TWI576869B - 被動元件結構及其製作方法 - Google Patents

被動元件結構及其製作方法 Download PDF

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Publication number
TWI576869B
TWI576869B TW104101797A TW104101797A TWI576869B TW I576869 B TWI576869 B TW I576869B TW 104101797 A TW104101797 A TW 104101797A TW 104101797 A TW104101797 A TW 104101797A TW I576869 B TWI576869 B TW I576869B
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Taiwan
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layer
passive component
barrier layer
copper blocks
component structure
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TW104101797A
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English (en)
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TW201530577A (zh
Inventor
賴俊諺
胡毓文
樓百堯
林佳昇
何彥仕
關欣
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精材科技股份有限公司
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Publication of TW201530577A publication Critical patent/TW201530577A/zh
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Description

被動元件結構及其製作方法
本發明是有關一種被動元件結構及一種被動元件結構的製作方法。
習知的電感結構可包含矽基板與複數個銅塊。矽基板具有複數個焊墊(bond pad)。銅塊以電鍍的方式分別形成於焊墊上，具有高頻傳輸的功能。在後續製程中，錫球(BGA)或導電凸塊可透過銅塊與矽基板的焊墊電性連接。由於鍚鉛材料無法直接黏著於銅塊，所以當銅塊電鍍完成後，需再依序電鍍鎳層與金層。其中鎳層具有阻值高的特性，可防止金層與銅塊在高溫環境中互相熔合，而金層可防止銅塊氧化。
藉由鎳層與金層的雖可讓錫球或導電凸塊黏著於銅塊，但實際上在電感結構中，僅有少數的銅塊在後續製程(例如植錫球製程或打線製程)需與導電凸塊或錫球電性連接，大多數的銅塊並不需電性連接錫球或導電凸塊。然而，一般而言，電感結構在製作時，因為製程能力不足， 只能在每一銅塊上均電鍍鎳層與金層。
如此一來，不僅會造成材料(例如金)的浪費，且所有的銅塊上均電鍍鎳層與金層，會造成電感結構的線路總電阻值升高，造成效率下降，使電感結構的電感品質係數難以提升。
本發明之一技術態樣為一種被動元件結構。
根據本發明一實施方式，一種被動元件結構包含基板、保護層、圖案化的導電層、複數個銅塊、擴散阻障層與抗氧化層。基板具有複數個焊墊。保護層位於基板與焊墊上。保護層具有複數個保護層開口。保護層開口分別與焊墊位置對應。導電層位於焊墊與保護層緊鄰保護層開口的表面上。銅塊位於導電層上。擴散阻障層位於銅塊的至少一者上。抗氧化層覆蓋於擴散阻障層。
