TWI596710B - 半導體元件的製備方法 - Google Patents
半導體元件的製備方法 Download PDFInfo
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- TWI596710B TWI596710B TW104119118A TW104119118A TWI596710B TW I596710 B TWI596710 B TW I596710B TW 104119118 A TW104119118 A TW 104119118A TW 104119118 A TW104119118 A TW 104119118A TW I596710 B TWI596710 B TW I596710B
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- gallium nitride
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- semiconductor
- epitaxial layer
- buffer film
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- 239000004065 semiconductor Substances 0.000 title claims description 94
- 238000000034 method Methods 0.000 title claims description 37
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 125
- 229910002601 GaN Inorganic materials 0.000 claims description 121
- 239000000758 substrate Substances 0.000 claims description 72
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 51
- 238000005229 chemical vapour deposition Methods 0.000 claims description 21
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 19
- 239000013078 crystal Substances 0.000 claims description 18
- 239000001257 hydrogen Substances 0.000 claims description 17
- 229910052739 hydrogen Inorganic materials 0.000 claims description 17
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 9
- 238000005240 physical vapour deposition Methods 0.000 claims description 9
- 125000002524 organometallic group Chemical group 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 239000012159 carrier gas Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 230000000903 blocking effect Effects 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 79
- 229910052594 sapphire Inorganic materials 0.000 description 16
- 239000010980 sapphire Substances 0.000 description 16
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- 229910001195 gallium oxide Inorganic materials 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000006731 degradation reaction Methods 0.000 description 5
- 238000000879 optical micrograph Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000006911 nucleation Effects 0.000 description 4
- 238000010899 nucleation Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000002073 fluorescence micrograph Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000799 fluorescence microscopy Methods 0.000 description 1
- 238000002189 fluorescence spectrum Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000000399 optical microscopy Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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Description
本發明是有關於一種半導體元件的製備方法,特別是指一種具高品質之氮化鎵系列的半導體元件的製備方法。
含氮化鎵(GaN)的半導體化合物因具有較寬的發光能隙及高崩潰電壓等特點,而被廣泛應用於發光二極體元件等半導體裝置。
一般常使用有機金屬化學氣相沉積法(MOCVD)於藍寶石基板上成長氮化鎵薄膜,然而,藍寶石基板與氮化鎵薄膜之間存在著差異較大的晶格常數與溫度膨脹係數,使得成長於藍寶石基板上的氮化鎵薄膜容易產生晶格錯位,及因製程的升溫與降溫,使藍寶石基板與氮化鎵薄膜膨脹所產生的應力不易釋放而造成氮化鎵薄膜破裂的缺點。因此,為了磊晶成長出結晶性佳的氮化鎵薄膜,目前是使用與氮化鎵晶格常數較相近的氧化鎵(Ga2O3)基板取代藍寶石基板。
一般來說,在氫氣環境下磊晶成長氮化鎵薄膜會具有較佳的磊晶品質,然而,氧化鎵基板卻容易因氫氣
產生降解(degradation),導致無法磊晶成長連續性的氮化鎵薄膜。
因此,針對使用氧化鎵基板來說,現有的改善方法通常是先於氧化鎵基板上成長一層厚度較薄的氮化鎵晶核層(約30nm~50nm),再於該氮化鎵晶核層上磊晶成長氮化鎵薄膜,其中,該氮化鎵晶核層的厚度不宜過厚,因後續高溫磊晶成長氮化鎵薄膜時,較厚的氮化鎵晶核層表面容易出現聚集現象而產生島狀顆粒,進而影響後續氮化鎵的磊晶品質;然而,也因為上述原因,該氮化鎵晶核層會因厚度太薄的關係,無法有效防止氫氣對氧化鎵基板的降解作用。
另一種改善方法則是改用氮氣替代氫氣作為磊晶氮化鎵薄膜的成長氣體,以避免氧化鎵基板受到氫氣而產生降解作用。但相較於氫氣環境中,在氮氣環境下僅能於氧化鎵基板上磊晶成長出品質較差的立方結構(cubic structure)的氮化鎵薄膜。
