KR101711259B1 - 연마 장치 및 연마 방법 - Google Patents

연마 장치 및 연마 방법 Download PDF

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Publication number
KR101711259B1
KR101711259B1 KR1020140147073A KR20140147073A KR101711259B1 KR 101711259 B1 KR101711259 B1 KR 101711259B1 KR 1020140147073 A KR1020140147073 A KR 1020140147073A KR 20140147073 A KR20140147073 A KR 20140147073A KR 101711259 B1 KR101711259 B1 KR 101711259B1
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South Korea
Prior art keywords
polishing
substrate
film thickness
wafer
vibration component
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Korean (ko)
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KR20150051150A (ko
Inventor
다로 다카하시
유타 스즈키
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가부시키가이샤 에바라 세이사꾸쇼
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
    • B24B49/105—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means using eddy currents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/047—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to foundation plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0472—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Manufacturing & Machinery (AREA)
KR1020140147073A 2013-11-01 2014-10-28 연마 장치 및 연마 방법 Active KR101711259B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-228240 2013-11-01
JP2013228240A JP6030041B2 (ja) 2013-11-01 2013-11-01 研磨装置および研磨方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020170010910A Division KR101901508B1 (ko) 2013-11-01 2017-01-24 연마 장치 및 연마 방법

Publications (2)

Publication Number Publication Date
KR20150051150A KR20150051150A (ko) 2015-05-11
KR101711259B1 true KR101711259B1 (ko) 2017-02-28

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KR1020140147073A Active KR101711259B1 (ko) 2013-11-01 2014-10-28 연마 장치 및 연마 방법
KR1020170010910A Active KR101901508B1 (ko) 2013-11-01 2017-01-24 연마 장치 및 연마 방법

Family Applications After (1)

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Country Status (6)

Country Link
US (1) US9272389B2 (https=)
JP (1) JP6030041B2 (https=)
KR (2) KR101711259B1 (https=)
CN (1) CN104608055B (https=)
SG (1) SG10201407062PA (https=)
TW (1) TWI568539B (https=)

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KR102388170B1 (ko) * 2014-09-02 2022-04-19 가부시키가이샤 에바라 세이사꾸쇼 종점 검출 방법, 연마 장치 및 연마 방법
TWI547348B (zh) * 2015-08-31 2016-09-01 力晶科技股份有限公司 化學機械研磨裝置與方法
US10744617B2 (en) * 2015-10-16 2020-08-18 Ebara Corporation Polishing endpoint detection method
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JP6357260B2 (ja) 2016-09-30 2018-07-11 株式会社荏原製作所 研磨装置、及び研磨方法
CN108621033B (zh) * 2017-03-21 2020-04-07 中芯国际集成电路制造(上海)有限公司 研磨垫的研磨方法
TWI816620B (zh) 2017-04-21 2023-09-21 美商應用材料股份有限公司 使用神經網路來監測的拋光裝置
KR101955274B1 (ko) * 2017-04-24 2019-03-08 서우테크놀로지 주식회사 반도체 패키지 그라인더
CN109202719B (zh) * 2017-07-03 2021-02-02 株式会社安川电机 研磨工艺的控制方法
JP7098311B2 (ja) * 2017-12-05 2022-07-11 株式会社荏原製作所 研磨装置、及び研磨方法
WO2019177842A1 (en) * 2018-03-12 2019-09-19 Applied Materials, Inc. Filtering during in-situ monitoring of polishing
TWI825075B (zh) 2018-04-03 2023-12-11 美商應用材料股份有限公司 針對墊子厚度使用機器學習及補償的拋光裝置、拋光系統、方法及電腦儲存媒體
CN108555771A (zh) * 2018-04-25 2018-09-21 清华大学 Cmp设备的终点确定方法、终点确定系统和cmp系统
CN108807228B (zh) * 2018-06-05 2020-10-16 安徽省华腾农业科技有限公司经开区分公司 一种半导体芯片生产工艺
KR102570975B1 (ko) * 2018-06-18 2023-08-28 주식회사 케이씨텍 금속 박막 두께 검출 장치 및 그 방법
TWI828706B (zh) 2018-06-20 2024-01-11 美商應用材料股份有限公司 用於原位電磁感應監控的基板摻雜補償的方法、電腦程式產品及研磨系統
CN118943037A (zh) 2018-09-26 2024-11-12 应用材料公司 针对原位电磁感应监测的边缘重建中的基板掺杂的补偿
CN109531424B (zh) * 2019-01-09 2024-04-09 中国工程物理研究院激光聚变研究中心 抛光盘包络式修整方法及其装置
JP7374710B2 (ja) * 2019-10-25 2023-11-07 株式会社荏原製作所 研磨方法および研磨装置
KR20250073489A (ko) 2020-05-14 2025-05-27 어플라이드 머티어리얼스, 인코포레이티드 연마 동안의 인-시튜 모니터링에 사용하기 위한 신경망을 훈련시키기 위한 기법 및 연마 시스템
JP7447284B2 (ja) 2020-06-24 2024-03-11 アプライド マテリアルズ インコーポレイテッド 研磨パッドの摩耗補償による基板層の厚さの決定
JP7421460B2 (ja) * 2020-09-29 2024-01-24 株式会社荏原製作所 研磨装置、および研磨パッドの交換時期を決定する方法
US11794302B2 (en) 2020-12-15 2023-10-24 Applied Materials, Inc. Compensation for slurry composition in in-situ electromagnetic inductive monitoring
JP7667025B2 (ja) * 2021-08-06 2025-04-22 株式会社荏原製作所 研磨装置および研磨装置における研磨終点検出方法
CN114121646B (zh) * 2021-11-29 2025-01-28 上海华力集成电路制造有限公司 一种抛光方法、装置、存储介质、模组及机台
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JP2009028856A (ja) * 2007-07-27 2009-02-12 Tokyo Seimitsu Co Ltd トルク変化を利用した研磨終端時点検知方法及びその装置

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US20200016720A1 (en) * 2018-07-13 2020-01-16 Ebara Corporation Polishing apparatus and polishing method
US12528150B2 (en) * 2018-07-13 2026-01-20 Ebara Corporation Polishing apparatus and polishing method

Also Published As

Publication number Publication date
TW201527045A (zh) 2015-07-16
KR20150051150A (ko) 2015-05-11
KR20170015406A (ko) 2017-02-08
US9272389B2 (en) 2016-03-01
CN104608055B (zh) 2017-09-22
JP2015085487A (ja) 2015-05-07
JP6030041B2 (ja) 2016-11-24
SG10201407062PA (en) 2015-06-29
TWI568539B (zh) 2017-02-01
CN104608055A (zh) 2015-05-13
KR101901508B1 (ko) 2018-09-21
US20150125971A1 (en) 2015-05-07

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