WO2021002367A1 - 基板処理システム及び処理液調製方法 - Google Patents
基板処理システム及び処理液調製方法 Download PDFInfo
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- WO2021002367A1 WO2021002367A1 PCT/JP2020/025709 JP2020025709W WO2021002367A1 WO 2021002367 A1 WO2021002367 A1 WO 2021002367A1 JP 2020025709 W JP2020025709 W JP 2020025709W WO 2021002367 A1 WO2021002367 A1 WO 2021002367A1
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- Prior art keywords
- liquid
- treatment liquid
- tank
- concentration
- supply
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- 238000011282 treatment Methods 0.000 title claims abstract description 356
- 239000000758 substrate Substances 0.000 title claims abstract description 127
- 238000002360 preparation method Methods 0.000 title claims description 19
- 238000005259 measurement Methods 0.000 claims abstract description 41
- 238000007599 discharging Methods 0.000 claims abstract description 6
- 239000007788 liquid Substances 0.000 claims description 495
- 238000012545 processing Methods 0.000 claims description 253
- 238000000034 method Methods 0.000 claims description 15
- 239000008280 blood Substances 0.000 claims 1
- 210000004369 blood Anatomy 0.000 claims 1
- 239000008367 deionised water Substances 0.000 description 29
- 229910021641 deionized water Inorganic materials 0.000 description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 29
- 239000012530 fluid Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 10
- 238000012546 transfer Methods 0.000 description 10
- 238000011144 upstream manufacturing Methods 0.000 description 8
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 7
- 235000011114 ammonium hydroxide Nutrition 0.000 description 7
- 239000000908 ammonium hydroxide Substances 0.000 description 6
- 238000011084 recovery Methods 0.000 description 6
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D35/00—Filtering devices having features not specifically covered by groups B01D24/00 - B01D33/00, or for applications not specifically covered by groups B01D24/00 - B01D33/00; Auxiliary devices for filtration; Filter housing constructions
- B01D35/02—Filters adapted for location in special places, e.g. pipe-lines, pumps, stop-cocks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Definitions
- the present disclosure relates to a substrate processing system and a treatment liquid preparation method.
- a substrate processing system that circulates the processing liquid stored in the tank via a circulation line, supplies the processing liquid to the processing unit via a line branched from the circulation line, and processes the substrate using the processing liquid. It is known (see Patent Document 1 and Patent Document 2).
- the processing liquid in the tank is usually adjusted to a desired concentration suitable for substrate processing, and the processing liquid after adjusting the concentration is sent from the tank to the processing unit via a circulation line.
- substrate processing may be performed using a treatment liquid having a low concentration (for example, a concentration of 20 ppm or less).
- a treatment liquid having an ultra-low concentration for example, a concentration of 3 ppm or less
- the treatment liquid in the tank is adjusted to a desired low concentration or ultra-low concentration.
- strict concentration control is required, and it takes considerable time and effort.
- the concentration of a low-concentration or ultra-low-concentration treatment liquid easily changes by mixing even a small amount of treatment liquids having different concentrations. Therefore, it is not easy to stably maintain the concentration of the treatment liquid at a desired low concentration or ultra-low concentration.
- the processing liquid may remain in the flow path of the substrate processing system. Residue of such a treatment liquid may occur even if a liquid exchange treatment or a drain treatment is performed.
- concentration of the residual treatment liquid is different from the desired concentration (for example, when it is higher than the desired ultra-low concentration)
- the treatment liquid reaches from the tank to the treatment unit. During this period, the residual treatment liquid is mixed with the treatment liquid and the concentration of the treatment liquid fluctuates.
- the present disclosure provides a technique capable of rapidly adjusting a processing liquid to a desired concentration in a substrate processing system.
- One aspect of the present disclosure is a substrate processing system that processes a substrate using a treatment liquid containing a first liquid and a second liquid, a treatment liquid supply system that supplies the treatment liquid to the substrate treatment system, and a first.
- a treatment liquid adjusting system for supplying at least one of the liquid, the second liquid, and the treatment liquid to the treatment liquid supply system, and a control unit, and the treatment liquid supply system is connected to the treatment liquid adjustment system.
- a circulation line that is connected to the tank that stores the treatment liquid and flows out of the tank and returns to the tank, a branch line that is connected to the circulation line and the substrate processing system, and the treatment liquid that flows in the circulation line.
- a circulator a drain line through which the treatment liquid discharged from at least one of the tank and the circulation line flows, a drain adjustment unit for adjusting the discharge of the treatment liquid through the drain line, a tank, a circulation line, and a tank.
- the treatment liquid adjusting system has a concentration measurement line connected to the first liquid and a concentration sensor for measuring the concentration of the treatment liquid in at least one of the concentration measurement lines connected to the circulation line. It has a supply adjusting unit that regulates the supply to at least one of the second liquid and the processing liquid, and the control unit controls the circulatory system to supply a certain amount of the treatment liquid in the tank and the circulation line.
- the drain adjustment unit is controlled to adjust the discharge of the processing liquid, and the supply adjustment unit is controlled to be among the first liquid, the second liquid and the treatment liquid. It relates to a substrate processing system that regulates the supply to at least one of the tanks.
- the processing liquid can be quickly adjusted to a desired ultra-low concentration in the substrate processing system.
- FIG. 1 is a diagram showing an example of a schematic configuration of a substrate processing system.
- FIG. 2 is a diagram showing an example of a schematic configuration of a processing unit.
- FIG. 3 is a diagram showing a schematic configuration example of a substrate processing system, a processing liquid supply system, and a processing liquid adjusting system of the substrate processing system according to the first embodiment.
- FIG. 4 is a flowchart showing an example of a treatment liquid preparation method.
- FIG. 5 is a diagram showing a schematic configuration example of a substrate processing system, a processing liquid supply system, and a processing liquid adjusting system of the substrate processing system according to the second embodiment.
- FIG. 6 is a diagram showing a schematic configuration example of a substrate processing system, a processing liquid supply system, and a processing liquid adjusting system of the substrate processing system according to the third embodiment.
- FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to this embodiment.
- the X-axis, Y-axis, and Z-axis that are orthogonal to each other are defined, and the Z-axis positive direction is defined as the vertically upward direction.
- the substrate processing system 1 shown in FIG. 1 includes a loading / unloading station 2 and a processing station 3.