因此,本發明之目的,即在提供一種能避免基板因氫氣產生降解且具有六角(hexagonal)結晶結構的氮化鎵薄膜的半導體元件的製備方法。
於是本發明半導體元件的製備方法,包含以下步驟:
(a)準備一半導體基板,該半導體基板是由包括III族元素的材料構成。
(b)對該半導體基板加熱至一介於300℃~700℃的成長溫度,並於該半導體基板上形成一緩衝單元,該緩衝單元包括一層以物理氣相沉積法(PVD)沉積於該半導體基板的表面且呈連續的氮化鋁緩衝薄膜。
(c)以化學氣相沉積法(CVD)於該緩衝單元上沉積一半導體單元,該半導體單元包括一沉積於該緩衝單元之上並具有六角結晶結構的氮化鎵磊晶層。
本發明之功效在於,以物理氣相沉積法於半導體基板上形成具有較佳的緻密性與均勻性的氮化鋁緩衝薄膜,藉由該氮化鋁緩衝薄膜防止化學氣相沉積法所使用的氫氣對該半導體基板的降解作用,還能直接於該氮化鋁緩衝薄膜上形成具有六角結晶結構的氮化鎵磊晶層。
21‧‧‧半導體基板
22‧‧‧緩衝單元
221‧‧‧氮化鋁緩衝薄膜
222‧‧‧低溫氮化鎵緩衝薄膜
23‧‧‧半導體單元
230‧‧‧氮化鎵磊晶層
231‧‧‧第一電極層
232‧‧‧應力層
233‧‧‧量子井層
234‧‧‧位障層
235‧‧‧電子阻擋層
236‧‧‧第二電極層
237‧‧‧緩衝層
238‧‧‧通道層
239‧‧‧阻障層
240‧‧‧覆蓋層
241‧‧‧電極層
242‧‧‧源極
243‧‧‧汲極
244‧‧‧閘極
本發明之其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中:圖1是一側視示意圖,說明本發明半導體元件的製備方法的一實施例的一態樣;圖2是一側視示意圖,說明本發明該實施例的另一態樣;圖3是一側視示意圖,說明本發明半導體元件的製備方法的一具體例1;圖4是一側視示意圖,說明本發明半導體元件的製備方法的一具體例2;圖5是一側視示意圖,說明本發明半導體元件的製備
方法的一具體例3與一具體例4;圖6是一光學顯微鏡(optical microscope,OM)影像圖,說明本發明該具體例1的氮化鎵磊晶層的表面形態;圖7是一螢光顯微鏡(fluorescence microscope)影像圖,說明本發明該具體例1的氮化鎵磊晶層的表面形態;圖8是一光學顯微鏡影像圖,說明一般於藍寶石基板上的氮化鎵磊晶層的表面形態;圖9是一螢光顯微鏡影像圖,說明一般於藍寶石基板上的氮化鎵磊晶層的表面形態;圖10是一光激發螢光(photo-luminescence,PL)光譜圖,說明本發明該具體例1的氮化鎵磊晶層的結晶品質;圖11是一光學顯微鏡影像圖,說明本發明該具體例5的氮化鎵磊晶層的表面形態;圖12是一螢光顯微鏡影像圖,說明本發明該具體例5的氮化鎵磊晶層的表面形態;圖13是一光學顯微鏡影像圖,說明本發明該具體例6的氮化鎵磊晶層的表面形態;圖14是一螢光顯微鏡影像圖,說明本發明該具體例6的氮化鎵磊晶層的表面形態;圖15是一光學顯微鏡影像圖,說明本發明該比較例1的氮化鎵磊晶層的表面形態;圖16是一螢光顯微鏡影像圖,說明本發明該比較例1的氮化鎵磊晶層的表面形態。
在本發明被詳細描述之前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。
<發明詳細說明>
參閱圖1,本發明半導體元件的製備方法之一實施例包含以下三個步驟:一步驟(a)、一步驟(b),及一步驟(c)。
該步驟(a)是先準備一由包括III族元素的材料構成的半導體基板21。較佳地,該半導體基板21可以是由一選自下列構成之群組的材料所製成:氧化鎵(Ga2O3)、氧化鋁(Al2O3),及氮化鎵(GaN)。
該步驟(b)是將該半導體基板21置於一第一腔體(圖未示)的一載座(圖未示)上,再對該半導體基板21加熱至一介於300℃~700℃的成長溫度,並使用物理氣相沉積法於該半導體基板21的表面沉積一層連續的氮化鋁(AlN)緩衝薄膜221,而得到一由該氮化鋁緩衝薄膜221構成的緩衝單元22。其中,本實施例的物理氣相沉積法可選自濺鍍(sputtering)或分子束磊晶(MBE)等方式。