在本發明一實施方式中，上述被動元件結構更包含阻隔層。阻隔層位於保護層與銅塊上。阻隔層具有阻隔層開口。阻隔層開口與抗氧化層位置對應。
在本發明一實施方式中，上述被動元件結構更包含強化層。強化層位於擴散阻障層與抗氧化層之間。
在本發明一實施方式中，上述強化層的材質包含鈀。
在本發明一實施方式中，上述擴散阻障層的材質包含鎳。
在本發明一實施方式中，上述抗氧化層的材質包含金。
在本發明一實施方式中，上述抗氧化層的厚度介於0.01至0.1μm。
在本發明一實施方式中，上述被動元件結構更包含導電結構。導電結構電性連接於抗氧化層。
在本發明一實施方式中，上述導電結構包含錫球或導線。
本發明之另一技術態樣為一種被動元件結構的製作方法。
根據本發明一實施方式，一種被動元件結構的製作方法包含下列步驟：(a)提供具有複數個焊墊的基板。(b)形成保護層於基板上，且焊墊分別由保護層的複數個保護層開口露出。(c)形成導電層於焊墊與保護層上。(d)形成圖案化的光阻層於導電層上，且緊鄰保護層開口的導電層由光阻層的複數個光阻層開口露出。(e)分別電鍍複數個銅塊於光阻層開口中的導電層上。(f)去除光阻層與未被銅塊覆蓋的導電層。(g)形成阻隔層於銅塊與保護層上，其中銅塊的至少一者由阻隔層的阻隔層開口露出。(h)依序化學鍍擴散阻障層與抗氧化層於露出阻隔層開口的銅塊上。
在本發明一實施方式中，上述步驟(h)更包含：化學鍍強化層於擴散阻障層上。
在本發明一實施方式中，上述步驟(f)包含：蝕刻未被銅塊覆蓋的導電層。
在本發明一實施方式中，上述阻隔層的材質為防焊綠漆。
在本發明一實施方式中，上述阻隔層的材質為光阻，被動元件結構的製作方法更包含：去除阻隔層。
在本發明一實施方式中，上述步驟(b)包含：圖案化保護層，使保護層具有保護層開口。
在本發明上述實施方式中，被動元件結構及其製作方法可選擇性地在銅塊上形成擴散阻障層與抗氧化層，讓在後續製程(例如植錫球製程或打線製程)需電性連接錫球或導線的銅塊才形成擴散阻障層及抗氧化層，其它銅塊則不形成擴散阻障層及抗氧化層。此外，抗氧化層係以化學鍍製程形成於銅塊上，因此抗氧化層的厚度可較習知以電鍍形成之抗氧化層的厚度薄。如此一來，本發明之被動元件結構及其製作方法不僅可節省擴散阻障層與抗氧化層的材料花費，且能降低被動元件結構的線路總電阻值，造成效率提升，使被動元件結構的電感品質係數得以提升。
100‧‧‧被動元件結構
100a‧‧‧被動元件結構
100b‧‧‧被動元件結構
100c‧‧‧被動元件結構
100d‧‧‧被動元件結構
110‧‧‧基板
112‧‧‧焊墊
120‧‧‧保護層
122‧‧‧保護層開口
130‧‧‧導電層
140‧‧‧銅塊
142‧‧‧頂面
144‧‧‧側面
150‧‧‧擴散阻障層
160‧‧‧抗氧化層
170‧‧‧強化層
180‧‧‧阻隔層
180a‧‧‧阻隔層
182‧‧‧阻隔層開口
190‧‧‧導電結構
190a‧‧‧導電結構
210‧‧‧線路層
220‧‧‧光阻層
222‧‧‧光阻層開口
2-2‧‧‧線段
L1‧‧‧折線
L2‧‧‧折線
S1‧‧‧步驟
S2‧‧‧步驟
S3‧‧‧步驟
S4‧‧‧步驟
S5‧‧‧步驟
S6‧‧‧步驟
S7‧‧‧步驟
S8‧‧‧步驟
第1圖繪示根據本發明一實施方式之被動元件結構的俯視圖。
第2圖繪示第1圖之被動元件結構沿線段2-2的剖面圖。
第3圖繪示根據本發明另一實施方式之被動元件結構 的剖面圖，其剖面位置與第2圖相同。
第4圖繪示根據本發明又一實施方式之被動元件結構的剖面圖，其剖面位置與第2圖相同。
第5圖繪示根據本發明再一實施方式之被動元件結構的剖面圖，其剖面位置與第3圖相同。