- the loading / unloading station 2 and the processing station 3 are provided adjacent to each other.
- the loading / unloading station 2 includes a carrier mounting section 11 and a transport section 12.
- a plurality of substrates, and in the present embodiment, a plurality of carriers C for accommodating a semiconductor wafer (hereinafter referred to as wafer W) in a horizontal state are mounted on the carrier mounting portion 11.
- the transport section 12 is provided adjacent to the carrier mounting section 11, and includes a substrate transport device 13 and a delivery section 14 inside.
- the substrate transfer device 13 includes a wafer holding mechanism for holding the wafer W. Further, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and can rotate around the vertical axis, and transfers the wafer W between the carrier C and the delivery portion 14 by using the wafer holding mechanism. Do.
- the processing station 3 is provided adjacent to the transport unit 12.
- the processing station 3 includes a transport unit 15 and a plurality of processing units 16.
- the plurality of processing units 16 are provided side by side on both sides of the transport unit 15.
- the transport unit 15 includes a substrate transport device 17 inside.
- the substrate transfer device 17 includes a wafer holding mechanism for holding the wafer W. Further, the substrate transfer device 17 is capable of moving in the horizontal direction and the vertical direction and turning around the vertical axis, and transfers the wafer W between the delivery unit 14 and the processing unit 16 by using the wafer holding mechanism. I do.
- the processing unit 16 performs predetermined substrate processing on the wafer W transported by the substrate transport device 17.
- the substrate processing system 1 includes a control device 4.
- the control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19.
- the storage unit 19 stores programs that control various processes executed in the substrate processing system 1.
- the control unit 18 controls the operation of the substrate processing system 1 by reading and executing the program stored in the storage unit 19.
- Such a program may be recorded on a storage medium readable by a computer, and may be installed from the storage medium in the storage unit 19 of the control device 4.
- Examples of storage media that can be read by a computer include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), and a memory card.
- the substrate transfer device 13 of the loading / unloading station 2 takes out the wafer W from the carrier C mounted on the carrier mounting portion 11, and receives the taken out wafer W. Placed on Watanabe 14. The wafer W placed on the delivery section 14 is taken out from the delivery section 14 by the substrate transfer device 17 of the processing station 3 and carried into the processing unit 16.
- the wafer W carried into the processing unit 16 is processed by the processing unit 16, then carried out from the processing unit 16 by the substrate transfer device 17, and placed on the delivery unit 14. Then, the processed wafer W placed on the delivery section 14 is returned to the carrier C of the carrier mounting section 11 by the substrate transfer device 13.
- FIG. 2 is a diagram showing a schematic configuration of the processing unit 16.
- the processing unit 16 includes a chamber 20, a substrate holding mechanism 30, a processing fluid supply unit 40, and a recovery cup 50.
- the chamber 20 accommodates the substrate holding mechanism 30, the processing fluid supply unit 40, and the recovery cup 50.
- An FFU (Fan Filter Unit) 21 is provided on the ceiling of the chamber 20.
- the FFU 21 forms a downflow in the chamber 20.
- the board holding mechanism 30 includes a holding portion 31, a strut portion 32, and a driving portion 33.
- the holding unit 31 holds the wafer W horizontally.
- the strut portion 32 is a member extending in the vertical direction, the base end portion is rotatably supported by the drive portion 33, and the holding portion 31 is horizontally supported at the tip portion.
- the drive unit 33 rotates the strut unit 32 around a vertical axis.
- the substrate holding mechanism 30 rotates the holding portion 31 supported by the supporting portion 32 by rotating the supporting portion 32 by using the driving unit 33, thereby rotating the wafer W held by the holding portion 31. ..
- the processing fluid supply unit 40 supplies the processing fluid to the wafer W.
- the processing fluid supply unit 40 is connected to the processing fluid supply source 70.
- the recovery cup 50 is arranged so as to surround the holding portion 31, and collects the processing liquid scattered from the wafer W by the rotation of the holding portion 31.
- a drainage port 51 is formed at the bottom of the recovery cup 50, and the treatment liquid collected by the recovery cup 50 is discharged from the drainage port 51 to the outside of the treatment unit 16. Further, at the bottom of the recovery cup 50, an exhaust port 52 for discharging the gas supplied from the FFU 21 to the outside of the processing unit 16 is formed.
- FIG. 3 is a diagram showing a schematic configuration example of the substrate processing system 21, the processing liquid supply system 22, and the processing liquid adjusting system 23 of the substrate processing system 1 according to the first embodiment.
- the substrate processing system 1 of the present embodiment includes a substrate processing system 21, a processing liquid supply system 22, a processing liquid adjusting system 23, and a control unit 18 (see FIG. 1).
- the substrate treatment system 21 treats the wafer W using a treatment liquid containing a first liquid (ammonium hydroxide (ammonia water) in this example) and a second liquid (DIW (Deionized Water) in this example). (For example, cleaning treatment) is performed.
- a treatment liquid containing a first liquid (ammonium hydroxide (ammonia water) in this example) and a second liquid (DIW (Deionized Water) in this example).
- DIW Deionized Water
- the specific components contained in the treatment liquid are not limited, and the components contained in the treatment liquid may be exactly the same as or different from the components contained in the first liquid or the second liquid.
- the processing liquid supply system 22 supplies the processing liquid to the substrate processing system 21.
- the treatment liquid adjusting system 23 supplies at least one of the first liquid, the second liquid, and the treatment liquid to the treatment liquid supply system 22.
- the control unit 18 is connected to components such as an on-off valve, a pump, a flow meter, and a concentration sensor of the substrate processing system 21, the processing liquid supply system 22, and the processing liquid adjusting system 23, and controls the operating state of each component. Or, the measurement result is received from each component.
- the substrate processing system 21 shown in FIG. 3 has a plurality of processing units 16 and a main return line 41.
- Each processing unit 16 has the structure shown in FIG. 2 described above, and the configuration of each processing unit 16 is shown in a simplified manner in FIG.
- the processing fluid supply unit 40 included in each processing unit 16 is connected to the main branch line 37, and the processing liquid sent via the main branch line 37 is transferred to the processing surface of the wafer W supported by the substrate holding mechanism 30. Supply.
- the main branch line 37 is provided with a plurality of on-off valves 55l assigned to each of the plurality of processing units 16.