該步驟(c)是將形成有該氮化鋁緩衝薄膜221的半導體基板21置於一第二腔體(圖未示)的一載座(圖未示)上,接著,對該半導體基板21加熱至1100℃~1200℃的成長溫度,並持續於氫氣環境下以化學氣相沉積法於該氮化鋁緩衝薄膜221上成長一層氮化鎵磊晶層230。其中,該化學氣相沉積法可選自有機金屬化學氣相沉積法(MOCVD)或氫化物氣相磊晶法(HVPE)。最後,於該氮化鎵磊晶層230
上成長一以發光二極體(LED)或高速電子遷移率場效電晶體(HEMT)的多層結構,而與該氮化鎵磊晶層230共同構成一半導體單元23。需說明的是,該半導體單元23的氮化鎵磊晶層230的形成可視後續半導體單元23的結構,而進一步地以化學氣相沉積法將碳元素或鐵元素摻雜於該氮化鎵磊晶層230中。
此處要說明的是,本實施例選用氮化鋁緩衝薄膜221作為該半導體基板21的緩衝薄膜的原因在於:氮化鋁不僅具有高硬度、高熱傳導、抗高溫,及抗化學腐蝕的物化特性之外,氮化鋁還具有與氮化鎵相接近的晶格常數,且具有六角晶體結構,因此,本實施例利用氮化鋁作為緩衝薄膜材料,並搭配物理氣相沉積過程的成長溫度(300℃~700℃)控制,而製備出緻密性佳及均勻性佳的氮化鋁緩衝薄膜221。不僅能有效防止氫氣破壞該半導體基板21,且直接於該氮化鋁緩衝薄膜221上以化學氣相沉積法磊晶成長該氮化鎵磊晶層230時,還能磊晶成長出具有六角結晶的高品質氮化鎵磊晶薄膜;此外,也因氮化鋁與氮化鎵晶格常數相近,因此,還能有效降低形成於該氮化鋁緩衝薄膜221上的氮化鎵磊晶層230的貫穿插排(threading dislocations,TDs)密度。
參閱圖2,此處值得一提的是,本實施例的該步驟(b)形成的該緩衝單元22,也可以再包含一層低溫氮化鎵(LT-GaN)緩衝薄膜222,而得到同時包含該氮化鋁緩衝薄膜221與該低溫氮化鎵緩衝薄膜222的緩衝單元22。當該步
驟(b)的該緩衝單元22為同時具有該氮化鋁緩衝薄膜221與該低溫氮化鎵緩衝薄膜222時,該步驟(c)中該半導體單元23的氮化鎵磊晶層230則是沉積於該低溫氮化鎵緩衝薄膜222上。
詳細地說,該低溫氮化鎵緩衝薄膜222是在沉積形成該氮化鋁緩衝薄膜221後,再將該半導體基板21加熱至500℃~600℃的溫度,並同時引入氫氣作為一載流氣體(carrier gas),以化學氣相沉積法於該氮化鋁緩衝薄膜221上沉積形成該低溫氮化鎵緩衝薄膜222。
由於在磊晶成長氮化鎵磊晶層230時,因為異質磊晶的過程通常會增加貫穿插排(TDs)密度,因此,於該氮化鋁緩衝薄膜221上再磊晶成長該低溫氮化鎵緩衝薄膜222,能使後續沉積於該低溫氮化鎵緩衝薄膜222的該氮化鎵磊晶層230橫向外延生長,釋放因晶格差異所產生的應力,從而降低該氮化鎵磊晶層230的貫穿排插密度,並能磊晶成長具有六角結晶結構的氮化鎵磊晶層230。再者,以低溫成長該低溫氮化鎵緩衝薄膜222能使其具有弱鍵結特性,而易於後續配合製程,自該磊晶成長用的該半導體基板21剝離(lift-off)。
另外要說明的是,於該步驟(b)所形成的氮化鋁緩衝薄膜221的厚度需大於5nm,才能確保氮化鋁緩衝薄膜221形成一層連續的薄膜,而能有效的防止氫氣對該半導體基板21的降解作用;然而,當該氮化鋁緩衝薄膜221的厚度大於100nm時,則具有不易結晶的缺點,進而會影
響後續磊晶成長該半導體單元23的品質。因此,該氮化鋁緩衝薄膜221較佳的厚度是介於5nm~100nm之間。
為了可更清楚的說明本發明半導體元件的製備方法,以下以六個具體例及一個比較例進行說明。
在本發明該等具體例中所使用的半導體基板21均須經過預清潔處理,茲將該半導體基板21的預處理過程說明如下:本發明該等具體例的半導體基板21是以β相的氧化鎵(β-Ga2O3)為例作說明。是先以丙酮(acetone)將該半導體基板21上的有機物質去除,再以去離子水(D.I.water)震洗去除殘存的丙酮,即可吹乾備用。
