TWI565794B - Surface treatment agent and surface treatment methods - Google Patents
Surface treatment agent and surface treatment methods Download PDFInfo
- Publication number
- TWI565794B TWI565794B TW102104198A TW102104198A TWI565794B TW I565794 B TWI565794 B TW I565794B TW 102104198 A TW102104198 A TW 102104198A TW 102104198 A TW102104198 A TW 102104198A TW I565794 B TWI565794 B TW I565794B
- Authority
- TW
- Taiwan
- Prior art keywords
- diyl
- substrate
- surface treatment
- treatment agent
- formula
- Prior art date
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- 239000012756 surface treatment agent Substances 0.000 title claims description 60
- 238000000034 method Methods 0.000 title claims description 22
- 238000004381 surface treatment Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims description 104
- -1 Propane-1,2-diyl Chemical group 0.000 claims description 99
- 150000001875 compounds Chemical class 0.000 claims description 43
- 125000000217 alkyl group Chemical group 0.000 claims description 20
- 125000004432 carbon atom Chemical group C* 0.000 claims description 13
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 11
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 9
- 125000002947 alkylene group Chemical group 0.000 claims description 3
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims 1
- 125000003258 trimethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])[*:1] 0.000 claims 1
- 238000005406 washing Methods 0.000 description 27
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 23
- 239000007788 liquid Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 16
- 239000003960 organic solvent Substances 0.000 description 14
- 239000003795 chemical substances by application Substances 0.000 description 13
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 12
- 238000001035 drying Methods 0.000 description 12
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 11
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical group [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 11
- 229910052731 fluorine Inorganic materials 0.000 description 11
- 229960002050 hydrofluoric acid Drugs 0.000 description 11
- 239000011347 resin Substances 0.000 description 11
- 229920005989 resin Polymers 0.000 description 11
- 125000001153 fluoro group Chemical group F* 0.000 description 10
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 8
- 125000001931 aliphatic group Chemical group 0.000 description 8
- 238000006467 substitution reaction Methods 0.000 description 8
- 150000002430 hydrocarbons Chemical group 0.000 description 7
- 125000001165 hydrophobic group Chemical group 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910052707 ruthenium Inorganic materials 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- 125000004122 cyclic group Chemical group 0.000 description 4