- Each on-off valve 55l opens and closes under the control of the control unit 18, and adjusts the flow rate of the processing liquid from the main branch line 37 to the corresponding processing unit 16 (that is, the processing fluid supply unit 40) (whether or not the processing liquid is supplied).
- the main return line 41 is connected to the drainage port 51 (see FIG. 2) of each processing unit 16 and is also connected to the tank 35, and guides the processing liquid discharged from each processing unit 16 into the tank 35.
- the substrate processing system 21 shown in FIG. 3 is only an example, and the substrate processing system 21 may have another configuration.
- the substrate processing system 21 may have five or more processing units 16 (see FIG. 1), and three or less processing units 16 may be provided. You may have.
- a plurality of main branch lines 37 are directly connected to the circulation line 36 and these main branch lines 37 are connected to each of the plurality of processing units 16 (that is, the plurality of processing fluid supply units 40). Good.
- on-off valves (not shown) are provided in a plurality of parts of the main return line 41 assigned to each of the plurality of processing units 16, and the discharge of the processing liquid to the main return line 41 is opened and closed for each processing unit 16.
- a drain line (not shown) may be connected to each processing unit 16.
- the drain line and the main return line 41 may be connected to each processing unit 16 via a flow path switching unit (not shown). Under the control of the control unit 18, the flow path switching unit can flow the processing liquid discharged from each processing unit 16 to the drain line or the main return line 41.
- each on-off valve 55l is configured as a flow path switching tool such as a three-way valve, and for each on-off valve 55l, a flow path (main branch line 37) connected to the corresponding processing fluid supply unit 40 and a corresponding sub. It may be connected to a circulation line.
- each on-off valve 55l under the control of the control unit 18, sends the processing liquid sent from the main branch line 37 on the upstream side to the corresponding processing fluid supply unit 40 via the main branch line 37 on the downstream side. It can be switched between the mode in which the fluid is directed and the mode in which the fluid is directed to the corresponding sub-circulation line.
- upstream and downstream in the present specification refer to fluids flowing through the flow path of the substrate processing system 1 (in the present embodiment, the first liquid, the second liquid, and the treatment liquid). Is based on the flow direction of.
- the treatment liquid supply system 22 shown in FIG. 3 has a tank 35 and a circulation line 36.
- the tank 35 is connected to the treatment liquid adjusting system 23 (particularly, the main supply line 71), and the treatment liquid adjusting system 23 replenishes the first liquid, the second liquid and / or the treatment liquid, and stores the treatment liquid.
- the circulation line 36 is connected to the tank 35, and the processing liquid that exits the tank 35 and returns to the tank 35 is flowed.
- a main branch line 37 is connected to the circulation line 36 and the substrate processing system 21 (particularly, the processing fluid supply unit 40 of each processing unit 16).
- the circulation line 36 is sequentially provided with a circulation pump (circulator) 42, a filter 43, a heater 44, a flow meter 45, and a plurality of on-off valves 55h, 55i, 55j from the upstream side to the downstream side.
- the circulation pump 42 flows the processing liquid on the circulation line 36.
- the circulation pump 42 shown in FIG. 3 flows the processing liquid in the circulation line 36 in the counterclockwise direction.
- the processing liquid that has flowed into the circulation line 36 from the tank 35 is returned to the tank 35 again through the circulation pump 42, the filter 43, the heater 44, the flow meter 45, and the plurality of on-off valves 55h, 55i, 55j.
- the filter 43 removes foreign matter and air bubbles from the treatment liquid. Foreign matter and air bubbles are removed from the treatment liquid by passing the treatment liquid through the filter 43.
- the illustrated filter 43 is provided on the circulation line 36 on the downstream side of the circulation pump 42, and is arranged in the vicinity of the circulation pump 42. Since the treatment liquid that has flowed into the tank 35 via the circulation line 36 is stored in the tank 35, the treatment liquid that has flowed out from the tank 35 to the circulation line 36 may contain foreign matter such as deposits. In addition, air bubbles may be mixed in the treatment liquid due to the operation of the circulation pump 42. In order to effectively remove such foreign substances and air bubbles from the treatment liquid, it is preferable that the filter 43 is arranged on the downstream side and in the vicinity of the tank 35 and the circulation pump 42. Further, from the viewpoint of pouring a sufficient amount of the treatment liquid into the filter 43 vigorously, the filter 43 is preferably arranged on the downstream side and in the vicinity of the circulation pump 42.
- the heater 44 applies thermal energy to the processing liquid in the circulation line 36 to raise the temperature of the processing liquid.
- the flow meter 45 measures the flow rate of the processing liquid and transmits the measurement result to the control unit 18.
- the on-off valves 55h, 55i, 55j are provided on the circulation line 36 on the downstream side of the filter 43 and the heater 44, and the opening degree is adjusted under the control of the control unit 18.
- the flow rate of the processing liquid in the circulation line 36 is adjusted according to the opening degree of the on-off valves 55h, 55i, 55j.
- the on-off valve 55h and the on-off valve 55i provided adjacent to the connecting portions of the circulation line 36 and the main branch line 37 are liquid supply adjusting units for adjusting the supply of the processing liquid from the circulation line 36 to the substrate processing system 21.
- the supply of the processing liquid to the main branch line 37 and the substrate processing system 21 is stopped by closing the on-off valve 55h provided on the upstream side of the circulation line 36 to which the main branch line 37 is connected. Can be done.
- the on-off valves 55i and 55j provided on the downstream side of the circulation line 36 to which the main branch line 37 is connected the treatment liquid is returned to the tank 35 via the circulation line 36. You can stop it.
- a concentration measurement line 39 is connected to the circulation line 36 and the tank 35.
- One end of the illustrated concentration measurement line 39 is connected to a portion of the circulation line 36 between the filter 43 and the on-off valve 55h (liquid supply adjusting portion) (particularly the portion between the filter 43 and the heater 44). ing.
- the other end of the illustrated concentration measurement line 39 is directly connected to the tank 35.
- the concentration measurement line 39 is provided with an on-off valve 55k and a concentration sensor 46.
- the concentration sensor 46 measures the concentration of the processing liquid flowing through the concentration measurement line 39 (in this example, the concentration of the component contained in the first liquid (that is, the ammonia concentration)), and transmits the measurement result to the control unit 18.