第6圖繪示根據本發明一實施方式之被動元件結構的製作方法的流程圖。
第7圖繪示第6圖之焊墊分別由保護層開口露出後的剖面圖。
第8圖繪示第7圖之焊墊與保護層形成導電層後的剖面圖。
第9圖繪示第8圖之導電層形成圖案化的光阻層後的剖面圖。
第10圖繪示第9圖之光阻層開口中的導電層形成銅塊後的剖面圖。
第11圖繪示第10圖之光阻層與未被銅塊覆蓋的導電層去除後的剖面圖。
第12A圖繪示第11圖之銅塊與保護層形成阻隔層後的剖面圖。
第12B圖繪示第12A圖的另一實施方式。
第13A圖繪示第11圖之銅塊與保護層形成阻隔層後的剖面圖。
第13B圖繪示第13A圖之銅塊形成擴散阻障層、強化層與抗氧化層後的剖面圖。
第14A圖繪示第13A圖的另一實施方式。
第14B圖繪示第14A圖之銅塊形成擴散阻障層、強化層與抗氧化層後的剖面圖。
第15圖繪示根據本發明一實施方式之被動元件結構的剖面圖，其剖面位置與第5圖相同。
第16圖繪示根據本發明一實施方式之被動元件結構與習知被動元件結構的品質係數-頻率關係圖。
以下將以圖式揭露本發明之複數個實施方式，為明確說明起見，許多實務上的細節將在以下敘述中一併說明。然而，應瞭解到，這些實務上的細節不應用以限制本發明。也就是說，在本發明部分實施方式中，這些實務上的細節是非必要的。此外，為簡化圖式起見，一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。
第1圖繪示根據本發明一實施方式之被動元件結構100的俯視圖。第2圖繪示第1圖之被動元件結構100沿線段2-2的剖面圖。為求簡潔，本文中所有剖面圖均未繪示第1圖的線路層210。同時參閱第1圖與第2圖，被動元件結構100包含基板110、保護層120、圖案化的導電層130、複數個銅塊140、擴散阻障層150與抗氧化層160。被動元件結構100可應用於電感元件、電容元件等被動元件。其中，基板110的表面具有複數個焊墊112。保護層120位於基板110與焊墊112上。保護層120具有複數個保 護層開口122。保護層開口122分別與焊墊112位置對應。導電層130位於焊墊112與保護層120緊鄰保護層開口122的表面上。銅塊140位於導電層130上。擴散阻障層150位於銅塊140之至少一者上，在本實施方式中，擴散阻障層150位於銅塊140的頂面142上。抗氧化層160覆蓋於擴散阻障層150。
此外，被動元件結構100還可包含強化層170、阻隔層180與導電結構190。其中，強化層170位於擴散阻障層150與抗氧化層160之間。阻隔層180位於保護層120與銅塊140上，且阻隔層180具有阻隔層開口182。阻隔層開口182與抗氧化層160位置對應，在本實施方式中，阻隔層開口182的寬度小於銅塊140的寬度。導電結構190電性連接於抗氧化層160。擴散阻障層150、強化層170與抗氧化層160係透過化學鍍(又稱無電鍍或自身催化電鍍)的製程依序形成於銅塊140上。以化學鍍製程形成的抗氧化層160厚度薄，可介於0.01至0.1μm，強化層170可提供抗氧化層160支撐強度，避免抗氧化層160於植錫球(BGA)製程或打線(wire bond)製程中破損。
在本實施方式中，基板110的材質可以包含矽，焊墊112的材質可以包含鋁。保護層120的材質可以包含聚合物材料、氧化物(例如二氧化矽)或氮化物。導電層130的材質可以包含鈦與銅。擴散阻障層150的材質可以包含鎳，具有阻值高的特性，能防止抗氧化層160與銅塊140在高溫環境中互相熔合。抗氧化層160的材質可以包含金， 可防止銅塊140氧化。強化層170的材質可以包含鈀，可提供抗氧化層160支撐強度。阻隔層180的材質可以為防焊綠漆，可阻隔水氣與灰塵進入被動元件結構100中，避免銅塊140氧化。導電結構190可以為錫球。然而，上述材料並不以限制本發明。