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 4
- 230000002209 hydrophobic effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 3
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229930195734 saturated hydrocarbon Natural products 0.000 description 3
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 3
- RHUYHJGZWVXEHW-UHFFFAOYSA-N 1,1-Dimethyhydrazine Chemical compound CN(C)N RHUYHJGZWVXEHW-UHFFFAOYSA-N 0.000 description 2
- AUHZEENZYGFFBQ-UHFFFAOYSA-N 1,3,5-trimethylbenzene Chemical compound CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 2
- 150000004056 anthraquinones Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- XUPYJHCZDLZNFP-UHFFFAOYSA-N butyl butanoate Chemical compound CCCCOC(=O)CCC XUPYJHCZDLZNFP-UHFFFAOYSA-N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 125000004431 deuterium atom Chemical group 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- NGAZZOYFWWSOGK-UHFFFAOYSA-N heptan-3-one Chemical compound CCCCC(=O)CC NGAZZOYFWWSOGK-UHFFFAOYSA-N 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 description 2
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 2
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 description 2
- LPEKGGXMPWTOCB-UHFFFAOYSA-N methyl 2-hydroxypropionate Chemical compound COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 2
- CFJYNSNXFXLKNS-UHFFFAOYSA-N p-menthane Chemical compound CC(C)C1CCC(C)CC1 CFJYNSNXFXLKNS-UHFFFAOYSA-N 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYNQKSJRFHJZTK-UHFFFAOYSA-N (3-methoxy-3-methylbutyl) acetate Chemical compound COC(C)(C)CCOC(C)=O RYNQKSJRFHJZTK-UHFFFAOYSA-N 0.000 description 1
- IFZHGQSUNAKKSN-UHFFFAOYSA-N 1,1-diethylhydrazine Chemical compound CCN(N)CC IFZHGQSUNAKKSN-UHFFFAOYSA-N 0.000 description 1
- KDTWXGUXWNBYGS-UHFFFAOYSA-N 1,2,3,3,4,4-hexamethyl-5H-diazepine Chemical compound CC1(C(N(N(C=CC1)C)C)(C)C)C KDTWXGUXWNBYGS-UHFFFAOYSA-N 0.000 description 1
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 1
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 1
- AZLXQBNSOMJQEJ-UHFFFAOYSA-N 1,3-di(propan-2-yl)imidazolidin-2-one Chemical compound CC(C)N1CCN(C(C)C)C1=O AZLXQBNSOMJQEJ-UHFFFAOYSA-N 0.000 description 1
- NYCCIHSMVNRABA-UHFFFAOYSA-N 1,3-diethylimidazolidin-2-one Chemical compound CCN1CCN(CC)C1=O NYCCIHSMVNRABA-UHFFFAOYSA-N 0.000 description 1
- WDQFELCEOPFLCZ-UHFFFAOYSA-N 1-(2-hydroxyethyl)pyrrolidin-2-one Chemical compound OCCN1CCCC1=O WDQFELCEOPFLCZ-UHFFFAOYSA-N 0.000 description 1
- PJEXUIKBGBSHBS-UHFFFAOYSA-N 1-(hydroxymethyl)pyrrolidin-2-one Chemical compound OCN1CCCC1=O PJEXUIKBGBSHBS-UHFFFAOYSA-N 0.000 description 1
- HNAGHMKIPMKKBB-UHFFFAOYSA-N 1-benzylpyrrolidine-3-carboxamide Chemical compound C1C(C(=O)N)CCN1CC1=CC=CC=C1 HNAGHMKIPMKKBB-UHFFFAOYSA-N 0.000 description 1