- the specific configuration of the concentration sensor 46 is not limited, and typically a sensor that performs measurement based on the correlation between the conductivity and the concentration of the solution can be used as the concentration sensor 46.
- the on-off valve 55k opens and closes under the control of the control unit 18 to adjust the inflow amount of the processing liquid (including the presence or absence of the inflow of the treatment liquid) from the circulation line 36 to the concentration measurement line 39.
- the concentration sensor 46 preferably targets the treatment liquid from which foreign substances and bubbles have been removed, and is provided in the flow path on the downstream side of the filter 43 in the illustrated example. Is preferable.
- the concentration sensor 46 included in the processing liquid supply system 22 is not limited to the illustrated form. Although not shown, the concentration sensor 46 is a treatment liquid in at least one of a tank 35, a circulation line 36, a concentration measurement line connected to the tank 35, and a concentration measurement line 39 connected to the circulation line 36, for example. You may measure the concentration of. Further, the processing liquid supply system 22 may have a plurality of concentration sensors. For example, even if the concentration measurement lines 39 and 39a branch off from the circulation line 36 on the upstream side and the downstream side of the heater 44, respectively, and the concentration sensors 46 and 46a are provided on each of these concentration measurement lines 39 and 39a. Good. When a plurality of concentration sensors are provided, it is possible to accurately measure a wide range of concentrations as a whole by changing the measurable concentration range for each concentration sensor.
- the treatment liquid supply system 22 further includes a drain line 38 through which the treatment liquid discharged from the treatment liquid supply system 22 flows, and on-off valves 55e, 55f, 55g (drain) for adjusting the discharge of the treatment liquid through the drain line 38. It has an adjusting unit).
- the drain line 38 is flushed with the treatment liquid discharged from at least one of the tank 35 and the circulation line 36.
- the treatment liquid supply system 22 shown in FIG. 3 has three drain lines 38, and each drain line 38 is provided with on-off valves 55e, 55f, and 55g.
- the drain line 38 provided with the on-off valve 55e is directly connected to the tank 35.
- the drain line 38 provided with the on-off valve 55f is connected to a portion of the circulation line 36 between the tank 35 and the circulation pump 42.
- the drain line 38 provided with the on-off valve 55 g is connected to a portion of the circulation line 36 between the circulation pump 42 and the filter 43.
- Each drain line 38 may or may not merge with another drain line 38.
- the processing liquid adjusting system 23 has a supply adjusting unit (that is, on-off valves 55a, 55b, 55d).
- the supply adjusting unit (opening / closing valves 55a, 55b, 55d) is at least one of a first liquid (ammonium hydroxide), a second liquid (DIW) and a treatment liquid (mixed liquid of ammonium hydroxide and DIW). Adjust the supply to the tank 35.
- the illustrated treatment liquid adjusting system 23 has a main replenishment line 71 connected to the tank 35 and a sub replenishment line 72 that joins the main replenishment line 71.
- One end of the main supply line 71 is connected to the second liquid supply source 62, and the other end is connected to the tank 35.
- An on-off valve 55a, a concentration sensor 64, and an on-off valve 55d are sequentially provided on the main supply line 71 from the upstream side to the downstream side.
- One end of the sub-supply line 72 is connected to the first liquid supply source 61, and the other end is connected to the main supply line 71.
- the illustrated sub-supply line 72 is connected to a portion of the main supply line 71 between the concentration sensor 64 and the on-off valve 55a.
- a flow meter 63 and an on-off valve 55b are sequentially provided on the sub-supply line 72 from the upstream side to the downstream side.
- a drain line 38 is connected to a portion of the main supply line 71 downstream of the concentration sensor 64 (a portion between the concentration sensor 64 and the on-off valve 55d in the illustrated example), and the drain line 38 is connected to the drain line 38. Is provided with an on-off valve 55c.
- the on-off valve 55c opens and closes under the control of the control unit 18 to adjust the discharge of the treatment liquid from the treatment liquid adjustment system 23 (particularly the main supply line 71) via the drain line 38.
- the processing liquid supply system 22 and the processing liquid adjusting system 23 corresponds to the processing fluid supply source 70 shown in FIG.
- the combination of the treatment liquid supply system 22 and the treatment liquid adjustment system 23 is also referred to as a circulation cabinet 24, and the circulation cabinet 24 can be integrally configured.
- one circulation cabinet 24 is connected to one substrate processing system 21.
- the control unit 18 controls the drain adjusting unit (on-off valve 55e, on-off valve 55f and / or on-off valve 55g) based on the measurement result of the concentration sensor 46, and the processing liquid supply system 22 (tank 35 and / Or adjust the discharge of the treatment liquid from the circulation line 36). Further, the control unit 18 controls the supply adjustment unit (opening / closing valves 55a, 55b, 55d) based on the measurement result of the concentration sensor 46, and at least one of the first liquid, the second liquid, and the treatment liquid. Adjust the supply to the tank 35. In particular, the control unit 18 of the present embodiment controls the circulation pump 42 to circulate a certain amount of the treatment liquid in the tank 35 and the circulation line 36, and then discharges the above-mentioned treatment liquid and supplies DIW to the tank 35. I do.
- a treatment liquid having a concentration higher than the target concentration is stored in the tank 35, and the high-concentration treatment liquid is circulated in the flow path including the tank 35 and the circulation line 36.
- the treatment liquid is discharged from the tank 35 and / or the circulation line 36 and the DIW is supplied to the tank 35, so that the concentration of the treatment liquid in the treatment liquid supply system 22 is diluted.
- the concentration of the treatment liquid in the treatment liquid supply system 22 is adjusted to a desired ultra-low concentration.
- FIG. 4 is a flowchart showing an example of a treatment liquid preparation method. Although detailed description will be omitted, the control unit 18 appropriately controls elements such as an on-off valve included in the substrate processing system 1 in order to appropriately execute the following processing.
- the control unit 18 controls the supply adjustment unit (opening / closing valves 55a, 55b, 55d) and supplies a treatment liquid having a concentration higher than the target concentration (for example, 3 ppm) (for example, a treatment liquid having a concentration of about 20 ppm) to the tank 35. (S1 in FIG. 4).
- the concentration of the treatment liquid stored in the tank 35 becomes higher than the target concentration of the treatment liquid.
