TWI567214B - A method for forming a nitride semiconductor layer, and a method of manufacturing the semiconductor device - Google Patents
A method for forming a nitride semiconductor layer, and a method of manufacturing the semiconductor device Download PDFInfo
- Publication number
- TWI567214B TWI567214B TW104122947A TW104122947A TWI567214B TW I567214 B TWI567214 B TW I567214B TW 104122947 A TW104122947 A TW 104122947A TW 104122947 A TW104122947 A TW 104122947A TW I567214 B TWI567214 B TW I567214B
- Authority
- TW
- Taiwan
- Prior art keywords
- nitride semiconductor
- layer
- gan
- substrate
- buffer layer
- Prior art date
Links
- 150000004767 nitrides Chemical class 0.000 title claims description 156
- 239000004065 semiconductor Substances 0.000 title claims description 129
- 238000000034 method Methods 0.000 title claims description 102
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 136
- 239000000758 substrate Substances 0.000 claims description 126
- 239000007789 gas Substances 0.000 claims description 88
- 229910052751 metal Inorganic materials 0.000 claims description 39
- 239000002184 metal Substances 0.000 claims description 39
- 230000012010 growth Effects 0.000 claims description 24
- 238000012545 processing Methods 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 14
- 229910002704 AlGaN Inorganic materials 0.000 claims description 13
- 229910052594 sapphire Inorganic materials 0.000 claims description 8
- 239000010980 sapphire Substances 0.000 claims description 8
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 396
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 224
- 229910002601 GaN Inorganic materials 0.000 description 223
- 239000010408 film Substances 0.000 description 108
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 63
- 230000015572 biosynthetic process Effects 0.000 description 45
- 230000000052 comparative effect Effects 0.000 description 24
- 238000012546 transfer Methods 0.000 description 23
- 230000007246 mechanism Effects 0.000 description 19
- 238000010438 heat treatment Methods 0.000 description 16
- 239000002245 particle Substances 0.000 description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 239000000203 mixture Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 150000003254 radicals Chemical class 0.000 description 8
- 238000003917 TEM image Methods 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 230000003068 static effect Effects 0.000 description 6
- 229910052732 germanium Inorganic materials 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 230000005012 migration Effects 0.000 description 5
- 238000013508 migration Methods 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052748 manganese Inorganic materials 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 229910018229 Al—Ga Inorganic materials 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 230000001771 impaired effect Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000007781 pre-processing Methods 0.000 description 2
- 238000002203 pretreatment Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/08—Epitaxial-layer growth by condensing ionised vapours
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014147964 | 2014-07-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201614083A TW201614083A (en) | 2016-04-16 |
| TWI567214B true TWI567214B (zh) | 2017-01-21 |
Family
ID=55078092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104122947A TWI567214B (zh) | 2014-07-18 | 2015-07-15 | A method for forming a nitride semiconductor layer, and a method of manufacturing the semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6001194B2 (ja) |
| KR (1) | KR101687595B1 (ja) |
| TW (1) | TWI567214B (ja) |