<具體例1>
參閱圖3,將預清潔處理完成的半導體基板21安置於一具有氮化鋁靶材的濺鍍系統中的載座上(圖未示),隨後將該半導體基板21加熱至350℃,並對該濺鍍系統抽真空,使該濺鍍系統的真空鍍維持小於10-4torr,隨後引入氮氣進行濺鍍,從而於該半導體基板21上形成厚度為25nm的該氮化鋁緩衝薄膜221。
接著,將具有該氮化鋁緩衝薄膜221的半導體基板21設置於一有機金屬化學氣相沉積系統中的載座上,以氫氣作為載流氣體並對該半導體基板21由110℃加熱至1140℃以對氮化鋁緩衝薄膜221進行退火5~10分鐘,隨後再將加熱該半導體基板21的溫度升至1160℃以於該氮化鋁緩衝薄膜221上磊晶形成氮化鎵(GaN)磊晶層230。
最後,持續於該有機金屬化學氣相沉積系統中以氫氣作為載流氣體且對該半導體基板21的加熱溫度提升至1150℃,以於該氮化鎵磊晶層230上依序磊晶形成一第一電極層231、一應力層(pre-strained layer)232、一量子井層(MQWs layer)233、一位障層(barrier layer)234、一電子阻擋層(EBL layer)235,及一第二電極層236,從而與該氮化鎵磊晶層230共同構成該半導體單元23。
其中,於該具體例1中,該半導體單元23即是以氮化銦鎵為主的發光二極體(InGaN-based LEDs)結構,因此,該第一電極層231為n-type氮化鎵(n-GaN)用以提供電子,該應力層232與該量子井層233均為氮化銦鎵/氮化鎵(InGaN/GaN)結構,用以使電子及電洞相互侷限在一起而增加整體發光強度,該位障層234為p-type氮化鋁鎵(p-AlGaN),該電子阻擋層235為p-type氮化銦鋁鎵(p-InAlGaN),該第二電極層236則為p-type氮化鎵(p-GaN),用以提供電洞之用。
<具體例2>
再配合參閱圖4,本發明半導體元件的製備方法的一具體例2的實施條件大致上是相同於該具體例1,其不同之處在於,在形成該氮化鎵磊晶層230之前,是先於該有機金屬化學氣相沉積系統中對該具有氮化鋁緩衝薄膜221的半導體基板21加熱至570℃並通入氫氣,而於該氮化鋁緩衝薄膜221上沉積形成厚度約1~2μm的低溫氮化鎵緩衝薄膜222,而與該氮化鋁緩衝薄膜221共同構成該緩衝
單元22,隨後才於該低溫氮化鎵緩衝薄膜222上形成該氮化鎵磊晶層230。最後,即與該具體例1相同,於該低溫氮化鎵緩衝薄膜222上形成以氮化銦鎵為主的發光二極體的半導體單元23。
<具體例3~4>
配合參閱圖5,本發明半導體元件的製備方法的一具體例3、4的實施條件大致上是分別相同於該具體例1、2,也就是說,該具體例3與該具體例1相同,僅具有該氮化鋁緩衝薄膜221;該具體例4則與該具體例2相同,形成完該氮化鋁緩衝薄膜221後,還形成有該低溫氮化鎵緩衝層222,而與該具體例1、2的不同之處在於,該具體例3、4的半導體單元23為高速電子遷移率場效電晶體(HEMT)的結構。
換句話說,該具體例3、4是於該氮化磊晶層230上依序形成有一緩衝層(buffer layer)237、一通道層(channel layer)238、一阻障層(barrier layer)239、一覆蓋層(capping layer)240,及一電極層241,而與該氮化鎵磊晶層230共同構成該半導體單元23。本發明該具體例3、4的該緩衝層237與該通道層238均為氮化鎵(GaN)結構而實質上為相同,其差異在於使用感應耦合電漿蝕刻(ICP)進行蝕刻,以控制所需要的結構時,則會產生如圖5所示該緩衝層237與該通道層238的兩層結構,該阻障層239則由四元的氮化銦鋁鎵(InAlGaN)所構成,該覆蓋層240是由氮化鎵(GaN)所構成,該電極層241具有以微影蝕刻方式形成於該覆蓋
層240兩側的源極(source)242與汲極(drain)243,及形成於該源極242與該汲極243之間的閘極(gate)244。
<具體例5>