被動元件結構100在植錫球製程或打線製程中，導電結構190可電性連接於抗氧化層160上，使導電結構190可透過設有擴散阻障層150、強化層170與抗氧化層160的銅塊140(如第2圖左側銅塊)電性連接導電層130與焊墊112。未設有擴散阻障層150與抗氧化層160的銅塊140(如第2圖右側銅塊)則由阻隔層180覆蓋，不用來電性連接導電結構190。如此一來，被動元件結構100可節省擴散阻障層150、強化層170與抗氧化層160的材料花費，且能降低被動元件結構100的線路總電阻值，造成效率提升，使被動元件結構100的電感品質係數得以提升。
在以下敘述中，已敘述過的元件連接關係與材料將不再重複贅述，合先敘明。
第3圖繪示根據本發明另一實施方式之被動元件結構100a的剖面圖，其剖面位置與第2圖相同。被動元件結構100a包含基板110、保護層120、圖案化的導電層130、複數個銅塊140、擴散阻障層150與抗氧化層160。與第2圖實施方式不同的地方在於：阻隔層開口182的寬度大於銅塊140的寬度。擴散阻障層150位於銅塊140的頂面142及側面144上。導電結構190a為導線。被動元件結構100a 可節省材料花費，且能降低線路總電阻值，造成效率提升，使電感品質係數得以提升。
第4圖繪示根據本發明又一實施方式之被動元件結構100b的剖面圖，其剖面位置與第2圖相同。被動元件結構100b包含基板110、保護層120、圖案化的導電層130、複數個銅塊140、擴散阻障層150與抗氧化層160。與第2圖實施方式不同的地方在於：被動元件結構100b不具有阻隔層180。被動元件結構100b可節省材料花費，且能降低線路總電阻值，造成效率提升，使電感品質係數得以提升。
第5圖繪示根據本發明再一實施方式之被動元件結構100c的剖面圖，其剖面位置與第3圖相同。被動元件結構100c包含基板110、保護層120、圖案化的導電層130、複數個銅塊140、擴散阻障層150與抗氧化層160。與第3圖實施方式不同的地方在於：被動元件結構100c不具有阻隔層180。被動元件結構100c可節省材料花費，且能降低線路總電阻值，造成效率提升，使電感品質係數得以提升。
在以下敘述中，將敘述上述被動元件結構100、100a、100b、100c之製造方法。
第6圖繪示根據本發明一實施方式之被動元件結構的製作方法的流程圖。首先在步驟S1中，提供具有複數個焊墊的基板。接著在步驟S2中，形成保護層於基板上，且焊墊分別由保護層的複數個保護層開口露出。之後在步驟S3中，形成導電層於焊墊與保護層上。接著在步驟S4中，形成圖案化的光阻層於導電層上，且緊鄰保護層開口 的導電層由光阻層的複數個光阻層開口露出。接著在步驟S5中，分別電鍍複數個銅塊於光阻層開口中的導電層上。之後在步驟S6中，去除光阻層與未被銅塊覆蓋的導電層。接著在步驟S7中，形成阻隔層於銅塊與保護層上，其中銅塊的至少一者由阻隔層的阻隔層開口露出。最後在步驟S8中，依序化學鍍擴散阻障層與抗氧化層於露出阻隔層開口的銅塊上。
第7圖繪示第6圖之焊墊112分別由保護層開口122露出後的剖面圖。首先，提供具有複數個焊墊112的基板110，並於基板110與焊墊112上形成具有複數個保護層開口122的保護層120，使焊墊112分別由保護層開口122露出。保護層120可透過圖案化製程，使保護層120具有與焊墊112位置對應的保護層開口122。圖案化製程可包含曝光、顯影與蝕刻製程。
第8圖繪示第7圖之焊墊112與保護層120形成導電層130後的剖面圖。同時參閱第7圖與第8圖，待焊墊112分別由保護層開口122露出後，導電層130可透過濺鍍(sputter)的方式形成於焊墊112與保護層120上。