- 125000004973 1-butenyl group Chemical group C(=CCC)* 0.000 description 1
- 125000004972 1-butynyl group Chemical group [H]C([H])([H])C([H])([H])C#C* 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- CNJRPYFBORAQAU-UHFFFAOYSA-N 1-ethoxy-2-(2-methoxyethoxy)ethane Chemical compound CCOCCOCCOC CNJRPYFBORAQAU-UHFFFAOYSA-N 0.000 description 1
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 description 1
- 125000006019 1-methyl-1-propenyl group Chemical group 0.000 description 1
- 125000006021 1-methyl-2-propenyl group Chemical group 0.000 description 1
- 125000006017 1-propenyl group Chemical group 0.000 description 1
- DCALJVULAGICIX-UHFFFAOYSA-N 1-propylpyrrolidin-2-one Chemical compound CCCN1CCCC1=O DCALJVULAGICIX-UHFFFAOYSA-N 0.000 description 1
- 125000000530 1-propynyl group Chemical group [H]C([H])([H])C#C* 0.000 description 1
- VCLJODPNBNEBKW-UHFFFAOYSA-N 2,2,4,4,6,8,8-heptamethylnonane Chemical compound CC(C)(C)CC(C)CC(C)(C)CC(C)(C)C VCLJODPNBNEBKW-UHFFFAOYSA-N 0.000 description 1
- 229940043268 2,2,4,4,6,8,8-heptamethylnonane Drugs 0.000 description 1
- BJINVQNEBGOMCR-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethyl acetate Chemical compound COCCOCCOC(C)=O BJINVQNEBGOMCR-UHFFFAOYSA-N 0.000 description 1
- MVPRCWFLPDNGNR-UHFFFAOYSA-N 2-[amino(2-hydroxyethyl)amino]ethanol Chemical compound OCCN(N)CCO MVPRCWFLPDNGNR-UHFFFAOYSA-N 0.000 description 1
- 125000004974 2-butenyl group Chemical group C(C=CC)* 0.000 description 1
- 125000000069 2-butynyl group Chemical group [H]C([H])([H])C#CC([H])([H])* 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- 125000003229 2-methylhexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- 125000004975 3-butenyl group Chemical group C(CC=C)* 0.000 description 1
- 125000000474 3-butynyl group Chemical group [H]C#CC([H])([H])C([H])([H])* 0.000 description 1
- 125000006027 3-methyl-1-butenyl group Chemical group 0.000 description 1
- 125000006043 5-hexenyl group Chemical group 0.000 description 1
- OZJPLYNZGCXSJM-UHFFFAOYSA-N 5-valerolactone Chemical class O=C1CCCCO1 OZJPLYNZGCXSJM-UHFFFAOYSA-N 0.000 description 1
- ATNOEFKGTJYZIQ-UHFFFAOYSA-N CC(CCCCCCCCC)C.CNC.CNC Chemical compound CC(CCCCCCCCC)C.CNC.CNC ATNOEFKGTJYZIQ-UHFFFAOYSA-N 0.000 description 1
- JNIDOAFUYGHPFJ-UHFFFAOYSA-N CCCOC.CCOC(C)=O Chemical compound CCCOC.CCOC(C)=O JNIDOAFUYGHPFJ-UHFFFAOYSA-N 0.000 description 1
- HPCIXPCAAKYXOL-UHFFFAOYSA-N CN(C)C(C(C)(C)C)CCCCCCCC Chemical compound CN(C)C(C(C)(C)C)CCCCCCCC HPCIXPCAAKYXOL-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- XXRCUYVCPSWGCC-UHFFFAOYSA-N Ethyl pyruvate Chemical compound CCOC(=O)C(C)=O XXRCUYVCPSWGCC-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 description 1
- DIQMPQMYFZXDAX-UHFFFAOYSA-N Pentyl formate Chemical compound CCCCCOC=O DIQMPQMYFZXDAX-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229940100198 alkylating agent Drugs 0.000 description 1
