TWI568539B - 研磨裝置及研磨方法 - Google Patents

研磨裝置及研磨方法 Download PDF

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Publication number
TWI568539B
TWI568539B TW103137162A TW103137162A TWI568539B TW I568539 B TWI568539 B TW I568539B TW 103137162 A TW103137162 A TW 103137162A TW 103137162 A TW103137162 A TW 103137162A TW I568539 B TWI568539 B TW I568539B
Authority
TW
Taiwan
Prior art keywords
polishing
substrate
vibration component
table motor
polishing pad
Prior art date
Application number
TW103137162A
Other languages
English (en)
Chinese (zh)
Other versions
TW201527045A (zh
Inventor
高橋太郎
鈴木佑多
Original Assignee
荏原製作所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 荏原製作所股份有限公司 filed Critical 荏原製作所股份有限公司
Publication of TW201527045A publication Critical patent/TW201527045A/zh
Application granted granted Critical
Publication of TWI568539B publication Critical patent/TWI568539B/zh

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
    • B24B49/105—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means using eddy currents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/047—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to foundation plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0472—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Manufacturing & Machinery (AREA)
TW103137162A 2013-11-01 2014-10-28 研磨裝置及研磨方法 TWI568539B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013228240A JP6030041B2 (ja) 2013-11-01 2013-11-01 研磨装置および研磨方法

Publications (2)

Publication Number Publication Date
TW201527045A TW201527045A (zh) 2015-07-16
TWI568539B true TWI568539B (zh) 2017-02-01

Family

ID=53007324

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103137162A TWI568539B (zh) 2013-11-01 2014-10-28 研磨裝置及研磨方法

Country Status (6)