第9圖繪示第8圖之導電層130形成圖案化的光阻層220後的剖面圖。同時參閱第7圖與第8圖，待導電層130形成於焊墊112與保護層120上後，可於導電層130上形成圖案化的光阻層220，使緊鄰保護層開口122的導電層130由光阻層220的複數個光阻層開口222露出。
第10圖繪示第9圖之光阻層開口222中的導電層 130形成銅塊140後的剖面圖。同時參閱第9圖與第10圖，待導電層130上形成圖案化的光阻層220後，可於光阻層開口222中的導電層130分別形成銅塊140。其中，銅塊140係利用電鍍的方式形成於光阻層開口222中的導電層130上。
第11圖繪示第10圖之光阻層220與未被銅塊140覆蓋的導電層130去除後的剖面圖。同時參閱第10圖與第11圖，待銅塊140電鍍於導電層130上後，便可去除光阻層220與未被銅塊140覆蓋的導電層130。其中，未被銅塊140覆蓋的導電層130可利用蝕刻製程去除。
第12A圖繪示第11圖之銅塊140與保護層120形成阻隔層180後的剖面圖。阻隔層180具有阻隔層開口182，使銅塊140的至少一者由阻隔層開口182露出。在本實施方式中，阻隔層180的材質為防焊綠漆。
同時參閱第12A圖與第2圖，待阻隔層180形成於銅塊140與保護層120後，可依序化學鍍擴散阻障層150、強化層170與抗氧化層160於露出阻隔層開口182的銅塊140上。在本實施方式中，由於阻隔層開口182的寬度小於銅塊140的寬度，因此擴散阻障層150、強化層170與抗氧化層160會形成於銅塊140的頂面142。待抗氧化層160形成後，便可電性連接導電結構190，而得到第2圖之被動元件結構100。
第12B圖繪示第12A圖的另一實施方式。同時參閱第12B圖與第3圖，待阻隔層180形成於銅塊140與保 護層120後，可依序化學鍍擴散阻障層150、強化層170與抗氧化層160於露出阻隔層開口182的銅塊140上。在本實施方式中，由於阻隔層開口182的寬度大於銅塊140的寬度，因此擴散阻障層150、強化層170與抗氧化層160會形成於銅塊140的頂面142及側面144。待抗氧化層160形成後，便可將導電結構190a電性連接於抗氧化層160上，而得到第3圖之被動元件結構100a。
第13A圖繪示第11圖之銅塊140與保護層120形成阻隔層180a後的剖面圖。第13B圖繪示第13A圖之銅塊140形成擴散阻障層150、強化層170與抗氧化層160後的剖面圖。同時參閱第13A圖與第13B圖，在本實施方式中，阻隔層180a的材質為光阻，待阻隔層180a形成於銅塊140與保護層120後，可依序化學鍍擴散阻障層150、強化層170與抗氧化層160於露出阻隔層開口182的銅塊140上。在本實施方式中，由於阻隔層開口182的寬度大致等於銅塊140的寬度，因此擴散阻障層150、強化層170與抗氧化層160會形成於銅塊140的頂面142。
同時參閱第13B圖與第4圖，待抗氧化層160形成後，便可去除阻隔層180a，並將導電結構190電性連接於抗氧化層160上，而得到第4圖之被動元件結構100b。
第14A圖繪示第13A圖的另一實施方式。第14B圖繪示第14A圖之銅塊140形成擴散阻障層150、強化層170與抗氧化層160後的剖面圖。同時參閱第14A圖與第14B圖，在本實施方式中，阻隔層180a的材質為光阻，待 阻隔層180a形成於銅塊140與保護層120後，可依序化學鍍擴散阻障層150、強化層170與抗氧化層160於露出阻隔層開口182的銅塊140上。在本實施方式中，由於阻隔層開口182的寬度大於銅塊140的寬度，因此擴散阻障層150、強化層170與抗氧化層160會形成於銅塊140的頂面142與側面144。
同時參閱第14B圖與第5圖，待抗氧化層160形成後，便可去除阻隔層180a，並將導電結構190a電性連接於抗氧化層160上，而得到第5圖之被動元件結構100c。