- 239000002168 alkylating agent Substances 0.000 description 1
- 125000000304 alkynyl group Chemical group 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 1
- VEZXCJBBBCKRPI-UHFFFAOYSA-N beta-propiolactone Chemical compound O=C1CCO1 VEZXCJBBBCKRPI-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- OBNCKNCVKJNDBV-UHFFFAOYSA-N butanoic acid ethyl ester Natural products CCCC(=O)OCC OBNCKNCVKJNDBV-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- BTMVHUNTONAYDX-UHFFFAOYSA-N butyl propionate Chemical compound CCCCOC(=O)CC BTMVHUNTONAYDX-UHFFFAOYSA-N 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- CZZYITDELCSZES-UHFFFAOYSA-N diphenylmethane Chemical compound C=1C=CC=CC=1CC1=CC=CC=C1 CZZYITDELCSZES-UHFFFAOYSA-N 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- CKSRFHWWBKRUKA-UHFFFAOYSA-N ethyl 2-ethoxyacetate Chemical compound CCOCC(=O)OCC CKSRFHWWBKRUKA-UHFFFAOYSA-N 0.000 description 1
- FJAKCEHATXBFJT-UHFFFAOYSA-N ethyl 2-oxobutanoate Chemical compound CCOC(=O)C(=O)CC FJAKCEHATXBFJT-UHFFFAOYSA-N 0.000 description 1
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 1
- 229940117360 ethyl pyruvate Drugs 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- MELUCTCJOARQQG-UHFFFAOYSA-N hex-2-yne Chemical compound CCCC#CC MELUCTCJOARQQG-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine Substances NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- CABDFQZZWFMZOD-UHFFFAOYSA-N hydrogen peroxide;hydrochloride Chemical compound Cl.OO CABDFQZZWFMZOD-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000000555 isopropenyl group Chemical group [H]\C([H])=C(\*)C([H])([H])[H] 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 150000002596 lactones Chemical class 0.000 description 1
- 235000001510 limonene Nutrition 0.000 description 1
- 229940087305 limonene Drugs 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- HSDFKDZBJMDHFF-UHFFFAOYSA-N methyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OC HSDFKDZBJMDHFF-UHFFFAOYSA-N 0.000 description 1
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 1
- CWKLZLBVOJRSOM-UHFFFAOYSA-N methyl pyruvate Chemical compound COC(=O)C(C)=O CWKLZLBVOJRSOM-UHFFFAOYSA-N 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- OMFLEOWHTQAHEE-UHFFFAOYSA-N n-ethyl-1h-indol-2-amine Chemical class C1=CC=C2NC(NCC)=CC2=C1 OMFLEOWHTQAHEE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- BKIMMITUMNQMOS-UHFFFAOYSA-N nonane Chemical compound CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 description 1
- UMRZSTCPUPJPOJ-KNVOCYPGSA-N norbornane Chemical compound C1C[C@H]2CC[C@@H]1C2 UMRZSTCPUPJPOJ-KNVOCYPGSA-N 0.000 description 1
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- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 238000005502 peroxidation Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229960000380 propiolactone Drugs 0.000 description 1