- the on-off valve 55a, on-off valve 55b, and on-off valve 55d are opened, and ammonium hydroxide from the first liquid supply source 61 and DIW from the second liquid supply source 62 merge at the main supply line 71.
- the on-off valve 55a may be closed, the on-off valve 55b and the on-off valve 55d may be opened, and only ammonium hydroxide from the first liquid supply source 61 may be additionally supplied to the tank 35 via the on-off valve 55d.
- the control unit 18 controls the circulation pump 42, and the circulation pump 42 circulates at least a certain amount of the treatment liquid in the tank 35 and the circulation line 36 (S2).
- the residual treatment liquid in the treatment liquid supply system 22 for example, circulation line 36, circulation pump 42, filter 43, heater 44, flow meter 45 and on-off valves 55h, 55i, 55j
- the concentration of the treatment liquid for example, the treatment liquid in the tank 35 and the circulation line 36
- the circulation time of the treatment liquid in this case is not limited.
- the circulation time of the treatment liquid is sufficient for the residual treatment liquid in the treatment liquid supply system 22 to be returned to the tank 35 together with the circulation treatment liquid.
- the time (for example, about 30 seconds) is preferable.
- the treatment liquid may be circulated in the substrate treatment system 21 when the treatment liquid is circulated in the treatment liquid supply system 22 (S2).
- the processing liquid may also be circulated in the tank 35, the circulation line 36, the main branch line 37, the sub circulation line, and the main return line 41.
- the concentration of the processing liquid measured by the concentration sensor 46 is acquired by the control unit 18. Then, the control unit 18 determines whether or not the concentration of the processing liquid measured by the concentration sensor 46 has reached the target concentration (S3).
- the target concentration may be a specific preset value, but is typically preset to a concentration within a range.
- the concentration of the treatment liquid measured by the concentration sensor 46 reaches the target concentration (Y in S3), the preparation of the treatment liquid having the desired concentration is completed, and the treatment liquid preparation process is completed.
- the concentration of the treatment liquid measured by the concentration sensor 46 does not reach the target concentration (N in S3), a part of the treatment liquid in the treatment liquid supply system 22 is discharged via the drain line 38 (S4), and the treatment is performed. DIW is supplied from the liquid adjusting system 23 to the tank 35 (S5). That is, the control unit 18 controls the drain adjusting unit (on-off valve 55e, on-off valve 55f and / or on-off valve 55g) based on the measurement result of the concentration sensor 46, and the drain adjusting unit adjusts the discharge of the processing liquid.
- the control unit 18 controls the drain adjusting unit (on-off valve 55e, on-off valve 55f and / or on-off valve 55g) based on the measurement result of the concentration sensor 46, and the drain adjusting unit adjusts the discharge of the processing liquid.
- control unit 18 controls the supply adjustment unit (on-off valves 55a, 55b, 55d) based on the measurement result of the concentration sensor 46, and the supply adjustment unit adjusts the supply of DIW to the tank 35. As a result, the concentration of the treatment liquid in the tank 35 is diluted and brought closer to the target concentration.
- the DIW is supplied to the tank 35 after the discharge of the treatment liquid is completed, but the treatment liquid is discharged and the DIW is supplied to the tank 35.
- the timing of the call is not limited.
- the discharge amount of the treatment liquid through the drain line 38 and the supply amount of DIW to the tank 35 are not limited, but as the discharge amount of the treatment liquid and the supply amount of DIW increase, the concentration of the treatment liquid in the tank 35 decreases. The degree will increase.
- the treatment liquid in an amount of about 75% to 85% of the amount of the treatment liquid in the tank 35 immediately before the discharge of the treatment liquid (S4) and the supply of DIW (S5) is discharged via the drain line 38. Then, the same amount of DIW as the amount of the treatment liquid discharged can be supplied to the tank 35.
- the discharge amount of the treatment liquid and the supply amount of DIW may be predetermined amounts, but the discharge amount of the treatment liquid and the supply amount of DIW depend on the measurement result of the concentration sensor 46 in the treatment liquid supply system 22. May be decided.
- the control unit 18 may acquire the difference between the concentration of the treatment liquid and the target concentration derived from the measurement result of the concentration sensor 46 after the circulation of the treatment liquid (S2).
- the control unit 18 may determine the discharge amount of the treatment liquid from the treatment liquid supply system 22 and the supply amount of the DIW to the tank 35 based on the difference between the concentration of the treatment liquid and the target concentration.
- the control unit 18 controls the drain adjustment unit and the supply adjustment unit based on the result of the determination.
- control unit 18 may acquire the concentration difference of the processing liquid (hereinafter, also referred to as “circulation concentration difference”) derived from the measurement result of the concentration sensor 46 of the circulation line 36 before and after the circulation of the treatment liquid (S2). ..
- concentration difference derived from the measurement result of the concentration sensor 46 of the circulation line 36 before and after the circulation of the treatment liquid (S2). ..
- concentration of the treatment liquid after the circulation (S2) of the treatment liquid deviates from the target concentration
- the control unit 18 is based on the condition of the circulation concentration difference, the concentration of the treatment liquid after circulation, and the target concentration.
- the discharge amount of the treatment liquid and the supply amount of the DIW to the tank 35 may be determined.
- the concentration of the processing liquid after circulation referred to here is derived from the measurement result of the concentration sensor 46.
- the treatment liquid circulation (S2) and the determination of whether or not the treatment liquid concentration has reached the target concentration (S3) are performed again. Will be. Then, when it is determined that the concentration of the treatment liquid has reached the target concentration, the preparation process of the treatment liquid is completed, and when it is determined that the concentration of the treatment liquid has not reached the target concentration, the treatment liquid is prepared. Discharge (S4) and DIW supply (S5) are performed again.
- control unit 18 controls the drain adjustment unit, the supply adjustment unit, and the circulation pump 42, discharges the treatment liquid from the treatment liquid supply system 22 until the concentration of the treatment liquid reaches the target concentration, and DIW to the tank 35. And the circulation of the treatment liquid in the treatment liquid supply system 22 are repeated.
- control unit 18 controls the circulation pump 42, the drain adjustment unit and the supply adjustment unit after supplying the treatment liquid having a concentration higher than the target concentration to the tank 35, and then controls the treatment liquid in the tank 35 and the circulation line 36. It circulates, discharges the treatment liquid, and supplies the DIW to the tank 35.