第15圖繪示根據本發明一實施方式之被動元件結構100d的剖面圖，其剖面位置與第5圖相同。被動元件結構100d包含基板110、保護層120、圖案化的導電層130、複數個銅塊140與抗氧化層160。與第5圖實施方式不同的地方在於：被動元件結構100d不具第5圖的擴散阻障層150與強化層170，抗氧化層160是直接位於銅塊140的至少一者上。抗氧化層160的材質可以包含金，可保護銅塊140避免氧化。此外，被動元件結構100d還包含例如錫球的導電結構190。導電結構190電性連接於抗氧化層160。
被動元件結構100d的製作方法與第6圖實施方式不同的地方在於：待去除光阻層220(見第10圖)與未被銅塊140覆蓋的導電層130後，可從第11圖的結構選擇性化學鍍抗氧化層160於銅塊140的至少一者上。
第16圖繪示根據本發明一實施方式之被動元件結構與習知被動元件結構的品質係數-頻率關係圖。折線L1 為本發明被動元件結構(例如前述被動元件結構100~100d)之電感品質係數與頻率關係，也就是僅部分銅塊的表面具有金屬層。折線L2為習知被動元件結構之電感品質係數與頻率關係，也就是所有銅塊的表面均具有金屬層。由第16圖可知，本發明被動元件結構的電感品質係數高於習知被動元件結構的電感品質係數。
與習知技術相較，被動元件結構及其製作方法可選擇性地在銅塊上形成擴散阻障層與抗氧化層，讓在後續製程(例如植錫球製程或打線製程)需電性連接錫球或導線的銅塊才形成擴散阻障層及抗氧化層，其它銅塊則不形成擴散阻障層及抗氧化層。此外，抗氧化層係以化學鍍製程形成於銅塊上，因此抗氧化層的厚度可較習知以電鍍形成之抗氧化層的厚度薄。如此一來，被動元件結構及其製作方法不僅可節省擴散阻障層與抗氧化層的材料花費，且能降低被動元件結構的線路總電阻值，造成效率提升，使被動元件結構的電感品質係數得以提升。
雖然本發明已以實施方式揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
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Claims (20)

  1. 一種被動元件結構，包含：一基板，具有複數個焊墊；一保護層，位於該基板與該些焊墊上，該保護層具有複數個保護層開口，該些保護層開口分別與該些焊墊位置對應；一圖案化的導電層，位於該些焊墊與該保護層緊鄰該些保護層開口的表面上；複數個銅塊，位於該導電層上，每一該些銅塊具有背對該導電層的一頂面與位在該頂面與該導電層之間的一側壁；一擴散阻障層，選擇性地位於該些銅塊上，其中只有一選擇數量的該些銅塊其上具有該擴散阻障層，其餘該些銅塊其上不具該擴散阻障層；該擴散阻障層為一平面結構或一蓋體結構；當該擴散阻障層為該平面結構時，該擴散阻障層只位在該選擇數量的該些銅塊上的該些頂面；當該擴散阻障層為該蓋體結構時，該擴散阻障層完全覆蓋該選擇數量的該些銅塊上的該些頂面與該些側壁；以及一抗氧化層，覆蓋於該擴散阻障層。
  2. 如請求項1所述之被動元件結構，更包含：一阻隔層，位於該保護層與該些銅塊上，且該阻隔層具有一阻隔層開口，該阻隔層開口與該抗氧化層位置對應。
  3. 如請求項1所述之被動元件結構，更包含：一強化層，位於該擴散阻障層與該抗氧化層之間。
  4. 如請求項3所述之被動元件結構，其中該強化層的材質包含鈀。
  5. 如請求項1所述之被動元件結構，其中該擴散阻障層的材質包含鎳。
  6. 如請求項1所述之被動元件結構，其中該抗氧化層的材質包含金。
  7. 如請求項1所述之被動元件結構，其中該抗氧化層的厚度介於0.01至0.1μm。
  8. 如請求項1所述之被動元件結構，更包含：一導電結構，電性連接於該抗氧化層。