- ILPVOWZUBFRIAX-UHFFFAOYSA-N propyl 2-oxopropanoate Chemical compound CCCOC(=O)C(C)=O ILPVOWZUBFRIAX-UHFFFAOYSA-N 0.000 description 1
- HUAZGNHGCJGYNP-UHFFFAOYSA-N propyl butyrate Chemical compound CCCOC(=O)CCC HUAZGNHGCJGYNP-UHFFFAOYSA-N 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 125000002568 propynyl group Chemical group [*]C#CC([H])([H])[H] 0.000 description 1
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- 239000011342 resin composition Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
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- 235000007586 terpenes Nutrition 0.000 description 1
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- 150000003507 terpinene derivatives Chemical class 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
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Description
本發明係關於基板表面之疏水化處理所使用的表面處理劑及使用其之表面處理方法。
於半導體裝置等之製造中,係在將無機圖型形成於基板時採用微影技術。此微影技術,係使用感光性樹脂組成物將感光性樹脂層設於基板上,接著,選擇性地照射(曝光)活性放射線於此,並進行顯像處理,藉此將樹脂圖型(光阻圖型)形成於基板上。接著,以該樹脂圖型作為遮罩對基板進行蝕刻,藉以形成無機圖型。
但,近年來,半導體裝置之高積體化、微細化之傾向提高,無機圖型之微細化、高縱寬比化日益發展。然而,另一方面,卻產生所謂圖型倒塌的問題。此圖型倒塌,係指使多數無機圖型並聯形成於基板上時,相鄰接的圖型彼此會如同相依靠般地接近,依據情況而有圖型從基部折損的現象。若產生如此之圖型倒塌,則由於無法得到所期望的製品,因此引起製品的產率或信賴性降低。
此圖型倒塌,已知為在圖型形成後之洗滌處
理中,洗滌液乾燥時,因該洗滌液的表面張力而產生。也就是說,於乾燥過程中洗滌液被去除時,根據在圖型間洗滌液之表面張力的應力作用,而產生圖型倒塌。
因此,目前,雖進行了諸多於洗滌液中添加使表面張力降低的物質(異丙醇、氟系界面活性劑等),以防止圖型倒塌的嘗試(例如,參照專利文獻1、2),但如此之洗滌液的研討,並不足以防止圖型倒塌。
[專利文獻1]日本特開平6-163391號公報
[專利文獻2]日本特開平7-142349號公報
[專利文獻3]日本特開平11-511900號公報
[專利文獻4]日本特開2011-122137號公報
因此,雖並非關於圖型倒塌,但為了將成為遮罩的樹脂圖型與基板表面的密著性提昇,以防止因顯像液所致之樹脂圖型的局部損失,在將感光性樹脂層設於基板前,對於基板表面進行使用有六甲基二矽氮烷(HMDS)等矽烷化劑的疏水化處理(矽烷化處理)(例如,參照專利文獻3之「發明的背景」)。
本發明者們考慮到若藉由矽烷化劑來將無機圖型的表面予以疏水化則在洗滌後的乾燥過程中作用於圖型間的應力會降低,應可防止圖型倒塌,因此使用HMDS、N,N-二甲基胺基三甲基矽烷(DMATMS)等幾種矽烷化劑針對各種基板嚐試了疏水化處理。然而,雖基板表面的材質為Si時能夠高度疏水化,但基板表面的材質為TiN或SiN時,無論藉由何種矽烷化劑其疏水化的程度皆不充分。
此外,藉由濕蝕刻來形成無機圖型時,雖有藉由氟酸而處理基板表面的情況,但於此情況中,上述之以矽烷化劑所進行的基板表面之疏水化會有變得更加困難的傾向。基板表面的材質為TiN或SiN時,此傾向明顯。
對於如此之問題,已知有藉由使用2,2,5,5-四甲基-2,5-二矽基-1-氮雜環戊烷等環狀矽氮烷化合物作為矽烷化劑,而可將表面材質為TiN或SiN的基板予以疏水化(參照專利文獻4)。但,使用環狀矽氮烷化合物時,會有難以將在半導體裝置的製造中所廣泛使用之表面材質為矽的基板稍微疏水化的情況。
本發明係鑑於如此類之以往的情事而完成者,其目的為提供一種即使藉由氟酸來處理基板表面時,也可將基板表面的材質為矽的基板高度疏水化,且,即使基板表面的材質為TiN或SiN時也可高度疏水化的表面處理劑,及使用有如此之表面處理劑之表面處理方法。
本發明者們為了解決上述課題履經銳意研究。其結果發現:可藉由於基板表面之疏水化處理中所使用的表面處理劑中含有具有二甲基胺基之特定結構的單矽烷化合物或雙矽烷化合物來解決上述課題,以致完成本發明。具體而言,本發明係提供以下者。
本發明之第1型態係一種表面處理劑,其係使用於基板表面之疏水化處理,且含有以下述式(1)或(2)所表示的化合物,R1 aSi[N(CH3)2]4-a...(1)(式(1)中,R1係各自獨立為氫原子的一部分或全部可被氟原子所取代的碳數1~18之直鏈或分支鏈脂肪族烴基,a為1或2),R2 b[N(CH3)2]3-bSi-R4-SiR3 c[N(CH3)2]3-c...(2)(式(2)中,R2及R3係各自獨立為氫原子、或碳數1~4之直鏈或分支鏈烷基,R4係碳數1~16之直鏈或分支鏈伸烷基,b及c係各自獨立為0~2之整數)。
本發明之第2型態係使第1型態之表面處理劑暴露於基板表面,將基板表面予以疏水化的表面處理方法。
若依據本發明,則可提供一種即使藉由氟酸來處理基板表面時也可將基板表面的材質為矽的基板高度
疏水化,且,即使基板表面的材質為TiN或SiN時也可高度疏水化的表面處理劑,及使用有如此之表面處理劑之表面處理方法。