- control unit 18 controls the circulation pump 42 after discharging the treatment liquid from the treatment liquid supply system 22 and supplying DIW to the tank 35, and at least a certain amount of the treatment liquid in the tank 35 and the circulation line 36. To circulate. Then, the control unit 18 controls the drain adjustment unit, the supply adjustment unit, and the circulation pump 42 until the measurement result of the concentration sensor 46 after circulation of a certain amount of the treatment liquid reaches the target concentration, and discharges the treatment liquid, DIW. Is supplied to the tank 35, and a certain amount of the treatment liquid is circulated repeatedly.
- the concentration imbalance between the treatment liquid in the tank 35 and the residual treatment liquid whose concentration has changed due to the discharge of the treatment liquid from the treatment liquid supply system 22 and the supply of DIW to the tank 35 is eliminated. Therefore, the concentration of the treatment liquid in the tank 35 can be made uniform while approaching the target concentration.
- the concentration of the treatment liquid in the tank 35 can be adjusted while making the concentration of the treatment liquid uniform in the entire treatment liquid supply system 22, and the concentration of the treatment liquid is supplied to the substrate treatment system 21.
- the concentration of the treatment liquid can be appropriately controlled.
- a treatment solution having a high concentration can be prepared with high accuracy.
- the concentration of the treatment liquid in the entire treatment liquid supply system 22 including the residual treatment liquid is made uniform, the concentration of the treatment liquid is measured by the concentration sensor 46, and it is necessary to discharge the treatment liquid and supply DIW. Is determined.
- the concentration sensor 46 By adjusting the concentration of the treatment liquid in the tank 35 while considering the residual treatment liquid in this way, the treatment liquid in the treatment liquid supply system 22 is quickly adjusted to a desired concentration (ultra-low concentration in the present embodiment). be able to.
- the treatment liquid in the tank is adjusted to a desired concentration without circulating the treatment liquid, and then the treatment liquid is circulated, and the treatment liquid in the tank deviates from the desired concentration due to the influence of the residual treatment liquid.
- the treatment liquid in the tank is repeatedly adjusted.
- the concentration of the treatment liquid is not unintentionally changed due to such a residual treatment liquid, so that the concentration of the treatment liquid is quickly adjusted to the desired concentration. Can be adjusted.
- the concentration of the treatment liquid in the tank 35 is gradually diluted.
- the concentration of the treatment liquid in the treatment liquid supply system 22 can be stably adjusted to the target concentration, and even if the target concentration is low (particularly, an ultra-low concentration of 3 ppm or less), the treatment liquid having a desired concentration can be obtained. It can be prepared with high accuracy and stability.
- a plurality of treatment liquid supply systems 22 may be provided.
- a switching unit for switching the connection state between each of the plurality of processing liquid supply systems 22 and the substrate processing system 21 may be provided. It is preferable that the control unit 18 controls the switching unit and switches the processing liquid supply system 22 that supplies the processing liquid to the substrate processing system 21.
- FIG. 5 is a diagram showing a schematic configuration example of the substrate processing system 21, the processing liquid supply system 22, and the processing liquid adjusting system 23 of the substrate processing system 1 according to the second embodiment.
- the substrate processing system 1 shown in FIG. 5 includes one substrate processing system 21, two processing liquid supply systems 22 (that is, the first treatment liquid supply system 22a and the second treatment liquid supply system 22b), and one treatment liquid adjustment system 23. To be equipped.
- Each processing liquid supply system 22 is connected to the substrate processing system 21 and is also connected to the processing liquid adjusting system 23.
- a replenishment switching tool 76 that can be realized by a three-way valve or the like is provided.
- the main supply line 71 is connected to the supply switch 76, and the first supply line 71a and the second supply line 71b are connected.
- the first replenishment line 71a is connected to the tank 35 of the first treatment liquid supply system 22a
- the second replenishment line 71b is connected to the tank 35 of the second treatment liquid supply system 22b.
- the replenishment switching tool 76 switches the connection and non-connection of the first replenishment line 71a and the second replenishment line 71b to the main replenishment line 71 on the upstream side.
- the main branch line 37 is connected to the circulation line 36 of the first processing liquid supply system 22a via the supply switching unit 74 and the first branch line 37a, and the second processing is performed via the supply switching unit 74 and the second branch line 37b. It is connected to the circulation line 36 of the liquid supply system 22b. Under the control of the control unit 18, the supply switching unit 74 switches the connection and non-connection of the first branch line 37a and the second branch line 37b to the main branch line 37.
- the main return line 41 is connected to the tank 35 of the first processing liquid supply system 22a via the return switching unit 75 and the first return line 41a, and the second treatment liquid is connected to the tank 35 via the return switching unit 75 and the second return line 41b. It is connected to the tank 35 of the supply system 22b.
- the return switching unit 75 switches the connection and non-connection of the first return line 41a and the second return line 41b to the main return line 41 under the control of the control unit 18.
- one of the first processing liquid supply system 22a and the second treatment liquid supply system 22b is selectively used to process the wafer W in the substrate processing system 21.
- the treatment liquid can be prepared.
- the processing liquid is supplied from the first processing liquid supply system 22a to the substrate processing system 21 to process the wafer W in each processing unit 16, and the treatment liquid is prepared in the second processing liquid supply system 22b (see FIG. 4). ) Can be done.
- the supply switching unit 74 connects the first branch line 37a to the main branch line 37
- the return switching unit 75 connects the first return line 41a to the main return line 41
- the replenishment switching tool 76 connects the main replenishment line 71. Is connected to the second supply line 71b.
- the processing liquid is supplied from the second processing liquid supply system 22b to the substrate processing system 21 to process the wafer W in each processing unit 16, while the treatment liquid is prepared in the first processing liquid supply system 22a. You can also do it.
- the first treatment liquid supply system 22a and the second treatment liquid supply system 22b are provided so as to be connectable to the common treatment liquid adjustment system 23.
- one circulation cabinet 24 is configured by the combination of the first treatment liquid supply system 22a, the second treatment liquid supply system 22b, and the treatment liquid adjustment system 23.
