TWI563599B - - Google Patents

Info

Publication number
TWI563599B
TWI563599B TW103110210A TW103110210A TWI563599B TW I563599 B TWI563599 B TW I563599B TW 103110210 A TW103110210 A TW 103110210A TW 103110210 A TW103110210 A TW 103110210A TW I563599 B TWI563599 B TW I563599B
Authority
TW
Taiwan
Application number
TW103110210A
Other languages
Chinese (zh)
Other versions
TW201426909A (zh
Inventor
Yusuke Terada
Shigeya Toyokawa
Atsushi Maeda
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of TW201426909A publication Critical patent/TW201426909A/zh
Application granted granted Critical
Publication of TWI563599B publication Critical patent/TWI563599B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
    • H01L21/823456—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823475—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type interconnection or wiring or contact manufacturing related aspects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW103110210A 2007-06-11 2008-05-05 半導體裝置及其製造方法 TW201426909A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007153840 2007-06-11
JP2008071291A JP5280716B2 (ja) 2007-06-11 2008-03-19 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
TW201426909A TW201426909A (zh) 2014-07-01
TWI563599B true TWI563599B (ko) 2016-12-21

Family

ID=40360891

Family Applications (4)

Application Number Title Priority Date Filing Date
TW106142399A TWI668801B (zh) 2007-06-11 2008-05-05 半導體裝置之製造方法
TW103110210A TW201426909A (zh) 2007-06-11 2008-05-05 半導體裝置及其製造方法
TW097116499A TWI435411B (zh) 2007-06-11 2008-05-05 Semiconductor device and manufacturing method thereof
TW105103599A TWI618194B (zh) 2007-06-11 2008-05-05 Semiconductor device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW106142399A TWI668801B (zh) 2007-06-11 2008-05-05 半導體裝置之製造方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW097116499A TWI435411B (zh) 2007-06-11 2008-05-05 Semiconductor device and manufacturing method thereof
TW105103599A TWI618194B (zh) 2007-06-11 2008-05-05 Semiconductor device

Country Status (3)

Country Link
JP (1) JP5280716B2 (ko)
KR (2) KR101465798B1 (ko)
TW (4) TWI668801B (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5968372B2 (ja) * 2014-07-17 2016-08-10 学校法人 龍谷大学 磁場センサー
US9349719B2 (en) * 2014-09-11 2016-05-24 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device
JP6507007B2 (ja) * 2015-03-27 2019-04-24 東レエンジニアリング株式会社 Ｌｅｄモジュールおよびｌｅｄモジュールの製造方法
CN109478514A (zh) * 2016-07-26 2019-03-15 株式会社半导体能源研究所 半导体装置
TWI716865B (zh) * 2019-05-06 2021-01-21 世界先進積體電路股份有限公司 半導體裝置結構
US11476207B2 (en) 2019-10-23 2022-10-18 Vanguard International Semiconductor Corporation Semiconductor device structure comprising source and drain protective circuits against electrostatic discharge (ESD)
US11282790B1 (en) 2020-09-09 2022-03-22 Nanya Technology Corporation Semiconductor device with composite landing pad for metal plug
US11699734B2 (en) 2021-02-10 2023-07-11 Nanya Technology Corporation Semiconductor device with resistance reduction element and method for fabricating the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200411779A (en) * 2001-12-26 2004-07-01 Dongbu Electronics Co Ltd Transistor fabrication method
JP2005045147A (ja) * 2003-07-25 2005-02-17 Seiko Epson Corp 半導体装置およびその製造方法
US20070029676A1 (en) * 2005-08-02 2007-02-08 Norikatsu Takaura Semiconductor device and method for manufacturing the same

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JPH1167904A (ja) * 1997-08-15 1999-03-09 Hitachi Ltd 半導体集積回路装置の製造方法
JP3472727B2 (ja) * 1999-08-13 2003-12-02 Ｎｅｃエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP2001244436A (ja) * 2000-03-01 2001-09-07 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2002170888A (ja) * 2000-11-30 2002-06-14 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2004288763A (ja) * 2003-03-20 2004-10-14 Seiko Epson Corp 半導体装置の製造方法及び半導体装置
TWI361490B (en) * 2003-09-05 2012-04-01 Renesas Electronics Corp A semiconductor device and a method of manufacturing the same
JP2004096119A (ja) * 2003-09-12 2004-03-25 Hitachi Ltd 半導体装置およびその製造方法
JP2005093887A (ja) * 2003-09-19 2005-04-07 Fujitsu Ltd 半導体装置及びその製造方法
JP4610486B2 (ja) * 2003-12-26 2011-01-12 富士通セミコンダクター株式会社 半導体装置、半導体装置の製造方法
JP4814498B2 (ja) * 2004-06-18 2011-11-16 シャープ株式会社 半導体基板の製造方法
JP4881552B2 (ja) * 2004-09-09 2012-02-22 ルネサスエレクトロニクス株式会社 半導体装置
KR100580581B1 (ko) * 2004-11-03 2006-05-16 삼성전자주식회사 반도체 장치의 제조 방법
JP4250146B2 (ja) * 2005-03-30 2009-04-08 富士通株式会社 半導体装置の製造方法
KR100688552B1 (ko) * 2005-06-08 2007-03-02 삼성전자주식회사 두꺼운 에지 게이트절연막 패턴을 갖는 모스 전계효과트랜지스터 및 그 제조방법
US7867867B2 (en) * 2005-11-07 2011-01-11 Samsung Electronics Co., Ltd. Methods of manufacturing semiconductor devices
JP2007141934A (ja) * 2005-11-15 2007-06-07 Matsushita Electric Ind Co Ltd 半導体装置とその製造方法
JP5042492B2 (ja) * 2005-12-19 2012-10-03 ルネサスエレクトロニクス株式会社 半導体装置
JP4648286B2 (ja) * 2006-11-06 2011-03-09 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200411779A (en) * 2001-12-26 2004-07-01 Dongbu Electronics Co Ltd Transistor fabrication method
JP2005045147A (ja) * 2003-07-25 2005-02-17 Seiko Epson Corp 半導体装置およびその製造方法
US20070029676A1 (en) * 2005-08-02 2007-02-08 Norikatsu Takaura Semiconductor device and method for manufacturing the same

Also Published As

Publication number Publication date
TWI435411B (zh) 2014-04-21
KR20130040996A (ko) 2013-04-24
KR20080108902A (ko) 2008-12-16
TW201618235A (zh) 2016-05-16
KR101540509B1 (ko) 2015-07-31
KR101465798B1 (ko) 2014-11-26
TWI618194B (zh) 2018-03-11
JP2009021546A (ja) 2009-01-29
TWI668801B (zh) 2019-08-11
TW201818506A (zh) 2018-05-16
JP5280716B2 (ja) 2013-09-04
TW201426909A (zh) 2014-07-01
TW200910521A (en) 2009-03-01

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