首先,針對本發明之表面處理劑進行說明。本發明之表面處理劑係適合使用於將基板表面予以疏水化之際。在此,「基板」係可列舉為了製造半導體裝置所使用的基板。此外,「基板表面」係除基板自身的表面之外,可列舉設置於基板上的無機圖型表面、或未圖型化的無機層之表面等。
設置於基板上的無機圖型係可列舉:藉由在存在於基板的無機層之表面使用微影技術來形成樹脂圖型(光阻圖型),以該樹脂圖型作為遮罩對無機層實施蝕刻處理所製作出的圖型。無機層係除基板自身之外,可列舉形成於基板表面的無機物之膜等。
尤其,本發明之表面處理劑,除基板表面的材質為矽的情況以外,亦適合使用於基板表面的材質為TiN或SiN的情況。以往,於基板表面的疏水化所使用的六甲基二矽氮烷(HMDS)或環狀矽氮烷化合物等之矽烷化劑,並無法在基板表面的材質為矽的情況與為TiN或SiN的情況兼具基板表面的高度疏水化。但,若依據本發
明之表面處理劑,則可提供一種可在基板表面的材質為矽的情況與為TiN或SiN的情況兼具基板表面的高度疏水化,且能夠適用於由廣泛的材料所構成的基板之疏水化的表面處理劑。
此外,於藉由氟酸來處理基板表面的情況中,雖有基板表面的疏水化變得困難的傾向,但若藉由本發明之表面處理劑,則即使在藉由氟酸來處理基板表面的情況中,也可良好地將基板表面予以疏水化。
本發明之表面處理劑,係可使用於藉由加熱或起泡等手段使其氣化後,使經氣化的表面處理劑接觸基板的表面而進行表面處理,亦可使用於藉由旋轉塗佈法或浸漬法等手段將液體直接塗佈於基板的表面而進行表面處理。
本發明之表面處理劑係含有以下述式(1)或(2)所表示的化合物作為矽烷化劑。
R1 aSi[N(CH3)2]4-a...(1)(式(1)中,R1係各自獨立為氫原子的一部分或全部可被氟原子所取代的碳數1~18之直鏈或分支鏈脂肪族烴基,a為1或2)。
R2 b[N(CH3)2]3-bSi-R4-SiR3 c[N(CH3)2]3-c...(2)(式(2)中,R2及R3係各自獨立為氫原子、或碳數1~4之直鏈或分支鏈烷基,R4係碳數1~16之直鏈或分支鏈伸烷基,b及c係各自獨立為0~2之整數)。
表面處理劑係可含有複數之以式(1)或(2
)所表示的化合物,亦可組合式(1)所表示的化合物與式(2)所表示的化合物而含有。以下,針對表面處理劑所含有的成分進行詳細地說明。
本發明之表面處理劑係含有上述式(1)或(2)所表示的化合物作為矽烷化劑。該式(1)或(2)所表示的化合物,係用來將基板表面予以矽烷化,且提高基板表面之疏水性的成分。
表面處理劑係可單獨使用式(1)或(2)所表示的化合物,亦可利用後述之有機溶劑來將式(1)或式(2)所表示的化合物加以稀釋而使用。因此,於表面處理劑中之以式(1)或(2)所表示的化合物之含量,係在不阻礙本發明之目的的範圍內並無特別限定。
式(1)所表示的化合物,R1係氫原子的一部分或全部可被氟原子所取代的碳數1~18之直鏈或分支鏈脂肪族烴基。R1的碳數係以2~18為佳,以8~18為更佳。此外,R1係可為飽和烴基,亦可為不飽和烴基。R1為不飽和烴基時,不飽和鍵的位置及數目並無特別限定,不飽和鍵係可為雙鍵結或三鍵結。
R1為不被氟原子所取代的直鏈或分支鏈飽和烴基時的例子係可列舉甲基、乙基、n-丙基、異丙基、n-
丁基、sec-丁基、tert-丁基、異丁基、戊基、異戊基、tert-戊基、己基、2-己基、3-己基、庚基、2-庚基、3-庚基、異庚基、tert-庚基、n-辛基、異辛基、tert-辛基、2-乙基己基、壬基、異壬基、癸基、十二基、十三基、十四基、十五基、十六基、十七基及十八基等。
R1為不被氟原子取代的直鏈或分支鏈不飽和烴基時的例子係可列舉乙烯基、1-丙烯基、烯丙基、異丙烯基、1-丁烯基、2-丁烯基、3-丁烯基、1,3-丁二烯基、1-乙基乙烯基、1-甲基-1-丙烯基、1-甲基-2-丙烯基、4-戊烯基、1,3-戊二烯基、2,4-戊二烯基、3-甲基-1-丁烯基、5-己烯基、2,4-己二烯基、6-庚烯基、7-辛烯基、8-壬烯基、9-癸烯基、10-十一烯基、11-十二烯基、12-十三烯基、13-十四烯基、14-十五烯基、15-十六烯基、16-十七烯基、17-十八烯基、乙炔基、丙炔基、1-丙炔基、1-丁炔基、2-丁炔基、3-丁炔基、1-戊炔基、2-戊炔基、3-戊炔基、4-戊炔基、1-己炔基、2-己炔基、3-己炔基、4-己炔基、5-己炔基、6-庚炔基、7-辛炔基、8-壬炔基、9-癸炔基、10-十一炔基、11-十二炔基、12-十三炔基、13-十四炔基、14-十五炔基、15-十六炔基、16-十七炔基、17-十八炔基等。
R1為被氟原子所取代的直鏈或分支鏈脂肪族烴基時,氟原子的取代數及取代位置並無特別限定。脂肪族烴基中之氟原子的取代數,係以脂肪族烴基所具有的氫原子之數目的50%以上為佳,以70%以上為更佳,以80
%以上為特佳。
R1基於容易得到優異的疏水化效果,以氫原子的一部分或全部可被氟原子所取代的碳數1~18之直鏈脂肪族烴基為佳。此外,R1基於容易得到保存安定性優異的表面處理劑等,以氫原子的一部分或全部可被氟原子所取代的碳數1~18之直鏈飽和烴基(碳數1~18之烷基)為更佳。
式(1)中,a為1或2,以1為佳。乃因a為1時,基板表面的材質為TiN時之疏水化效果特別優異之故。
以式(1)所表示的化合物所進行之疏水化,係藉由式(1)所表示的化合物與基板表面之反應,以將作為疏水性基的R1導入基板表面而產生。R1為直鏈時,由於立體阻礙少,因此被認為於基板表面容易使疏水性基密集,且容易得到良好的疏水化效果。
此外,a為1時,R係相對於基板表面容易被垂直配置,因此於基板表面容易使疏水性基密集。另一方面,a為2時,在式(1)所表示的化合物之複數的分子間,疏水性基彼此的立體阻礙容易產生,而難以於基板表面使疏水性基密集。因而一般認為a為1時較a為2時更容易得到良好的疏水化效果。
式(2)所表示的化合物,R2及R3係包含氫原子、或
碳數1~4之直鏈或分支鏈烷基。R2及R3可為相同亦可為相異。R2及R3係以氫原子、或碳數1~3之直鏈或分支鏈烷基為佳,以氫原子或甲基為更佳,以甲基為特佳。R2及R3為如此之基時,由於基板與式(2)所表示的化合物之間的立體阻礙為低,因此容易使式(2)所表示的化合物與基板表面良好地反應。
R2及R3為碳數1~4之直鏈或分支鏈烷基時的具體例係可列舉甲基、乙基、n-丙基、異丙基、n-丁基、sec-丁基、tert-丁基及異丁基等。
式(2)所表示的化合物,R4係包含碳數1~16之直鏈或分支鏈伸烷基。作為R4之直鏈或分支鏈伸烷基的碳數係以1~10為佳,以2~8為更佳。另外,直鏈伸烷基係指伸甲基或α,ω-直鏈伸烷基,分支鏈伸烷基係指伸甲基及α,ω-直鏈伸烷基以外的伸烷基。R4由於作為疏水性基而發揮作用,因此藉由式(2)所表示的化合物與基板表面產生反應,基板表面會被疏水化。R4為如此之碳數之直鏈或分支鏈伸烷基時,容易使式(2)所表示的化合物與基板表面良好地反應,而容易將基板表面良好地疏水化。