本發明半導體元件的製備方法的一具體例5的實施條件大致上是相同於該具體例1或3,其不同之處在於,該半導體基板21是使用平坦的藍寶石(sapphire)基板,且其化學氣相沉積法是使用氫化物氣相磊晶法(HVPE)於氫氣環境下直接於該氮化鋁緩衝薄膜221形成厚度大於5μm的氮化鎵磊晶層230。
<具體例6>
本發明半導體元件的製備方法的一具體例6的實施條件大致上是相同於該具體例5,其不同之處在於,該半導體基板21是使用圖案化藍寶石基板(patterned sapphire)。
<比較例1>
本發明半導體元件的製備方法的一比較例1的實施條件大致上是相同於該具體例2或4,其不同之處在於,該半導體基板21是使用平坦的藍寶石基板,且直接於該半導體基板21上形成低溫氮化鎵緩衝薄膜222,再依序以有機金屬化學氣相沉積法(MOCVD)及氫化物氣相磊晶法(HVPE)沉積形成兩層厚度分別大於1μm及大於5μm的氮化鎵磊晶層230。
<數據分析>
參閱圖6~7,顯示有以光學顯微鏡與螢光顯微鏡
觀察該具體例1於氧化鎵(β-Ga2O3)基板上沉積該氮化鋁緩衝薄膜221,再於其上形成該氮化鎵磊晶層230的表面形態。以光學顯微鏡觀察結果(見圖6)可知,該具體例1的氮化鎵磊晶層230具有六角結晶型態;而由螢光顯微鏡的觀察結果(見圖7)更可得知,由於整體氮化鎵磊晶層230的晶格缺陷少,所以沒有顯示其它發光波長而具有顏色一致的結果。主要原因在於,在氮化鋁緩衝薄膜221上能直接成長出六角結晶形態的氮化鎵磊晶層230,且由於氧化鎵(β-Ga2O3)基板的晶格常數與氮化鎵彼此較為匹配,因此,能減少氮化鎵磊晶層230的晶格缺陷。
參閱圖8~9,若將氮化鎵磊晶層230直接成長於藍寶石基板上,由於藍寶石基板與氮化鎵晶格不匹配,因此,不僅無法形成六角結晶形態(見圖8),且由圖9的螢光顯微鏡觀察結果則呈現有其它發光波長。由此可知,於藍寶石基板上磊晶成長氮化鎵磊晶層230具有較多的缺陷。
參閱圖10,顯示有該具體例1之氮化鎵磊晶層230的光激發螢光光譜圖。由量測結果可知,僅有氮化鎵磊晶層230的六角結晶結構的訊號(364nm)產生,而沒有因缺陷產生黃光能帶(yellow band)訊號。也就是說,以氧化鎵(β-Ga2O3)為基板且以氮化鋁(AlN)為緩衝層時,確實能於氫氣環境下磊晶形成高品質氮化鎵磊晶層230。
此處值得一提的是,於緩衝單元22上磊晶形成高品質的氮化鎵磊晶層230能提升後續形成半導體單元23(LED或HEMT)的磊晶品質,進而增加元件效能。對於半
導體單元23為發光二極體(LED)結構而言,該氮化鎵磊晶層230可減少電流往半導體基板21流動的量,從而降低漏電流;對於半導體單元23為高速電子遷移率場效電晶體(HEMT)結構而言,該氮化鎵磊晶層230可增加其崩潰電壓並減少漏電流。
參閱圖11~14,圖11~12分別顯示有以光學顯微鏡與螢光顯微鏡觀察該具體例5的氮化鎵磊晶層230的表面形態;圖13~14則分別顯示以光學顯微鏡與螢光顯微鏡觀察該具體例6使用圖案化的藍寶石作為基板,而以氫化物氣相磊晶法(HVPE)直接於氮化鋁緩衝薄膜221上沉積的氮化鎵磊晶層230的表面形態。一般來說,以氫化物氣相磊晶法磊晶形成薄膜具有成長速率快的優點,然而,氮化鎵與藍寶石基板間的晶格常數與膨脹係數相差較大,所以要得到低缺陷的氮化鎵時,通常會先以有機金屬氣相沉積法於藍寶石基板上成長一層較薄的氮化鎵層,以降低表面應力,才能於後續成長低缺陷的厚膜氮化鎵層。由本發明該具體例5、6及圖11~14的結果可知,本發明無須額外形成較薄的氮化鎵層,而能以氫化物氣相磊晶法直接於該氮化鋁緩衝薄膜221上形成低缺陷且膜厚大於5μm的氮化鎵磊晶層230。
參閱圖15~16,顯示以光學顯微鏡與螢光顯微鏡觀察該比較例1,以氫化物氣相磊晶法(HVPE)形成的氮化鎵晶層230的表面形態。由此量測結果可得知,該比較例1未形成該氮化鋁緩衝薄膜221,而直接於該低溫氮化鎵緩衝