  9. 如請求項8所述之被動元件結構，其中該導電結構包含錫球或導線。
  10. 一種被動元件結構的製作方法，包含下列步驟：(a)提供具有複數個焊墊的一基板；(b)形成一保護層於該基板上，且該些焊墊分別由該 些保護層的複數個保護層開口露出；(c)形成一導電層於該些焊墊與該保護層上；(d)形成一圖案化的光阻層於該導電層上，且緊鄰該些保護層開口的該導電層由該光阻層的複數個光阻層開口露出；(e)分別電鍍複數個銅塊於該些光阻層開口中的該導電層上，每一該些銅塊具有背對該導電層的一頂面與位在該頂面與該導電層之間的一側壁；(f)去除該光阻層與未被該些銅塊覆蓋的該導電層；(g)形成一阻隔層於該些銅塊與該保護層上，其中該些銅塊的至少一者由該阻隔層的一阻隔層開口露出；以及(h)依序化學鍍一擴散阻障層與一抗氧化層於露出該阻隔層開口的該銅塊上，使該擴散阻障層與該抗氧化層選擇性地位於該些銅塊上，其中只有一選擇數量的該些銅塊其上具有該擴散阻障層與該抗氧化層，其餘該些銅塊其上不具該擴散阻障層與該抗氧化層；該擴散阻障層為一平面結構或一蓋體結構；當該擴散阻障層為該平面結構時，該擴散阻障層只位在該選擇數量的該些銅塊上的該些頂面；當該擴散阻障層為該蓋體結構時，該擴散阻障層完全覆蓋該選擇數量的該些銅塊上的該些頂面與該些側壁。
  11. 如請求項10所述之被動元件結構的製作方法，其中該步驟(h)更包含：化學鍍一強化層於該擴散阻障層上。
  12. 如請求項10所述之被動元件結構的製作方法，其中該步驟(f)包含：蝕刻未被該些銅塊覆蓋的該導電層。
  13. 如請求項10所述之被動元件結構的製作方法，其中該阻隔層的材質為防焊綠漆。
  14. 如請求項10所述之被動元件結構的製作方法，其中該阻隔層的材質為光阻，該被動元件結構的製作方法更包含：去除該阻隔層。
  15. 如請求項10所述之被動元件結構的製作方法，其中該步驟(b)包含：圖案化該保護層，使該保護層具有該些保護層開口。
  16. 一種被動元件結構，包含：一基板，具有複數個焊墊；一保護層，位於該基板與該些焊墊上，該保護層具有複數個保護層開口，該些保護層開口分別與該些焊墊位置對應；一圖案化的導電層，位於該些焊墊與該保護層緊鄰該些保護層開口的表面上； 複數個銅塊，位於該導電層上，每一該些銅塊具有背對該導電層的一頂面與位在該頂面與該導電層之間的一側壁；以及一抗氧化層，選擇性地位於該些銅塊上，其中只有一選擇數量的該些銅塊其上具有該抗氧化層，其餘該些銅塊其上不具該抗氧化層；該抗氧化層完全覆蓋該選擇數量的該些銅塊上的該些頂面與該些側壁。
  17. 如請求項16所述之被動元件結構，其中該抗氧化層的材質包含金。
  18. 如請求項16所述之被動元件結構，更包含：一導電結構，電性連接於該抗氧化層。
  19. 如請求項18所述之被動元件結構，其中該導電結構包含錫球。
  20. 一種被動元件結構的製作方法，包含下列步驟：提供具有複數個焊墊的一基板；形成一保護層於該基板上，且該些焊墊分別由該些保護層的複數個保護層開口露出；形成一導電層於該些焊墊與該保護層上；形成一圖案化的光阻層於該導電層上，且緊鄰該些保護層開口的該導電層由該光阻層的複數個光阻層開口露 出；分別電鍍複數個銅塊於該些光阻層開口中的該導電層上，每一該些銅塊具有背對該導電層的一頂面與位在該頂面與該導電層之間的一側壁；去除該光阻層與未被該些銅塊覆蓋的該導電層；以及化學鍍一抗氧化層於該些銅塊的至少一者上，使該抗氧化層選擇性地位於該些銅塊上，其中只有一選擇數量的該些銅塊其上具有該抗氧化層，其餘該些銅塊其上不具該抗氧化層；該抗氧化層完全覆蓋該選擇數量的該些銅塊上的該些頂面與該些側壁。
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