此外,R4係以直鏈伸烷基為佳。R4為直鏈伸烷基時,由於式(2)所表示的化合物間之立體阻礙低,因此在作為疏水性基之R4密集後的狀態下,容易使式(2)所表示的化合物鍵結於基板表面。
R4為碳數1~6之直鏈或分支鏈伸烷基時的例
子係可列舉:伸甲基、1,2-伸乙基、1,1-伸乙基、丙烷-1,3-二基、丙烷-1,2-二基、丙烷-1,1-二基、丙烷-2,2-二基、丁烷-1,4-二基、丁烷-1,3-二基、丁烷-1,2-二基、丁烷-1,1-二基、丁烷-2,2-二基、丁烷-2,3-二基、戊烷-1,5-二基、戊烷-1,4-二基、己烷-1,6-二基、庚烷-1,7-二基、辛烷-1,8-二基、2-乙基己基-1,6-二基、壬烷-1,9-二基、癸烷-1,10-二基、十一烷-1,11-二基、十二烷-1,12-二基、十三烷-1,13-二基、十四烷-1,14-二基、十五烷-1,15-二基及十六烷-1,16-二基等。
於式(2)所表示的化合物中,b及c係各自獨立為0~2之整數。針對式(2)所表示的化合物,由於合成及取得容易,因此以b及c為1或2為佳,以2為更佳。
本發明之表面處理劑,亦可進一步含有有機溶劑。藉由將式(1)或(2)所表示的化合物利用有機溶劑進行稀釋,而可使對於基板表面之塗佈作業性、處理性、與洗滌液的取代性等提昇。
該有機溶劑並不與式(1)或(2)所表示的化合物反應,而是只要可將式(1)或(2)所表示的化合物溶解,且,對於基板表面的損害少者,則可無特別限定地使用以往所周知的有機溶劑。
具體而言,可列舉二甲基亞碸等之亞碸類;
二甲基碸、二乙基碸、雙(2-羥乙基)碸、四亞甲基碸等之碸類;N,N-二甲基甲醯胺、N-甲基甲醯胺、N,N-二甲基乙醯胺、N-甲基乙醯胺、N,N-二乙基乙醯胺等之醯胺類;N-甲基-2-吡咯啶酮、N-乙基-2-吡咯啶酮、N-丙基-2-吡咯啶酮、N-羥甲基-2-吡咯啶酮、N-羥乙基-2-吡咯啶酮等之內醯胺類;1,3-二甲基-2-咪唑啶酮、1,3-二乙基-2-咪唑啶酮、1,3-二異丙基-2-咪唑啶酮等之咪唑啶酮類;乙二醇二甲基醚、乙二醇二乙基醚、二乙二醇二甲基醚、二乙二醇甲基乙基醚、二乙二醇二乙基醚、三乙二醇二甲基醚等之(聚)伸烷基二醇二烷基醚類;乙二醇單甲基醚乙酸酯、乙二醇單乙基醚乙酸酯、二乙二醇單甲基醚乙酸酯、二乙二醇單乙基醚乙酸酯、丙二醇單甲基醚乙酸酯、丙二醇單乙基醚乙酸酯等之(聚)伸烷基二醇烷基醚乙酸酯類;四氫呋喃等其他的醚類;甲基乙基酮、環己酮、2-庚酮、3-庚酮等之酮類;2-羥基丙酸甲酯、2-羥基丙酸乙酯等之乳酸烷基酯類;3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯、乙氧基乙酸乙酯、3-甲基-3-甲氧基丁基乙酸酯、3-甲基-3-甲氧基丁基丙酸酯、乙酸乙酯、乙酸-n-丙酯、乙酸-i-丙酯、乙酸-n-丁酯、乙酸-i-丁酯、甲酸-n-戊酯、乙酸-i-戊酯、丙酸-n-丁酯、丁酸乙酯、丁酸-n-丙酯、丁酸-i-丙酯、丁酸-n-丁酯、丙酮酸甲酯、丙酮酸乙酯、丙酮酸-n-丙酯、乙醯乙酸甲酯、乙醯乙酸乙酯、2-側氧丁酸乙酯等之其他的酯類;β-丙內酯、γ-丁內酯、δ-戊內酯等之內酯類;n-己烷、
n-庚烷、n-辛烷、n-壬烷、甲基辛烷、n-癸烷、n-十一烷、n-十二烷、2,2,4,6,6-五甲基庚烷、2,2,4,4,6,8,8-七甲基壬烷、環己烷、甲基環己烷等之直鏈狀、分支鏈狀或環狀之烴類;苯、甲苯、萘、1,3,5-三甲苯等之芳香族烴類;對薄荷烷、二苯基薄荷烷、檸檬烯、萜品烯、莰烷、降莰烷、蒎烷等之萜烯類等。此等有機溶劑係可單獨或混合2種以上使用。
此等當中,由於疏水性高,且容易抑制表面處理劑所含有的式(1)或(2)所表示之化合物與空氣中之水分的反應,故以直鏈狀、分支鏈狀或環狀之烴類為佳。
利用有機溶劑將式(1)或(2)所表示的化合物進行稀釋時,所稀釋的液中之式(1)或式(2)所表示的化合物之濃度係於表面處理劑中,以0.1~99.9質量%為佳,以1~50質量%為更佳,以1~30質量%又更佳,以3~20質量%為特佳。藉由將表面處理劑中之式(1)或(2)所表示的化合物之含量設為上述範圍,而可保有表面處理的效果,且使對於表面基板之塗佈作業性、處理性、與洗滌液的取代性等提昇。
利用有機溶劑將式(1)或(2)所表示的化合物進行稀釋的時序並無特別限定。例如,可在利用有機溶劑將式(1)或式(2)所表示的化合物預先作了稀釋的狀態下保管,亦可在即將使用表面處理劑來處理基板表面之前利用有機溶劑將式(1)或式(2)所表示的化合物進
行稀釋。
接著,針對本發明之表面處理方法進行說明。本發明之表面處理方法,係使本發明之表面處理劑暴露於基板表面,將該基板表面進行處理者。
本發明之表面處理方法,係將基板表面予以疏水化者,其處理目的雖可為任何目的,但其處理目的之代表的例子係可列舉(1)將基板表面予以疏水化,使對於樹脂圖型等之密著性提昇、(2)於洗滌後的乾燥過程中,防止基板表面之無機圖型的圖型倒塌。
以上述(1)為目的時,例如只要在將感光性樹脂層形成於基板表面之前,將本發明之表面處理劑暴露於基板表面即可。將本發明之表面處理劑暴露於基板表面的方法,可無特別限制地使用以往所周知的方法。可列舉例如使本發明之表面處理劑氣化成為蒸氣,而使其蒸氣接觸基板表面的方法;藉由旋轉塗佈法或浸漬法等使本發明之表面處理劑接觸基板表面的方法等。藉由如此的操作而提昇基板表面的疏水性,因此,會提昇對於感光性樹脂層等之密著性。
以上述(2)為目的時,只要在進行形成無機圖型後的洗滌處理後之乾燥前,將本發明之表面處理劑暴露於基板表面即可。
針對藉由實施如此的表面處理而可防止在洗
滌後的乾燥過程中基板表面之無機圖型的倒塌之理由進行說明。
於將無機圖型形成於基板表面之際可進行例如乾蝕刻、濕蝕刻。以乾蝕刻所進行的圖型形成中係藉由鹵素系氣體等來進行乾蝕刻,接著,利用SC-1(氨.過氧化氫)、SC-2(鹽酸.過氧化氫水)等來將粒子或金屬雜質等之蝕刻殘渣洗淨。然後,以水或異丙醇等之洗滌液所進行的洗滌後,藉由自然乾燥或旋轉乾燥等讓無機圖型的表面乾燥。另一方面,以濕蝕刻所進行的圖型形成中係藉由DHF(稀釋氟酸)、BHF(氟酸.氟化氨)、SPM(硫酸.過氧化氫水)、APM(氨.過氧化氫水)等來進行濕蝕刻,以水或異丙醇等之洗滌液所進行的洗滌後,藉由自然乾燥或旋轉乾燥讓無機圖型的表面乾燥。
另外,乾燥處理,例如,即使為日本專利第3866130號公報的段落[0030]以後所記載之類的方法亦無妨。