薄膜222成長該氮化鎵層230時,以光學顯微鏡可觀察到該氮化鎵層230的表面形態呈現具有六角形的立體顆粒結構而具有不平整的表面形態(見圖15),且進一步由螢光顯微鏡也可觀察到,因不平整的表面導致不同波長而產生有明亮不同的光點(見圖16),也就是說,該比較例1直接於低溫氮化鎵緩衝薄膜222上成長的氮化鎵層230會具有不平整的表面形態,從而影響後續磊晶薄膜的品質及元件特性。
值得注意的是,比較圖11的該具體例5與圖15的該比較例1可知,該具體例5直接於該氮化鋁緩衝薄膜221上磊晶形成厚度大於5μm的氮化鎵層230時,其薄膜的表面形態的平整度是優於該比較例1的氮化鎵層230,也就是說,可透過僅形成該氮化鋁緩衝薄膜221,而省去如該比較例1先後沉積該低溫氮化鎵緩衝薄膜222與厚度較薄的氮化鎵磊晶層230的繁複製程工序,即能得到特性優異的該氮化鎵層230。此外,若搭配使用如該具體例6的圖案化基板時,則能更進一步的提升該氮化鎵層230的薄膜特性(見圖13)。
綜上所述,本發明半導體元件的製備方法,對該半導體基板21加熱並以物理氣相沉積法於其上形成具有較佳的緻密性與均勻性的該氮化鋁緩衝薄膜221,還進一步地以化學氣相沉積法於該氮化鋁緩衝薄膜221上形成該低溫氮化鎵緩衝薄膜222以構成該緩衝單元22,藉由該緩衝單元22不僅能防止於化學氣相沉積法成長該半導體單元
23所使用的氫氣對該半導體基板21的降解作用,還能直接於該緩衝單元22上形成具有六角結晶結構的氮化鎵磊晶層230,故確實能達成本發明之目的。
惟以上所述者,僅為本發明之較佳實施例而已,當不能以此限定本發明實施之範圍,即大凡依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。
21‧‧‧半導體基板
22‧‧‧緩衝單元
221‧‧‧氮化鋁緩衝薄膜
230‧‧‧氮化鎵磊晶層
23‧‧‧半導體單元
Claims (8)
- 一種半導體元件的製備方法,包含以下步驟:(a)準備一半導體基板,該半導體基板是由包括III族元素的材料構成;(b)對該半導體基板加熱至一介於300℃~700℃的成長溫度,並於該半導體基板上形成一緩衝單元,該緩衝單元包括一層以物理氣相沉積法沉積於該半導體基板的表面且呈連續的氮化鋁緩衝薄膜;及(c)以化學氣相沉積法於該緩衝單元上沉積一半導體單元,該半導體單元包括一形成於該緩衝單元上並具有六角結晶結構的氮化鎵磊晶層。
- 如請求項1所述的半導體元件的製備方法,其中,該步驟(b)再對具有氮化鋁緩衝薄膜的該半導體基板加熱至500℃~600℃,並以化學氣相沉積法且同時引入氫氣作為一載流氣體,而於該氮化鋁緩衝薄膜上沉積一低溫氮化鎵緩衝薄膜,該氮化鋁緩衝薄膜與該低溫氮化鎵緩衝薄膜共同構成該緩衝單元。
- 如請求項1或2所述的半導體元件的製備方法,其中,該步驟(c)再對具有緩衝單元的該半導體基板加熱至1100℃~1200℃,並同時引入氫氣作為一載流氣體,而於該緩衝單元上磊晶形成該半導體單元的氮化鎵磊晶層。
- 如請求項1或2所述的半導體元件的製備方法,其中,該步驟(c)是於該氮化鎵磊晶層上再磊晶形成有一第一 電極層、一應力層、一量子井層、一位障層、一電子阻擋層,及一第二電極層,而與該氮化鎵磊晶層共同構成該半導體單元。
- 如請求項1或2所述的半導體元件的製備方法,其中,該步驟(c)是於該氮化鎵磊晶層上再磊晶形成有一緩衝層、一通道層、一阻障層、一覆蓋層,及一電極層,而與該氮化鎵磊晶層共同構成該半導體單元。
- 如請求項1或2所述的半導體元件的製備方法,其中,該步驟(c)進一步地以化學氣相沉積法將碳元素或鐵元素摻雜於該氮化鎵磊晶層中。
- 如請求項1所述的半導體元件的製備方法,其中,該步驟(b)的物理氣相沉積法是選自濺鍍或分子束磊晶方式,以形成該氮化鋁緩衝薄膜。
- 如請求項1所述的半導體元件的製備方法,其中,該步驟(c)的化學氣相沉積法是選自有機金屬化學氣相沉積法或氫化物氣相磊晶法,以形成該半導體單元。
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