| WO (1) | WO2016009577A1 (ja) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107429383B (zh) | 2015-03-30 | 2020-07-24 | 东曹株式会社 | 氮化镓系烧结体和其制造方法 |
| JP6588349B2 (ja) * | 2016-01-26 | 2019-10-09 | ヤマト科学株式会社 | 封じ込めシステム |
| EP3464689A4 (en) * | 2016-05-26 | 2020-07-22 | Robbie Jorgenson | SYSTEM AND METHOD FOR GROWING GROUP IIIA NITRIDE |
| TWI825187B (zh) * | 2018-10-09 | 2023-12-11 | 日商東京威力科創股份有限公司 | 氮化物半導體膜之形成方法 |
| US20230143194A1 (en) * | 2020-03-30 | 2023-05-11 | Tosoh Corporation | Laminated film, structure including laminated film, semiconductor element, electronic device, and method for producing laminated film |
| DE112021004352T5 (de) * | 2020-09-29 | 2023-06-01 | Shibaura Mechatronics Corp. | Filmausbildungsvorrichtung und filmausbildungsverfahren |
| JPWO2022176422A1 (ja) * | 2021-02-19 | 2022-08-25 | ||
| KR102690550B1 (ko) * | 2021-07-13 | 2024-07-31 | (재)한국나노기술원 | 질화갈륨계 반도체 구조물 및 이의 제조 방법 |
| WO2023218840A1 (ja) * | 2022-05-10 | 2023-11-16 | 株式会社ジャパンディスプレイ | 成膜装置および窒化ガリウム膜の成膜方法 |
| WO2024084664A1 (ja) * | 2022-10-20 | 2024-04-25 | 京セラ株式会社 | 半導体基板、テンプレート基板、並びにテンプレート基板の製造方法および製造装置 |
| WO2024209900A1 (ja) * | 2023-04-04 | 2024-10-10 | 株式会社ジャパンディスプレイ | 成膜装置および窒化ガリウム膜の成膜方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001035805A (ja) * | 1999-07-19 | 2001-02-09 | Sony Corp | Ｉｉｉ族ナイトライド化合物半導体薄膜およびその形成方法、並びに半導体素子およびその製造方法 |
| CN1344037A (zh) * | 2000-05-22 | 2002-04-10 | 日本碍子株式会社 | 发光器件、用于制造发光器件的衬底、以及它们的制造方法 |
| TW201205872A (en) * | 2010-04-30 | 2012-02-01 | Canon Anelva Corp | Epitaxial film formation method, vacuum treatment device, method for producing semiconductor light-emitting element, semiconductor light-emitting element, lighting device |
| JP2014091852A (ja) * | 2012-11-02 | 2014-05-19 | Tosoh Corp | 窒化ガリウムターゲット |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4131618B2 (ja) * | 2000-05-22 | 2008-08-13 | 日本碍子株式会社 | フォトニックデバイス用基板の製造方法 |
| JP4974635B2 (ja) | 2006-10-06 | 2012-07-11 | 昭和電工株式会社 | Ｉｉｉ族窒化物化合物半導体積層構造体の成膜方法 |
| JP2008153603A (ja) | 2006-12-20 | 2008-07-03 | Showa Denko Kk | Ｉｉｉ族窒化物化合物半導体発光素子の製造方法、及びｉｉｉ族窒化物化合物半導体発光素子、並びにランプ |
| KR101935755B1 (ko) | 2010-12-20 | 2019-01-04 | 토소가부시키가이샤 | 금속 갈륨 침투 질화갈륨 성형물 및 이의 제조방법 |
| JP2012144805A (ja) * | 2010-12-21 | 2012-08-02 | Tosoh Corp | 窒化ガリウム成形物及びその製造方法 |
| WO2012090422A1 (ja) * | 2010-12-27 | 2012-07-05 | キヤノンアネルバ株式会社 | エピタキシャル膜形成方法、スパッタリング装置、半導体発光素子の製造方法、半導体発光素子、および照明装置 |
| JP5718709B2 (ja) | 2011-04-12 | 2015-05-13 | 株式会社アルバック | 半導体層形成装置、半導体層製造方法 |
| JP2013125851A (ja) | 2011-12-14 | 2013-06-24 | Ulvac Japan Ltd | 成膜装置及び成膜方法 |
-
2015
- 2015-03-17 WO PCT/JP2015/001479 patent/WO2016009577A1/ja active Application Filing
- 2015-03-17 KR KR1020157024926A patent/KR101687595B1/ko active IP Right Grant
- 2015-03-17 JP JP2015548510A patent/JP6001194B2/ja active Active
- 2015-07-15 TW TW104122947A patent/TWI567214B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001035805A (ja) * | 1999-07-19 | 2001-02-09 | Sony Corp | Ｉｉｉ族ナイトライド化合物半導体薄膜およびその形成方法、並びに半導体素子およびその製造方法 |
| CN1344037A (zh) * | 2000-05-22 | 2002-04-10 | 日本碍子株式会社 | 发光器件、用于制造发光器件的衬底、以及它们的制造方法 |
| TW201205872A (en) * | 2010-04-30 | 2012-02-01 | Canon Anelva Corp | Epitaxial film formation method, vacuum treatment device, method for producing semiconductor light-emitting element, semiconductor light-emitting element, lighting device |
| JP2014091852A (ja) * | 2012-11-02 | 2014-05-19 | Tosoh Corp | 窒化ガリウムターゲット |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6001194B2 (ja) | 2016-10-05 |
| KR20160020401A (ko) | 2016-02-23 |
| JPWO2016009577A1 (ja) | 2017-04-27 |
| WO2016009577A1 (ja) | 2016-01-21 |
| KR101687595B1 (ko) | 2016-12-19 |
| TW201614083A (en) | 2016-04-16 |
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