- the substrate processing system 1 of the present embodiment it is possible to properly use the first treatment liquid supply system 22a and the second treatment liquid supply system 22b to perform substrate treatment and preparation of a treatment liquid having a desired concentration. it can. Therefore, the first treatment liquid supply system 22a and the second treatment liquid supply system 22b can be alternately used as the treatment liquid supply system 22 used for each of the substrate treatment and the preparation of the treatment liquid. In this case, the processing of the entire system can be performed efficiently. In particular, the processing time of the entire system can be shortened by simultaneously performing the substrate treatment and the preparation of the treatment liquid having a desired concentration in the first treatment liquid supply system 22a and the second treatment liquid supply system 22b.
- a plurality of treatment liquid adjusting systems 23 may be provided.
- at least one of the first liquid, the second liquid, and the treatment liquid may be supplied from each of the plurality of treatment liquid adjustment systems 23 to the plurality of treatment liquid supply systems 22.
- FIG. 6 is a diagram showing a schematic configuration example of the substrate processing system 21, the processing liquid supply system 22, and the processing liquid adjusting system 23 of the substrate processing system 1 according to the third embodiment.
- the substrate processing system 1 shown in FIG. 6 includes a plurality of circulation cabinets 24 (specifically, a first circulation cabinet 24a and a second circulation cabinet 24b).
- Each circulation cabinet 24 includes a combination of a treatment liquid supply system 22 and a treatment liquid adjustment system 23. That is, the first circulation cabinet 24a includes a first treatment liquid supply system 22a and a first treatment liquid adjustment system 23a that are connected to each other.
- the second circulation cabinet 24b includes a second treatment liquid supply system 22b and a second treatment liquid adjustment system 23b that are connected to each other.
- the first branch line 37a is connected to the circulation line 36 of the first treatment liquid supply system 22a, and the first branch line 37a is connected to the main branch line 37 via the supply switching unit 74.
- the second branch line 37b is connected to the circulation line 36 of the second treatment liquid supply system 22b, and the second branch line 37b is connected to the main branch line 37 via the supply switching unit 74.
- the supply switching unit 74 switches the connection and non-connection of the first branch line 37a and the second branch line 37b to the main branch line 37.
- the first return line 41a is connected to the tank 35 of the first treatment liquid supply system 22a, and the first return line 41a is connected to the main return line 41 via the return switching unit 75.
- the second return line 41b is connected to the tank 35 of the second treatment liquid supply system 22b, and the second return line 41b is connected to the main return line 41 via the return switching unit 75.
- the return switching unit 75 switches the connection and non-connection of the first return line 41a and the second return line 41b to the main return line 41 under the control of the control unit 18.
- one of the first circulation cabinet 24a and the second second circulation cabinet 24b is selectively used to process or process the wafer W in the substrate processing system 21.
- the liquid can be prepared.
- the treatment liquid is prepared in the second circulation cabinet 24b (see FIG. 4). It can be carried out.
- the supply switching unit 74 connects the first branch line 37a to the main branch line 37
- the return switching unit 75 connects the first return line 41a to the main return line 41.
- the second circulation cabinet 24b (particularly the second treatment liquid supply system 22b) is connected to the substrate treatment system 21 to process the wafer W, and the treatment liquid is prepared in the first circulation cabinet 24a. You can also.
- the first circulation cabinet 24a and the second circulation cabinet 24b can be properly used to perform substrate treatment and preparation of a treatment liquid having a desired concentration. Therefore, the first circulation cabinet 24a and the second circulation cabinet 24b can be alternately used as the circulation cabinet 24 used for the substrate treatment and the preparation of the treatment liquid. In this case, the processing of the entire system can be performed efficiently. In particular, the processing time of the entire system can be shortened by simultaneously performing the substrate processing and the preparation of the processing liquid having a desired concentration in the first circulation cabinet 24a and the second circulation cabinet 24b.
- a second liquid (DIW) is supplied to the tank 35 in order to dilute the concentration of the treatment liquid.
- a treatment liquid (a mixed liquid of the first liquid and the second liquid) may be supplied from the treatment liquid adjustment system 23 to the tank 35.
- a treatment liquid having a concentration lower than the target concentration is supplied from the treatment liquid adjustment system 23 to the tank 35.
- the first liquid (ammonium hydroxide) may be supplied from the treatment liquid adjustment system 23 to the tank 35, or the treatment liquid may be supplied. It may be supplied.
- the treatment liquid having a concentration higher than the target concentration is supplied to the tank 35 from the treatment liquid adjustment system 23 in order to increase the concentration of the treatment liquid in the tank 35 to adjust to the target concentration.
- control unit 18 discharges the processing liquid and supplies the treatment liquid to at least one of the tank 35 of the first liquid, the second liquid and the treatment liquid until the measurement result of the concentration sensor reaches the target concentration. repeat.
- the technical categories that embody the above-mentioned technical ideas are not limited.
- the above-mentioned substrate processing system may be applied to other devices.
- the above-mentioned technical idea may be embodied by a computer program for causing a computer to execute one or a plurality of procedures (steps) included in the above-mentioned treatment liquid preparation method.
- the above-mentioned technical idea may be embodied by a computer-readable non-transitory recording medium in which such a computer program is recorded.