本發明之表面處理方法中係於上述之無機圖型乾燥之前,利用本發明之表面處理劑來處理無機圖型表面並予以疏水化。較佳為在以洗滌液進行洗滌之前,利用本發明之表面處理劑來處理無機圖型表面並予以疏水化。
在此,在洗滌後之乾燥過程中作用於無機圖型之圖型間的力F係如同以下之式(I)所表示。惟,γ係表示洗滌液的表面張力,θ係表示洗滌液的接觸角,A係表示無機圖型的縱寬比,D係表示無機圖型側壁間的距離。
F=2 γ.cos θ.A/D...(I)
因而,只要可將無機圖型的面予以,且提高洗滌液的接觸角(將cos θ縮小),則可在洗滌後的乾燥過程中將作用於無機圖型間的力減低,並可防止圖型倒塌。
此表面處理係藉由將形成有無機圖型的基板浸漬於表面處理劑中、或將表面處理劑塗佈或吹附於無機圖型而進行。處理時間係以10秒鐘~60分鐘為佳。
另外,較佳為在利用表面處理劑來處理無機圖型表面之前,利用異丙醇等之水溶性有機溶劑取代在無機圖型之形成中所使用的DHF(稀釋氟酸)或BHF(氟酸.氟化氨)等。藉此,提昇與表面處理劑之取代性,並提高疏水性提昇的效果。
另外,就產率之觀點而言,係以連續進行表面處理與洗滌處理的處理為佳。因此,表面處理劑係以選擇與洗滌液之取代性優異者為佳。基於此觀點,使用水系者作為洗滌液時,表面處理劑係以含有有機溶劑作為多量成分者為佳。乃因藉由含有有機溶劑作為多量成分,會提昇表面處理劑之與洗滌液的取代性之故。
以下,雖藉由實施例進一步具體說明本發明,但本發明並不限定於以下之實施例。
使用有由表1~4記載的矽烷化劑5質量%與n-癸烷95質量%所成之表面處理劑。將表1~4記載的表面材質之基板利用濃度1質量%的氟化氫水溶液在25℃、洗淨1分鐘後,在室溫下浸漬於表面處理劑中60秒鐘。接著,利用甲基乙基酮來洗滌基板表面,藉由氮氣流使其乾燥。然後,使用Dropmaster700(協和界面科學股份有限公司製),於基板表面滴下純水液滴(1.8μL),而測量出於滴下10秒後之接觸角。將結果展示於表1~4。
參考例1係針對未實施以氟化氫酸所進行的處理與以表面處理劑所進行的處理之基板,與實施例1相同地測量出接觸角。此外,參考例2係針對實施以氟化氫酸所進行的處理且未實施以表面處理劑所進行的處理之基板,與實施例1相同地測量出接觸角。將在參考例1及參考例2所測量出的各基板之接觸角展示於表1。
根據實施例1、及實施例3~6可知:藉由含
有3個二甲基胺基與脂肪族烴基鍵結於矽原子的單矽烷化合物作為矽烷化劑之表面處理劑,而可將表面材質為SiN(氮化矽)、及TiN(氮化鈦)的基板良好地疏水化。此外,可知若依據實施例1、及實施例3~6的表面處理劑,則可將矽基板的表面良好地疏水化。
根據實施例2可知:藉由含有2個二甲基胺基與2個甲基鍵結於矽原子的單矽烷化合物之雙(二甲基胺)二甲基矽烷作為矽烷化劑之表面處理劑,而可將表面材質為SiN的基板良好地疏水化。此外,可知若依據實施例2的表面處理劑,則可將矽基板的表面良好地疏水化。
根據實施例7~9可知:藉由含有二甲基胺基會分別鍵結於2個矽原子,且2個矽原子會經由碳數2~8之伸烷基來連結的雙矽烷化合物作為矽烷化劑之表面處理劑,而可將表面材質為SiN的基板良好地疏水化。此外,可知若依據實施例7~9的表面處理劑,則可將矽基板的表面良好地疏水化。
此外,可知在實施例1~9使用的基板係皆以氟酸來處理,因此,若依據實施例1~9的表面處理劑,則即使是藉由氟酸所表面處理的基板亦能良好地疏水化。
Claims (6)
- 一種表面處理劑,其係使用於基板表面之疏水化處理,且含有以下述式(2)所表示的化合物,R2 b[N(CH3)2]3-bSi-R4-SiR3 c[N(CH3)2]3-c...(2)(式(2)中,R2及R3係各自獨立為氫原子、或碳數1~4之直鏈或分支鏈烷基,R4係由丙烷-1,3-二基、丙烷-1,2-二基、丙烷-1,1-二基、丙烷-2,2-二基、丁烷-1,4-二基、丁烷-1,3-二基、丁烷-1,2-二基、丁烷-1,1-二基、丁烷-2,2-二基、丁烷-2,3-二基、戊烷-1,5-二基、戊烷-1,4-二基、己烷-1,6-二基、庚烷-1,7-二基、辛烷-1,8-二基、2-乙基己基-1,6-二基、壬烷-1,9-二基、癸烷-1,10-二基、十一烷-1,11-二基、十二烷-1,12-二基、十三烷-1,13-二基、十四烷-1,14-二基、十五烷-1,15-二基及十六烷-1,16-二基所成之群選出的直鏈或分支鏈伸烷基,b及c係各自獨立為1或2之整數)。
- 如請求項1所記載之表面處理劑,其中,b及c為1。
- 如請求項1所記載之表面處理劑,其中,R4為直鏈伸烷基。
- 如請求項1所記載之表面處理劑,其中,R2及R3為氫原子或甲基。
- 如請求項1所記載之表面處理劑,其係進一步含有溶劑。
- 一種表面處理方法,其係使如請求項1所記載之 表面處理劑暴露於基板表面,將前述基板表面予以疏水化。
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US20030021996A1 (en) * | 2001-04-06 | 2003-01-30 | Yuri Gudimenko | Release surfaces |
TW200845212A (en) * | 2007-02-15 | 2008-11-16 | Air Prod & Chem | Activated chemical process for enhancing material properties of dielectric films |
WO2012002200A1 (ja) * | 2010-06-30 | 2012-01-05 | セントラル硝子株式会社 | ウェハの洗浄方法 |
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US7553686B2 (en) * | 2002-12-17 | 2009-06-30 | The Regents Of The University Of Colorado, A Body Corporate | Al2O3 atomic layer deposition to enhance the deposition of hydrophobic or hydrophilic coatings on micro-electromechanical devices |
US8071160B2 (en) * | 2007-10-29 | 2011-12-06 | Integrated Surface Technologies | Surface coating process |
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