01-30 東京エレクトロン株式会社 処理液供給装置及び処理液調整方法

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Publication number Priority date Publication date Assignee Title
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Also Published As

Publication number Publication date
TW201531331A (zh) 2015-08-16
CN104637841A (zh) 2015-05-20
US10162371B2 (en) 2018-12-25
US10591935B2 (en) 2020-03-17
CN104637841B (zh) 2019-06-11
KR102339333B1 (ko) 2021-12-13
CN110197803B (zh) 2023-07-28
KR20150055561A (ko) 2015-05-21
KR102289796B1 (ko) 2021-08-12
US20190079544A1 (en) 2019-03-14
KR20210037641A (ko) 2021-04-06
JP6352143B2 (ja) 2018-07-04
JP2015119168A (ja) 2015-06-25
CN110197803A (zh) 2019-09-03
US20150131403A1 (en) 2015-05-14

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