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Abstract
Description
図3は、第1実施形態に係る基板処理システム1の基板処理系21、処理液供給系22及び処理液調整系23の概略構成例を示す図である。
本実施形態において上述の第1実施形態と同一又は類似の要素には同一の符号を付し、その詳細な説明を省略する。
本実施形態において上述の第1実施形態及び第2実施形態と同一又は類似の要素には同一の符号を付し、その詳細な説明を省略する。
上述の各実施形態では、処理液の濃度が目標濃度(すなわち超低濃度)に達していない場合、処理液の濃度を薄めるために、タンク35には第2の液(DIW)が供給される(図4のS5参照)。この場合、第2の液(DIW)の代わりに、処理液(第1の液及び第2の液の混合液)が処理液調整系23からタンク35に供給されてもよい。ただし、タンク35内の処理液の濃度を下げて目標濃度に調整するために、目標濃度よりも低い濃度の処理液が処理液調整系23からタンク35に供給される。
Claims (10)
- 第1の液及び第2の液を含有する処理液を使って基板を処理する基板処理系と、
前記基板処理系に前記処理液を供給する処理液供給系と、
前記第1の液、前記第2の液及び前記処理液のうちの少なくともいずれかを前記処理液供給系に供給する処理液調整系と、
制御部と、を備え、
前記処理液供給系は、
前記処理液調整系に接続され、前記処理液を貯留するタンクと
前記タンクに接続され、前記タンクから出て前記タンクに戻る前記処理液が流される循環ラインと、
前記循環ライン及び前記基板処理系に接続される分岐ラインと、
前記循環ラインにおいて前記処理液を流す循環器と、
前記タンク及び前記循環ラインのうちの少なくともいずれかから排出される前記処理液が流されるドレーンラインと、
前記ドレーンラインを介した前記処理液の排出を調整するドレーン調整部と、
前記タンク、前記循環ライン、前記タンクに接続される濃度計測ライン、及び前記循環ラインに接続される濃度計測ラインのうちの少なくともいずれかにおける前記処理液の濃度を計測する濃度センサと、を有し、
前記処理液調整系は、前記第1の液、前記第2の液及び前記処理液のうちの少なくともいずれかの前記タンクへの供給を調整する供給調整部を有し、
前記制御部は、前記循環器を制御して前記タンク及び前記循環ラインにおいてある量の処理液を循環させた後の前記濃度センサの計測結果に基づき、前記ドレーン調整部を制御して前記処理液の排出を調整し、前記供給調整部を制御して前記第1の液、前記第2の液及び前記処理液のうちの少なくともいずれかの前記タンクへの供給を調整する基板処理システム。 - 前記制御部は、前記濃度センサの計測結果が目標濃度に達するまで、前記ドレーン調整部及び前記供給調整部を制御して、前記処理液の排出及び前記第1の液、前記第2の液及び前記処理液のうちの少なくともいずれかの前記タンクへの供給を繰り返す請求項1に記載の基板処理システム。
- 前記制御部は、
前記処理液の排出及び前記第1の液、前記第2の液及び前記処理液のうちの少なくともいずれかの前記タンクへの供給を行った後に、前記循環器を制御して前記タンク及び前記循環ラインにおいてある量の処理液を循環させ、
前記ある量の処理液の循環後の前記濃度センサの計測結果が前記目標濃度に達するまで、前記ドレーン調整部、前記供給調整部及び前記循環器を制御して、前記処理液の排出、前記第1の液、前記第2の液及び前記処理液のうちの少なくともいずれかの前記タンクへの供給、及び前記ある量の処理液の循環を繰り返す請求項2に記載の基板処理システム。 - 前記制御部は、前記濃度センサの計測結果から導き出される前記処理液の濃度と前記目標濃度との差に基づいて、前記処理液の排出量及び前記第1の液、前記第2の液及び前記処理液のうちの少なくともいずれかの前記タンクへの供給量を決定し、当該決定の結果に基づいて前記ドレーン調整部及び前記供給調整部を制御する請求項2又は3に記載の基板処理システム。
- 前記制御部は、前記供給調整部を制御して濃度が前記目標濃度よりも高い前記処理液を前記タンクに供給した後に、前記循環器、前記ドレーン調整部及び前記供給調整部を制御して、前記タンク及び前記循環ラインにおける前記処理液の循環、前記処理液の排出及び前記第1の液、前記第2の液及び前記処理液のうちの少なくともいずれかの前記タンクへの供給を行う請求項2~4のいずれか一項に記載の基板処理システム。
- 前記循環ラインにおいて前記循環器よりも下流側に設けられるフィルタと、
前記循環ラインにおいて前記フィルタよりも下流側に設けられ、前記循環ラインから前記基板処理系への前記処理液の供給を調整する液供給調整部と、を更に備え、
前記濃度計測ラインは、前記循環ラインのうちの前記フィルタと前記液供給調整部との間の部分に接続され、
前記濃度センサは、前記濃度計測ラインを流れる前記処理液の濃度を計測する請求項1~5のいずれか一項に記載の基板処理システム。 - 前記処理液供給系は複数設けられ、
前記複数の処理液供給系の各々と前記基板処理系との間の接続状態を切り換える切換部が設けられ、
前記制御部は、切換部を制御し、前記基板処理系に前記処理液を供給する前記処理液供給系を切り換える請求項1~6のいずれか一項に記載の基板処理システム。 - 前記処理液調整系は複数設けられ、
前記複数の処理液供給系は、前記複数の処理液調整系のそれぞれから、前記第1の液、前記第2の液及び前記処理液のうちの少なくともいずれかが供給される請求項7に記載の基板処理システム。 - 前記基板処理系は、
前記分岐ラインに接続され、前記分岐ラインからの前記処理液を前記基板に供給する処理ユニットと、
前記処理ユニットから排出される前記処理液を前記タンクに案内する戻しラインと、を有する請求項1~8のいずれか一項に記載の基板処理システム。 - 第1の液及び第2の液を含有する処理液を使って基板を処理する基板処理系と、前記基板処理系に前記処理液を供給する処理液供給系であって、前記処理液を貯留するタンク、前記タンクに接続され前記タンクから出て前記タンクに戻る前記処理液が流される循環ライン、前記循環ラインにおいて前記処理液を流す循環器、前記タンク及び前記循環ラインのうちの少なくともいずれかから排出される前記処理液が流されるドレーンライン、前記処理液の排出を調整するドレーン調整部、及び前記タンク、前記循環ライン、前記タンクに接続される濃度計測ライン、及び前記循環ラインに接続される濃度計測ラインのうちの少なくともいずれかにおける前記処理液の濃度を計測する濃度センサを有する処理液供給系と、前記第1の液、前記第2の液及び前記処理液のうちの少なくともいずれかを前記処理液供給系に供給する処理液調整系であって、前記第1の液、前記第2の液及び前記処理液のうちの少なくともいずれかの前記タンクへの供給を調整する供給調整部を有する処理液調整系と、を備える基板処理システムにおいて行われる処理液調製方法であって、
前記循環器によって前記タンク及び前記循環ラインにおいてある量の処理液を循環させる工程と、
前記ある量の処理液を循環させた後に、前記濃度センサによって前記処理液の濃度を計測する工程と、
前記濃度センサの計測結果に基づいて、前記ドレーン調整部を制御して前記処理液の排出を調整する工程と、
前記濃度センサの計測結果に基づいて、前記供給調整部を制御して前記第1の液、前記第2の液及び前記処理液のうちの少なくともいずれかの前記タンクへの供給を調整する工程と、を含む処理液調製方法。
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