TWI563623B - Circuit device with a semiconductor component and the process for its testing - Google Patents

Circuit device with a semiconductor component and the process for its testing

Info

Publication number
TWI563623B
TWI563623B TW099142338A TW99142338A TWI563623B TW I563623 B TWI563623 B TW I563623B TW 099142338 A TW099142338 A TW 099142338A TW 99142338 A TW99142338 A TW 99142338A TW I563623 B TWI563623 B TW I563623B
Authority
TW
Taiwan
Prior art keywords
testing
circuit device
semiconductor component
semiconductor
component
Prior art date
Application number
TW099142338A
Other languages
English (en)
Other versions
TW201135897A (en
Inventor
Thomas Jacke
Christian Foerster
Holger Heinisch
Joachim Joos
Original Assignee
Bosch Gmbh Robert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert filed Critical Bosch Gmbh Robert
Publication of TW201135897A publication Critical patent/TW201135897A/zh
Application granted granted Critical
Publication of TWI563623B publication Critical patent/TWI563623B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/22Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/14Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2607Circuits therefor
    • G01R31/2621Circuits therefor for testing field effect transistors, i.e. FET's
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2884Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
TW099142338A 2009-12-08 2010-12-06 Circuit device with a semiconductor component and the process for its testing TWI563623B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009047670.9A DE102009047670B4 (de) 2009-12-08 2009-12-08 Schaltungseinrichtung mit einem Halbleiter-Bauelement

Publications (2)

Publication Number Publication Date
TW201135897A TW201135897A (en) 2011-10-16
TWI563623B true TWI563623B (en) 2016-12-21

Family

ID=43332740

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099142338A TWI563623B (en) 2009-12-08 2010-12-06 Circuit device with a semiconductor component and the process for its testing

Country Status (7)

Country Link
US (1) US9275915B2 (zh)
EP (1) EP2510540A1 (zh)
JP (1) JP5559348B2 (zh)
CN (1) CN102668053B (zh)
DE (1) DE102009047670B4 (zh)
TW (1) TWI563623B (zh)
WO (1) WO2011069737A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8737031B2 (en) 2011-09-14 2014-05-27 Honda Motor Co., Ltd. Voltage monitoring circuit, and vehicle equipped with same
CN108389807A (zh) * 2012-11-26 2018-08-10 D3半导体有限公司 用于垂直半导体器件的精度提高的器件体系结构和方法
JP6070858B2 (ja) * 2013-10-24 2017-02-01 株式会社村田製作所 複合保護回路、複合保護素子および照明用led素子
US9331672B2 (en) * 2014-06-30 2016-05-03 STMicroelectronics (Shenzhen) R&D Co. Ltd Driver circuit with gate clamp supporting stress testing
CN109039328B (zh) * 2014-06-30 2022-08-26 意法半导体研发(深圳)有限公司 支持压力测试的具有栅极钳位的驱动器电路
DE102015205527B3 (de) * 2015-03-26 2016-09-29 Robert Bosch Gmbh Transistor mit integriertem Gate-Source-Widerstand
JP6827740B2 (ja) * 2016-08-31 2021-02-10 キヤノン株式会社 半導体装置、液体吐出ヘッド用基板、液体吐出ヘッド、及び液体吐出装置
JP6729452B2 (ja) * 2017-03-06 2020-07-22 株式会社デンソー 半導体装置
WO2019176774A1 (ja) * 2018-03-12 2019-09-19 ローム株式会社 半導体装置及び半導体装置の識別方法
DE102018211872B4 (de) * 2018-07-17 2020-02-06 HELLA GmbH & Co. KGaA Schaltungsvorrichtung sowie Verfahren zum Betrieb einer Schaltungsvorrichtung

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1681719A2 (en) * 2005-01-13 2006-07-19 Delphi Technologies, Inc. Semiconductor device with split pad design

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US4213066A (en) * 1978-08-11 1980-07-15 General Motors Corporation Solid state switch
JP2550703B2 (ja) 1989-04-28 1996-11-06 日本電装株式会社 半導体装置
JPH0567661A (ja) * 1991-09-10 1993-03-19 Nippondenso Co Ltd 電力用半導体装置
JP3353388B2 (ja) * 1993-06-23 2002-12-03 株式会社デンソー 電力用半導体装置
US5818749A (en) 1993-08-20 1998-10-06 Micron Technology, Inc. Integrated circuit memory device
DE4426307C2 (de) 1994-07-25 2003-05-28 Bosch Gmbh Robert Integrierte Schaltung mit einem Gate Oxid und Testmöglichkeit für dieses bei der Herstellung
EP0869370B1 (en) * 1997-04-01 2003-07-02 STMicroelectronics S.r.l. Means for testing a gate oxide
DE19931082B4 (de) 1999-07-06 2005-02-24 Robert Bosch Gmbh Abgleichbares Halbleiterbauelement
DE10135168A1 (de) * 2001-07-19 2003-02-13 Bosch Gmbh Robert Vorrichtung zum Schutz elektronischer Bauelemente
US20030062594A1 (en) * 2001-10-01 2003-04-03 Chin-Yang Chen Anti-fuse structure with low on-state resistance and low off-state leakage
US6773967B1 (en) 2002-01-04 2004-08-10 Taiwan Semiconductor Manufacturing Company Method to prevent antifuse Si damage using sidewall spacers
DE10227009B4 (de) 2002-06-18 2008-08-28 Robert Bosch Gmbh Detektionseinrichtung für Übertemperaturereignisse eines elektronischen Bauelements und Verfahren zum Detektieren eines Übertemperaturereignisses
US7074707B2 (en) * 2003-09-15 2006-07-11 International Business Machines Corporation Method of fabricating a connection device
JP4375198B2 (ja) * 2004-10-26 2009-12-02 株式会社デンソー 負荷駆動用半導体装置
JP4337711B2 (ja) * 2004-11-17 2009-09-30 株式会社デンソー 半導体素子制御装置
DE102004059643B4 (de) 2004-12-10 2009-11-12 Infineon Technologies Ag Gateansteuerschaltung für einen Leistungstransistor mit isoliertem Gate
DE102005000801A1 (de) 2005-01-05 2006-07-13 Infineon Technologies Ag Vorrichtung, Anordnung und System zum ESD-Schutz
US7608948B2 (en) * 2006-06-20 2009-10-27 Lutron Electronics Co., Inc. Touch screen with sensory feedback
JP2009054061A (ja) * 2007-08-29 2009-03-12 Renesas Technology Corp 半導体装置
US8390326B2 (en) * 2009-05-05 2013-03-05 William Marsh Rice University Method for fabrication of a semiconductor element and structure thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1681719A2 (en) * 2005-01-13 2006-07-19 Delphi Technologies, Inc. Semiconductor device with split pad design

Also Published As

Publication number Publication date
CN102668053A (zh) 2012-09-12
CN102668053B (zh) 2016-03-02
JP2013513245A (ja) 2013-04-18
TW201135897A (en) 2011-10-16
WO2011069737A1 (de) 2011-06-16
US9275915B2 (en) 2016-03-01
EP2510540A1 (de) 2012-10-17
US20120306528A1 (en) 2012-12-06
JP5559348B2 (ja) 2014-07-23
DE102009047670A1 (de) 2011-06-09
DE102009047670B4 (de) 2020-07-30
WO2011069737A4 (de) 2012-02-02

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