Country Link
US (1) US9272389B2 (https=)
JP (1) JP6030041B2 (https=)
KR (2) KR101711259B1 (https=)
CN (1) CN104608055B (https=)
SG (1) SG10201407062PA (https=)
TW (1) TWI568539B (https=)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130017762A1 (en) * 2011-07-15 2013-01-17 Infineon Technologies Ag Method and Apparatus for Determining a Measure of a Thickness of a Polishing Pad of a Polishing Machine
KR102388170B1 (ko) * 2014-09-02 2022-04-19 가부시키가이샤 에바라 세이사꾸쇼 종점 검출 방법, 연마 장치 및 연마 방법
TWI547348B (zh) * 2015-08-31 2016-09-01 力晶科技股份有限公司 化學機械研磨裝置與方法
US10744617B2 (en) * 2015-10-16 2020-08-18 Ebara Corporation Polishing endpoint detection method
JP6775354B2 (ja) 2015-10-16 2020-10-28 株式会社荏原製作所 研磨装置、及び、研磨方法
JP7312103B2 (ja) * 2016-09-15 2023-07-20 アプライド マテリアルズ インコーポレイテッド 化学機械研磨スマートリング
JP6357260B2 (ja) 2016-09-30 2018-07-11 株式会社荏原製作所 研磨装置、及び研磨方法
CN108621033B (zh) * 2017-03-21 2020-04-07 中芯国际集成电路制造(上海)有限公司 研磨垫的研磨方法
TWI816620B (zh) 2017-04-21 2023-09-21 美商應用材料股份有限公司 使用神經網路來監測的拋光裝置
KR101955274B1 (ko) * 2017-04-24 2019-03-08 서우테크놀로지 주식회사 반도체 패키지 그라인더
CN109202719B (zh) * 2017-07-03 2021-02-02 株式会社安川电机 研磨工艺的控制方法
JP7098311B2 (ja) * 2017-12-05 2022-07-11 株式会社荏原製作所 研磨装置、及び研磨方法
WO2019177842A1 (en) * 2018-03-12 2019-09-19 Applied Materials, Inc. Filtering during in-situ monitoring of polishing
TWI825075B (zh) 2018-04-03 2023-12-11 美商應用材料股份有限公司 針對墊子厚度使用機器學習及補償的拋光裝置、拋光系統、方法及電腦儲存媒體
CN108555771A (zh) * 2018-04-25 2018-09-21 清华大学 Cmp设备的终点确定方法、终点确定系统和cmp系统
CN108807228B (zh) * 2018-06-05 2020-10-16 安徽省华腾农业科技有限公司经开区分公司 一种半导体芯片生产工艺
KR102570975B1 (ko) * 2018-06-18 2023-08-28 주식회사 케이씨텍 금속 박막 두께 검출 장치 및 그 방법
TWI828706B (zh) 2018-06-20 2024-01-11 美商應用材料股份有限公司 用於原位電磁感應監控的基板摻雜補償的方法、電腦程式產品及研磨系統
JP7084811B2 (ja) * 2018-07-13 2022-06-15 株式会社荏原製作所 研磨装置および研磨方法
CN118943037A (zh) 2018-09-26 2024-11-12 应用材料公司 针对原位电磁感应监测的边缘重建中的基板掺杂的补偿
CN109531424B (zh) * 2019-01-09 2024-04-09 中国工程物理研究院激光聚变研究中心 抛光盘包络式修整方法及其装置
JP7374710B2 (ja) * 2019-10-25 2023-11-07 株式会社荏原製作所 研磨方法および研磨装置
KR20250073489A (ko) 2020-05-14 2025-05-27 어플라이드 머티어리얼스, 인코포레이티드 연마 동안의 인-시튜 모니터링에 사용하기 위한 신경망을 훈련시키기 위한 기법 및 연마 시스템
JP7447284B2 (ja) 2020-06-24 2024-03-11 アプライド マテリアルズ インコーポレイテッド 研磨パッドの摩耗補償による基板層の厚さの決定
JP7421460B2 (ja) * 2020-09-29 2024-01-24 株式会社荏原製作所 研磨装置、および研磨パッドの交換時期を決定する方法
US11794302B2 (en) 2020-12-15 2023-10-24 Applied Materials, Inc. Compensation for slurry composition in in-situ electromagnetic inductive monitoring
JP7667025B2 (ja) * 2021-08-06 2025-04-22 株式会社荏原製作所 研磨装置および研磨装置における研磨終点検出方法
CN114121646B (zh) * 2021-11-29 2025-01-28 上海华力集成电路制造有限公司 一种抛光方法、装置、存储介质、模组及机台
US20230321696A1 (en) * 2022-04-07 2023-10-12 Ebara Corporation Substrate processing system and substrate processing method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5876265A (en) * 1995-04-26 1999-03-02 Fujitsu Limited End point polishing apparatus and polishing method
US7097535B2 (en) * 2001-04-02 2006-08-29 Infineon Technologies Ag Method and configuration for conditioning a polishing pad surface
TW201221296A (en) * 2010-09-09 2012-06-01 Ebara Corp Polishing apparatus
TW201314758A (zh) * 2011-08-09 2013-04-01 荏原製作所股份有限公司 研磨監視方法、研磨終點檢測方法及研磨裝置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10202513A (ja) * 1997-01-22 1998-08-04 Ebara Corp ポリッシングの終点検知方法
JP2001018161A (ja) * 1999-07-07 2001-01-23 Ebara Corp 研磨装置
JP2001079752A (ja) * 1999-09-08 2001-03-27 Hitachi Ltd 化学的機械研磨装置およびこれを用いた半導体集積回路装置の製造方法
JP2001198813A (ja) 2000-01-13 2001-07-24 Toshiba Corp 研磨装置及びその研磨方法
JP2001219354A (ja) * 2000-02-04 2001-08-14 Kawasaki Heavy Ind Ltd 研磨システム
US6797623B2 (en) * 2000-03-09 2004-09-28 Sony Corporation Methods of producing and polishing semiconductor device and polishing apparatus
US6878038B2 (en) * 2000-07-10 2005-04-12 Applied Materials Inc. Combined eddy current sensing and optical monitoring for chemical mechanical polishing
JP2003037090A (ja) 2001-07-24 2003-02-07 Hitachi Ltd 半導体集積回路装置の製造方法
US20040011462A1 (en) * 2002-06-28 2004-01-22 Lam Research Corporation Method and apparatus for applying differential removal rates to a surface of a substrate
US6945845B2 (en) * 2003-03-04 2005-09-20 Applied Materials, Inc. Chemical mechanical polishing apparatus with non-conductive elements
US7311004B2 (en) * 2003-03-10 2007-12-25 Capstan Ag Systems, Inc. Flow control and operation monitoring system for individual spray nozzles
JP4451111B2 (ja) * 2003-10-20 2010-04-14 株式会社荏原製作所 渦電流センサ
JP4202365B2 (ja) * 2006-03-07 2008-12-24 ファナック株式会社 力制御装置
JP4790475B2 (ja) * 2006-04-05 2011-10-12 株式会社荏原製作所 研磨装置、研磨方法、および基板の膜厚測定プログラム
JP2009028856A (ja) * 2007-07-27 2009-02-12 Tokyo Seimitsu Co Ltd トルク変化を利用した研磨終端時点検知方法及びその装置
JP5052413B2 (ja) 2008-05-27 2012-10-17 株式会社荏原製作所 基板観察装置及び基板研磨装置
US8388408B2 (en) 2008-10-10 2013-03-05 Ebara Corporation Method of making diagram for use in selection of wavelength of light for polishing endpoint detection, method for selecting wavelength of light for polishing endpoint detection, and polishing endpoint detection method
JP2011000647A (ja) 2009-06-16 2011-01-06 Ebara Corp 研磨監視方法
US20100120331A1 (en) * 2008-11-07 2010-05-13 Applied Materials, Inc. Endpoint control of multiple-wafer chemical mechanical polishing
JP5236596B2 (ja) * 2009-08-19 2013-07-17 ファナック株式会社 加工ロボットシステム

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5876265A (en) * 1995-04-26 1999-03-02 Fujitsu Limited End point polishing apparatus and polishing method
US7097535B2 (en) * 2001-04-02 2006-08-29 Infineon Technologies Ag Method and configuration for conditioning a polishing pad surface
TW201221296A (en) * 2010-09-09 2012-06-01 Ebara Corp Polishing apparatus
TW201314758A (zh) * 2011-08-09 2013-04-01 荏原製作所股份有限公司 研磨監視方法、研磨終點檢測方法及研磨裝置

Also Published As

Publication number Publication date
TW201527045A (zh) 2015-07-16
KR20150051150A (ko) 2015-05-11
KR20170015406A (ko) 2017-02-08
US9272389B2 (en) 2016-03-01
KR101711259B1 (ko) 2017-02-28
CN104608055B (zh) 2017-09-22
JP2015085487A (ja) 2015-05-07
JP6030041B2 (ja) 2016-11-24
SG10201407062PA (en) 2015-06-29
CN104608055A (zh) 2015-05-13
KR101901508B1 (ko) 2018-09-21
US20150125971A1 (en) 2015-05-07

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